Datasheet TEA1064B Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TEA1064B

Low voltage versatile telephone
transmission circuit with dialler
interface and transmit level
dynamic limiting

Product specification
File under Integrated Circuits, IC03A

March 1994

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting

FEATURES

• Low DC line voltage; operates down to 1.8 V (excluding
polarity guard)

• Voltage regulator with low voltage drop and adjustable
static resistance

• DC line voltage adjustment facility

• Provides a supply for external circuits

• Dynamic limiting (speech-controlled) in transmit

direction prevents distortion of line signal and sidetone

• Symmetrical high-impedance inputs (64 kΩ) for
dynamic, magnetic or piezo-electric microphones

• Asymmetrical high-impedance input (32 kΩ) for electret
microphones

• DTMF signal input

• Confidence tone in the earpiece during DTMF dialling

• Mute input for disabling speech during pulse or DTMF

dialling

• Power-down input for improved performance during
pulse dial or register recall (flash)

• Receiving amplifier for dynamic, magnetic or
piezo-electric earpieces

• Large amplification setting ranges on microphone and
earpiece amplifiers

• Line loss compensation (line current dependent) for
microphone and earpiece amplifiers (not used for DTMF
amplifier)

• Gain control curve adaptable to exchange supply

• Automatic disabling of the DTMF amplifier in

extremely-low voltage conditions

• Microphone MUTE function available with switch

• MUTE, POWER-DOWN and DTMF input reference (pin

) can be connected either to V

V

EE2

GENERAL DESCRIPTION

The TEA1064B is a bipolar integrated circuit that performs
all the speech and line interface functions required in fully
electronic telephone sets. It performs electronic switching
between dialling and speech. The IC operates at line
voltages down to 1.8 V DC (with reduced performance) to
facilitate the use of more telephone sets connected in
parallel. The transmit signal on the line is dynamically
limited (speech-controlled) to prevent distortion at high
transmit levels of both the sending signal and the sidetone.

TEA1064B

or SLPE.

EE1

ORDERING INFORMATION

EXTENDED TYPE

NUMBER

TEA1064B 20 DIL plastic SOT146
TEA1064BT 20 mini-pack plastic SO20; SOT163A

Notes

1. SOT146-1; 1998 Jun 18.

2. SOT163-1; 1998 Jun 18.

PINS PIN POSITION MATERIAL CODE

PACKAGE

(1)

(2)

March 1994 2

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit

TEA1064B

with dialler interface and transmit level dynamic limiting

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

line

I

CC

G

v

G

v

V

exch

R

exch

V

LN(p-p)

V

p

V

LN

T

amb

line current operating range

normal operation note 1 11 − 140 mA
with reduced performance 2 − 11 mA

internal supply current VCC = 2.8 V

power-down input LOW − 1.3 1.6 mA
power-down input HIGH − 60 82 µA

voltage gain range

microphone amplifier 44 − 52 dB
receiving amplifier 20 − 45 dB

line loss compensation ranges

gain control 5.7 6.1 6.5 dB
exchange supply voltage 36 − 60 V
exchange feeding bridge resistance 400 − 1000 Ω

maximum output voltage swing on LN
(peak-to-peak value)

supply for peripherals I

DC line voltage I

R16 = 392 Ω;
I

= 15 mA

line

I

= 1.4 mA 3.55 3.80 4.05 V

p

= 2.7 mA 3.25 3.50 3.75 V

I

p

= 15 mA

line

= 1.4 mA 2.5 2.7 − V

I

p

I

= 2.7 mA;

p

R

REG-SLPE

= 15 mA

line

without R
R

REG-SLPE

= 20 kΩ

REG-SLPE

= 20 kΩ 4.05 4.4 4.75 V

2.9 3.1 − V

3.25 3.5 3.75 V

operating ambient temperature range −25 −+75 °C

Note

1. For the TEA1064BT the maximum line current depends on the heat dissipating qualities of the mounted device.

March 1994 3

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting

13

9
8

12

14

15

V

CC

TEA1064B

dB

SUPPLY AND
REFERENCE

−
+

+

−

+

−
+

−

handbook, full pagewidth

IR

MIC+
MIC−

DTMF

MUTE

PD

TEA1064B

LN

116

6

GAR

5

+

−

QR+

4

QR−

2

GAS1

3

GAS2

V

EE1VEE2

AGC

CIRCUIT

CURRENT

REFERENCE

171911

18 10 7 20

REG AGC STAB

Fig.1 Block diagram.

LOW

VOLTAGE

CIRCUIT

START

CIRCUIT

DYNAMIC

LIMITER

DLS/MMUTE

SLPE

MBA442

March 1994 4

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting

PINNING

SYMBOL PIN DESCRIPTION

LN 1 positive line terminal
GAS1 2 gain adjustment; transmitting amplifier
GAS2 3 gain adjustment; transmitting amplifier
QR− 4 inverting output; receiving amplifier
QR+ 5 non-inverting output; receiving amplifier
GAR 6 gain adjustment; receiving amplifier
DLS/

MMUTE 7 decoupling for transmit amplifier dynamic and microphone MUTE input
MIC− 8 inverting microphone input
MIC+ 9 non-inverting microphone input
STAB 10 current stabilizer
V

EE1

DTMF 12 dual-tone multi-frequency input
IR 13 receiving amplifier input
MUTE 14 mute input
PD 15 power-down input
V

CC

REG 17 voltage regulator decoupling
AGC 18 automatic gain control input
V

EE2

SLPE 20 slope adjustment for DC curve/reference for peripheral circuits

11 negative line terminal

16 internal supply decoupling

19 reference for POWER-DOWN (PD), MUTE and DTMF

TEA1064B

handbook, halfpage

DLS/MMUTE

LN
GAS1
GAS2

QR−
QR+

GAR

MIC−
MIC+

STAB

1
2
3
4
5

TEA1064B

6
7
8
9

10

Fig.2 Pin configuration.

March 1994 5

MBA433

20

SLPE
V

19

EE2

18

AGC

17

REG
V

16

CC

15

PD
MUTE

14

IR

13

DTMF

12

V

11

EE1

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting

FUNCTIONAL DESCRIPTION

, V

Supplies V

CC

, LN, SLPE, REG and STAB (Figs 3

EE2

and 5)

Power for the TEA1064B and its peripheral circuits is
usually obtained from the telephone line. The IC develops
its own supply voltage at V

and regulates its voltage

CC

drop. The internal supply requires a decoupling capacitor
between VCC and V
set by a 3.6 kΩ resistor between STAB and V

. The internal current stabilizer is

EE1

EE1

.

The DC current flowing into the set is determined by the
exchange supply voltage V
resistance R

, the subscriber line DC resistance R

exch

, the feeding bridge

exch

line

and the DC voltage (including polarity guard) on the
subscriber set (see Fig.3).

The internal voltage regulator generates a
temperature-compensated reference voltage that is
available between LN and SLPE (V

ref

= V

LN-SLPE

= 3.23 V
typ.). This internal voltage regulator requires decoupling
by a capacitor between REG and V

EE1

(C3).

The configuration shown in Fig.3, gives a stabilized
voltage across pins LN and SLPE which, applied via the
low-pass filter R16, C15, provides a supply to the
peripherals that is independant of the line current and
depends only on the peripheral supply current.

The value of R16 and the level of the DC voltage V
determine the supply capabilities. In the basic application
R16 = 392 Ω and C15 = 220 µF. The worst-case
peripheral supply current as a function of supply voltage is
shown in Fig.4.

To increase the supply capabilities, the value of R16 can
be decreased or the DC voltage V
by using R

VA(REG-SLPE)

Note

The TEA1064B application is the same as is used for
TEA1060/TEA1061, TEA1067 and TEA1068 integrated
circuits.

TEA1064B

LN-SLPE

can be increased

LN-SLPE

.

I

CC

Ip + 0.25 mA

V

CC

16

0.25 mA

11

19

V

V

EE1

EE2

handbook, full pagewidth

R

line

R

exch

V

exch

The voltage V
Resistor R16 together with the line current determine the supply capabilities and the maximum output swing on
the line (no loop damping is necessary).
The line voltage V

LN-SLPE

LN=Vref

is fixed to V

+ ({I

= 3.323 ±0.25 V.

ref

− 1.55 mA}× R9).

line

I

line

I

SLPE

TEA1064B

DC
AC

17
REG

C3 R5

+ 0.25 mA

10
STAB20SLPE

R1

LN
1

R9

Fig.3 Supply arrangement with reference to SLPE.

R16C1

C15

peripheral

circuits

MBA435

I

p

V

p

March 1994 6

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting

MBA436

Vp (V)

handbook, halfpage

(mA)

I

= 15 mA; R16 = 392 Ω; valid for MUTE = 0 and 1.

line

Line current has very little influence.

5

I

p

4

3

2

1

0

2345

R

VA(REG-SLPE)

R

VA(REG-SLPE)

without

= 20 kΩ

TEA1064B

Fig.4 Maximum supply current with respect to Fig.3 for peripherals (Ip) as a function of the peripheral supply

voltage (Vp).

I

SLPE

I

line

+ 0.25 mA

STAB

R1

I

CC

LN
116

20

SLPE

V

CC

0.25 mA

11

EE1

V

EE2

C1

peripheral

circuits

MBA432

I

p

handbook, full pagewidth

V

R

exch

exch

R

line

TEA1064B

DC
AC

17 10 19
REG V

C3 R5 R9

Fig.5 Supply arrangement with reference to V

March 1994 7

EE1

.

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting

VCC). MUTE, PD and DTMF are then referenced to V

= 20 kΩ

3

VCC (V)

MBA434

2.4

handbook, halfpage

I

p

(mA)

1.6

0.8

0

(a) Ip= 1.94 mA

= 1.54 mA

(b) I

p

= 0.54 mA

(a′) I

p

= 0.16 mA

(b′)I

p

=15mA

I

line

R1 = 620 Ω and R9 = 20 Ω
Curve (a) and (a′) are valid when the receiving
amplifier is not driven or when MUTE = HIGH.
Curve (b) and (b′) are valid when the receiving
amplifier is driven and when MUTE = LOW.
V

o(RMS)

(a)

(b)

R

VA(REG-SLPE)

(a')

(b')

012 4

= 150 mV, RT= 150 Ω.

R
VA(REG-SLPE)

without

Fig.6 Maximum current Ipwith respect to Fig.5

available from Vccfor peripheral circuitry
with VCC> 2.2 V.

The maximum AC output swing on the line at low currents
is influenced by R16 (limited by current) and the maximum
output swing on the line at high currents is influenced by
DC voltage V

(limited by voltage). In both these

LN-SLPE

situations, the internal dynamic limiter in the sending
channel prevents distortion when the microphone is
overdriven. The maximum AC output swing on LN is
shown in Fig.7; practical values for R16 are from 200 Ω to
600 Ω and this influences both maximum output swing at
low line currents and the supply capabilities.

When the SLPE pin is the reference for peripheral circuits,
inputs MUTE, PD and DTMF must be referenced to SLPE.
This is achieved by connecting pin V

to pin SLPE; V

EE2

EE2

being the reference of MUTE, PD and DTMF input stages.
Active microphones can be supplied between VCC and

V

as shown in Fig.5. Low power circuits that provide

EE1

MUTE, PD and DTMF inputs to the TEA1064B can also be
powered from VCC (see Fig.6 for the supply capability of

and the pin V
If the line current I

converter shunts the excess current to SLPE via LN;
where ICC≈ 1.3 mA, the value required by the IC for
normal operation.

The DC line voltage on LN is:

• VLN = V

• VLN = V

in which:

• V

= 3.23 V ± 0.25 V is the internal reference voltage

ref

between LN and SLPE; its value can be adjusted by
external resistor RVA.

• R9 = external resistor between SLPE and V
basic operation).

With R9 = 20 Ω, this results in:

• VLN = 3.3 ± 0.25 V at I

• VLN = 4.1 ± 0.3 V at I

• VLN = 4.4 ± 0.35 V at I

R

VA(REG- SLPE)

The preferred value for R9 is 20 Ω. Changing R9
influences microphone gain, DTMF gain, the gain control
characteristics, sidetone and the DC characteristics
(especially the low voltage characteristics).

In normal conditions, I
static behaviour is equivalent to a voltage regulator diode
with an internal resistance of R9. In the audio frequency
range the dynamic impedance is determined mainly by R1.
The equivalent impedance of the circuit in audio frequency
range is shown in Fig.8.

The internal reference voltage V
by external resistor R
REG and SLPE. The voltage V
function of R
voltage influences the output swing of both sending and
receiving amplifiers.

At line currents below 8 mA (typ.), the DC voltage dropped
across the circuit is adjusted to a lower level automatically
(approximately 1.8 V at 2 mA). This gives the possibility of
operating more telephone sets in parallel with DC line
voltages (excluding polarity guard) down to an absolute
minimum of 1.8 V. At line currents below 8 mA (typ.), the
circuit has limited sending and receiving levels.

must therefore be connected to V

EE2

LN-SLPE

+ ({I

ref

line

VA(REG-SLPE)

TEA1064B

exceeds ICC+ 0.25 mA, the voltage

line

+ (I

x R9)

SLPE

− ICC− 0.25 x 10−3 A} x R9)

= 15 mA

line

= 15 mA, R

line

line

= 15mA,

VA(REG-SLPE)

= 20 kΩ

>> (ICC+ 0.25 mA) and the

SLPE

can be increased

LN-SLPE

VA(REG-SLPE)

connected between

is shown as a

LN-SLPE

in Fig.9. Changing the reference

EE1

EE1

.

EE1

(20 Ω in

= 33 kΩ

March 1994 8

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting

(mA)

MBA437

handbook, halfpage

L

V

R9
20 Ω

Leq=C3×R9 × R
Rp=15kΩ

p

Fig.8 Equivalent impedance between LN and

VEE.

handbook, halfpage

6

V

LN(p-p)

(V)

4

Ip =

2

0

10

R16 = 392 Ω; Ipwith respect to Fig.3.

0 mA

1.4 mA

2.7 mA

20 30

I

line

Fig.7 Typical AC output swing at total harmonic

distortion (THD) = 2% on the line as a
function of line current with peripheral
supply current as a parameter.

TEA1064B

LN

eq

ref

R

p

REG

C3

4.7 µF

R1

V

C1

MBA438

CC

V

EE1

handbook, full pagewidth

VLN=V

LN-SLPE

+ ({I

− 1.55 × 10−3A} × R9).

line

Fig.9 Internal reference voltage V

and 140 mA.

7.8

V

ref

(V)

6.6

5.4

4.2

3.0
08040 120

LN-SLPE

as a function of resistor R

RVVA (REG-SLPE) (kΩ)

MBA467

VA(REG-SLPE)

with R

VA

infinite

for line currents between 11 mA

March 1994 9

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting

Microphone inputs MIC+ and MIC− and gain pins
GAS1 and GAS2

The TEA1064B has symmetrical microphone inputs, its
input impedance is 64 kΩ (2 x 32 kΩ) and its voltage
amplification is typically 52 dB with R7 = 68 kΩ. Either
dynamic, magnetic or piezo-electric microphones can be
used, or an electret microphone with a built-in FET buffer.
Arrangements for the microphone types are shown in
Fig.10.

handbook, full pagewidth

MIC+

9

(1)

MIC−

8

The gain of the microphone amplifier is proportional to
external resistor R7 connected between GAS1 and GAS2
and with this it can be adjusted between 44 dB and
52 dB to suit the sensitivity of the transducer.

An external 100 pF capacitor (C6) is required between
GAS1 and SLPE to ensure stability. A larger value of C6
may be chosen to obtain a first-order low-pass filter with a
cut-off frequency corresponding to the time constant
R7 x C6.

V

CC

MIC−

MIC+

16

8

9

11

V

EE1

TEA1064B

MIC+

9

MIC−

8

MBA439

(a) (b)

Resistor (1) may be connected to reduce the terminating impedance, or for sensitive types a resistive attenuator
can be used to prevent overloading the microphone inputs.

(c)

Fig.10 Microphone arrangements (a) magnetic or dynamic microphone (b) electret microphone (c) piezo-electric

microphone currents.

March 1994 10

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting

Dynamic limiter (microphone) pin DLS/MMUTE

A low level at the DLS/MMUTE pin inhibits the microphone
inputs MIC+ and MIC− but has no influence on the
receiving and DTMF amplifiers.

Removing the low level at the DLS/MMUTE pin provides
the normal function of the microphone amplifier after a
short time determined by the capacitor connected to
DLS/MMUTE pin. The microphone mute function can be
realised by a simple switch as shown in Fig.11.

To prevent distortion of the transmitted signal, the gain of
the sending amplifier is reduced rapidly when peaks of the
signal on the line exceed an internally-determined
threshold. The time in which gain reduction is effected
(attack time) is very short. The circuit stays in the
gain-reduced condition until the peaks of the sending
signal remain below the threshold level. The sending gain
then returns to normal after a a time determined by the
capacitor connected to DLS/MMUTE (release time).

The internal threshold adapts automatically to the DC
voltage setting of the circuit (V

). This means that

LN-SLPE

the maximum output swing on the line will be higher if the
DC voltage dropped across the circuit is increased.
Fig.12 shows the maximum possible output swing on the
line as a function of the DC voltage drop (V
I

− Ip as a parameter.

line

LN-SLPE

) with

The internal threshold level is lowered automatically if the
DC current in the transmit output stage is insufficient. This
prevents distortion of the sending signal in applications
using parallel-connected telephones or telephones
operating over long lines, for example.

Dynamic limiting also considerably improves sidetone
performance in over-drive conditions (less distortion;
limited sidetone level).

handbook, halfpage

10

V

LN(p-p)

(V)

8

6

4

2

R17

3.3 kΩ

Fig.11 Microphone-mute function.

DLS/MMUTE

V

EE1

TEA1064B

7

11

MBA440

MBA464

I

line-Ip

25
23
21

19
17

15
13
11

(mA)

March 1994 11

0

3 3.5 4 4.5 5

R16 = 392 Ω.

VLN-V

SLPE

(V)

5.5

Fig.12 Typical output swing on line as a function of

the DC voltage drop V
I

− Ipas a parameter.

line

LN-SLPE

with

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting

Receiving amplifier IR, QR+, QR− and GAR

The receiving amplifier has one input IR and two
complimentary outputs, QR+ (non-inverting) and QR−
(inverting). These outputs may be used for single-ended or
differential drive, depending on the type and sensitivity of
the earpiece used (see Fig.13). Gain from IR to QR+ is
typically 31 dB with R4 = 100 kΩ, sufficient for

handbook, full pagewidth

11

QR+

5

QR−

4

V

EE

(a) (b) (c) (d)

QR+

5

QR−

4

low-impedance magnetic or dynamic earpieces which are
suitable for single-ended drive. By using both outputs
(differential drive) the gain is increased by 6 dB.
Differential drive can be used when the earpiece
impedance exceeds 450 Ω as with high-impedance
dynamic, magnetic or piezo-electric earpieces.

(1)

QR+

5

QR−

4

TEA1064B

QR+

5

QR−

4

(2)

MBA441

Resistor (1) may be connected to prevent distortion (inductive load).
Resistor (2) is required to increase the phase margin (stability with capacitive load).

Fig.13 Alternative receiver arrangements (a) dynamic earpiece with an impedance less than 450 Ω

(b) dynamic earpiece with an impedance more than 450 Ω
(c) magnetic earpiece with an impedance more than 450 Ω
(d) piezo-electric earpiece.

March 1994 12

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting

The output voltage of the receiving amplifier is specified for
continuous-wave drive. Fig.14 shows the maximum output
swing of the receiving amplifier as a function of the DC
voltage drop (VLN). The maximum output voltage will be
higher under speech conditions, where the ratio of the
peak to the RMS value is higher.

The gain of the receiving amplifier can be adjusted to suit
the sensitivity of the transducer used. The adjustment
range is between 20 dB and 39 dB with single-ended drive
and between 26 dB and 45 dB with differential drive. The
gain is proportional to the external resistor R4 connected
between GAR and QR+. The overall gain between LN and
QR+ can be found by subtracting the attenuation of the
anti-sidetone network (32 dB) from the amplifier gain.

Two external capacitors (C4 = 100 pF and C7 = 10 x C4 =
1 nF) ensure stability. A larger value may be chosen to
obtain a first-order low-pass filter. The cut-off frequency
corresponds with time constant R4 x C4. The relationship
C7 = 10 x C4 must be maintained.

1.5

handbook, halfpage

V

QR(rms)

(V)

1.0

0.5

0

34 6

Valid for both options; THD = 2%, I
Curve (1) is for a differential load of 47 nf (series
resistance = 100 Ω; f = 3400 Hz.
Curve (2) is for a differential load of 450 Ω;
f = 1 kHz.
Curve (3) is for a single-ended load of 150 Ω;
f = 1 kHz.

(1)

(2)

(3)

=15mA.

line

TEA1064B

MLB031

5

VLN (V)

Fig.14 Typical output swing of the receiving

amplifier as a function of DC voltage drop
VLNwith the load at the receiver output as
parameter.

March 1994 13

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting

Automatic gain control input AGC

Automatic compensation of line loss is obtained by
connecting a resistor (R6) between AGC and V

EE1

.

This automatic gain control varies the gain of the
microphone amplifier and receiving amplifier in
accordance with the DC line current. The control range is

6.1 dB; this corresponds to a 5 km line of 0.5 dB diameter
copper twisted-pair cable (DC resistance = 176 Ω/km,
average attenuation = 1.2 dB/km). The DTMF gain is not
affected by this feature.

handbook, full pagewidth

0

∆A

vd

(dB)

−2

The value of R6 must be chosen with reference to the
exchange supply voltage and its feeding bridge resistance
(see Fig.15 and Table 1). Different values of R6 give the
same line current ratios at the start and the end of the
control range. If automatic line-loss compensation is not
required the AGC pin can be left open-circuit, the
amplifiers then provide their maximum gain.

R6 =

∞

TEA1064B

MLB030

−4

R6 = 66.5 kΩ

−6

93.1 kΩ

118 kΩ

I

line

(mA)

140120100806040200

Fig.15 Variation of gain as a function of line current with R6 as a parameter; R9 = 20 Ω.

Table 1 V alues of R6 giving optimum line-loss compensation at various values of exchange supply voltage (V

exchange feeding bridge resistance (R

); R9 = 20 Ω

exch

(Ω)

R

exch

400 600 800 1000

R6 (kΩ)

35 84.5 66.5 x x

V

exch

(V)

48 118 93.1 77.8 66.5
60 x x 97.6 84.5

exch

) and

March 1994 14

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting

V

input

EE2

V

is the reference for MUTE, POWER-DOWN and

EE2

DTMF inputs. These signals are referenced to V
generated by peripherals powered between VCC and V

EE1

when

EE1

but they can also be referenced to SLPE when peripherals
are powered as shown in Fig.3. In the first instance
(reference to V
the second instance (reference to SLPE), V

EE1

), V

has to be connected to V

EE2

has to be

EE2

EE1

. In

connected to SLPE.

MUTE input (see notes 1 and 2)

MUTE = HIGH enables the DTMF input and inhibits the
microphone and receiving amplifier inputs.

MUTE = LOW or open-circuit disables the DTMF input and
enables the microphone and receiving amplifier inputs.

Switching MUTE gives negligible clicks at the telephone
outputs and on the line.

Dual-tone multi-frequency input DTMF (see note 1)

When the DTMF input is enabled, dialling tones may be
sent on the line. The voltage gain between DTMF-V
and LN-V

is typically 26.5 dB less than the gain of the

EE1

EE2

microphone amplifier and varies with R7 in the same way
as the gain of the microphone amplifier. This means that
the tone level at the DTMF input has to be adjusted after
setting the gain of the microphone amplifier.

With R7 = 68 kΩ the gain is typically 25.5 dB.
The signalling tones can be heard in the earpiece at a low

level (confidence tone).

Power-down input PD (see notes 1. and 2.)
During pulse dialling or register recall (timed loop break)

the telephone line is interrupted; as a consequence it
provides no supply for the transmission circuit connected
to V

or for the peripherals between VLN and SLPE.

CC

These supply gaps are bridged by the charges in the
capacitors C1 and C15. The requirements on these
capacitors are eased by an applied HIGH level to the PD
input during the time of the loop break. This reduces the
internal supply current I

from 1.3 mA (typ.) to 60 µA

CC1

(typ.) and switches off the voltage regulator to prevent
discharge via LN to V

CC2

.

A HIGH level at PD also internally disconnects the
capacitor at REG so that the voltage stabilizer has no
switch-on delay after line interruptions. This minimizes the
contribution of the IC to the current waveform during pulse

,

dialling or register recall.
When the power-down facility is not required, the PD pin

can be left open-circuit or connected to V

Sidetone suppression

Suppression of the transmitted signal in the earpiece is
obtained by the anti-sidetone network comprising R1//Z
R2, R3, R8, R9 and Z
compensation is obtained when the following conditions
are fulfilled:

(a) R9 x R2 = R1 x (R3 + {R8//Z
(b) (Z

bal

/{Z

bal

+ R8}) = (Z

If fixed values are chosen for R1, R2, R3 and R9, then
condition (a) is always fulfilled provided  R8//Z

To obtain optimum sidetone suppression, condition (b) has
to be fulfilled, resulting in:

Z

= (R8/R1) x Z

bal

Where k is a scale factor; k = (R8/R1).
The scale factor k (value of R8) is chosen to meet the

following criteria:

• compatibility with a standard capacitor from the E6 or
E12 range for Z

• Z

//R8 << R3 to fulfil condition (a) and thus ensure

bal

correct anti-sidetone bridge operation

• Z

In practise Z

+ R8 >> R9 to avoid influencing the transmit gain

bal

varies considerably with the line length and

line

line type. Therefore the value chosen for Z
an average line length giving satisfactory sidetone
suppression with short and long lines. The suppression
also depends on the accuracy of the match between Z
and the impedance of the average line.

(see Fig.16). Maximum

bal

bal

/{Z

line

line

= k x Z

line

bal

line

TEA1064B

EE2

})

+ R1})

bal

.

line

 << R3

bal

should be for

bal

,

March 1994 15

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting

EXAMPLE
The line impedance for which optimum suppression is to

be obtained can be represented by 210 Ω+
(1265 Ω //140 nF). This represents a 5 km line of 0.5 mm
diameter copper twisted-pair cable matched with 600 Ω
(176 Ω/km; 38 nF/km).

With k = 0.64 this results in : R8 = 390 Ω;
Z

= 130 Ω+ (820 Ω//220 nF).

bal

The anti-sidetone network for the TEA1060 family shown
in Fig.16 attenuates the signal received from the line by
32 dB before it enters the receiving amplifier. The
attenuation is almost constant over the whole
audio-frequency range.

handbook, full pagewidth

LN

Alternatively a conventional Wheatstone bridge can be
used as an anti-sidetone circuit (see Fig.17). Both bridge
types can be used with either resistive or complex set
impedances. (More information on the balancing of
anti-sidetone bridges can be obtained in our publication

“Versatile speech transmission ICs for electronic
telephone sets”

, order number 9398 341 10011).

Notes

1. The reference level used for the MUTE, DTMF and PD

inputs is V

EE2

2. A LOW level for any of these pins is defined by

connection to V
voltage greater than V
VCC+ 0.4 V.

TEA1064B

.

, a HIGH level is defined as a

EE2

+ 1.5 V and smaller than

EE2

handbook, full pagewidth

Z

line

V

EE2

R1

R9

SLPE

R2

i

m

R3

R8

IR

R

t

Z

bal

MBA465

Fig.16 Equivalent circuit of TEA1060 family anti-sidetone bridge.

LN

Z

line

V

EE2

R1

R9

Z

bal

i

m

R8

IR

R

t

R

A

SLPE

Fig.17 Equivalent circuit of an anti-sidetone network in the Wheatstone bridge configuration.

March 1994 16

MBA466

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit

TEA1064B

with dialler interface and transmit level dynamic limiting

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V

V

I

V
P

T
T
T

LN
LN

LN

LN

i
tot

amb
stg
j

positive line voltage continuous − 12 V
repetitive line voltage during

− 13.2 V

switch-on line interruption
repetitive peak line voltage one 1 ms

pulse per 5 s

R9 = 20 Ω;
R10 = 13 Ω;

− 28 V

see Fig.22

line current R9 = 20 Ω

TEA1064B note 1 − 140 mA
TEA1064BT note 1 − 140 mA

input voltage on pins other than LN V

−0.7 VCC+0.7 V

EE1

total power dissipation R9 = 20 Ω; note 2

TEA1064B − 717 mW

TEA1064BT − 555 mW
operating ambient temperature −25 +75 °C
storage temperature −40 +125 °C
junction temperature −+125 °C

Notes

1. Mostly dependent on the maximum required T

and on the voltage between LN and SLPE. See Figs 18 and 19 to

amb

determine the current as a function of the required voltage and the temperature.

2. Calculated for the maximum ambient temperature specified T

= 75 °C and a maximum junction temperature of

amb

125 °C.

THERMAL RESISTANCE

SYMBOL PARAMETER THERMAL RESISTANCE

R

th j-a

from junction to ambient in free air

SOT146 70 K/W
SOT163A (note 1) 90 K/W

Note

1. Mounted on glass epoxy board 41 × 19 × 1.5 mm.

March 1994 17

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting

(1)

SLPE

MLB032

(2)

(3)

(4)

(V)

150

handbook, halfpage

I

LN

(mA)

130

110

90

70

50

30

212

46810

160

handbook, halfpage

I

LN

(mA)

140

120

100

80

60

40

212

46810

VLN-V

TEA1064B

MSA546

(1)

(2)

(3)

(4)

VLN-V

SLPE

(V)

(1) T
(2) T
(3) T
(4) T

amb
amb
amb
amb

=45°C; P
=55°C; P
=65°C; P
=75°C; P

= 1143 mW.

tot

= 1000 mW.

tot

= 857 mW.

tot

= 714 mW.

tot

Fig.18 TEA1064B safe operating area.

(1) T
(2) T
(3) T
(4) T

=45°C; P

amb

=55°C; P

amb

=65°C; P

amb

=75°C; P

amb

= 888 mW.

tot

= 777 mW.

tot

= 666 mW.

tot

= 555 mW.

tot

Fig.19 TEA1064BT safe operating area.

March 1994 18

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit

TEA1064B

with dialler interface and transmit level dynamic limiting

CHARACTERISTICS

= 11 to 140 mA; V

I

line

connected to SLPE; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies LN and VCC (pins 1 and 16)

V

LN

DC line voltage: voltage drop
between LN and V

/∆T variation with temperature I

∆V

LN

V

LN

voltage drop over circuit with R
connected between REG and SLPE

I

CC

V

CC

internal supply current into pin 16 VCC = 2.8 V

supply voltage available for
peripheral circuitry
V

EE2

V

p

supply voltage available for
peripheral circuitry

Microphone inputs MIC− and MIC+ (pins 8 and 9)

Z

i

input impedance

differential 51 64 77 kΩ

single-ended 25.5 32.0 38.5 kΩ
CMRR common mode rejection ratio − 82 − dB
G

v

f variation of Gv with frequency

∆G

v

voltage gain (see Fig.20) I

referred to 0.8 kHz

= 0 V; f = 800 Hz; T

EE1

connected to V

EE1

EE1

= 25 °C; RL = 600 Ω; tested in the circuits of Fig.20 or Fig.21; V

amb

MIC−, MIC+ inputs
open-circuit;

VA

without R
I

line

I

line

I

line

I

line

I

line

I

line

I

line
line

R

VA

R

VA

VA

= 2 mA − 1.8 − V
= 4 mA − 2.2 − V
= 7 mA − 3.2 − V
= 11 mA − 3.4 − V
= 15 mA 3.25 3.5 3.75 V
= 100 mA − 5.25 6.05 V
= 140 mA − 6.1 7.0 V
= 15 mA −3 −1 +1 mV/K

= 33 kΩ 3.8 4.1 4.4 V
= 20 kΩ 4.05 4.4 4.75 V

PD = LOW − 1.3 1.6 mA
PD = HIGH − 60 82 µA
I

= 15 mA;

line

MUTE = HIGH;
see Fig.5

I

= 0.54 mA 2.2 2.4 − V

p

I

= 0 mA 2.5 2.7 − V

p

I

= 15 mA

line

= 1.4 mA 2.5 2.7 − V

I

p

= 2.7 mA;

I

p

R

REG-SLPE

= 15 mA;

line

= 20 kΩ

2.9 3.1 − V

51 52 53 dB

R7 = 68 kΩ
f = 300 and 3400 Hz −0.5 ±0.1 +0.5 dB

EE2

March 1994 19

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit

TEA1064B

with dialler interface and transmit level dynamic limiting

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

∆GvT variation of Gv with temperature

referred to 25 °C

DTMF input (pin 12)

Z

i

G

v

∆G

f variation of Gv with frequency

v

input impedance 16.8 20.7 24.6 kΩ
voltage gain (see Fig.20) I

referred to 0.8 kHz

∆G

T variation of Gv with temperature

v

referred to 25 °C

Gain adjustment inputs GAS1 and GAS2 (pins 2 and 3)

∆G

v

transmitting amplifier gain
adjustment range

without R6;
I

= 50 mA;

line

T

= −25 to +75 °C

amb

= 15 mA;

line

−±0.2 − dB

24.5 25.5 26.5 dB

R7 = 68 kΩ

f = 300 and 3400 Hz −0.5 ±0.01 +0.5 dB
f = 697 and 1633 Hz −0.2 ±0.05 +0.2 dB
I

= 50 mA;

line

T

= −25 to +75 °C

amb

−±0.2 0.5 dB

−8 −+0dB

Sending amplifier output LN (pin 1)

D

YNAMIC LIMITER

V

LN(p-p)

output voltage swing
(peak-to-peak value)

THD total harmonic distortion

V

LN(p-p)

output voltage swing
(peak-to-peak value)

dynamic behaviour of limiter C16 = 470 nF

t

att

attack time V

jumps from

mic

2 mV to 40 mV

t

rel

release time V

jumps from

mic

40 mV to 2 mV

V

no(RMS)

noise output voltage
(RMS value)

I

= 15 mA;

line

3.4 3.8 4.2 V
R7 = 68 kΩ;
V

= 3.6 mV

i(RMS)

Vi = 3.6 mV +10 dB − 1.5 − %

= 3.6 mV +15 dB − 2.8 − %

V

i

Vi = 3.6 mV +10 dB

= 1.4 mA 3.55 3.8 4.05 V

I

p

I

= 2.7 mA 3.25 3.5 3.75 V

p

I

= 0 mA; I

p

I

= 0 mA; I

p

= 7 mA − 1.8 − V

line

= 4 mA − 0.9 − V

line

− 1.5 5.0 ms

50 150 − ms

I

= 15 mA;

line

−−72 − dBmp
R7 = 68 kΩ;
200 Ω between
MIC− and MIC+;
psophometrically
weighted (P53 curve)

March 1994 20

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit

TEA1064B

with dialler interface and transmit level dynamic limiting

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Receiving amplifier input IR (pin 13)

Z

i

Receiving amplifier outputs QR− and QR+ (pins 4 and 5)

Z

o

G

v

f variation of Gv with frequency

∆G

v

∆G

T variation of Gv with temperature

v

V

o(RMS)

V

o(RMS)

V

no(RMS)

V

no(RMS)

input impedance 17 21 25 kΩ

output impedance single-ended − 4 −Ω
voltage gain (see Fig.21) I

= 15 mA;

line

R4 = 100 kΩ

single-ended R
differential R

= 300 Ω 30 31 32 dB

T

= 600 Ω 36 37 38 dB

T

f = 300 and 3400 Hz −0.5 −0.2 0 dB

referred to 0.8 kHz

referred to 25 °C

output voltage
(RMS value)

without R6;
I

= 50 mA;

line

T

= −25 to +75 °C

amb

TDA = 2%;
sinewave drive;

−±0.2 − dB

R4 = 100 kΩ;
I

= 15 mA

line

single-ended R
differential R
differential C

= 150 Ω−0.2 − V

T

= 450 Ω−0.37 − V

T

= 47 nF;

T

− 0.52 − V
Rs = 100 Ω;
f = 3400 Hz

output voltage
(RMS value)

Ip = 0 mA;
TDA = 10%;
sinewave drive;
R4 = 100 kΩ;
RT = 150 Ω

I

= 4 mA − 20 − mV

line

I

= 7 mA − 160 − mV

line

noise output voltage
(RMS value)

I

= 15 mA;

line

R4 = 100 kΩ;
psophometrically
weighted (P53 curve);
pin IR open-circuit

single-ended R
differential R

noise output voltage
(RMS value)

= 300 Ω−45 −µV

T

= 600 Ω−90 −µV

T

see Fig.21;
S1 in position 2;
200 Ω between
MIC− and MIC+;
single-ended;
RT = 300 Ω

R7 = 68 kΩ−100 −µV
R7 = 24.9 kΩ−65 −µV

March 1994 21

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit

TEA1064B

with dialler interface and transmit level dynamic limiting

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Gain adjustment input GAR (pin 6)

∆G

v

receiving amplifier gain
adjustment range

MUTE input (pin 14)

V
V
I

mute

∆G

IH
IL

v

HIGH level input voltage 1.5 +V
LOW level input voltage 0 − 0.3 +V
input current − 11 20 µA
change of microphone amplifier

gain at mute on

G

v

voltage gain from input
DTMF-SLPE to QR+ output
with mute on

Power-down input PD (pin 15)

V

IH

V

IL

I

PD

HIGH level input voltage 1.5 +V
LOW level input voltage 0 − 0.3 +V
input current − 510µΑ

Automatic gain control input AGC (pin 18)

controlling the gain from
IR (pin 13) to QR+, QR−
(pins 4, 5) and the gain from
MIC+, MIC− (pins 8, 9) to LN (pin 1)

G

I

v

line

gain control range with respect to
I

=15mA

line

highest line current for maximum
gain

I

line

lowest line current for minimum
gain

∆G

v

Microphone mute input DLS/

V

IL

I

IL

change of gain between
I

= 15 and 35 mA

line

MMUTE (pin 7)

LOW level input voltage V
input current at LOW level input

voltage

t

rel

release time after a LOW level on
pin 7

∆G

v

change of microphone amplifier
gain at LOW level input voltage
on pin 7

MUTE = HIGH −−100 − dB

MUTE = HIGH;
single-ended load;
RL= 300 Ω

R6 = 93.1 kΩ
(between pins 18 and

11)

I

=75mA −5.7 −6.1 −6.5 dB

line

C16 = 470 nF − 30 − ms

−11 −+8dB

− VCC+0.4 V

EE2

V

EE2

−−18 − dB

EE2

− V

CC1

+0.4 V

EE2

V

− 24 − mA

− 61 − mA

−0.9 −1.4 −1.9 dB

EE1

− V

EE1

+0.3 V

−85 −60 −35 µA

−−100 − dB

March 1994 22

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March 1994 23

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit

with dialler interface and transmit level dynamic limiting

handbook, full pagewidth

I

p

C1

C15
220
µF

V

i

100 µF

10

µF

V

i

13

IR

9

MIC+

8

MIC−

12

DTMF

14

MUTE

15

PD

7

DLS/MMUTE

C16
470 nF

R16

392 Ω

R1

620 Ω

16 1

V

CC

TEA1064B

V

EE2VEE1

REG AGC STAB

C3

4.7

µF

I

line

LN

SLPE

18171119

10 20

R5

3.6

R6

kΩ

QR−

QR+

GAR

GAS1

GAS2

R9
20 Ω

4

5

6

2

3

R4

100

kΩ

R7
68
kΩ

100 µF

R

600 Ω

C4
100 pF

C7 1 nF

C6
100 pF

V

o

L

11 to

140 mA

MBA443

For measuring gain from MIC+ and MIC− the MUTE input should be LOW or open-circuit.
For measuring the DTMF input, the MUTE input should be HIGH.
Inputs not being tested should be open-circuit.

Fig.20 Test circuit for defining voltage gain of MIC−, MIC+ and DTMF inputs; voltage gain (Gv) is defined as 20log Vo/Vi.

TEA1064B

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March 1994 24

R16

392 Ω

R2

100 nF

100

C1

µF

V

i

I

p

C15
220
µF

R5

3.92 kΩ

130 Ω

820

Ω

220

nF

R8

390

Ω

130 kΩ

S1

2
1

10
µF

13

9

8

12

14

15

7

C16
470 nF

V

IR

MIC+

MIC−

DTMF

MUTE

PD

DLS/MMUTE

CC

V

EE2VEE1

R1

620 Ω

16 1

LN

TEA1064B

REG AGC STAB

10 20

18171119

C3

4.7
µF

R6

R5

3.6
kΩ

GAS1

GAS2

SLPE

QR−

QR+

GAR

R9
20 Ω

4

Z

V

T

5

R4
kΩ

R7
68
kΩ

C4
100 pF

C7 1 nF

C6
100 pF

100

6

2

3

I

line

100 µF

o

R

L

600 Ω

11 to

140 mA

MBA444

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit

with dialler interface and transmit level dynamic limiting

handbook, full pagewidth

Fig.21 Test circuit for defining voltage gain of the receiving amplifier; voltage gain (Gv) is defined as 20logVo/Vi (with S1 in position 1).

TEA1064B

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March 1994 25

telephone

line

BAS11

(2×)

BZW14

(2×)

R10
13 Ω

R3

3.92 kΩ

R2
130 kΩ

R4

100 kΩ

Z

bal

C7

R8

390 Ω

C5

100 nF

R13

1 nF

C4
100 pF

R14

116

R9

LN

SLPE

C6

100 pF

13

IR

4

QR−

5

QR+

6

GAR

9

MIC+

8

MIC−

20 Ω

full pagewidth

R1

620 Ω

TEA1064B

REGGAS2GAS1

173220
R7
68

C3

kΩ

4.7
µF

392 Ω

V

CC

AGC STAB

18 10

R6

R16

DTMF

MUTE

DLS/MMUTE

V

V

EE1

11

R5

3.6
kΩ

PD

EE2

C1

100 µF

12

14

15

C15
220 µF

+

from dial

and

control circuits

−

7

19

R17

3.3 kΩ

C16
470
nF

APPLICATION INFORMATION

The basic application circuit is shown in Fig.22 and a typical application is shown in Fig.23.

with dialler interface and transmit level dynamic limiting

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit

MBA445

The diode bridge and R10 limit the current into, and the voltage across, the circuit during line transients.
A different protection arrangement is required for pulse dialling or register recall.

Fig.22 Basic application of TEA1064B with SLPE as supply reference for peripherals, shown here with piezo-electric earpiece and

DTMF dialling.

TEA1064B

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting

handbook, full pagewidth

telephone

line

cradle

contact

TEA1064B

V

EE1

BSN254A

LN

SLPE

DTMF

MUTE

V

EE2

PD

V

DTMF

M
FL

V

SS

DD

TEA1064B

PCD3310

MBA446

The broken line indicates optional flash (register recall by timed loop break).

Fig.23 Typical DTMF-pulse set application circuit (simplified) showing the TEA1064B with the CMOS bilingual

dialling circuit PCD3310.

March 1994 26

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting

PACKAGE OUTLINES

DIP20: plastic dual in-line package; 20 leads (300 mil)

D

seating plane

A

L

Z

20

e

b

b

11

1

w M

1

TEA1064B

SOT146-1

M

E

A

2

A

c

(e )

1

M

H

pin 1 index

1

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

A

A

UNIT

inches

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

max.

mm

OUTLINE

VERSION

SOT146-1

1 2

min.

max.

1.73

1.30

0.068

0.051

IEC JEDEC EIAJ

b

b

1

0.53

0.38

0.021

0.015

0.36

0.23

0.014

0.009

REFERENCES

cD E e M

(1) (1)

26.92

26.54

1.060

1.045

SC603

6.40

6.22

0.25

0.24

E

10

(1)

1

3.60

3.05

0.14

0.12

8.25

7.80

0.32

0.31

EUROPEAN

PROJECTION

H

E

10.0

0.2542.54 7.62

8.3

0.39

0.010.10 0.30

0.33

ISSUE DATE

92-11-17
95-05-24

M

L

e

Z

w

max.

2.04.2 0.51 3.2

0.0780.17 0.020 0.13

March 1994 27

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting

SO20: plastic small outline package; 20 leads; body width 7.5 mm

D

c

y

Z

20

11

TEA1064B

SOT163-1

E

H

E

A

X

v M

A

pin 1 index

1

e

0 5 10 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

A

max.

2.65

0.10

A

1

0.30

0.10

0.012

0.004

A2A3b

2.45

0.25

2.25

0.096

0.01

0.089

p

0.49

0.36

0.019

0.014

cD

0.32

0.23

0.013

0.009

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

10

w M

b

p

scale

(1)E(1) (1)

13.0

12.6

0.51

0.49

eHELLpQ

7.6

1.27

7.4

0.30

0.050

0.29

10.65

10.00

0.419

0.394

Q

A

2

0.055

A

1.4

1

detail X

1.1

1.1

1.0

0.4

0.043

0.043

0.039

0.016

(A )

L

p

L

0.25

0.01

A

3

θ

0.25 0.1

0.01

0.004

ywv θ

Z

0.9

0.4

0.035

0.016

o

8

o

0

OUTLINE
VERSION

SOT163-1

IEC JEDEC EIAJ

075E04 MS-013AC

REFERENCES

March 1994 28

EUROPEAN

PROJECTION

ISSUE DATE

95-01-24
97-05-22

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in

“Data Handbook IC26; Integrated Circuit Packages”

our
(order code 9398 652 90011).

DIP

S

OLDERING BY DIPPING OR BY WAVE

The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

R

EPAIRING SOLDERED JOINTS

Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

SO

REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO

packages.

stg max

). If the

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

AVE SOLDERING

W
Wave soldering techniques can be used for all SO

packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

EPAIRING SOLDERED JOINTS

R
Fix the component by first soldering two diagonally-

opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

TEA1064B

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

March 1994 29

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit

TEA1064B

with dialler interface and transmit level dynamic limiting

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

March 1994 30

Philips Semiconductors Product specification

Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting

NOTES

TEA1064B

March 1994 31

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© Philips Electronics N.V. 1998 SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

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Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 415102/00/02/pp32 Date of release: March 1994 Document order number: 9397 750 nnnnn