Datasheet TDA8808AT, TDA8808T Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TDA8808T
TDA8808AT

Photo diode signal processor for
compact disc players

Product specification
File under Integrated Circuits, IC01

November 1987

Philips Semiconductors Product specification

Photo diode signal processor for
compact disc players

TDA8808T

TDA8808AT

GENERAL DESCRIPTION

The TDA8808 is a bipolar integrated circuit designed for use in compact disc players with a single spot read-out system.
It amplifies the photo-diode signals and processes the error signals for the focus- and radial control network.

Features

• Data amplifier with equalizer and AGC

• Offset-free pre-amplifier with AGC for the servo signals

• Trackloss and drop-out detection

• Start-up procedure for focus

• Normalizing focus error output signal to minimize radial error interference

• Laser supply amplifier and reference source

• Both TDA8808T and TDA8808AT versions suitable for car, portable and home applications

• Single and dual supply application

• Focus in-lock signal; ready signal output (RD).

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

V

P

Supply voltage range 4,5 5,0 5,5 V
External voltage range

V

ext

V

ext

I

Q

TDA8808T −5,5 −5,0 0 V
TDA8808AT V

P

10 12 V
Quiescent supply current Si/RD = 0 V 7,5 10 12,5 mA
HF input current

I

HFin(p-p)

(peak-to-peak value) f

= 100 kHz 3 − 10 µA

HFin

LF input current

I

D

I

LO

(for each diode input) 0 − 6 µA
Laser supply output current Si/R7D = HIGH Z −8 −4 −2mA
Operating ambient

T

amb

temperature range −30 −+85 °C

PACKAGE OUTLINE

28-lead mini-pack; plastic (SO28; SOT136A); SOT136-1; 1996 August 13.

November 1987 2

Philips Semiconductors Product specification

Photo diode signal processor for compact
disc players

TDA8808T

TDA8808AT

Fig.1 Block diagram.

November 1987 3

Philips Semiconductors Product specification

Photo diode signal processor for compact
disc players

PINNING

TDA8808T

TDA8808AT

Fig.2 Pinning diagram.

November 1987 4

Philips Semiconductors Product specification

Photo diode signal processor for compact
disc players

Pin functions

PIN MNEMONIC DESCRIPTION

1 GCHF Gain control input of HF amplifier. Current output from HF amplitude detector
2V
3 HFout HF amplifier and equalizer voltage output
4 DET HF detector voltage input
5 Sc Starting up capacitor input
6 Si/
7 Beq Equalizer reference current input
8 Bgc DC and LF gain control reference current input
9 FOC START Focus normalizing circuit starting current
10 PLLH PLL on hold output
11
12
13 V

14 LPF Low pass filter for I
15 FE Current output of normalized, switched focus error signal
16 FElag Current output of switched focus error signal, intended for lag network.
17 LO Laser amplifier current output
18 LM Laser monitor diode input
19 GCLF Gain control input for AC and LF amplifiers. Current output from LF amplitude detector
20 Re2 Summation of amplified currents from D3 and D4
21 Re1 Summation of amplified currents from D1 and D2
23, 22 D1, D2 Current inputs to DC and LF photo diode amplifier
24, 25 D3, D4 Current inputs to DC and LF photo diode amplifier
26 HFin Current input to HF amplifier
27 GND Ground connection of device: also substrate connection for TDA8808AT
28 DEC Decoupling input (internal bypass)

P

RD On/off control (start input); ready signal output (starting up procedure successful)

TL Track loss output
DODS Drop out detector suppression input

ext

Positive supply voltage

TDA8808T
Negative supply connection for FE and FElag output stage; also
substrate connection
TDA8808AT
Positive supply connection for FE and FElag output stage

, used in track loss (TL) detector and LF gain control

ret

TDA8808T

TDA8808AT

November 1987 5

Philips Semiconductors Product specification

Photo diode signal processor for compact
disc players

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER MIN. MAX. UNIT

Supply voltage ranges (see Fig.3)

TDA8808T

V

P−V(ext)

V

GND−V(ext)

V

ext−VGND

V

P−VGND

V

O

V

O

V

O

V

O

P

tot

T

stg

T

amb

T

j

pin 2 to pin 13 −0,3 13 V
pin 27 to pin 13 −0,3 13 V
TDA8808AT
pin 13 to 27 −0,3 13 V
pin 2 to pin 27 −0,3 13 V

Output voltage ranges

except FE and FE
FE and FE
FE and FE

lag
lag

lag

(TDA8808T) V
(TDA8808AT) V

LM (open loop) V
Total power dissipation see Fig.4
Storage temperature range −55 + 150 °C
Operating ambient temperature range −30 + 85 °C
Operating junction temperature − 150 °C

TDA8808T

TDA8808AT

0V

ext
GND
GND

P

V

P

V

ext

V

P

V
V
V
V

THERMAL RESISTANCE

From junction to ambient R

th j-a

= 140 K/W

Fig.3 Supply voltages; (a) TDA8808T,

(b) TDA8808AT.

November 1987 6

Fig.4 Power derating curve.

Philips Semiconductors Product specification

Photo diode signal processor for compact
disc players

TDA8808T

TDA8808AT

CHARACTERISTICS

= + 5 V; V

V

P

(TDA8808T); V
all voltages measured with respect to V

GND

FE

= 0 V; V

= V

FElag

= −5 V (TDA8808T); V

ext

= 5 V (TDA8808A T); R

, unless otherwise specified

GND

= + 10 V (TDA8808AT); V

ext

FOC START

= 3,3 kΩ; I

Beq

= V

RE1

= I

= 50 µA (current sources); T

Bgc

= 3,5 V; VFE = V

RE2

FElag

= 25 °C;

amb

= 0 V

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

V

P

Supply voltage range 4,5 5,0 5,5 V
External voltage range

V

ext

V

ext

I

Q

TDA8808T −5,5 −5,0 0 V
TDA8808AT V

Quiescent supply current V

= 0 V 7,5 10 12,5 mA

Si/RD

P

10 12 V

Reference input (Beq)

V
I

Beq

Beq

Input voltage level 500 560 620 mV
Input current −−50 −µA

Reference input (Bgc)

V
I

Bgc

Bgc

Input voltage level 1,15 1,25 1,35 V
Input current −−50 −µA

Decoupling input (DEC)

V
Z

DEC

DEC

Input voltage level − VP−1,4 − V

 Input impedance − 2 − kΩ

HF input (HFin)

V

HFin

Input voltage level − 1,4 − V
HF input current

I

HFin(p-p)

 Input impedance 0,5 1 2 kΩ

Z

HFin

(peak-to-peak value) f

= 100 kHz 3 − 10 µA

HFin

HF part

DC characteristics

= ± 1 µA

I

V

∆

HFout

Gain G1()

=

---------------------

∆

I

HFin

G1(max) Maximum gain V
G1(min) Minimum gain V

HFin

= 4 V 390 480 570 mV/µA

GCHF

= 1,5V −5 0 5 mV/µA

GCHF

AC characteristics

G2 note 1 2 3,5 5 dB

Gain G2()20

G3 note 2 4 5,5 7 dB

Gain G3()20

V

O1

----------log=
V

O2

V

O1

----------log=
V

O2

Phase of input/output signal

φ at 1 MHz note 3 −π/2 − rad.

November 1987 7

Philips Semiconductors Product specification

Photo diode signal processor for compact
disc players

TDA8808T

TDA8808AT

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Group delay

τ300 at f

= 300 kHz + ∆f note 3 − 290 − ns

HFin

Flatness

∆τ between 0,1 and 1 MHz note 3 * 9 * ns

HF output (HFout)
Output voltage

V

HFout

= 0 V

HFin

= 4 V 1,5 2,4 3,3 V

GCHF

at I

Output voltage

(peak-to-peak value)

V

O1(p-p)

V

O(p-p)

Z

HFout

at I
at I

 Output impedance − 60 −Ω

HF detector input (DET)

V

DET0

DC voltage level I

= 7 µA note 4 1 1,20 − V

HFin(p-p)

= 4 to 10 µA note 5 −20% M

HFin(p-p)

1

see Fig.5

= 0 − 2,2 − V

DET

+20% V

Positive reference voltage

V

V

refp

DET

to V

DET0

−10% 540 +10% mV

Negative reference voltage

V

V

refn

 Input impedance − 9 − kΩ

Z

DET

DET

to V

DET0

−5% −V

refp

+5% mV

Gain control (GCHF)

Input voltage for:
V
V

GCHF
GCHF

minimum HF gain − 1,8 − V
maximum HF gain − 3,4 − V

Input impedance
Z

GCHF

 at V

= 1,5 to 4 V − 25 − MΩ

GCHF

Output current (see Fig.5)

∆V

< V

I

GCHF

I

GCHF

I

GCHF

I

GCHF

I

GCHF

DET

∆V

DET

< ∆V

V

refn

V

DETp1

< ∆V

V

refn

V

DETp1

V

DETn1

V

DETp1/Vrefp

< V

< ∆V

< ∆V
< ∆V

or ∆V

refn

or ∆V

refn

< V

DET

DET

< V

DET

DET
DET

; V

DETn1/Vrefn

< V

< V
< V

DET
DET

DETn1

refp

DETn1

refp
DETp1

> V
> V

or

or

refp
refp

DODS = LOW 90 100 110 µA
DODS = HIGH 86 96 106 µA

DODS = LOW −0,65 −0,35 −0,2 µA

DODS = HIGH −5,0 −4,4 −3,8 µA
DODS = X

**

−0,65 −0,35 −0,2 µA
10 12,5 15 %

November 1987 8

Philips Semiconductors Product specification

Photo diode signal processor for compact
disc players

TDA8808T

TDA8808AT

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

PLLH output (pin 10)

Output voltage LOW

I

V

PLLHL

= 400 µA (sink current) −− 0,4 V

PLLH

Output voltage HIGH

I

V

PLLHH

I

PLLH

I

PLLH

I

DT1

= −50 µA (source current) 2,4 −−V

PLLH

Output sink current 0,5 1,5 − mA

Output source current −−100 −50 µA

Threshold total LF current V

V

DETp2/Vrefp

; V

DETn2/Vrefn

= 3,5 V − 2,0 −µA

GCLF

57,5 62,5 67,5 %

LF photo diode inputs (pins 22 to

25)

(values given for each input)
V

D

I

D

 Input impedance at 1 MHz ID = 1 µA − 10 − kΩ

Z

D

DC voltage level − 1,2 − V

Input current range 0 − 6 µA

LF gain

Maximum DC gain

= 3,5 V

V

V

GCLF

GCLF

= 3,5 V

−10% S

1

or 55 S

1

−10% S

1

or 55 S

1

1
1

1
1

S

1

S

1

S

1

S

1

I

=

=

Re1

--------------------- ­ID1ID2+

=0

I

Re2

--------------------- ­ID3ID4+

=0

;

;

for: A

1

I

D3=ID4

A

11

A

12

A

21

A

22

at lD1 = 0 µA; ID2 = 1 µAS
at lD1 = 1 µA; ID2 = 0 µAS

for: A

2

I

D1=ID2

at lD3 = 0 µA; ID4 = 1 µAS
at lD3 = 1 µA; ID4 = 0 µAS

S1 mean value of

A

, A12, A21, A

11

22

55 64 84

Minimum DC gain

V

= 0,8 V

V

GCLF

GCLF

= 0,8 V

2-1
2-1

−1S

2

S

2

S

2

2

S2+1
S2+1

S

+1

2

I

Re1

=

for: A

3

--------------------- ­ID1ID2+

4

=

=0

I

--------------------- ­ID3ID4+

=0

I

D3=ID4

A

31

A

32

at lD1 = 0 µA; ID2 = 1 µAS
at lD1 = 1 µA; ID2 = 0 µAS

for: A

I

D1=ID2

A

41

at lD3 = 0 µA; ID4 = 1 µAS

Re2

;

;

November 1987 9

Philips Semiconductors Product specification

Photo diode signal processor for compact
disc players

TDA8808T

TDA8808AT

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

A

42

at lD3 = 1 µA; ID4 = 0 µAS

mean value of

S

2

, A32, A41, A

A

31

42

−1S

2

2

−0,1 0,7 3

S

+1

2

AC gain for:

= 20 log P1; ID3 = ID4 = 0

G

4

G

4

G

4

G

5

G

5

at ID1 = 0; I
at I

= 20 log P2; ID1 = ID2 = 0

G

5

= 1 µA + 2 µADC; ID2 = 0 note 6 −4,5 −3 −1,5 dB

D1(p-p)

at ID3 = 0; I
at I

= 1 µA + 2 µADC; ID4 = 0 note 7 −4,5 −3 −1,5 dB

D3(p-p)

= 1 µA + 2 µADC note 6 −4,5 −3 −1,5 dB

D2(p-p)

= 1 µA + 2 µADC note 7 −4,5 −3 −1,5 dB

D4(p-p)

Gain control (GCLF)

Input voltage for:
V
V
Z

GCLF
GCLF

GCLF

minimum LF gain − 1 − V
maximum LF gain − 2,8 − V

 Input impedance − 25 − MΩ

Threshold total LF current I

DT3

− 1,6 − mA

Output current (see Fig.7)
I

GCLF

I

GCLF

∆V

DET<VDETn2

or ∆V

DET>VDETp2

IDT< I

IDT> I

DT3

;S

DT3

−−0,6 ± 10 µA

−10 S

6

I

Bgc

6

S6+10 µA

note 8

I

GCLF

V

DETn2

< ∆V

DET

< V

DETp2

−−0,2 ± 2 µA
I

Bgc

Re1, Re2 outputs (pin 21, pin 20)

GCLF

= 3,5 V

I

Re1

I

Re1

I

Re2

I

Re2

Output current V

at ID1= ID2= 1 µA; ID3= ID4= 0 110 128 168 mA
at ID1= ID2= ID3= ID4= 0 − 0 − mA
at lD1 = ID2= 0; ID3= ID4= 1 µA 110 128 168 mA
at lD1 = ID2= ID3= ID4= 0 − 0 − mA

Output voltage

V

Re1

V

Re2

pin 21 1 − V
pin 20 1 − V

P
P

V
V

Output impedance

 pin 21 − 1 − MΩ

Z

Re1

 pin 20 − 1 − MΩ

Z

Re2

Reference current (I
I

= I

I

ret

ret

Re1

= I

Re2

ret

)

note 200 220 240 µA

LPF output (pin 14)

V

LPF

DC voltage level note 9 VP−2,1 VP−1,7 VP−1,4 V

November 1987 10

Philips Semiconductors Product specification

Photo diode signal processor for compact
disc players

TDA8808T

TDA8808AT

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Z

 Input impedance − 3 − kΩ

LPF

FOC START input (pin 9)
Start current (ST) for FE

I

ST

I

ST

(−I

FOC START

= IST) Si/RD = HIGH Z 75 150 500 µA

Si/RD = LOW − 0 −µA

Start voltage (ST) for FE

V

ST

V

ST

(V

FOC START

= VST) Si/RD = HIGH Z 430 530 630 mV

FElag output (pin 16)

Si/RD = LOW −20 0 20 mV
see Fig.8

Output voltage

V

FElag

V

FElag

 Output impedance − 8 − MΩ

Z

FElag

I

FElag=IO

I

FElag

TDA8808T V
TDA8808AT +1,5 − V

Output current Si/

ID1 = ID2 = 1D3 = ID4 = 1 µAV

= ID3 = 1 µA;

I

D2

ID1 = ID4 = 2 µAV

RD = HIGH Z;

= 3,5 V

V

GCLF

= V

Sc

P

= V

Sc

P

+l,5 − VP−1,5 V

ext

−1,5 V

ext

−10 0 +10 µA

−10% −2S
+I

O

1+

10% µA

ID2 = ID3 = 2 µA;

I

FElag

ID1 = ID4 = 1 µAV

Sc

= V

P

−10% −2S
+I

O

1

+10% µA

ID2 = ID3 = 2 µA;

I

FElag

I

FElag

ID1 = ID4 = 1 µAV

= ID3 = 1 µA;

I

D2

ID1 = ID4 = 2 µAV

FE output (pin 15)

= 1,5 V −50 +5µA

Sc

= 1,5 V −50 +5µA

Sc

see Fig.8

Output voltage

V

FE

V

FE

 Output impedance − 8 − MΩ

Z

FE

TDA8808T V

+1,5 − VP−1,5 V

ext

TDA8808AT +1,5 − V

−1,5 V

ext

Output current note 10

= ID4 = 2 µA;

I

D1

I

FE

I

FE

I

FE

I

FE

ID2 = ID3 = 1 µAV
I

= ID4 = 1 µA;

D1

ID2 = ID3 = 2 µAV

= ID4 = 2 µA;

I

D1

ID2 = ID3 = 1 µAV

= ID4 = 1 µA;

I

D1

ID2 = ID3 = 2 µAV

= 0 −10% −2S1−134−IST+10% µA

Sc

= 0 −10% −4S1−67−I

Sc

= 1,25 V −10% −2S1−134+IST+20% µA

Sc

= 1,25 V −10% −4S1−67+I

Sc

+10% µA

ST

+20% µA

ST

November 1987 11

Philips Semiconductors Product specification

Photo diode signal processor for compact
disc players

TDA8808T

TDA8808AT

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ID1 = ID4 = 2 µA;

I

FE

I

FE

= S

I

FE

6

I

FE

I

FE

I

FE

ID2 = ID3 = 1 µAV

= ID4 = 1 µA;

I

D1

ID2 = ID3 = 2 µAV

= ID4 = 2 µA;

I

D1

ID2 = ID3 = 1 µAV

= ID4 = 1 µA;

I

D1

ID2 = ID3 = 2 µAV

= ID2 =

I

D1

ID3 = ID4 = 1 µAV

= ID2 =

I

D1

ID3 = ID4 = 0 VSc = V

= 1,75 V −20% −2S1+67+I

Sc

= 1,75 V −10% −4S1−67+I

Sc

Sc

Sc

Sc

= V

= V

= V

P

P

P

P

−20% 67 +20% µA

−15% −S

6

−10 0 +10 µA

−50 +5µA

+10% µA

ST

+20% µA

ST

+15% µA

DODS logic input (pin 12)
Switching levels

DODS input voltage LOW −− +0,8 V

V

DODS input voltage HIGH +2 −−V

V

DODS Input source current −35 −25 −15 µA

I

Starting input (Sc)

V

Sc

V

Sc

 Output impedance − * − MΩ

Z

Sc

Output voltage Si/RD = LOW − 0 − V
Output voltage S1/RD = HIGH Z −− V

Output source current Si/

I

Sc

I

Sc

Output sink current Si/RD = LOW 0,5 1,2 2,0 mA

RD logic input/output

Si/

see Fig.9

−0,5 V

P

RD = HIGH Z;

VSc = 1,5 V −1,2 −1 −0,8 µA

(pin 20) see Fig.9
Voltage ‘forced LOW’ ISi/RD = 400 µA;

= 2,5 V;

V

Sc

/RD V

V

Si

< 2,8 V − 0,15 0,4 V

GCLF

Switching levels

/RD input voltage LOW −− +0,8 V

V

Si

/RD input voltage HIGH Z ISi/RD = −5 µA 2,4 2,8 − V

V

Si

/RD Input source current LOW −35 −25 −15 µA

I

Si

TL logic output (pin 11)
Output voltage level LOW I

V

TL

Output voltage level HIGH I

V

TL

see Fig.6

= 400 µA;

TL

(sink current) − 0,15 0,4 V

= −50 µA;

TL

(source current) 2,4 −−V

November 1987 12

Philips Semiconductors Product specification

Photo diode signal processor for compact
disc players

TDA8808T

TDA8808AT

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Threshold total LF current I

DT2

− 3,9 −µA

Output voltage DODS = HIGH

(≥ 2,4 V)

V

TL

V

TL

V

TL

V

TL

Output voltage

DET

DET
DETn1
DETn2
DETp1
DETn2
DETp1

< V
> V

< ∆V
< V
< ∆V
< V
< V

∆V
∆V

V
V
V
V
V

DETn2
DETp2

DET

DET

DET
DET
DET

or

< V

< V

< V
< V
< V

DETp1

DETn1

DETp2
DETn1
DETp2

or

or

IDTdon’t care 2,4 −−V
IDTdon’t care 2,4 −−V

IDT< I

IDT> I

DT2

DT2

2,4 −−V

− 0,15 0,4 V
DODS = LOW
(≤ 0,8 V)

DET

DET
DETn2
DETn2

< V
> V

< ∆V
< ∆V

∆V

V

TL

V

TL

V

TL

TL Output sink current VTL = LOW 1 2,2 − mA

I
I

TL Output source current VTL = HIGH −−100 −50 µA

∆V
V
V

DETn2
DETp2

DET
DET

or

< V
< V

DETp2
DETp2

IDTdon’t care 2,4 −−V
IDT< I
IDT> I

DT2
DT2

2,4 −−V

− 0,15 0,4 V

τ1 Delay times (see Fig.10) 7 8,5 10 µs
τ2 see Fig.6 τ1−15%

or 6,5

−τ1+ 5%
or 10

µs

τ3 7 8,5 10 µs
τ4 τ3−10%

or 7

−τ3+10%
or 10

µs

LO output (pin 17)

V

LO

Z

 Output impedance − 95 − kΩ

LO

I

LO

I

LO

Output voltage −− V

P

Output leakage current Si/RD = LOW −10 −0,1 0 µA
Maximum output current Si/RD = HIGH Z −8 −4 −2mA

LM input (pin 18)

V

LM

I

LM

Input voltage closed loop 185 205 225 mV
Input bias current −2 −−µA

Laser supply

Transconductance

G

LDC

G

LDC

For DC (note 11) Si/RD = HIGH Z − 0,5 − A/V

Si/RD = LOW − 0 − A/V

November 1987 13

- 0,5 V

Philips Semiconductors Product specification

Photo diode signal processor for compact
disc players

TDA8808T

TDA8808AT

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

τLO For AC (note 12) delay time − * − ns

* Value to be fixed.
** X = don’t care.

Notes to the characteristics

1. Voltage output signal VO1 measured at f
Voltage output signal VO2 measured at f

2. Voltage output signal VO1 measured at f
Voltage output signal VO2 measured at f

3. Phase of input/output signal, group delay and flatness measured at I

Group delay τ

Flatness: ∆τ = τ

dφ

=

------- ­dw

max−τmin

; ∆f ≈ 50 kHz.

.

4. HF part output voltage for closed loop conditions; f

5. HF part output voltage for closed loop conditions; f

= 700 kHz; I

HFin

= 100 kHz; I

HFin

= 1 MHz; I

HFin

= 100 kHz; I

HFin

HFin(p-p)
HFin(p-p)

HFin(p-p)

HFin(p-p)

= 500 kHz.

HFin

= 0,1 to 1 MHz.

HFin

= 7 µA; V
= 7 µA; V

= 7 µA; V

= 7 µA; V

HFin(p-p)

GCHF
GCHF

GCHF

GCHF

= 1 µA; V

= 2,4 V.
= 2,4 V.

= 2,4 V.

= 2,4 V.

GCHF

= 4 V.

M1 is the measured value of VO1.

6.

1

------------------------------------------­I

D1

is the measuredvalue of

P

Where: (1) are the current levels at f

(2) are the current levels at f

Measurement taken at V

is the measured value of

P

7.

2

GCLF

= 3,5 V.

------------------------------------------­I

D3

Where: (1) are the current levels at f

(2) are the current levels at f

Measurement taken at V

8. S

is the measured value of

6

Measurement taken at V

9. LF part reference current I
Measurement taken at IDT > I

10. FE output current measured at

= 3,5 V.

GCLF

I

DT

S

------- -

1

4

= 3,5 V.

GCLF

and low-pass filter output voltage for closed loop conditions.

ret

∆V

DT3;

DET

V

GCLF

11. Laser supply transconductance for DC

ILO∆

G

LDC

--------------

∆

V

LM

0I

– 2mA<<()=

LO

I

Re1

1() ID21()+

I

Re2

1() ID41()+

,–⋅

11I

< V

1()

= 25 kHz.

i

= 1 kHz.

i

1()

= 25 kHz.

i

= 1 kHz.

i

Bgc

or ∆V

DETn2

2() ID22()+

I

D1

⋅

-------------------------------------------- ­I

2()

Re1

I

2() ID42()+

D3

⋅

-------------------------------------------- ­I

DET

Re2

> V

2()

DETp2

35VandSi,= RD⁄ HIGH Z I

.

V

FOC START

=;=

--------------------------------

ST

R

FOC START

November 1987 14

Philips Semiconductors Product specification

Photo diode signal processor for compact
disc players

12. Laser supply transconductance for AC
G

LAC

Where: S is the laplace operator in the frequency domain.

G

LO

⋅=

1

----------------------------­1SτLO⋅+

TDA8808T

TDA8808AT

- - - - - - - - DODS = HIGH
 DODS = LOW

Fig.5 HF gain control current (I

) as a function of input voltage ∆V

GCHF

DET

.

November 1987 15

Philips Semiconductors Product specification

Photo diode signal processor for compact
disc players

TDA8808T

TDA8808AT

(1)
 IDT > I

- - - - - - - - IDT < I
IDT = ID1+ ID2+ ID3+ I
I

= 2,67 I

DT1

I

= 5 I

DT2

Bgc/S1

S1 = average maximum LF gain

DT1
DT1

D4

Bgc/S1

(2)
 IDT > I

- - - - - - - - IDT < I
DODS = LOW

(3)
 IDT > I

- - - - - - - - IDT < I
DODS = HIGH

DT2

DT2

DT2
DT2

Fig.6 TL voltage as a function of input voltage ∆V

DET

.

November 1987 16

Philips Semiconductors Product specification

Photo diode signal processor for compact
disc players

- - - - - - - - IDT > I
 IDT < I
IDT = ID1+ ID2+ ID3+ I
I

= 2 I

DT3

Bgc/S1

S1 = average maximum LF gain

DT3
DT3

D4

TDA8808T

TDA8808AT

Fig.7 LF gain control current (I

) as a function of input voltage ∆V

GCLF

DET

.

November 1987 17

Philips Semiconductors Product specification

Photo diode signal processor for compact
disc players

TDA8808T

TDA8808AT

I

ST

I

cont

I

cont

I

DT

I

DT3

S

1

(1 + 4)NN = not normalized currents = (ID1 + ID4) S
(2 + 3)NN = not normalized currents = (ID2 + ID3) S

14+()N

23+()N

Vj is the junction voltage (0,7 V typ.).

= −I

FOC START

= 2 I

if IDT > I

Bgc

= IDT× S1 if IDT < I
= ID1+ ID2 + ID3 + I
= 2 I

Bgc/S1

= average maximum LF gain

normalized currents

normalized currents

DT3

DT3

D4



I

D1



--------------------- ­ID1ID2+




I

D2



--------------------- ­ID1ID2+



Fig.8 FElag current output as a function of starting voltage input (VSc).

1
1

+

--------------------- ­ID3ID4+

+

--------------------- ­ID3ID4+

I

D4

I

×==

cont

I

D3

I

×==

cont

November 1987 18

Philips Semiconductors Product specification

Photo diode signal processor for compact
disc players

TDA8808T

TDA8808AT

RD: Si/RD forced LOW for ready signal
 V

-------- V
Vj is the junction voltage (0,7 V typ.)

GCLF

GCLF

< 2,8 V

> 3,5 V

Fig.9 Si/RD signal as a function of VSc.

Fig.10 Delay times between ∆V

November 1987 19

and VTL.

DET

Philips Semiconductors Product specification

Photo diode signal processor for compact
disc players

PACKAGE OUTLINE

SO28: plastic small outline package; 28 leads; body width 7.5 mm

D

c

y

Z

28

15

TDA8808T

TDA8808AT

SOT136-1

E

H

E

A

X

v M

A

pin 1 index

1

e

0 5 10 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

A

max.

2.65

0.10

A

0.30

0.10

0.012

0.004

1

A2A

2.45

2.25

0.096

0.089

0.25

0.01

b

3

p

0.49

0.32

0.36

0.23

0.019

0.013

0.014

0.009

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

(1)E(1) (1)

cD

18.1

7.6

17.7

7.4

0.71

0.30

0.69

0.29

14

w M

b

p

scale

eHELLpQ

1.27

0.050

10.65

10.00

0.42

0.39

1.4

0.055

Q

A

2

0.043

0.016

A

1.1

0.4

L

p

L

0.25 0.1

0.01

(A )

1

detail X

1.1

0.25

1.0

0.043

0.01

0.039

A

3

θ

ywv θ

Z

0.9

0.4

0.035

0.004

0.016

o

8

o

0

OUTLINE
VERSION

SOT136-1

IEC JEDEC EIAJ

075E06 MS-013AE

REFERENCES

November 1987 20

EUROPEAN

PROJECTION

ISSUE DATE

91-08-13

95-01-24

Philips Semiconductors Product specification

Photo diode signal processor for compact
disc players

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in

“IC Package Databook”

our

Reflow soldering

Reflow soldering techniques are suitable for all SO
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

(order code 9398 652 90011).

TDA8808T

TDA8808AT

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

Wave soldering techniques can be used for all SO
packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be

parallel to the solder flow.

• The package footprint must incorporate solder thieves at

the downstream end.

November 1987 21

Philips Semiconductors Product specification

Photo diode signal processor for compact
disc players

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

TDA8808T

TDA8808AT

November 1987 22