Datasheet TDA8552TS, TDA8552T Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TDA8552T; TDA8552TS

2 × 1.4 W BTL audio amplifiers with
digital volume control and
headphone sensing

Preliminary specification
Supersedes data of 1998 Feb 26
File under Integrated Circuits, IC01

1998 Jun 02

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing

FEATURES

• One pin digital volume control (for each channel)

• Volume setting with up/down pulses

• Auto repeat function on volume setting

• Headphone sensing

• Maximum gain set by selection pin

• Low sensitivity for EMC radiation

• Internal feedback resistors

• Flexibility in use

• Few external components

• Low saturation voltage of output stage

• Standby mode controlled by CMOS compatible levels

• Low standby current

• No switch-on/switch-off plops

• High supply voltage ripple rejection

• Protected against electrostatic discharge

• Outputs short-circuit safe to ground, V

load

• Thermally protected.

APPLICATIONS

and across the

DD

GENERAL DESCRIPTION

The TDA8552T is a two channel audio power amplifier that
provides an output power of 2 × 1.4 W into an 8 Ω load
using a 5 V power supply. The circuit contains two BTL
power amplifiers, two digital volume controls and
standby/mute logic. Volume and balance of the amplifiers
are controlled using two digital input pins which can be
driven by simple push-buttons or by a microcontroller.

Using the selection pin (GAINSEL) the maximum gain can
be set at 20 or 30 dB. The headphone sense input (HPS)
can be used to detect if a headphone is plugged into the
jack connector. If a headphone is plugged into the jack
connector the amplifier switches from the BTL to the SE
mode and the BTL loudspeakers are switched off. This
also results in a reduction of quiescent current
consumption.

The TDA8552T is contained in a 20-pin small outline
package. For the TDA8552TS, which is contained in a
20-pin very small outline package, the maximum output
power is limited by the maximum allowed ambient
temperature. More information can be found in Section
“Thermal design considerations”. The SO20 package has
the four corner leads connected to the die pad so that the
thermal behaviour can be improved by the PCB layout.

TDA8552T; TDA8552TS

• Portable consumer products

• Notebook computers

• Communication equipment.

ORDERING INFORMATION

TYPE

NUMBER

TDA8552T SO20 plastic small outline package; 20 leads; body width 7.5 mm SOT163-1
TDA8552TS SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1

NAME DESCRIPTION VERSION

PACKAGE

1998 Jun 02 2

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital

TDA8552T; TDA8552TS

volume control and headphone sensing

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

DD

I

q

I

stb

P

o

G

v

N

step

THD total harmonic distortion P
SVRR supply voltage ripple

supply voltage 2.7 5 5.5 V
quiescent supply current BTL mode; VDD=5V − 14 20 mA

BTL mode; V
SE mode; V
SE mode; V

= 3.3 V − 10 15 mA

DD

=5V − 8.5 12 mA

DD

= 3.3 V − 58mA

DD

standby current − 110µA
output power THD = 10%; RL=8Ω; VDD=5V 1 1.4 − W
voltage gain low gain; maximum volume − 20 − dB

low gain; minimum volume −−60 − dB
high gain; maximum volume − 30 − dB
high gain; minimum volume −−50 − dB

number of volume steps − 64 −

= 0.5 W − 0.1 − %

o

50 −−dB

rejection

1998 Jun 02 3

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing

BLOCK DIAGRAM

handbook, full pagewidth

17

IN1

UP/DOWN1

SVR

IN2

6

16

15

VOLUME
CONTROL

20
kΩ

0.5V

DD

UP/DOWN
COUNTER

up down

INTERFACE

VOLUME
CONTROL

20
kΩ

20 dB

30 dB

V

DD

15 kΩ

0.5V

DD

15 kΩ

0.5V

3.4 kΩ

1.6 kΩ

DD

0.5V

TDA8552T; TDA8552TS

V

DD1VDD2VDD3VDD4

381318

MASTER

15 kΩ

20 kΩ
20 kΩ

SLAVE

DD

TDA8552T

MASTER

12

OUT1+

19

OUT1−

2

OUT2+

UP/DOWN2

MODE

HPS

0.5V

UP/DOWN
COUNTER

7

INTERFACE

5

STANDBY/MUTE

4

AND OPERATING

DD

up down

20 dB

0.5V

DD

SELECTION

3.4 kΩ

1.6 kΩ

DD

0.5V

GAIN

V

DD

30 dB

15 kΩ

0.5V

15 kΩ

Fig.1 Block diagram.

15 kΩ

20 kΩ
20 kΩ

SLAVE

DD

1, 10, 11, 2014

GAINSEL GND1 to GND4

9

OUT2−

MGM608

1998 Jun 02 4

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing

PINNING

SYMBOL PIN

GND1 1 ground 1, substrate/leadframe
OUT2+ 2 positive loudspeaker terminal

V

DD1

HPS 4 digital input for headphone

MODE 5 digital trinary input for mode

UP/DOWN1 6 digital trinary input for volume

UP/DOWN2 7 digital trinary input for volume

V

DD2

OUT2− 9 negative loudspeaker terminal

GND2 10 ground 2, substrate/leadframe
GND3 11 ground 3, substrate/leadframe
OUT1+ 12 positive loudspeaker terminal

V

DD3

GAINSEL 14 digital input for gain selection
IN2 15 audio input channel 2
SVR 16 half supply voltage, decoupling

IN1 17 audio input channel 1
V

DD4

OUT1− 19 negative loudspeaker terminal

GND4 20 ground 4, substrate/leadframe

(1)

DESCRIPTION

output channel 2

3 supply voltage 1

sensing

selection (standby, mute and
operating)

control channel 1

control channel 2

8 supply voltage 2

output channel 2

output channel 1

13 supply voltage 3

ripple rejection

18 supply voltage 4

output channel 1

handbook, halfpage

UP/DOWN1
UP/DOWN2

TDA8552T; TDA8552TS

GND1

1

OUT2+

2

V

3

DD1
HPS

4

MODE

5

TDA8552T

6
7

V

8

DD2

OUT2−

9

GND2

10

MGM610

Fig.2 Pin configuration.

20
19
18
17
16
15
14
13
12
11

GND4
OUT1−
V

DD4

IN1
SVR
IN2
GAINSEL
V

DD3

OUT1+
GND3

Note

1. For the SO20 (SOT163-1) package only: the ground
pins 1, 10, 11 and 20 are mechanically connected to
the leadframe and electrically to the substrate of the
die. On the PCB the ground pins can be connected to
a copper area to decrease the thermal resistance.

1998 Jun 02 5

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing

FUNCTIONAL DESCRIPTION

The TDA8552T is a 2 × 1.4 W BTL audio power amplifier
capable of delivering 2 × 1.4 W output power into an 8 Ω
load at THD = 10% using a 5 V power supply. The gain of
the amplifier can be set by the digital volume control.
The gain in the maximum volume setting is 20 dB (low
gain) or 30 dB (high gain). This maximum gain can be
selected by the gain selection pin. The headphone sense
input (HPS) can be used to detect if a headphone is
plugged into the jack connector. If a headphone is plugged
into the jack connector the amplifier switches from the BTL
to the SE mode and the BTL loudspeakers are switched
off. This also results in a reduction of quiescent current
consumption. Using the MODE pin the device can be
switched to the standby condition, the mute condition or
the normal operating condition. The device is protected by
an internal thermal shutdown protection mechanism.

Power amplifier

The power amplifier is a Bridge-Tied Load (BTL) amplifier
with a complementary CMOS output stage. The total
voltage loss for both output power MOS transistors is
within 1 V and with a 5 V supply and an 8 Ω loudspeaker
an output power of 1.4 W can be delivered. The total gain
of this power amplifier can be set at 20 or 30 dB by the
gain selection pin.

Gain selection

TDA8552T; TDA8552TS

Volume control

Each attenuator is controlled with its own UP/DOWN pin
(trinary input):

• Floating UP/DOWN pin: volume remains unchanged

• Negative pulses: decreasing volume

• Positive pulses: increasing volume.

Each pulse on the UP/DOWN pin results in a change in
gain of (typical value).

In the basic application the UP/DOWN pin is switched to
ground or VDD by a double push-button. When the supply
voltage is initially connected, after a complete removal of
the supply, the initial state of the volume control is an
attenuation of 40 dB (low volume), so the gain of the total
amplifier is −20 dB in the low gain setting or −10 dB in the
high gain setting. After powering-up, some positive pulses
have to be applied to the UP/DOWN pin for turning up to
listening volume.

Auto repeat

If the UP/DOWN pin is LOW or HIGH for the wait time (t
in seconds) (one of the keys is pressed) then the device
starts making up or down pulses by itself with a frequency

given by (repeat function).

80

-----­64

1

-------­t

rep

1.25 dB=

wait

The gain selection can be used for a fixed gain setting,
depending on the application. The gain selection pin must
be hard wired to ground (20 dB) or to V
selecting during the operation is not advised, switching is
not guaranteed plop free.

Input attenuator

The volume control operates as a digitally controlled input
attenuator between the audio input pin and the power
amplifier. In the maximum volume control setting the
attenuation is 0 dB and in the minimum volume control
setting the typical attenuation is 80 dB. The attenuation
can be set in 64 steps by the UP/DOWN pin. Both
attenuators for channels 1 and 2 are separated from each
other and are controlled by there own UP/DOWN pin.
Balance control can be arranged by applying UP/DOWN
pulses only on pins 6 and 7, see Fig.5.

1998 Jun 02 6

(30 dB). Gain

DD

The wait time and the repeat frequency are set using an
internal RC oscillator with an accuracy of ±10%.

Volume settings in standby mode

When the device is switched with the MODE select pin to
the mute or the standby condition, the volume control
attenuation setting keeps its value, under the assumption
that the voltage on the V
minimum supply voltage. After switching the device back
to the operation mode, the previous volume setting is
maintained. In the standby mode the volume setting is
maintained as long as the minimum supply voltage is
available. The current consumption is very low,
approximately 1 µA (typ.). In battery fed applications the
volume setting can be maintained during battery exchange
if there is a supply capacitor available.

pin does not fall below the

DD

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing

Mode select pin

The device is in the standby mode (with a very low current
consumption) if the voltage at the MODE pin is between
V

and VDD− 0.5 V. At a mode select voltage level of less

DD

than 0.5 V the amplifier is fully operational. In the range
between 1 V and V
condition. The mute condition is useful for using it as a ‘fast
mute’, in this mode the output signal is suppressed, while
the volume setting remains at its value. It is advised to
keep the device in the mute condition while the input
capacitor is being charged. This can be achieved by
holding the MODE pin at a level of 0.5V
approximately 100 ms before giving the first volume-UP
pulses.

Headphone sense pin (HPS)

A headphone can be connected to the amplifier by using a
coupling capacitor for each channel. The common ground
pin of the headphone is connected to the ground of the
amplifier, see Fig.4. By using the HPS pin as illustrated in
Fig.4, the TDA8552T detects if a headphone jack plug is
inserted into the connector.

− 1 V the amplifier is in the mute

DD

, or by waiting

DD

TDA8552T; TDA8552TS

When no headphone is plugged in, the voltage level at the
HPS pin will remain LOW. A voltage less than V
the HPS pin will keep the device in the BTL mode, thus the
loudspeakers can be operational. If the HPS pin is not
connected then the device will remain in the BTL mode.

When a headphone is plugged into the connector, the
voltage at the HPS pin will be set to VDD. The device then
switches to the Single-Ended (SE) mode, this means that
the slave power amplifiers at the outputs OUT1− and
OUT2− will be switched to the standby mode. This results
in floating outputs OUT1− and OUT2−, the loudspeaker
signal is thus attenuated by approximately 80 dB and only
the headphone can operate.

One of the benefits of this system is that the loudspeaker
current does not flow through the jack connector switch,
which could give some output power loss. The other
benefit is that the quiescent current is reduced when the
headphone jack is inserted.

− 1V at

DD

1998 Jun 02 7

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital

TDA8552T; TDA8552TS

volume control and headphone sensing

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DD

V

i

I

ORM

T

stg

T

amb

V

sc

P

tot

THERMAL CHARACTERISTICS

See Section “Thermal design considerations” in Chapter “Test and application information”.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

supply voltage operating −0.3 +5.5 V
input voltage −0.3 VDD+ 0.3 V
repetitive peak output current − 1A
storage temperature −55 +150 °C
operating ambient temperature −40 +85 °C
AC and DC short-circuit safe voltage − 5.5 V
maximum power dissipation SO20 − 2.2 W

SSOP20 − 1.1 W

thermal resistance from junction to ambient

for the TDA8552T (SO20) in free air 60 K/W

extra copper 55 K/W

for the TDA8552TS (SSOP20) in free air 110 K/W

extra copper 80 K/W

Table 1 Power rating; note 1

MUSIC POWER

V

(V) RL(Ω)

DD

Po(W)

THD = 10%

OPERATION

T

P

(W)

max

amb(max)

SO20 SSOP20

3.3 4 0.9 BTL 0.55 120 106

3.3 8 0.6 BTL 0.28 134 127

3.3 16 0.3 BTL 0.14 142 139

3.3 32SE 0.035 headphone 0.03 150 150

5.0 4 2.0 BTL 1.25 81 50

5.0 8 1.4 BTL 0.65 114 98

5.0 16 0.8 BTL 0.32 132 124

5.0 32SE 0.09 headphone 0.07 146 144
continuous sine wave

3.3 4 0.9 BTL 1.1 89 62

5 8 1.4 BTL 1.25 81 50

Note

1. The power rating is based on R

with recommended copper pattern of at least 4 × 1cm2 to the corner leads and

th(j-a)

copper under the IC package.

(°C)

1998 Jun 02 8

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital

TDA8552T; TDA8552TS

volume control and headphone sensing

QUALITY SPECIFICATION

Quality specification in accordance with

DC CHARACTERISTICS

V

DD

=5V; T

=25°C; RL=8Ω; V

amb

specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

DD

I

DD

I

stb

V

O

V

OUT+

− V

OUT−

supply voltage 2.7 5 5.5 V
supply current BTL mode; VDD=5V;

standby current V
DC output voltage note 2 − 2.5 − V

 differential output offset

voltage

Mode select pin

V

MODE

I

MODE

α

mute

input voltage standby VDD− 0.5 − V

input current 0 < V
mute attenuation note 3 80 tbf − dB

Gain select pin

V

GAINSEL

I

GAINSEL

input voltage low gain (20 dB) 0 − 0.6 V

input current −−1µA

Headphone sense pin

V

I

HPS

HPS

input voltage SE mode; headphone

input current −−1µA

“SNW-FQ-611 part E”

= 0 V; total gain setting at 7 dB; according to Fig.4.; unless otherwise

MODE

, if this type is used as an audio amplifier.

− 14 20 mA

RL=∞; note 1
SE mode; V
BTL mode; V

=5V − 8.5 12 mA

DD

DD

= 3.3 V;

− 10 15 mA

RL= ∞; note 1
SE mode; V

MODE=VDD

= 3.3 V − 58mA

DD

− 110µA

GAINSEL = 0 V −−50 mV
GAINSEL = V

DD

−−150 mV

mute 1 − V
operating 0 − 0.5 V

MODE<VDD

−−1µA

high gain (30 dB) 4.1 − V

VDD− 1 − V

detected

DD

− 1.4 V

DD

DD

DD

V

V

V

1998 Jun 02 9

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital

TDA8552T; TDA8552TS

volume control and headphone sensing

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Volume control

t

W

t

rep

V

th(up)

V

float(max)

V

float(min)

V

th(down)

I

I(up/down)

t

wait

t

rep

Volume attenuator

G

v(l)

G

v(h)

N

step

∆G

v

Z

i

V

i(max)(rms)

pulse width 50 −−ns
pulse repetition time 100 −−ns
UP/DOWN pin UP threshold

4.1 − V

DD

level
UP/DOWN pin floating high

−−3.4 V

level
UP/DOWN pin floating low

1.0 −−V

level
UP/DOWN pin DOWN

0 − 0.6 V

threshold level
input current UP/DOWN pin 0 < V

UP/DOWN<VDD

−−200 µA
auto repeat wait time − 500 − ms
repeat time key pressed − 130 − ms

low gain; maximum volume

19 20 21 dB

(including power amplifier)
low gain; minimum volume

tbf −60 tbf dB

(including power amplifier)
high gain; maximum volume

29 30 31 dB

(including power amplifier)
high gain; minimum volume

tbf −50 tbf dB

(including power amplifier)
number of gain steps − 64 −
variation of gain per step − 1.25 − dB
input impedance 14 20 − kΩ
maximum input voltage

−−1.75 V
(RMS value)

V

Notes

1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal
to

2. The DC output voltage with respect to ground is approximately 0.5V

----------------------------------------------------------------



R

L

DD

.

DC output offset voltage



×

2

3. Output voltage in mute position is measured with an input of 1 V (RMS) in a bandwidth of 20 kHz, so including noise,
gain select pin is LOW (0 V).

1998 Jun 02 10

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital

TDA8552T; TDA8552TS

volume control and headphone sensing

AC CHARACTERISTICS (VDD= 3.3 V)

=25°C; RL=8Ω; f = 1 kHz; total gain setting at 7 dB; V

T

amb

(maximum gain = 20 dB); according to Fig.4.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

P

o

output power THD = 10%; RL=4Ω− 0.9 − W

THD = 10%; R
THD = 10%; R
THD = 0.5%; R
THD = 0.5%; R

THD = 0.5%; R
THD total harmonic distortion P
V

o(n)

noise output voltage note 2 − 60 −µV

SVRR supply voltage ripple

= 0.1 W; note 1 − 0.1 − %

o

note 3 tbf 55 − dB

rejection

V

i(max)

maximum input voltage THD = 1%;

Gv= −50 to 0 dB

α

sup

α

cs

channel suppression V

HPS=VDD

channel separation − 55 − dB

; note 4 − 80 − dB

= 0 V; gain select pin is at 0 V

MODE

=8Ω− 0.6 − W

L

=16Ω− 0.3 − W

L

=4Ω− 0.6 − W

L

=8Ω− 0.4 − W

L

=16Ω− 0.2 − W

L

−−1.1 V

Notes

1. Volume setting at maximum.

2. The noise output voltage is measured at the output in a frequency band from 20 Hz to 20 kHz (unweighted),
R

3. Supply voltage ripple rejection is measured at the output, with a source impedance of R

=0Ω, gain select pin is LOW (0 V).

source

=0Ω at the input.

source

The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS) is applied to the
positive supply rail, gain select pin is LOW (0 V).

4. Channel suppression is measured at the output with a source impedance of R

=0Ω at the input and a

source

frequency of 1 kHz. The output level in the operating single-ended channel (OUT+) is set at 2 V (RMS).

1998 Jun 02 11

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital

TDA8552T; TDA8552TS

volume control and headphone sensing

AC CHARACTERISTICS (VDD=5V)

=25°C; RL=8Ω; f = 1 kHz; total gain setting at 7 dB; V

T

amb

(maximum gain = 20 dB); according to Fig.4; package is SO20.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

P

o

output power THD = 10%; RL=8Ω 1.0 1.4 − W

THD = 10%; R
THD = 0.5%; R
THD = 0.5%; R

THD total harmonic distortion P

V

o(n)

noise output voltage GAINSEL. = 0 V; note 2 − 60 100 µV

= 0.1 W; note 1 − 0.15 0.4 %

o

P

= 0.5 W; note 1 − 0.1 0.3 %

o

GAINSEL. = V

SVRR supply voltage ripple

note 3 50 55 − dB

rejection

V

i(max)

a maximum input voltage THD = 1%;

Gv= −50 to 0 dB

α

sup

α

cs

channel suppression V

HPS=VDD

channel separation 50 −−dB

; note 4 70 80 − dB

= 0 V; Gain select pin is at 0 V

MODE

=16Ω− 0.8 − W

L

=8Ω 0.6 1.0 − W

L

=16Ω− 0.6 − W

L

; note 2 − 100 −µV

DD

−−1.75 V

Notes

1. Volume setting at maximum.

2. The noise output voltage is measured at the output in a frequency band from 20 Hz to 20 kHz (unweighted),

source

=0Ω.

=0Ω at the input.

source

R

3. Supply voltage ripple rejection is measured at the output, with a source impedance of R
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS) is applied to the
positive supply rail, gain select pin is LOW (0 V).

4. Channel suppression is measured at the output with a source impedance of R

=0Ω at the input and a

source

frequency of 1 kHz. The output level in the operating single-ended channel (OUT+) is set at 1 V (RMS).

1998 Jun 02 12

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital

TDA8552T; TDA8552TS

volume control and headphone sensing

AC CHARACTERISTICS (FOR HEADPHONE; RL=32Ω; CONNECTED SE)

=5V; T

V

DD

(maximum gain = 20 dB); according to Fig.4.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

P

o

THD total harmonic distortion P
V

o(n)

SVRR supply voltage ripple

V

i(max)

α

cs

Notes

1. The noise output voltage is measured at the output in a frequency band from 20 Hz to 20 kHz (unweighted),
R

source

2. Supply voltage ripple rejection is measured at the output, with a source impedance of R
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS) is applied to the
positive supply rail, gain select pin is LOW (0 V).

=25°C; f = 1 kHz; total gain setting at 20 dB; V

amb

output power THD = 10%; VDD= 3.3 V − 35 − mW

THD = 10%; V
THD = 0.5%; V
THD = 0.5%; V

=60mW − 0.04 − %

o

noise output voltage note 1 − 60 100 µV

note 2 50 55 − dB

rejection
maximum input voltage THD = 1%;

Gv= −50 to 0 dB

channel separation 50 −−dB

=0Ω, gain select pin is LOW (0 V).

= 0 V; gain select pin is 0 V

MODE

= 5.0 V − 90 − mW

DD

= 3.3 V − 25 − mW

DD

= 5.0 V − 60 − mW

DD

−−1.75 V

=0Ω at the input.

source

handbook, full pagewidth

t

V

DD

V

th(UP)

V

float(max)

V

UP/DOWN

V

float(min)

V

th(DOWN)

0

The rise time (tr) of the pulse may have any value.

r

t

rep

t

w

decreasing volume

t

Fig.3 Timing UP/DOWN pin.

1998 Jun 02 13

increasing volume

floating

t

r

t

rep

t

w

MGM611

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing

TEST AND APPLICATION INFORMATION

handbook, full pagewidth

C1

17

volume
control

volume
control

IN1

330 nF

V

IN1

V

DD

up

R5

2.2 kΩ

down

V

DD

up

down

C7

R6

2.2 kΩ

mute

100

nF

V

V

220 µF

330 nF

IN2

C8
100 nF

DD

standby

operating

UP/DOWN1

C3

SVR

C2

IN2

UP/DOWN2

MODE

HPS

6

16

15

7

5
4

VOLUME
CONTROL

20

kΩ

0.5V

DD

UP/DOWN
COUNTER

up down

INTERFACE

VOLUME
CONTROL

20

kΩ

0.5V

DD

UP/DOWN
COUNTER

up down

INTERFACE

STANDBY/MUTE

AND OPERATING

20 dB

30 dB

V

DD

15 kΩ

0.5V

15 kΩ

20 dB

V

DD

30 dB

15 kΩ

0.5V

15 kΩ

V

0.5V

DD

0.5V

DD

DD

V

DD1, 2

3, 8 13, 18

MASTER

15 kΩ

3.4 kΩ

1.6 kΩ

DD

0.5V

20 kΩ
20 kΩ

SLAVE

DD

TDA8552T

MASTER

15 kΩ

3.4 kΩ

1.6 kΩ

DD

0.5V

GAIN

SELECTION

20 kΩ
20 kΩ

SLAVE

DD

GAINSEL GND1 to GND4

TDA8552T; TDA8552TS

VDD = 5 V

V

DD3, 4

12

19

2

9

1, 10, 11, 2014

R3

100 kΩ

C3 C4

OUT1+

8 Ω

OUT1−

OUT2+

8 Ω

OUT2−

V

DD

R2
820 kΩ

100

nF

C5

220 µF

C6

220 µF

220 µF

R1
1 kΩ

headphone jack

tip

ring
sleeve

R4
1 kΩ

ground

MGM609

Fig.4 Test and application diagram.

1998 Jun 02 14

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing

Test conditions

T

=25°C if not specially mentioned; VDD=5V;

amb

f = 1 kHz, R
22 Hz to 22 kHz. The thermal resistance (in standard print,
without extra copper) = 110 K/W for the SSOP20; the
maximum sine wave power dissipation is:

150 25–

---------------------­110

For T

amb

150 60–

---------------------­110

Thermal design considerations

The ‘measured’ thermal resistance of the IC package is
highly dependent on the configuration and size of the
application board. All surface mount packages rely on the
traces of the PCB to conduct heat away from the package.
To improve the heat flow, a significant area on the PCB
must be attached to the (ground) pins. Data may not be
comparable between different semiconductor
manufacturers because the application boards and test
methods are not (yet) standardized. Also, the thermal
performance of packages for a specific application may be
different than presented here, because the configuration of
the application boards (copper area) may be different.
Philips Semiconductors uses FR-4 type application boards
with 1 oz copper traces with solder coating Solder Resist
Mask (SRM).

The SSOP20 package has improved thermal conductivity
which reduces the thermal resistance. Using a practical
PCB layout (see Fig.18) with wider copper tracks to the
corner pins and just under the IC, the thermal resistance
from junction to ambient can be reduced to approximately
80 K/W. For T

dissipation for this PCB layout is:

The thermal resistance for the SO20 is approximately
55 K/W if applied to a PCB with wider copper tracks to the
corner pins and just under the body of the IC.
The maximum total power dissipation for this practical
application is:

150 60–

----------------------

55

=8Ω, Gv= 20 dB, audio band-pass

L

1.14 W=

=60°C the maximum total power dissipation is:

0.82 W=

=60°C the maximum total power

amb

150 60–

---------------------­80

1.63 W=

1.12 W=

TDA8552T; TDA8552TS

BTL application

The BTL application diagram is illustrated in Fig.4.
The quiescent current has been measured without any

load impedance. The total harmonic distortion as a
function of frequency was measured with a low-pass filter
of 80 kHz. The value of capacitor C3 influences the
behaviour of the SVRR at low frequencies, increasing the
value of C3 increases the performance of the SVRR.

Headphone application

=25°C if not specially mentioned, VDD=5V,

T

amb

f = 1 kHz, RL=32Ω, Gv= 14 dB, audio band-pass
22 Hz to 22 kHz.

For headphone application diagram see: Fig.4
If a headphone is plugged into the headphone jack, the

HPS pin will switch-off the outputs of the SLAVE output
stage, this results in a mute attenuation >80 dB for the
loudspeakers. In this condition the quiescent current will
be reduced.

General remarks

Reduction of the value of capacitor C3 results in a
decrease of the SVRR performance at low frequencies.

The capacitor value of C5 and C6 in combination with the
load impedance of the headphone determines the low
frequency behaviour.

To prevent against high output currents during inserting
the headphone into the headphone jack, resistors of 5.1 Ω
have to be connected in series with the SE output lines.

The UP/DOWN pin can be driven by a 3-state logic output
stage (microprocessor) without extra external
components. If the UP/DOWN pin is driven by
push-buttons, then it is advised to have an RC-filter
between the buttons and the UP/DOWN pin. Advised
values for the RC-filter are 2.2 kΩ and 100 nF. Resistor R4
is not necessary for basic operation, but is advised to
keep C6 charged to a voltage of 0.5VDD This has the
advantage that the plop noise when inserting the
headphone plug is minimal. If the headphone sense
function (HPS) is not used then the HPS-pin 4 should be
hard-wired to ground. This pin should never be left
unconnected.

Using double push buttons, the volume step for both
channels can be controlled. When for the balance control
only a single contact is used, the balance steps are

1.25 dB. If double contacts are used for the balance
buttons and the dashed connection is made, then the
balance steps are 2.5 dB.

1998 Jun 02 15

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital

TDA8552T; TDA8552TS

volume control and headphone sensing

Application without volume control

If pins 6, 7 and 8 are hardwired together the device operates with the volume control setting at maximum.
When the supply voltage is connected and the device is switched from standby to mute or operating for the first time then

the gain is ramped up from −20 dB to +20 dB. This takes approximately 5 s.
This maximum gain setting is maintained until the supply voltage drops below the minimum value.

V

V

DD

DD

balance left

volume

down

up

2.2 kΩ

UP/DOWN1

100 nF

6

TDA8552T

2.2 kΩ

UP/DOWN2

100 nF

7

MGM612

handbook, full pagewidth

V

DD

balance right

Fig.5 Volume and balance control using buttons.

1998 Jun 02 16

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing

5

MGR005

VDD (V)

20

handbook, halfpage

I

DD

(mA)

15

10

5

0

234 6

RL= ∞.

40

handbook, halfpage

G

(dB)

20

0

−20

−40

−60

02040 80

VDD= 5V; RL=8Ω.
(1) Gv= 30dB (max.).
(2) Gv= 20dB (max.).

TDA8552T; TDA8552TS

MGR006

(1)

(2)

60

volume steps

Fig.6 IDD as a function of VDD.

10

handbook, halfpage

THD

(%)

1

(1)

(2)

−1

10

−2

10

−2

10

VDD= 5V; RL=8Ω; f = 1kHz; Gv= 20dB (max.).
(1) Gv= 0dB.
(2) Gv= 7dB.
(3) Gv=20dB.

(3)

−1

10

MGR007

110

Po (W)

Fig.7 Gain as a function of volume steps.

10

handbook, halfpage

THD

(%)

1

(1)
(2)

(3)

−1

10

−2

10

−2

10

VDD= 5V; RL=8Ω; f = 1kHz; Gv= 30dB (max.).
(1) Gv= 0dB.
(2) Gv= 7dB.
(3) Gv=20dB.
(4) Gv=30dB.

−1

10

(4)

MGR008

110

Po (W)

Fig.8 THD as a function of Po.

1998 Jun 02 17

Fig.9 THD as a function of Po.

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing

10

handbook, halfpage

THD

(%)

1

−1

10

−2

10

−2

10

(1)

(2)

(3)

−1

10

VDD= 5V; RL=8Ω; Gv= 20dB (max.).
(1) f = 10 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.

110

MGR009

Po (W)

TDA8552T; TDA8552TS

10

handbook, halfpage

THD

(%)

1

−1

10

−2

10

−2

10

VDD= 5 V; RL=8Ω; Gv= 30 dB (max.).
(1) f = 10 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.

(1)

(2)

(3)

−1

10

MGR010

110

Po (W)

Fig.10 THD as a function of Po.

10

handbook, halfpage

THD

(%)

1

(1)

−1

10

−2

10

10 10

VDD= 5 V; RL=8Ω; Po= 0.1 W; Gv= 20 dB (max.).
(1) Gv= 0 dB.
(2) Gv= 7 dB.
(3) Gv=20dB.

(2)

(3)

2

3

10

Fig.11 THD as a function of Po.

MGR011

10

handbook, halfpage

THD

(%)

1

(1)

(2)

−1

10

−2

4

10

f (Hz)

5

10

10

10 10

(3)

2

3

10

VDD= 5 V; RL=8Ω; Po= 0.1 W; Gv= 30 dB (max.).
(1) Gv= 0 dB.
(2) Gv= 7 dB.
(3) Gv=30dB.

MGR012

4

10

f (Hz)

5

10

Fig.12 THD as a function of frequency.

1998 Jun 02 18

Fig.13 THD as a function of frequency.

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing

MGR013

4

10

f (Hz)

5

10

SVRR

0

(1)

handbook, halfpage

(dB)

(2)

−20

(3)

(4)

−40

(5)

(6)

−60

−80

10 10

VDD= 5 V; RL=8Ω; V
(1) C3 = 10 µF; Gv=20dB.
(2) C3 = 10 µF; Gv= 7 dB.
(3) C3 = 100 µF; Gv= 20 dB.
(4) C3 = 10 µF; Gv=10dB.
(5) C3 = 100 µF; Gv= 7 dB.
(6) C3 = 100 µF; Gv= 10 dB.

2

= 100 mV.

ref

3

10

TDA8552T; TDA8552TS

2.4

handbook, halfpage

V

i

(V)

2

1.6

1.2

0.8

0.4

0

−50 −30 −10

VDD= 5 V; RL=8Ω; f = 1 kHz; THD = 1%.
(1) Gv= 20 dB (max.).
(2) Gv= 30 dB (max.).

MGR014

(1)
(2)

G (dB)

30

100

Fig.14 SVRR as a function of frequency.

handbook, halfpage

0

α

sup

(dB)

−20

−40

−60

−80

−100

10

VP= 5 V; Vo= 1 V; V
(1) Channel 1.
(2) Channel 2.

2

10

HPS=VP

Fig.15 Input voltage as a function of gain.

MGL436

handbook, halfpage

α

(dB)

0

cs

−20

−40

−60

(1)
(2)

3

10

4

10

f (Hz)

5

10

.

−80

−100

10

VP= 5 V; Vo=1V.

2

10

(1)
(2)

3

10

(1) Gv=30dB.
(2) Gv=20dB.

MGL435

4

10

f (Hz)

5

10

Fig.16 Channel suppression as a function of

frequency.

1998 Jun 02 19

Fig.17 Channel separation as a function of

frequency.

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing

handbook, full pagewidth

TDA8552T; TDA8552TS

77

79

top view

IN1

330 nF

330 nF

IN2

20 dB
30 dB

TDA

8552/53TS

Analog Audio

CIC – Nijmegen

220 µF

100 nF

MODE

20 1

150 nF

220 µF

TDA8552/53TS

1 kΩ

− OUT1 +− OUT2 +

+VddGND

100 kΩ

220 µF

220 µF

820

kΩ

1.5 kΩ

5 Ω

bottom view

1.5 kΩ

UP

DOWN

HP

5 Ω

1 kΩ

MGR015

Fig.18 Printed-circuit board layout.

1998 Jun 02 20

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing

PACKAGE OUTLINES

SO20: plastic small outline package; 20 leads; body width 7.5 mm

D

c

y

Z

20

11

TDA8552T; TDA8552TS

SOT163-1

E

H

E

A

X

v M

A

pin 1 index

1

e

0 5 10 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

A

max.

2.65

0.10

A

0.30

0.10

0.012

0.004

1

A2A

2.45

2.25

0.096

0.089

0.25

0.01

b

0.49

0.36

p

cD

0.32

0.23

0.013

0.009

3

0.019

0.014

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

10

w M

b

p

scale

(1)E(1) (1)

13.0

12.6

0.51

0.49

eHELLpQ

7.6

1.27

7.4

0.30

0.050

0.29

10.65

10.00

0.419

0.394

Q

A

2

A

1

1.4

0.055

1.1

0.4

0.043

0.016

detail X

1.1

1.0

0.043

0.039

(A )

L

p

L

0.25

0.01

A

3

θ

0.25 0.1

0.01

ywv θ

Z

0.9

0.4

8

0.004

0.035

0.016

0

o
o

OUTLINE
VERSION

SOT163-1

IEC JEDEC EIAJ

075E04 MS-013AC

REFERENCES

1998 Jun 02 21

EUROPEAN

PROJECTION

ISSUE DATE

95-01-24
97-05-22

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing

SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm

20

D

c

y

Z

11

E

H

E

TDA8552T; TDA8552TS

SOT266-1

A

X

v M

A

pin 1 index

110

w M

b

e

DIMENSIONS (mm are the original dimensions)

mm

A

max.

1.5

0.1501.4

1.2

0.25

b

3

p

0.32

0.20

UNIT A1A2A

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

p

0 2.5 5 mm

cD

0.20

6.6

0.13

6.4

(1)E(1)

4.5

4.3

scale

eHELLpQZywv θ

0.65 1.0 0.2

6.6

6.2

Q

A

2

A

1

detail X

0.65

0.75

0.45

0.45

(A )

L

p

L

A

3

θ

0.13 0.1

0.48

0.18

(1)

o

10

o

0

OUTLINE

VERSION

SOT266-1

IEC JEDEC EIAJ

REFERENCES

1998 Jun 02 22

EUROPEAN

PROJECTION

ISSUE DATE

90-04-05
95-02-25

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

Reflow soldering

Reflow soldering techniques are suitable for all SO and
SSOP packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

(order code 9398 652 90011).

TDA8552T; TDA8552TS

SSOP
Wave soldering is not recommended for SSOP packages.

This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The longitudinal axis of the package footprint must

be parallel to the solder flow and must incorporate
solder thieves at the downstream end.

Even with these conditions, only consider wave
soldering SSOP packages that have a body width of

4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).

METHOD (SO AND SSOP)
During placement and before soldering, the package must

be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal

of corrosive residues in most applications.
SO
Wave soldering techniques can be used for all SO

packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be

parallel to the solder flow.

• The package footprint must incorporate solder thieves at

the downstream end.

1998 Jun 02 23

Repairing soldered joints

Fix the component by first soldering two diagonally-

opposite end leads. Use only a low voltage soldering iron

(less than 24 V) applied to the flat part of the lead. Contact

time must be limited to 10 seconds at up to 300 °C. When

using a dedicated tool, all other leads can be soldered in

one operation within 2 to 5 seconds between

270 and 320 °C.

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital

TDA8552T; TDA8552TS

volume control and headphone sensing

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Jun 02 24

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing

NOTES

TDA8552T; TDA8552TS

1998 Jun 02 25

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing

NOTES

TDA8552T; TDA8552TS

1998 Jun 02 26

Philips Semiconductors Preliminary specification

2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing

NOTES

TDA8552T; TDA8552TS

1998 Jun 02 27

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. [phone],

Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. [phone], Fax. [phone]

Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. [phone], Fax. [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]

Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore

Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,

Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,

Tel. [phone], Fax. [phone]

Portugal: see Spain

Romania: see Italy

Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]

Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria

Slovenia: see Italy

South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,

Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,

04547-130 SÃO PAULO, SP, Brazil,

Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,

Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,

Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,

TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,

Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,

252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,

MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,

Tel. [phone]

Uruguay: see South America

Vietnam: see Singapore

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1998 SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 545102/1200/02/pp28 Date of release: 1998 Jun 02 Document order number: 9397 750 03733