Datasheet TDA8547T Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TDA8547

2 × 1 W BTL audio amplifier with
output channel switching

Preliminary specification
File under Integrated Circuits, IC01

1997 Oct 07

Philips Semiconductors Preliminary specification

2 × 1 W BTL audio amplifier with output
channel switching

FEATURES

• Selection between output channels

• Flexibility in use

• Few external components

• Low saturation voltage of output stage

• Gain can be fixed with external resistors

• Standby mode controlled by CMOS compatible levels

• Low standby current

• No switch-on/switch-off plops

• High supply voltage ripple rejection

• Protected against electrostatic discharge

• Outputs short-circuit safe to ground, V

load

• Thermally protected.

and across the

CC

TDA8547

APPLICATIONS

• Telecommunication equipment

• Portable consumer products

• Personal computers

• Motor-driver (servo).

GENERAL DESCRIPTION

The TDA8547(T) is a two channel audio power amplifier
for an output power of 2 × 1 W with an 8 Ω load at a 5 V
supply. The circuit contains two BTL amplifiers with a
complementary PNP-NPN output stage and standby/mute
logic. The operating condition of all channels of the device
(standby, mute or on) is externally controlled by the
MODE pin. With the SELECT pin one of the output
channels can be switched in the standby condition. This
feature can be used for loudspeaker selection and also
reduces the quiescent current consumption.
The TDA8547T comes in a SO16 package and the
TDA8547 in a DIP16 package.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CC

I

q

I

stb

P

o

THD total harmonic distortion P

supply voltage 2.2 5 18 V
quiescent current VCC= 5 V; 2 channels − 15 22 mA

V

= 5 V; 1 channel − 812mA

CC

standby current −−10 µA
output power THD = 10%; RL=8Ω; VCC=5V 1 −−W

= 0.5 W − 0.15 − %

o

SVRR supply voltage ripple rejection 50 −−dB

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

TDA8547T SO16 plastic small outline package; 16 leads; body width 7.5 mm SOT162-1
TDA8547 DIP16 plastic dual in-line package; 16 leads (300 mil); long body SOT38-1

1997 Oct 07 2

Philips Semiconductors Preliminary specification

2 × 1 W BTL audio amplifier with output
channel switching

BLOCK DIAGRAM

handbook, full pagewidth

V

−

−
+

CC1

20 kΩ

IN1−
IN1+

14
13

TDA8547

V

V

CC1

CC2

9

16

15

OUT1−

R

R

−

−
+

2

OUT1+

IN2−
IN2+

SVRR

MODE

SELECT

20 kΩ

STANDBY/MUTE LOGIC

R

TDA8547

R

−

−
+

GND1

10

7

18

GND2

OUT2−

OUT2+

MGK697

11
12

4

3
5

−
+

V

CC2

20 kΩ

20 kΩ

STANDBY/MUTE LOGIC

−

Fig.1 Block diagram.

1997 Oct 07 3

Philips Semiconductors Preliminary specification

2 × 1 W BTL audio amplifier with output
channel switching

PINNING

SYMBOL PIN DESCRIPTION

GND1 1 ground, channel 1
OUT1+ 2 positive loudspeaker terminal,

channel 1

MODE 3 operating mode select (standby,

mute, operating)

SVRR 4 half supply voltage, decoupling

ripple rejection

SELECT 5 input for selection of operating

channel
n.c. 6 not connected
OUT2+ 7 positive loudspeaker terminal,

channel 2
GND2 8 ground, channel 2
V

CC2

OUT2− 10 negative loudspeaker terminal,

IN2− 11 negative input, channel 2
IN2+ 12 positive input, channel 2
IN1+ 13 positive input, channel 1
IN1− 14 negative input, channel 1
OUT1− 15 negative loudspeaker terminal,

V

CC1

9 supply voltage, channel 2

channel 2

channel 1

16 supply voltage, channel 1

handbook, halfpage

GND1

1

OUT1+

SELECT

OUT2+

MODE

SVRR

n.c.

GND2

2
3
4
5
6
7
8

TDA8547

MGK696

Fig.2 Pin configuration.

TDA8547

16

V

CC1

15

OUT1−

14

IN1−

13

IN1+

12

IN2+

11

IN2−

10

OUT2−

9

V

CC2

FUNCTIONAL DESCRIPTION

The TDA8547(T) is a 2 × 1 W BTL audio power amplifier
capable of delivering 2 × 1 W output power to an 8 Ω load
at THD = 10% using a 5 V power supply. Using the
MODE pin the device can be switched to standby and
mute condition. The device is protected by an internal
thermal shutdown protection mechanism. The gain can be
set within a range from 6 to 30 dB by external feedback
resistors.

Power amplifier

The power amplifier is a Bridge-Tied Load (BTL) amplifier
with a complementary PNP-NPN output stage.
The voltage loss on the positive supply line is the
saturation voltage of a PNP power transistor, on the
negative side the saturation voltage of a NPN power
transistor. The total voltage loss is <1 V and with a 5 V
supply voltage and an 8 Ω loudspeaker an output power of
1 W can be delivered.

1997 Oct 07 4

MODE pin

The whole device (both channels) is in the standby mode
(with a very low current consumption) if the voltage at the
MODE pin is >(VCC− 0.5 V), or if this pin is floating. At a
MODE voltage level of less than 0.5 V the amplifier is fully
operational. In the range between 1.5 V and VCC− 1.5 V
the amplifier is in mute condition. The mute condition is
useful to suppress plop noise at the output caused by
charging of the input capacitor.

SELECT pin

If the voltage at the SELECT pin is in the range between

1.5 V and V

− 1.5 V, or if it is kept floating, then both

CC

channels can be operational. If the SELECT pin is set to a
LOW voltage or grounded, then only channel 2 can
operate and the power amplifier of channel 1 will be in the
standby mode. In this case only the loudspeaker at
channel 2 can operate and the loudspeaker at channel 1
will be switched off. If the SELECT pin is set to a
HIGH level or connected to VCC, then only channel 1 can

Philips Semiconductors Preliminary specification

2 × 1 W BTL audio amplifier with output
channel switching

operate and the power amplifier of channel 2 will be in the
standby mode. In this case only the loudspeaker at
channel 1 can operate and the loudspeaker at channel 2
will be switched off. Setting the SELECT pin to a LOW or
a HIGH voltage results in a reduction of quiescent current
consumption by a factor of approximately 2.

Switching with the SELECT pin during operating is not
plop-free, because the input capacitor of the channel
which is coming out of standby needs to be charged first.

Table 1 Control pins MODE and SELECT versus status of output channels
Voltage levels at control pins at V

= 5 V; for other supply voltages see Figs. 14 and 15.

P

CONTROL PIN STATUS OF OUTPUT CHANNEL

MODE SELECT CHANNEL 1 CHANNEL 2

(1)

HIGH

HVP
HVP
HVP

HVP

LOW

(4)

/LOW

(4)

/LOW

(4)

/LOW

/NC

(4)

(5)

(2)

(5)
(5)
(5)

HVP
HVP

HIGH

HVP

X

(4)
(4)

(4)

LOW

(3)

/NC
/NC

(1)

/NC

(5)

For plop-free channel selecting the device has first to be
set in mute condition with the MODE pin (between 1.5 V
and VCC− 1.5 V), then set the SELECT pin to the new
level, after a delay set the MODE pin to a LOW level.
The delay needed depends on the values of the input
capacitor and the feedback resistors. Time needed is
approx. 10 × C1 × (R1 + R2), so approximately 0.6 s. for
the values in Fig.4.

standby standby 0

(2)
(2)

mute/on standby 8

(2)

mute/on mute/on 15
standby mute/on 8

TDA8547

TYP. I

(mA)

mute mute 15

on on 15

q

Notes

1. HIGH = V

pin>VCC

− 0.5 V.

2. NC = not connected or floating.

3. X = don’t care.

4. HVP = 1.5 V < V

5. LOW = V

pin

< 0.5 V.

pin<VCC

− 1.5 V.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

V

I

I

ORM

T

stg

T

amb

V

Psc

P

tot

supply voltage operating −0.3 +18 V
input voltage −0.3 VCC+ 0.3 V
repetitive peak output current − 1A
storage temperature −55 +150 °C
operating ambient temperature −40 +85 °C
AC and DC short-circuit safe voltage − 10 V
total power dissipation SO16 − 1.2 W

DIP16 − 2.2 W

QUALITY SPECIFICATION

In accordance with

Handbook”

. The handbook can be ordered using the code 9397 750 00192.

“SNW-FQ-611-E”

. The number of the quality specification can be found in the

1997 Oct 07 5

“Quality Reference

Philips Semiconductors Preliminary specification

2 × 1 W BTL audio amplifier with output

TDA8547

channel switching

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient in free air

TDA8547T (SO16) 100 K/W
TDA8547 (DIP16) 55 K/W

2.5

handbook, halfpage

P

(W)

2.0

1.5

1.0

DIP16

SO16

MGK698

0.5

0

0 40 80 160

120

T

amb

(°C)

Fig.3 Power derating curve.

Table 2 Maximum ambient temperature at different conditions

CONTINUOUS SINE WAVE DRIVEN

V

(V)

CC

R

(Ω)

L

APPLICATION

OPERATION

MODE

P

(W)

o

(1)

P

max

T

amb(max)

(°C)

(W)

SO16 DIP16

5 8 2 channels BTL 2 × 1.2 1.4 − 73
5 8 1 channel BTL 1.2 0.7 80 112

7.5 8 2 channels BTL 2 × 2.4 3.0 −−

7.5 8 1 channel BTL 2.4 1.5 − 68

7.5 16 2 channels BTL 2 × 1.2 1.8 − 50

7.5 16 1 channel BTL 1.2 0.9 60 100

7.5 28 2 channels BTL 2 × 1 1.0 50 95

7.5 28 1 channel BTL 1 0.5 100 122

Note

1. At THD = 10%.

1997 Oct 07 6

Philips Semiconductors Preliminary specification

2 × 1 W BTL audio amplifier with output

TDA8547

channel switching

DC CHARACTERISTICS

V

=5V; T

CC

otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CC

I

q

I

stb

V

O

OUT+

, I

IN−

MODE

SELECT

− V

V

I

IN+

V

I

MODE

V

I

SELECT

=25°C; RL=8Ω; V

amb

supply voltage operating 2.2 5 18 V
quiescent current BTL 2 channels;

standby current V
DC output voltage note 2 − 2.2 − V

 differential output voltage

OUT−

offset
input bias current −−500 nA
input voltage MODE pin operating 0 − 0.5 V

input current MODE pin 0 V < V
input voltage SELECT pin channel 1 = standby;

input current SELECT pin V

= 0 V; gain = 20 dB; measured in BTL application circuit Fig.4; unless

MODE

− 15 22 mA

note 1
BTL 1 channel;

− 812mA

note 1

MODE=VCC

−−10 µA

−−50 mV

mute 1.5 − V
standby V

MODE<VCC

− 0.5 − V

CC

−−20 µA

CC
CC

0 − 1V

channel 2 = on
channel 1 = on;

V

− 1 − V

CC

CC

channel 2 = standby

=0V −−100 µA

SELECT

− 1.5 V
V

V

Notes

1. Measured with R

= ∞. With a load connected at the outputs the quiescent current will increase, the maximum of this

L

increase being equal to the DC output offset voltage divided by RL.

2. The DC output voltage with respect to ground is approximately 0.5VCC.

1997 Oct 07 7

Philips Semiconductors Preliminary specification

2 × 1 W BTL audio amplifier with output

TDA8547

channel switching

AC CHARACTERISTICS

V

=5V; T

CC

unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

P

o

THD total harmonic distortion Po= 0.5 W − 0.15 0.3 %
G

v

Z

i

V

no

SVRR supply voltage ripple rejection note 3 50 −−dB

V

o

α

cs

Notes

1. Gain of the amplifier is in BTL application circuit Fig.4.

2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a
source impedance of R

3. Supply voltage ripple rejection is measured at the output, with a source impedance of RS=0Ω at the input.
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to
the positive supply rail.

4. Supply voltage ripple rejection is measured at the output, with a source impedance of RS=0Ω at the input.
The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS),
which is applied to the positive supply rail.

5. Output voltage in mute position is measured with a 1 V (RMS) input voltage in a bandwidth of 20 Hz to 20 kHz,
so including noise.

6. Channel separation is measured at the output with a source impedance of RS=0Ω at the input and a frequency of
1 kHz. The output power in the operating channel is set to 0.5 W.

=25°C; RL=8Ω; f = 1 kHz; V

amb

= 0 V; gain = 20 dB; measured in BTL application circuit Fig.4;

MODE

output power THD = 10% 1 1.2 − W

THD = 0.5% 0.6 0.9 − W

closed loop voltage gain note 1 6 − 30 dB
differential input impedance − 100 − kΩ
noise output voltage note 2 −−100 µV

note 4 40 −−dB
output voltage note 5 −−200 µV
channel separation V

R2

×

2

------- ­R1

=0Ω at the input.

S

= 0.5VCC; note 6 40 −−dB

SELECT

1997 Oct 07 8

Philips Semiconductors Preliminary specification

2 × 1 W BTL audio amplifier with output
channel switching

TEST AND APPLICATION INFORMATION
Test conditions

Because the application can be either Bridge-Tied Load
(BTL) or Single-Ended (SE), the curves of each
application are shown separately.

The thermal resistance = 55 K/W for the DIP16; the
maximum sine wave power dissipation for T

150 25–

is:

----------------------

For T

amb

150 60–

---------------------­55

55

2.3 W=

=60°C the maximum total power dissipation is:

1.7 W=

BTL application

=25°C if not specially mentioned, VCC=5V,

T

amb

f = 1 kHz, RL=8Ω, Gv= 20 dB, audio band-pass
22 Hz to 22 kHz.

The BTL application circuit is illustrated in Fig.4.
The quiescent current has been measured without any

load impedance and both channels driven. When one
channel is active the quiescent current will be halved.
The total harmonic distortion as a function of frequency
was measured using a low-pass filter of 80 kHz.
The value of capacitor C3 influences the behaviour of the
SVRR at low frequencies: increasing the value of C3
increases the performance of the SVRR.
The figure of the MODE voltage (V

) as a function of

MODE

the supply voltage shows three areas; operating, mute
and standby. It shows, that the DC-switching levels of the
mute and standby respectively depend on the supply
voltage level. The figure of the SELECT voltage (V
as a function of the supply voltage shows the voltage
levels for switching the channels in the active, mute or
standby mode.

amb

=25°C

SELECT

TDA8547

SE application

=25°C if not specially mentioned, VCC= 7.5 V,

T

amb

f = 1 kHz, RL=4Ω, Gv= 20 dB, audio band-pass
22 Hz to 22 kHz.

The SE application circuit is illustrated in Fig.16.
Increasing the value of electrolytic capacitor C3 will result

in a better channel separation. Because the positive
output is not designed for high output current (2 × Io) at
low load impedance (≤16 Ω), the SE application with
output capacitors connected to ground is advised.
The capacitor value of C6/C7 in combination with the load
impedance determines the low frequency behaviour.
The THD as a function of frequency was measured using
a low-pass filter of 80 kHz. The value of capacitor C3
influences the behaviour of the SVRR at low frequencies:
increasing the value of C3 increases the performance of
the SVRR.

General remark

The frequency characteristic can be adapted by
connecting a small capacitor across the feedback
resistor. To improve the immunity to HF radiation in radio
circuit applications, a small capacitor can be connected in
parallel with the feedback resistor (56 kΩ); this creates a
low-pass filter.

)

1997 Oct 07 9

Philips Semiconductors Preliminary specification

2 × 1 W BTL audio amplifier with output
channel switching

BTL APPLICATION

handbook, full pagewidth

Gain channel1 2

Gain channel 2 2

C1

R2

R1

R3

R4

50 kΩ

C3

47 µF

50 kΩ

OUT2−

IN1−
IN1+

IN2−
IN2+

SVRR

MODE

SELECT

14
13

11
12

4
3
5

1 µF

10 kΩ

V

i1

C2

1 µF

10 kΩ

V

i2

R2

×=

------- ­R1

R4

×=

------- ­R3

16 9

15

2

TDA8547

10

7

18

GND

OUT1−

OUT1+

OUT2−

OUT2+

MGK701

C4

100 nF

TDA8547

V

CC

C5
100 µF

R

L1

R

L2

30

handbook, halfpage

I

q

(mA)

20

10

0

0

RL= ∞.

Fig.4 BTL application.

MGD890

420

81216

VCC (V)

10

handbook, halfpage

THD

(%)

1

−1

10

−2

10

−2

10

f = 1 kHz; Gv=20dB.
(1) VCC= 5 V; RL=8Ω.
(2) VCC= 9 V; RL=16Ω.

MGD891

(2)

(1)

−1

10

1

Po (W)

10

Fig.5 Iq as a function of VCC.

1997 Oct 07 10

Fig.6 THD as a function of Po.

Philips Semiconductors Preliminary specification

2 × 1 W BTL audio amplifier with output
channel switching

10

handbook, halfpage

THD

(%)

1

−1

10

−2

10

10 10

Po= 0.5 W; Gv= 20 dB.
(1) VCC= 5 V; RL=8Ω.
(2) VCC= 9 V; RL=16Ω.

Fig.7 THD as a function of frequency.

(1)

(2)

2

3

10

MGD892

f (Hz)

5

10

4

10

−60

handbook, halfpage

α

cs

(dB)

−70

−80

−90

−100

10 10

VCC= 5 V; Vo= 2 V; RL=8Ω.
(1) Gv=30dB.
(2) Gv=20dB.
(3) Gv= 6 dB.

2

3

10

4

10

Fig.8 Channel separation as a function of

frequency.

TDA8547

MGK699

(1)

(2)

(3)

5

10

f (Hz)

−20

handbook, halfpage

SVRR

(dB)

−40

−60

−80

10 10

VCC= 5 V; RS=0Ω; Vr= 100 mV.
(1) Gv=30dB.
(2) Gv=20dB.
(3) Gv= 6 dB.

2

10

(1)

(2)

(3)

3

MGD894

4

10

f (Hz)

5

10

Fig.9 SVRR as a function of frequency.

1997 Oct 07 11

2.5

handbook, halfpage

P

o

(W)

2

1.5

1

0.5

0

048

THD = 10%.
(1) RL=8Ω.

(2) RL=16Ω.

(1) (2)

VCC (V)

Fig.10 Po as a function of VCC.

MGD895

12

Philips Semiconductors Preliminary specification

2 × 1 W BTL audio amplifier with output
channel switching

handbook, halfpage

3

P

(W)

2

1

0

0

(1) RL=8Ω.
(2) RL=16Ω.

(1) (2)

4812

MGD896

VCC (V)

handbook, halfpage

3

P

(W)

2

1

0

0

Sine wave of 1 kHz.
(1) VCC= 9 V; RL=16Ω.
(2) VCC= 5 V; RL=8Ω.

(1)

(2)

0.5 2.51 1.5 2

TDA8547

MGD897

Po (W)

Fig.11 Worst case power dissipation as a function

of VCC (both channels on).

V

MODE

MGL211

(V)

10

handbook, halfpage

V

o

(V)

1

−1

10

−2

10

−3

10

−4

10

−5

10

−6

10

−1

10

Band-pass = 22 Hz to 22 kHz.
(1) VCC=3V.
(2) VCC=5V.
(3) VCC=12V.

(1) (2) (3)

1

10 10

Fig.12 Power dissipation as a function of Po (both

channels on).

mute

12

MGL210

operating

VP (V)

16

16

handbook, halfpage

V

MODE

(V)

12

8

4

2

0

048

standby

Fig.13 Vo as a function of V

MODE

.

1997 Oct 07 12

Fig.14 V

as a function of VP.

MODE

Philips Semiconductors Preliminary specification

2 × 1 W BTL audio amplifier with output
channel switching

20

handbook, full pagewidth

V

SELECT

(V)

16

12

8

4

0

02468 12141618

V

P

channel 1

on

channel 1

standby

10

channel 2

standby

channel 2

on

TDA8547

channel 1 + 2

on

VP (V)

MGK700

20

SE APPLICATION

handbook, full pagewidth

Gain channel 1

Gain channel 2

=

=

R2

------- ­R1

R4

------- ­R3

C1

1 µF

V

C2

1 µF

V

i1

i2

R1

10 kΩ

R3

10 kΩ

R2

R4

100 kΩ

C3

47 µF

100 kΩ

OUT2−

Fig.15 V

IN1−
IN1+

IN2−
IN2+

SVRR

MODE

SELECT

as a function of VP.

SELECT

16 9

14
13

TDA8547

11
12

4
3
5

18

GND

V

R

L1

R

L2

C5
100 µF

CC

C4

100 nF

OUT1−

15

OUT1+

2

OUT2−

10

OUT2+

7

MGK702

C6

470 µF

C7

470 µF

Fig.16 SE application.

1997 Oct 07 13

Philips Semiconductors Preliminary specification

2 × 1 W BTL audio amplifier with output
channel switching

Po (W)

MGD899

10

10

handbook, halfpage

THD

(%)

1

−1

10

−2

10

−2

10

f = 1 kHz; Gv=20dB.
(1) VCC= 7.5 V; RL=4Ω.
(2) VCC= 9 V; RL=8Ω.
(3) VCC= 12 V; RL=16Ω.

(1)
(2)
(3)

−1

10

1

10

handbook, halfpage

THD

(%)

1

−1

10

−2

10

10 10

Po= 0.5 W; Gv= 20 dB.
(1) VCC= 7.5 V; RL=4Ω.
(2) VCC= 9 V; RL=8Ω.

(3) VCC= 12 V; RL=16Ω.

TDA8547

MGD900

(1)

(2)
(3)

2

3

10

4

10

f (Hz)

5

10

Fig.17 THD as a function of Po.

−20

handbook, halfpage

α

cs

(dB)

−40

−60

(1)
(2)

−80

−100

10

2

10

(3)
(4)

3

10

4

10

Vo= 1 V; Gv=20dB.
(1) VCC= 7.5 V; RL=4Ω.
(2) VCC= 9 V; RL=8Ω.
(3) VCC= 12 V; RL=16Ω.
(4) VCC= 5 V; RL=32Ω.

Fig.19 Channel separation as a function of

frequency.

MGL244

f (Hz)

Fig.18 THD as a function of frequency.

−20

handbook, halfpage

SVRR

(dB)

−40

(1)
(2)

−60

(3)

5

10

−80
10 10

2

3

10

VCC= 7.5 V; RL=4Ω; RS=0Ω; Vr= 100 mV.

(1) Gv=24dB.

(2) Gv=20dB.
(3) Gv= 0 dB.

MGD902

4

10

f (Hz)

5

10

Fig.20 SVRR as a function of frequency.

1997 Oct 07 14

Philips Semiconductors Preliminary specification

2 × 1 W BTL audio amplifier with output
channel switching

12

MGD903

VCC (V)

16

handbook, halfpage

2

P

o

(W)

1.6

1.2

0.8

0.4

0

0

THD = 10%.
(1) RL=4Ω.
(2) RL=8Ω.
(3) RL=16Ω.

(1) (2) (3)

48

Fig.21 Po as a function of VCC.

TDA8547

handbook, halfpage

3

P

(W)

2

1

0

0

(1) RL=4Ω.
(2) RL=8Ω.
(3) RL=16Ω.

(1) (2) (3)

48

Fig.22 Worst case power dissipation as a function

of VCC (both channels on).

MGD904

VCC (V)

1612

1.2

MGD905

Po (W)

2.4

handbook, halfpage

P

(W)

1.6

0.8

0

0

Sine wave of 1 kHz.
(1) VCC= 12 V; RL=16Ω.
(2) VCC= 7.5 V; RL=4Ω.
(3) VCC= 9 V; RL=8Ω.

(1)

(2)
(3)

0.4 0.8 1.6

Fig.23 Power dissipation as a function of Po (both

channels on).

1997 Oct 07 15

Philips Semiconductors Preliminary specification

2 × 1 W BTL audio amplifier with output
channel switching

handbook, full pagewidth

TDA8547

MODE

12 kΩ

TDA

8547

SELECT

+

OUT2

a. Top view without components.

+

100 µF

100 nF

V

CC

D&A AUDIO POWER

−

OUT1

56 kΩ

16

11 kΩ

11 kΩ

9

56 kΩ

12 kΩ

P3

12 kΩ

+

OUT1

47 µF

GND

12
kΩ

1

8

TDA8547

b. Top view with components.

CIC NIJMEGEN

1 µF

1 µF

−

OUT2

IN1

IN2

MGK703

Fig.24 Printed-circuit board layout (BTL and SE).

1997 Oct 07 16

Philips Semiconductors Preliminary specification

2 × 1 W BTL audio amplifier with output
channel switching

PACKAGE OUTLINES

SO16: plastic small outline package; 16 leads; body width 7.5 mm

D

c

y

Z

16

9

TDA8547

SOT162-1

E

H

E

A

X

v M

A

pin 1 index

1

e

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

A

max.

2.65

0.10

A

1

0.30

0.10

0.012

0.004

A

2

2.45

2.25

0.096

0.089

A

0.25

0.01

b

3

p

0.49

0.32

0.36

0.23

0.019

0.013

0.014

0.009

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

8

w M

b

p

0 5 10 mm

scale

(1)E(1) (1)

cD

10.5

10.1

0.41

0.40

eHELLpQ

7.6

1.27

7.4

0.30

0.050

0.29

A

2

10.65

10.00

0.419

0.394

A

1

1.4

0.055

1.1

0.4

0.043

0.016

detail X

0.043

0.039

1.1

1.0

Q

3

0.25 0.1

0.01

A

θ

ywv θ

0.004

Z

0.9

0.4

0.035

0.016

o

8

o

0

(A )

L

p

L

0.25

0.01

OUTLINE

VERSION

SOT162-1

IEC JEDEC EIAJ

075E03 MS-013AA

REFERENCES

1997 Oct 07 17

EUROPEAN

PROJECTION

ISSUE DATE

95-01-24
97-05-22

Philips Semiconductors Preliminary specification

2 × 1 W BTL audio amplifier with output
channel switching

DIP16: plastic dual in-line package; 16 leads (300 mil); long body

D

seating plane

L

Z

16

e

b

b

1

9

A

w M

TDA8547

SOT38-1

M

E

A

2

A

1

c

(e )

1

M

H

pin 1 index

1

0 5 10 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

UNIT

mm

inches

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

A

max.

4.7 0.51 3.7

OUTLINE

VERSION

SOT38-1

min.

A

1 2

max.

0.15

IEC JEDEC EIAJ

050G09 MO-001AE

b

1.40

1.14

0.055

0.045

b

1

0.53

0.38

0.021

0.015

REFERENCES

cEe M

0.32

0.23

0.013

0.009

D

21.8

21.4

0.86

0.84

8

scale

(1) (1)

6.48

6.20

0.26

0.24

E

(1)

Z

e

0.30

1

M

L

3.9

3.4

0.15

0.13

E

8.25

7.80

0.32

0.31

EUROPEAN

PROJECTION

9.5

8.3

0.37

0.33

w

H

0.2542.54 7.62

0.010.100.0200.19

ISSUE DATE

92-10-02
95-01-19

max.

2.2

0.087

1997 Oct 07 18

Philips Semiconductors Preliminary specification

2 × 1 W BTL audio amplifier with output
channel switching

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

DIP

SOLDERING BY DIPPING OR BY WA VE
The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

R

EPAIRING SOLDERED JOINTS

Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

SO

REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO

packages.

(order code 9398 652 90011).

). If the

stg max

TDA8547

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

AVE SOLDERING

W
Wave soldering techniques can be used for all SO

packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

R

EPAIRING SOLDERED JOINTS

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

1997 Oct 07 19

Philips Semiconductors Preliminary specification

2 × 1 W BTL audio amplifier with output

TDA8547

channel switching

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Oct 07 20

Philips Semiconductors Preliminary specification

2 × 1 W BTL audio amplifier with output
channel switching

NOTES

TDA8547

1997 Oct 07 21

Philips Semiconductors Preliminary specification

2 × 1 W BTL audio amplifier with output
channel switching

NOTES

TDA8547

1997 Oct 07 22

Philips Semiconductors Preliminary specification

2 × 1 W BTL audio amplifier with output
channel switching

NOTES

TDA8547

1997 Oct 07 23

Philips Semiconductors – a worldwide company

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Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. [phone],

Fax. [phone]
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220050 MINSK, Tel. [phone], Fax. [phone]

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Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

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TEL AVIV 61180, Tel. [phone], Fax. [phone]
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20124 MILANO, Tel. [phone], Fax. [phone]
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Tel. [phone], Fax. [phone]
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

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Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

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Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

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Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
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Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
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Slovakia: see Austria
Slovenia: see Italy
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2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
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Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
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Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

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Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1997 SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 547027/25/01/pp24 Date of release: 1997 Oct 07 Document order number: 9397 750 02338