Datasheet TDA8542TS Datasheet (Philips)

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Page 1

INTEGRATED CIRCUITS

DATA SH EET

TDA8542TS

2 × 0.7 W BTL audio amplifier

Product speciﬁcation Supersedes data of 1997 Nov 17 File under Integrated Circuits, IC01

1998 Mar 25

Page 2

Philips Semiconductors Product speciﬁcation

2 × 0.7 W BTL audio ampliﬁer TDA8542TS

FEATURES

• Flexibility in use

• Few external components

• Low saturation voltage of output stage

• Gain can be fixed with external resistors

• Standby mode controlled by CMOS compatible levels

• Low standby current

GENERAL DESCRIPTION

The TDA8542TS is a two channel audio power amplifier for an output power of 2 × 0.7 W with a 16 Ω load at a 5 V supply. At a low supply voltage of 3.3 V an output power of

0.6 W with an 8 Ω load can be obtained. The circuit contains two Bridge-Tied Load (BTL) amplifiers with a complementary PNP-NPN output stage and standby/mute logic. The TDA8542TS is available in a SSOP20 package.

• No switch-on/switch-off plops

• High supply voltage ripple rejection

• Protected against electrostatic discharge

• Outputs short-circuit safe to ground, V

load

and across the

APPLICA TIONS

• Portable consumer products

• Personal computers

• Motor-driver (servo).

• Thermally protected.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

stb

THD total harmonic distortion P

supply voltage 2.2 5 18 V quiescent current VCC=5V − 15 22 mA standby current −−10 µA output power THD = 10%; RL=8Ω; VCC= 3.3 V 0.45 0.55 − W

THD = 10%; R

= 0.4 W − 0.15 − %

=16Ω; VCC= 5 V 0.6 0.7 − W

SVRR supply voltage ripple rejection 50 −−dB

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

TDA8542TS SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1

1998 Mar 25 2

Page 3

Philips Semiconductors Product speciﬁcation

2 × 0.7 W BTL audio ampliﬁer TDA8542TS

BLOCK DIAGRAM

handbook, full pagewidth

CCL

CCR

INL− INL+

n.c. n.c. n.c. n.c. n.c.

INR− INR+

SVR

−

17 16

2 7 9 12 19

CCL

− +

20 kΩ

−

OUTL−

OUTL+

20 kΩ

STANDBY/MUTE LOGIC

14 15

− +

CCR

20 kΩ

−

TDA8542TS

−

− +

OUTR−

OUTR+

MODE

BTL/SE

4 6

STANDBY/MUTE LOGIC

Fig.1 Block diagram.

1998 Mar 25 3

LGND

110

MBK445

RGND

Page 4

Philips Semiconductors Product speciﬁcation

2 × 0.7 W BTL audio ampliﬁer TDA8542TS

PINNING

SYMBOL PIN DESCRIPTION

LGND 1 ground, left channel n.c. 2 not connected OUTL+ 3 positive loudspeaker terminal,

left channel

MODE 4 operating mode select (standby,

mute, operating)

SVR 5 half supply voltage, decoupling

ripple rejection

BTL/SE 6 BTL loudspeaker or SE

headphone operation n.c. 7 not connected OUTR+ 8 positive loudspeaker terminal,

right channel n.c. 9 not connected RGND 10 ground, right channel V

CCR

11 supply voltage, right channel n.c. 12 not connected OUTR− 13 negative loudspeaker terminal,

right channel INR− 14 negative input, right channel INR+ 15 positive input, right channel INL+ 16 positive input, left channel INL− 17 negative input, left channel OUTL− 18 negative loudspeaker terminal,

left channel n.c. 19 not connected V

CCL

20 supply voltage, left channel

handbook, halfpage

LGND

n.c.

OUTL+

MODE

SVR

BTL/SE

n.c.

OUTR+

n.c.

RGND

TDA8542TS

6 7 8 9

MBK453

Fig.2 Pin configuration.

20 19 18 17 16 15 14 13 12 11

CCL

n.c. OUTL− INL− INL+ INR+ INR− OUTR− n.c. V

CCR

FUNCTIONAL DESCRIPTION

The TDA8542TS is a 2 × 0.7 W BTL audio power amplifier capable of delivering 2 × 0.7 W output power to a 16 Ω load at THD = 10% using a 5 V power supply. Using the MODE pin the device can be switched to standby and mute condition. The device is protected by an internal thermal shutdown protection mechanism. The gain can be set within a range from 6 to 30 dB by external feedback resistors.

Power ampliﬁer

The power amplifier is a Bridge-Tied Load (BTL) amplifier with a complementary PNP-NPN output stage. The voltage loss on the positive supply line is the saturation voltage of a PNP power transistor, on the

1998 Mar 25 4

negative side the saturation voltage of a NPN power transistor. The total voltage loss is <1 V and with a 5 V supply voltage and with a 16 Ω loudspeaker an output power of 0.7 W can be delivered.

Mode select pin

The device is in the standby mode (with a very low current consumption) if the voltage at the MODE pin is >(V

− 0.5 V), or if this pin is floating. At a MODE voltage

level of less than 0.5 V the amplifier is fully operational. In the range between 1.5 V and VCC− 1.5 V the amplifier is in mute condition. The mute condition is useful to suppress plop noise at the output caused by charging of the input capacitor.

Page 5

Philips Semiconductors Product speciﬁcation

2 × 0.7 W BTL audio ampliﬁer TDA8542TS

Headphone connection

A headphone can be connected to the amplifier using two coupling capacitors for each channel. The common GND pin of the headphone is connected to the ground of the amplifier (see Fig.13). In this case the BTL/SE pin must be either at a logic HIGH level or not connected at all.

not to ground, but to a voltage level of the application diagram. In this case the BTL/SE pin must be either at a logic LOW level or connected to ground. If the BTL/SE pin is at a LOW level, the power amplifier for the positive loudspeaker terminal is always in mute condition.

The two coupling capacitors can be omitted if it is allowed to connect the common GND pin of the headphone jack

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ORM

stg

amb

tot

supply voltage operating −0.3 +18 V input voltage −0.3 VCC+ 0.3 V repetitive peak output current − 1A storage temperature non-operating −55 +150 °C operating ambient temperature −40 +85 °C AC and DC short-circuit safe voltage − 10 V total power dissipation − 1.12 W

⁄2VCC. See Fig.4 for

QUALITY SPECIFICATION

In accordance with

“SNW-FQ-611-E”

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

th(j-a)

thermal resistance from junction to ambient in free air 110

(1)

K/W

Note

1. See Section “Thermal design considerations”.

Table 1 Maximum ambient temperature at different conditions

CONTINUOUS SINE WAVE DRIVEN

(V)

(Ω)

3.3 4 2 × 0.65 1.12 27

(W)

max

amb(max)

(°C)

(1)

3.3 8 2 × 0.55 0.60 84 582×1.2 1.33 −

(1)

5162×0.70 0.80 62

Note

1. See Section “Thermal design considerations”.

1998 Mar 25 5

Page 6

Philips Semiconductors Product speciﬁcation

2 × 0.7 W BTL audio ampliﬁer TDA8542TS

DC CHARACTERISTICS

=5V; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

stb

V I

IN+

MODE

BTL/SE

OUT+

, I

IN−

MODE

BTL/SE

− V

=25°C; RL=8Ω; V

amb

= 0 V; measured in test circuit Fig.3; unless otherwise speciﬁed.

MODE

supply voltage operating 2.2 5 18 V quiescent current RL= ∞; note 1 − 15 22 mA standby current V

MODE=VCC

−−10 µA

DC output voltage note 2 − 2.2 − V

 differential output voltage offset −−50 mV

OUT−

input bias current −−500 nA input voltage mode select operating 0 − 0.5 V

mute 1.5 − V standby V

input current mode select 0 < V

MODE<VCC

− 0.5 − V

−−20 µA

CC CC

input voltage BTL/SE pin single-ended 0 − 0.6 V

input current BTL/SE pin V

BTL 2 − V

=0 −−100 µA

BTL/SE

− 1.5 V V

Notes

1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal to the DC output offset voltage divided by R

2. The DC output voltage with respect to ground is approximately1⁄2VCC.

1998 Mar 25 6

Page 7

Philips Semiconductors Product speciﬁcation

2 × 0.7 W BTL audio ampliﬁer TDA8542TS

AC CHARACTERISTICS

=5V; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

THD total harmonic distortion P G

v(cl)

i(dif)

n(o)

SVRR supply voltage ripple rejection note 3 50 −−dB

o(mute)

=25°C; RL=8Ω; f = 1 kHz; V

amb

= 0 V; measured in test circuit Fig.3; unless otherwise speciﬁed.

MODE

output power at VCC=5V

THD = 10%; R THD = 10%; R THD = 0.5%; R THD = 0.5%; R

at V

= 3.3 V

THD = 10%; R THD = 10%; R THD = 0.5%; R THD = 0.5%; R

= 0.4 W − 0.15 0.3 %

=8Ω− 1.2 − W

=16Ω− 0.70 − W

=8Ω− 0.9 − W

=16Ω− 0.5 − W

=4Ω− 0.65 − W

=8Ω− 0.55 − W

=4Ω− 0.45 − W

=8Ω− 0.38 − W

closed-loop voltage gain note 1 6 − 30 dB differential input impedance − 100 − kΩ noise output voltage note 2 −−100 µV

note 4 40 −−dB output voltage in mute condition note 5 −−200 µV channel separation 40 −−dB

Notes

1. Gain of the amplifier is in test circuit of Fig.3.

------R1

2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a source impedance of R

=0Ω at the input.

3. Supply voltage ripple rejection is measured at the output, with a source impedance of RS=0Ω at the input. The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.

4. Supply voltage ripple rejection is measured at the output, with a source impedance of RS=0Ω at the input. The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.

5. Output voltage in mute position is measured with a 1 V (RMS) input voltage in a bandwidth of 20 kHz, so including noise.

1998 Mar 25 7

Page 8

Philips Semiconductors Product speciﬁcation

2 × 0.7 W BTL audio ampliﬁer TDA8542TS

TEST AND APPLICATION INFORMATION Test conditions

Because the application can be either Bridge-Tied Load (BTL) or Single-Ended (SE), the curves of each application are shown separately.

The thermal resistance = 110 K/W for the SSOP20; the maximum sine wave power dissipation for T

150 25–

---------------------110

For T

150 60–

---------------------110

1.14 W=

=60°C the maximum total power dissipation is:

amb

0.82 W=

=25°C is:

amb

Thermal design considerations

The ‘measured’ thermal resistance of the IC package is highly dependent on the configuration and size of the application board. Data may not be comparable between different semiconductor manufacturers because the application boards and test methods are not (yet) standardized. Also, the thermal performance of packages for a specific application may be different than presented here, because the configuration of the application boards (copper area) may be different. Philips Semiconductors uses FR-4 type application boards with 1 oz copper traces with solder coating.

The SSOP package has improved thermal conductivity which reduces the thermal resistance. Using a practical PCB layout (see Fig.22) with wider copper tracks to the corner pins and just under the IC, the thermal resistance from junction to ambient can be reduced to approximately 80 K/W. For T

dissipation for this PCB layout is:

=60°C the maximum total power

amb

150 60–

---------------------80

1.12 W=

function of frequency was measured with a low-pass filter of 80 kHz. The value of capacitor C3 influences the behaviour of the SVRR at low frequencies, increasing the value of C3 increases the performance of the SVRR. The figure of the mode select voltage (V

) as a function

of the supply voltage shows three areas; operating, mute and standby. It shows, that the DC-switching levels of the mute and standby respectively depends on the supply voltage level.

SE application

=25°C if not specially mentioned, VCC= 7.5 V,

amb

f = 1 kHz, RL=4Ω, Gv= 20 dB, audio band-pass 22 Hz to 22 kHz.

The SE application diagram is illustrated in Fig.14. If the BTL/SE pin (pin 6) is connected to ground, the

positive outputs (pins 3 and 8) will be in mute condition with a DC level of1⁄2VCC. When a headphone is used (RL≥ 25 Ω) the SE headphone application can be used without output coupling capacitors; load between negative output and one of the positive outputs (e.g. pin 3) as common pin. The channel separation will be less in comparison with the application using a coupling capacitor connected to ground.

Increasing the value of electrolytic capacitor C3 will result in a better channel separation. Because the positive output is not designed for high output current (2 × Io) at low load impedance (≤16 Ω), the SE application with output capacitors connected to ground is advised. The capacitor value of C4/C5 in combination with the load impedance determines the low frequency behaviour. The THD as a function of frequency was measured using a low-pass filter of 80 kHz. The value of capacitor C3 influences the behaviour of the SVRR at low frequencies, increasing the value of C3 increases the performance of the SVRR.

BTL application

=25°C if not specially mentioned, VCC=5V,

amb

f = 1 kHz, RL=8Ω, Gv= 20 dB, audio band-pass 22 Hz to 22 kHz.

The BTL application diagram is illustrated in Fig.3. The quiescent current has been measured without any

load impedance. The total harmonic distortion as a

1998 Mar 25 8

General remark

The frequency characteristic can be adapted by connecting a small capacitor across the feedback resistor. To improve the immunity of HF radiation in radio circuit applications, a small capacitor can be connected in parallel with the feedback resistor (56 kΩ); this creates a low-pass filter.

Page 9

Philips Semiconductors Product speciﬁcation

2 × 0.7 W BTL audio ampliﬁer TDA8542TS

BTL APPLICATION

handbook, full pagewidth

1 µF

10 kΩ

1 µF

10 kΩ

Gain left 2

Gain right 2

Pins 2,7, 9, 12and 19 are not connected.

×=

------- R1

×=

------- R3

50 kΩ

47 µF

50 kΩ

OUTR

INL INL

−

INR INR

SVR

MODE

BTL/SE

− +

20 11

17 16

TDA8542TS

14 15

5 4 6

110

Fig.3 BTL application.

GND

100 nF 100 µF

−

OUTL

−

OUTR

MBK443

handbook, halfpage

(mA)

RL= ∞.

420

81216

MGD890

VCC (V)

Fig.4 Iq as a function of VCC.

1998 Mar 25 9

handbook, halfpage

THD

(%)

−1

−2

f =1 kHz; Gv= 20dB; VCC= 5V; RL=8Ω.

−1

Fig.5 THD as a function of Po.

MBK446

Po (W)

Page 10

Philips Semiconductors Product speciﬁcation

2 × 0.7 W BTL audio ampliﬁer TDA8542TS

handbook, halfpage

THD

(%)

−1

−2

10 10

Po= 0.5W; Gv= 20dB; VCC= 5V; RL=8Ω.

Fig.6 THD as a function of frequency.

MBK447

−60

handbook, halfpage

(dB)

MGD893

(1)

−70

(2)

−80

(3)

−90

−100

10 10

f (Hz)

VCC= 5V, Vo= 2V, RL=8Ω. (1) Gv=30dB. (2) Gv=20dB. (3) Gv= 6dB.

Fig.7 Channel separation as a function of

frequency.

−20

handbook, halfpage

SVRR

(dB)

−40

−60

−80

10 10

VCC= 5V, Rs=0Ω, Vr= 100mV. (1) Gv=30dB. (2) Gv=20dB. (3) Gv= 6dB.

Fig.8 SVRR as a function of frequency.

MGD894

2.5

handbook, halfpage

(W)

MBK448

(1)

(2)

(3)

1.5

(1) (2)

0.5

f (Hz)

048

VCC (V)

THD =10%. (1) RL=8Ω. (2) RL=16Ω.

Fig.9 Po as a function of VCC.

1998 Mar 25 10

Page 11

Philips Semiconductors Product speciﬁcation

2 × 0.7 W BTL audio ampliﬁer TDA8542TS

handbook, halfpage

(W)

(1) RL=8Ω. (2) RL=16Ω.

(2)

(1)

4812

MBK449

VCC (V)

Fig.10 Worst case power dissipation as a function

of VCC.

handbook, halfpage

(W)

0.5 2.51 1.5 2

Sine wave of 1 kHz; VCC= 5V; RL=8Ω.

Fig.11 P as a function of Po.

MBK450

Po (W)

handbook, halfpage

(V)

−1

−2

−3

−4

−5

−6

−1

Band-pass =22 Hz to22 kHz. (1) VCC=3V. (2) VCC=5V. (3) VCC=12V.

Fig.12 Vo as a function of Vms.

(1) (2) (3)

MGD898

10 10

Vms (V)

mute

MGL210

operating

VP (V)

handbook, halfpage

MODE

(V)

048

Fig.13 V

MODE

standby

as a function of VP.

1998 Mar 25 11

Page 12

Philips Semiconductors Product speciﬁcation

2 × 0.7 W BTL audio ampliﬁer TDA8542TS

SE APPLICATION

handbook, full pagewidth

1 µF

10 kΩ

1 µF

10 kΩ

Gain left

Gain right

------- R1

------- R3

Pins 2,7, 9, 12and 19 are not connected.

100 kΩ

47 µF

100 kΩ

OUTR

17 16

20 11

INL INL

− +

−

TDA8542TS

−

INR

SVR

MODE

BTL/SE

15 5 4 6

110

GND

Fig.14 Single-ended application.

OUTL

OUTR

MBK444

−

100 nF

470 µF

100 µF

RL = 8 Ω

handbook, halfpage

THD

(%)

−1

−2

f =1 kHz, Gv=20dB. (1) VCC= 7.5V, RL=4Ω. (2) VCC= 9V, RL=8Ω. (3) VCC= 12V, RL=16Ω.

Fig.15 THD as a function of Po.

MGD899

handbook, halfpage

THD

(%)

MGD900

(1) (2) (3)

−1

Po (W)

−1

−2

10 10

(1)

(2) (3)

f (Hz)

Po= 0.5W, Gv= 20dB. (1) VCC= 7.5V, RL=4Ω. (2) VCC= 9V, RL=8Ω. (3) VCC= 12V, RL=16Ω.

Fig.16 THD as a function of frequency.

1998 Mar 25 12

Page 13

Philips Semiconductors Product speciﬁcation

2 × 0.7 W BTL audio ampliﬁer TDA8542TS

−20

handbook, halfpage

(dB)

−40

(1)

−60

(2) (3)

−80

−100

(4) (5)

Vo= 1V, Gv=20dB. (1) VCC= 5V, RL=32Ω, to buffer. (2) VCC= 7.5V, RL=4Ω. (3) VCC= 9V, RL=8Ω. (4) VCC= 12V, RL=16Ω. (5) VCC= 5V, RL=32Ω.

Fig.17 Channel separation as a function of

frequency.

MGD901

f (Hz)

−20

handbook, halfpage

MGD902

SVRR

(dB)

−40

(1) (2)

−60

(3)

−80 10 10

RS=0Ω, V

ripple

= 100mV.

f (Hz)

(1) Gv=24dB. (2) Gv=20dB. (3) Gv= 0dB.

Fig.18 SVRR as a function of frequency.

handbook, halfpage

(W)

1.6

1.2

0.8

0.4

THD =10%. (1) RL=4Ω. (2) RL=8Ω. (3) RL=16Ω.

(1)

(2)

(3)

VCC (V)

Fig.19 Po as a function of VCC.

MBK451

MBK452

(3)

(W)

handbook, halfpage

(2)

(1)

VCC (V)

1612

THD =10%. (1) RL=4Ω. (2) RL=8Ω. (3) RL=16Ω.

Fig.20 Worst case power dissipation as a function

of VCC.

1998 Mar 25 13

Page 14

Philips Semiconductors Product speciﬁcation

2 × 0.7 W BTL audio ampliﬁer TDA8542TS

2.4

handbook, halfpage

(W)

1.6

0.8

f =1 kHz. (1) VCC= 12V, RL=16Ω. (2) VCC= 7.5V, RL=4Ω. (3) VCC= 9V, RL=8Ω.

Fig.21 P as a function of Po.

MGD905

(1)

(2) (3)

0.4 0.8 1.6

1.2 Po (W)

1998 Mar 25 14

Page 15

Philips Semiconductors Product speciﬁcation

2 × 0.7 W BTL audio ampliﬁer TDA8542TS

handbook, full pagewidth

IN1

IN2

a. Top view copper layout.

1 µF

−OUT1

11 kΩ

−OUT2

56 kΩ

8542/47TS

100 µF

100 nF

TDA

GND

10 kΩ

b. Top view components layout.

+OUT1

10 kΩ

47 µF

+OUT2

TDA 8542TS 8547TS

MODE

SELECT

CIC

Nijmegen

MGK997

Fig.22 Printed-circuit board layout (BTL).

1998 Mar 25 15

Page 16

Philips Semiconductors Product speciﬁcation

2 × 0.7 W BTL audio ampliﬁer TDA8542TS

PACKAGE OUTLINE

SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm

pin 1 index

110

w M

detail X

SOT266-1

v M

(A )

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

OUTLINE

VERSION

SOT266-1

max.

1.5

0.1501.4

1.2

0.32

0.20

0.13

0.25

IEC JEDEC EIAJ

UNIT A1A2A

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

(1)E(1)

6.6

6.4

REFERENCES

4.5

0.65 1.0 0.2

4.3

1998 Mar 25 16

eHELLpQZywv θ

6.6

6.2

0.75

0.45

0.65

0.45

PROJECTION

0.13 0.1

EUROPEAN

(1)

0.48

0.18

ISSUE DATE

90-04-05 95-02-25

Page 17

Philips Semiconductors Product speciﬁcation

2 × 0.7 W BTL audio ampliﬁer TDA8542TS

SOLDERING Introduction

There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used.

This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our

“IC Package Databook”

Reﬂow soldering

Reflow soldering techniques are suitable for all SSOP packages.

Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C.

Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C.

Wave soldering

Wave soldering is not recommended for SSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices.

(order code 9398 652 90011).

If wave soldering cannot be avoided, the following conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave) soldering technique should be used.

• The longitudinal axis of the package footprint must

be parallel to the solder flow and must incorporate solder thieves at the downstream end.

Even with these conditions, only consider wave soldering SSOP packages that have a body width of

4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1).

During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured.

Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.

1998 Mar 25 17

Page 18

Philips Semiconductors Product speciﬁcation

2 × 0.7 W BTL audio ampliﬁer TDA8542TS

DEFINITIONS

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.8

1998 Mar 25 18

Page 19

Philips Semiconductors Product speciﬁcation

2 × 0.7 W BTL audio ampliﬁer TDA8542TS

NOTES

1998 Mar 25 19

Page 20

Philips Semiconductors – a worldwide company

Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,

Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773

Belgium: see The Netherlands Brazil: seeSouth America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381

China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700

Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. +30 1 4894 339/239, Fax. +30 1 4814 240

Hungary: seeAustria India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966

Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. +9-5 800 234 7381

Middle East: see Italy

Netherlands: Postbus 90050, 5600PB EINDHOVEN, Bldg. VB,

Tel. +3140 27 82785,Fax. +31 4027 88399 New Zealand: 2 WagenerPlace, C.P.O. Box 1041, AUCKLAND,

Tel. +649 849 4160,Fax. +64 9849 7811 Norway: Box 1, Manglerud0612, OSLO,

Tel. +4722 74 8000,Fax. +47 2274 8341 Philippines: Philips Semiconductors Philippines Inc.,

106 ValeroSt. Salcedo Village, P.O.Box 2108 MCC,MAKATI, Metro MANILA, Tel.+63 2 8166380, Fax. +632 817 3474

Poland: Ul. Lukiska10, PL 04-123 WARSZAWA, Tel. +4822 612 2831,Fax. +48 22612 2327

Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva35A, 119048 MOSCOW,

Tel. +7095 755 6918,Fax. +7 095755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. +65 350 2538, Fax. +65 251 6500

Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494

South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382

Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381

Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. +381 11 625 344, Fax.+381 11 635 777

For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 545102/25/02/pp20 Date of release: 1998 Mar 25 Document order number: 9397 750 03351