Datasheet TDA8542T Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TDA8542

2 × 1 W BTL audio amplifier

Product specification
Supersedes data of 1997 Feb 19
File under Integrated Circuits, IC01

1998 Apr 01

Philips Semiconductors Product specification

2 × 1 W BTL audio amplifier TDA8542

FEATURES

• Flexibility in use

• Few external components

• Low saturation voltage of output stage

APPLICATIONS

• Portable consumer products

• Personal computers

• Motor-driver (servo).

• Gain can be fixed with external resistors

• Standby mode controlled by CMOS compatible levels

• Low standby current

• No switch-on/switch-off plops

• High supply voltage ripple rejection

• Protected against electrostatic discharge

• Outputs short-circuit safe to ground, V

and across the

CC

GENERAL DESCRIPTION

The TDA8542(T) is a two channel audio power amplifier
for an output power of 2 × 1 W with an 8 Ω load at a 5 V
supply. The circuit contains two BTL amplifiers with a
complementary PNP-NPN output stage and standby/mute
logic. The TDA8542T comes in a 16 pin SO package and
the TDA8542 in a 16 pin DIP package.

load

• Thermally protected.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CC

I

q

I

stb

P

o

THD total harmonic distortion P

supply voltage 2.2 5 18 V
quiescent current VCC=5V − 15 22 mA
standby current −−10 µA
output power THD = 10%; RL=8Ω; VCC=5V 1 1.2 − W

= 0.5 W − 0.15 − %

o

SVRR supply voltage ripple rejection 50 −−dB

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

TDA8542T SO16L plastic small outline package; 16 leads; body width 7.5 mm SOT162-1
TDA8542 DIP16 plastic dual in-line package; 16 leads (300 mil); long body SOT38-1

1998 Apr 01 2

Philips Semiconductors Product specification

2 × 1 W BTL audio amplifier TDA8542

BLOCK DIAGRAM

V

handbook, full pagewidth

CCL

V

CCR

9

16

INL−
INL+

INR−
INR+

SVR

−

14
13

V

CCL

−
+

R

R

15

OUTL−

−

20 kΩ

−

2

OUTL+

+

20 kΩ

STANDBY/MUTE LOGIC

11
12

4

V

−
+

CCR

20 kΩ

20 kΩ

−

TDA8542

R

−

−
+

10

OUTR−

R

7

OUTR+

MODE

BTL/SE

3
5

STANDBY/MUTE LOGIC

Fig.1 Block diagram.

1998 Apr 01 3

LGND

18

MGB975

RGND

Philips Semiconductors Product specification

2 × 1 W BTL audio amplifier TDA8542

PINNING

SYMBOL PIN DESCRIPTION

LGND 1 ground, left channel
OUTL+ 2 positive loudspeaker terminal,

left channel

MODE 3 operating mode select (standby,

mute, operating)

SVR 4 half supply voltage, decoupling

ripple rejection

BTL/SE 5 BTL loudspeaker or SE

headphone operation
n.c. 6 not connected
OUTR+ 7 positive loudspeaker terminal,

right channel
RGND 8 ground, right channel
V

CCR

9 supply voltage, right channel

OUTR− 10 negative loudspeaker terminal,

right channel
INR− 11 negative input, right channel
INR+ 12 positive input, right channel
INL+ 13 positive input, left channel
INL− 14 negative input, left channel
OUTL− 15 negative loudspeaker terminal,

left channel
V

CCL

16 supply voltage, left channel

FUNCTIONAL DESCRIPTION

The TDA8542(T) is a 2 × 1 W BTL audio power amplifier
capable of delivering 2 × 1 W output power to an 8 Ω load
at THD = 10% using a 5 V power supply. Using the MODE
pin the device can be switched to standby and mute
condition. The device is protected by an internal thermal
shutdown protection mechanism. The gain can be set
within a range from 6 dB to 30 dB by external feedback
resistors.

Power amplifier

The power amplifier is a Bridge Tied Load (BTL) amplifier
with a complementary PNP-NPN output stage.
The voltage loss on the positive supply line is the
saturation voltage of a PNP power transistor, on the
negative side the saturation voltage of a NPN power
transistor. The total voltage loss is <1 V and with a 5 V
supply voltage and an 8 Ω loudspeaker an output power of
1 W can be delivered.

Mode select pin

The device is in the standby mode (with a very low current
consumption) if the voltage at the MODE pin is
>(V

− 0.5 V), or if this pin is floating. At a MODE voltage

CC

level of less than 0.5 V the amplifier is fully operational.
In the range between 1.5 V and VCC− 1.5 V the amplifier
is in mute condition. The mute condition is useful to
suppress plop noise at the output caused by charging of
the input capacitor.

handbook, halfpage

LGND

OUTL+

MODE

SVR

BTL/SE

n.c.

OUTR+

RGND

1
2
3
4
5
6
7
8

TDA8542

MGB974

16
15
14
13
12
11
10

9

V

CCL

OUTL−
INL−
INL+
INR+
INR−
OUTR−
V

CCR

Fig.2 Pin configuration.

1998 Apr 01 4

Headphone connection

A headphone can be connected to the amplifier using two
coupling capacitors for each channel. The common
GND pin of the headphone is connected to the ground of
the amplifier (see Fig.13). In this case the BTL/SE pin must
be either on a logic HIGH level or not connected at all.

The two coupling capacitors can be omitted if it is allowed
to connect the common GND pin of the headphone jack
not to ground, but to a voltage level of

1

⁄2VCC (see Fig.13).

In this case the BTL/SE pin must be either on a logic LOW
level or connected to ground. If the BTL/SE pin is on a
LOW level, the power amplifier for the positive
loudspeaker terminal is always in mute condition.

Philips Semiconductors Product specification

2 × 1 W BTL audio amplifier TDA8542

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

V

I

I

ORM

T

stg

T

amb

V

psc

P

tot

QUALITY SPECIFICATION

supply voltage operating −0.3 +18 V
input voltage −0.3 VCC+ 0.3 V
repetitive peak output current − 1A
storage temperature non-operating −55 +150 °C
operating ambient temperature −40 +85 °C
AC and DC short-circuit safe voltage − 10 V
total power dissipation SO16L − 1.2 W

DIP16 − 2.2 W

In accordance with

Handbook”

. The handbook can be ordered using the code 9397 750 00192.

“SNW-FQ-611-E”

. The number of the quality specification can be found in the

“Quality Reference

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air:

TDA8542T (SO16L) 100 K/W
TDA8542 (DIP16) 55 K/W

1998 Apr 01 5

Philips Semiconductors Product specification

2 × 1 W BTL audio amplifier TDA8542

DC CHARACTERISTICS

V

=5V; T

CC

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CC

I

q

I

stb

V

O

V
I

IN+

V

I

MODE

V

I

BS

OUT+

, I

MODE

BS

− V

IN−

=25°C; RL=8Ω; V

amb

= 0 V; measured in test circuit Fig.3; unless otherwise specified.

MODE

supply voltage operating 2.2 5 18 V
quiescent current RL= ∞; note 1 − 15 22 mA
standby current V

MODE=VCC

−−10 µA

DC output voltage note 2 − 2.2 − V

 differential output voltage offset −−50 mV

OUT−

input bias current −−500 nA
input voltage mode select operating 0 − 0.5 V

mute 1.5 − V
standby V

input current mode select 0 < V

MODE<VCC

− 0.5 − V

CC

−−20 µA

CC
CC

input voltage BTL/SE pin single-ended 0 − 0.6 V

BTL 2 − V

CC

input current BTL/SE pin VBS=0 −−100 µA

− 1.5 V
V

V

Notes

1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal
to the DC output offset voltage divided by R

.

L

2. The DC output voltage with respect to ground is approximately 0.5 × VCC.

1998 Apr 01 6

Philips Semiconductors Product specification

2 × 1 W BTL audio amplifier TDA8542

AC CHARACTERISTICS

V

=5V; T

CC

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

P

o

THD total harmonic distortion P
G

v

Z

i

V

no

SVRR supply voltage ripple rejection note 3 50 −−dB

V

o

α

cs

Notes

1. Gain of the amplifier is 2 × R2/R1 in test circuit of Fig.3.

2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a
source impedance of R

3. Supply voltage ripple rejection is measured at the output, with a source impedance of RS=0Ω at the input.
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to
the positive supply rail.

4. Supply voltage ripple rejection is measured at the output, with a source impedance of RS=0Ω at the input.
The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS),
which is applied to the positive supply rail.

5. Output voltage in mute position is measured with a 1 V (RMS) input voltage in a bandwidth of 20 kHz, so including
noise.

=25°C; RL=8Ω; f = 1 kHz; V

amb

= 0 V; measured in test circuit Fig.3; unless otherwise specified.

MODE

output power THD = 10% 1 1.2 − W

THD = 0.5% 0.6 0.9 − W

= 0.5 W − 0.15 0.3 %

o

closed loop voltage gain note 1 6 − 30 dB
differential input impedance − 100 − kΩ
noise output voltage note 2 −−100 µV

note 4 40 −−dB
output voltage in mute condition note 5 −−200 µV
channel separation 40 −−dB

=0Ω at the input.

S

1998 Apr 01 7

Philips Semiconductors Product specification

2 × 1 W BTL audio amplifier TDA8542

TEST AND APPLICATION INFORMATION
Test conditions

Because the application can be either Bridge-Tied Load
(BTL) or Single-Ended (SE), the curves of each application
are shown separately.

The thermal resistance = 55 K/W for the DIP16; the
maximum sine wave power dissipation for T

150 25–

---------------------­55

For T

150 60–

---------------------­55

2.3 W=

=60°C the maximum total power dissipation is:

amb

1.7 W=

=25°C is:

amb

BTL application

=25°C if not specially mentioned, VCC=5V,

T

amb

f = 1 kHz, RL=8Ω, Gv= 20 dB, audio band-pass
22 Hz to 22 kHz.

The BTL application diagram is illustrated in Fig.3.
The quiescent current has been measured without any

load impedance. The total harmonic distortion as a
function of frequency was measured with a low-pass filter
of 80 kHz. The value of capacitor C3 influences the
behaviour of the SVRR at low frequencies, increasing the
value of C3 increases the performance of the SVRR.
The figure of the mode select voltage (Vms) as a function
of the supply voltage shows three areas; operating, mute
and standby. It shows, that the DC-switching levels of the
mute and standby respectively depends on the supply
voltage level.

SE application

=25°C if not specially mentioned, VCC= 7.5 V,

T

amb

f = 1 kHz, RL=4Ω, Gv= 20 dB, audio band-pass
22 Hz to 22 kHz.

The SE application diagram is illustrated in Fig.14.
If the BTL/SE pin (pin 5) is connected to ground, the

positive outputs (pins 2 and 7) will be in mute condition
with a DC level of1⁄2VCC. When a headphone is used
(RL≥ 25 Ω) the SE headphone application can be used
without output coupling capacitors; load between negative
output and one of the positive outputs (e.g. pin 2) as
common pin.

Increasing the value of electrolytic capacitor C3 will result
in a better channel separation. Because the positive output
is not designed for high output current (2 × I

) at low load

o

impedance (≤16 Ω), the SE application with output
capacitors connected to ground is advised. The capacitor
value of C4/C5 in combination with the load impedance
determines the low frequency behaviour. The THD as a
function of frequency was measured using a low-pass filter
of 80 kHz. The value of capacitor C3 influences the
behaviour of the SVRR at low frequencies, increasing the
value of C3 increases the performance of the SVRR.

General remark

The frequency characteristic can be adapted by
connecting a small capacitor across the feedback resistor.
To improve the immunity of HF radiation in radio circuit
applications, a small capacitor can be connected in
parallel with the feedback resistor (56 kΩ); this creates a
low-pass filter.

1998 Apr 01 8

Philips Semiconductors Product specification

2 × 1 W BTL audio amplifier TDA8542

BTL APPLICATION

handbook, full pagewidth

Gain left 2

Gain right 2

×=

×=

R2

------- ­R1

R4

------- ­R3

1 µF

V

1 µF

V

iL

iR

R1

10 kΩ

R3

10 kΩ

R2

R4

50 kΩ

C3

47 µF

50 kΩ

OUTR

INL
INL

−

INR
INR

SVR

MODE

BTL/SE

−
+

−
+

16 9

14
13

TDA8542

11
12

4
3
5

18

Fig.3 BTL application.

GND

V

CC

100 nF 100 µF

−

OUTL

15

R

+

OUTL

2

−

OUTR

10

+

OUTR

7

MBH798

L

R

L

30

handbook, halfpage

I

q

(mA)

20

10

0

0

RI =∞.

MGD890

420

81216

VCC (V)

10

handbook, halfpage

THD

(%)

1

−1

10

−2

10

−2

10

f = 1 kHz, Gv=20dB.
(1) VCC= 5 V, RL=8Ω.
(2) VCC= 9 V, RL=16Ω.

Fig.4 Iq as a function of VCC.

(2)

(1)

−1

10

1

Po (W)

Fig.5 THD as a function of Po.

MGD891

10

1998 Apr 01 9

Philips Semiconductors Product specification

2 × 1 W BTL audio amplifier TDA8542

10

handbook, halfpage

THD

(%)

1

−1

10

−2

10

10 10

Po= 0.5 W, Gv= 20 dB.
(1) VCC= 5 V, RL=8Ω.
(2) VCC= 9 V, RL=16Ω.

Fig.6 THD as a function of frequency.

MGD892

−60

handbook, halfpage

α

cs

(dB)

MGD893

(1)

−70

(2)

(1)

−80

(2)

(3)

−90

2

3

10

4

10

f (Hz)

5

10

−100
10 10

2

3

10

4

10

f (Hz)

5

10

VCC= 5 V, Vo= 2 V, RL=8Ω.
(1) Gv=30dB.
(2) Gv=20dB.
(3) Gv= 6 dB.

Fig.7 Channel separation as a function of

frequency.

−20

handbook, halfpage

SVRR

(dB)

MGD894

−40

(1)

(2)

−60

−80

10 10

2

10

(3)

3

4

10

f (Hz)

5

10

VCC= 5 V, Rs=0Ω, Vr100 mV.
(1) Gv=30dB.
(2) Gv=20dB.
(3) Gv= 6 dB.

Fig.8 SVRR as a function of frequency.

1998 Apr 01 10

2.5

handbook, halfpage

P

o

(W)

2

1.5

1

0.5

0

048

(1) THD = 10%, RL=8Ω.
(2) THD = 10%, RL=16Ω.

Fig.9 Po as a function of VCC.

(1) (2)

VCC (V)

MGD895

12

Philips Semiconductors Product specification

2 × 1 W BTL audio amplifier TDA8542

handbook, halfpage

3

P

(W)

2

1

0

0

(1) RL=8Ω.
(2) RL=16Ω.

(1) (2)

4812

MGD896

VCC (V)

Fig.10 Worst case power dissipation as a function

of VCC.

3

handbook, halfpage

P

(W)

2

1

0

0

0.5 2.51 1.5 2

Sine wave of 1 kHz.
(1) VCC= 9 V, RL=16Ω.
(2) VCC= 5 V, RL=8Ω.

Fig.11 P

(1)

(2)

as a function of Po.

dis

MGD897

Po (W)

10

handbook, halfpage

V

o

(V)

1

−1

10

−2

10

−3

10

−4

10

−5

10

−6

10

−1

10

Band-pass = 22 Hz to 22 kHz.
(1) VCC=3V.
(2) VCC=5V.
(3) VCC=12V.

Fig.12 Vo as a function of Vms.

(1) (2) (3)

1

MGD898

10 10

Vms (V)

mute

12

MGL070

operating

VP (V)

16

16

handbook, halfpage

V

ms

(V)

12

8

4

2

0

048

standby

Fig.13 Vms as a function of VP.

1998 Apr 01 11

Philips Semiconductors Product specification

2 × 1 W BTL audio amplifier TDA8542

SE APPLICATION

handbook, full pagewidth

Gain left

Gain right

R2

=

------- ­R1

R4

=

------- ­R3

1 µF

V

1 µF

V

V

R2

100 kΩ

R1

10 kΩ

iL

C3

INL
INL

−
+

14
13

16 9

OUTL

15

47 µF

−

OUTR

100 kΩ

R4

R3

10 kΩ

INR
INR

−
+

iR

SVR

MODE

BTL/SE

TDA8542

11
12
4
3
5

18

GND

OUTL

2

OUTR

10

OUTR

7

MBH799

−

+

−

+

100 nF

C4

470 µF

C5

470 µF

100 µF

R

L

R

L

CC

Fig.14 Single-ended application.

10

handbook, halfpage

THD

(%)

1

−1

10

−2

10

−2

10

f = 1 kHz, Gv=20dB.
(1) VCC= 7.5 V, RL=4Ω.
(2) VCC= 9 V, RL=8Ω.
(3) VCC= 12 V, RL=16Ω.

Fig.15 THD as a function of Po.

MGD899

10

handbook, halfpage

THD

(%)

MGD900

1

(1)
(2)
(3)

−1

10

1

Po (W)

10

−1

10

−2

10

10 10

(1)

(2)
(3)

2

3

10

4

10

f (Hz)

5

10

Po= 0.5 W, Gv= 20 dB.
(1) VCC= 7.5 V, RL=4Ω.
(2) VCC= 9 V, RL=8Ω.
(3) VCC= 12 V, RL=16Ω.

Fig.16 THD as a function of frequency.

1998 Apr 01 12

Philips Semiconductors Product specification

2 × 1 W BTL audio amplifier TDA8542

−20

handbook, halfpage

α

cs

(dB)

−40

(1)

−60

(2)
(3)

−80

−100

10

2

10

(4)
(5)

3

10

4

10

Vo= 1 V, Gv=20dB.
(1) VCC= 5 V, RL=32Ω, to buffer.
(2) VCC= 7.5 V, RL=4Ω.
(3) VCC= 9 V, RL=8Ω.
(4) VCC= 12 V, RL=16Ω.
(5) VCC= 5 V, RL=32Ω.

Fig.17 Channel separation as a function of

frequency.

MGD901

f (Hz)

−20

handbook, halfpage

MGD902

SVRR

(dB)

−40

(1)
(2)

−60

(3)

5

10

−80
10 10

2

3

10

4

10

f (Hz)

5

10

VCC= 7.5 V, RL=4Ω,Rs=0Ω, Vr= 100 mV.
(1) Gv=24dB.
(2) Gv=20dB.
(3) Gv= 0 dB.

Fig.18 SVRR as a function of frequency.

handbook, halfpage

2

P

o

(W)

1.6

1.2

0.8

0.4

0

0

THD = 10%.
(1) RL=4Ω.
(2) RL=8Ω.
(3) RL=16Ω.

(1) (2) (3)

48

12

VCC (V)

Fig.19 Po as a function of VCC.

MGD903

3

handbook, halfpage

P

(W)

(1) (2) (3)

MGD904

2

1

16

0

0

48

VCC (V)

1612

(1) RL=4Ω.
(2) RL=8Ω.
(3) RL=16Ω.

Fig.20 Worst case power dissipation as a function

of VCC.

1998 Apr 01 13

Philips Semiconductors Product specification

2 × 1 W BTL audio amplifier TDA8542

2.4

handbook, halfpage

P

(W)

1.6

0.8

0

0

Sine wave of 1 kHz.
(1) VCC= 12 V, RL=16Ω.
(2) VCC= 7.5 V, RL=4Ω.
(3) VCC= 9 V, RL=8Ω.

0.4 0.8 1.6

(1)

(2)
(3)

1.2

Fig.21 Power dissipation as a function of Po.

MGD905

Po (W)

1998 Apr 01 14

Philips Semiconductors Product specification

2 × 1 W BTL audio amplifier TDA8542

handbook, full pagewidth

MODE

B/S

+

OUT2

12 kΩ

P3

a. Top view.

GND

100 µF

+

OUT1

100 nF

12 kΩ

116

TDA8542

47 µF

89

b. Component side.

+

V

CC

−

OUT1

56 kΩ

11 kΩ

11 kΩ

56 kΩ

−

OUT2

IN1

1 µF

1 µF

IN2

MBH921

Fig.22 Printed-circuit board layout (BTL and SE).

1998 Apr 01 15

Philips Semiconductors Product specification

2 × 1 W BTL audio amplifier TDA8542

PACKAGE OUTLINES

SO16: plastic small outline package; 16 leads; body width 7.5 mm

D

c

y

Z

16

pin 1 index

1

e

9

A

2

A

1

8

w M

b

p

E

H

E

detail X

SOT162-1

A

X

v M

A

Q

(A )

L

p

L

A

3

θ

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

OUTLINE

VERSION

SOT162-1

A

max.

2.65

0.10

A

1

0.30

0.10

0.012

0.004

A2A

2.45

2.25

0.096

0.089

IEC JEDEC EIAJ

075E03 MS-013AA

0.25

0.01

b

3

p

0.49

0.32

0.36

0.23

0.019

0.013

0.014

0.009

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

(1)E(1) (1)

cD

10.5

7.6

7.4

0.30

0.29

1.27

0.050

10.1

0.41

0.40

REFERENCES

1998 Apr 01 16

eHELLpQ

10.65

10.00

0.419

0.394

1.4

0.055

1.1

0.4

0.043

0.016

1.1

1.0

0.043

0.039

PROJECTION

0.25

0.25 0.1

0.01

0.01

EUROPEAN

ywv θ

Z

0.9

0.4

8

0.004

ISSUE DATE

0.035

0.016

95-01-24
97-05-22

0

o
o

Philips Semiconductors Product specification

2 × 1 W BTL audio amplifier TDA8542

DIP16: plastic dual in-line package; 16 leads (300 mil); long body

D

seating plane

L

Z

16

pin 1 index

e

b

b

1

9

A

w M

SOT38-1

M

E

A

2

A

1

c

(e )

1

M

H

E

1

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

UNIT

mm

inches

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

A

max.

4.7 0.51 3.7

OUTLINE

VERSION

SOT38-1

min.

A

1 2

max.

0.15

IEC JEDEC EIAJ

050G09 MO-001AE

b

1.40

1.14

0.055

0.045

b

0.53

0.38

0.021

0.015

1

cEe M

0.32

0.23

0.013

0.009

REFERENCES

(1) (1)

D

21.8

21.4

0.86

0.84

1998 Apr 01 17

6.48

6.20

0.26

0.24

8

(1)

Z

e

0.30

1

0.15

0.13

M

L

3.9

3.4

E

8.25

7.80

0.32

0.31

EUROPEAN

PROJECTION

9.5

8.3

0.37

0.33

w

H

0.2542.54 7.62

0.010.100.0200.19

ISSUE DATE

92-10-02
95-01-19

max.

2.2

0.087

Philips Semiconductors Product specification

2 × 1 W BTL audio amplifier TDA8542

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

(order code 9398 652 90011).

DIP

SOLDERING BY DIPPING OR BY WA VE
The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T

stg max

). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

R

EPAIRING SOLDERED JOINTS

Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

SO

REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO

packages.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

AVE SOLDERING

W
Wave soldering techniques can be used for all SO

packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

R

EPAIRING SOLDERED JOINTS

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

1998 Apr 01 18

Philips Semiconductors Product specification

2 × 1 W BTL audio amplifier TDA8542

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Apr 01 19

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. [phone],

Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
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Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
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Hungary: seeAustria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

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Indonesia: PT Philips Development Corporation, Semiconductors Division,
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Ireland: Newstead, Clonskeagh, DUBLIN 14,
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Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. [phone], Fax. [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone]

Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
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South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
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Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1998 SCA59
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 545102/00/05/pp20 Date of release: 1998 Apr 01 Document order number: 9397 75003353