Page 1
INTEGRATED CIRCUITS
DATA SH EET
TDA8542AT
2 × 1.5 W BTL audio amplifier
Product specification
Supersedes data of 1997 Nov 14
File under Integrated Circuits, IC01
1998 Mar 25
Page 2
Philips Semiconductors Product specification
2 × 1.5 W BTL audio amplifier TDA8542AT
FEATURES
• Flexibility in use
• Few external components
• Low saturation voltage of output stage
• Gain can be fixed with external resistors
• Standby mode controlled by CMOS compatible levels
GENERAL DESCRIPTION
The TDA8542AT is a two channel audio power amplifier
for an output power of 2 × 1.5 W with an 8 Ω load at a 6 V
supply. The circuit contains two Bridge-Tied Load (BTL)
amplifiers with a complementary PNP-NPN output stage
and standby/mute logic. The TDA8542AT comes in a
20-pin SO package.
• Low standby current
• No switch-on/switch-off plops
• High supply voltage ripple rejection
• Protected against electrostatic discharge
• Outputs short-circuit safe to ground, V
CC
and across the
APPLICATIONS
• Portable consumer products
• Personal computers
• Motor-driver (servo).
load
• Thermally protected.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CC
I
q
I
stb
P
o
THD total harmonic distortion P
supply voltage 2.2 6 18 V
quiescent current VCC=6V − 15 22 mA
standby current −−10 µA
output power THD = 10%; RL=8Ω; VCC=6V 1 1.5 − W
= 0.5 W − 0.15 − %
o
SVRR supply voltage ripple rejection 50 −−dB
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
TDA8542AT SO20 plastic small outline package; 20 leads; body width 7.5 mm SOT163-1
1998 Mar 25 2
Page 3
Philips Semiconductors Product specification
2 × 1.5 W BTL audio amplifier TDA8542AT
BLOCK DIAGRAM
V
handbook, full pagewidth
CCL
V
CCR
12
19
INL−
INL+
INR−
INR+
SVR
−
17
16
V
CCL
−
+
R
R
18
OUTL−
−
20 kΩ
−
3
OUTL+
+
20 kΩ
STANDBY/MUTE LOGIC
14
15
5
V
−
+
CCR
20 kΩ
20 kΩ
−
TDA8542AT
R
−
−
+
13
OUTR−
R
8
OUTR+
MODE
BTL/SE
4
6
7
n.c.
STANDBY/MUTE LOGIC
GND1GND10GND11GND
Fig.1 Block diagram.
1998 Mar 25 3
LGND
29
RGND
MGM211
20
Page 4
Philips Semiconductors Product specification
2 × 1.5 W BTL audio amplifier TDA8542AT
PINNING
SYMBOL PIN DESCRIPTION
GND 1 ground; note 1
LGND 2 ground, left channel
OUTL+ 3 positive loudspeaker terminal,
left channel
MODE 4 operating mode select (standby,
mute, operating)
SVR 5 half supply voltage, decoupling
ripple rejection
BTL/SE 6 BTL loudspeaker or SE
headphone operation
n.c. 7 not connected
OUTR+ 8 positive loudspeaker terminal,
right channel
RGND 9 ground, right channel
GND 10 ground; note 1
GND 11 ground; note 1
V
CCR
12 supply voltage, right channel
OUTR− 13 negative loudspeaker terminal,
right channel
INR− 14 negative input, right channel
INR+ 15 positive input, right channel
INL+ 16 positive input, left channel
INL− 17 negative input, left channel
OUTL− 18 negative loudspeaker terminal,
left channel
V
CCL
19 supply voltage, left channel
GND 20 ground; note 1
handbook, halfpage
GND
1
LGND
2
OUTL+
BTL/SE
OUTR+
MODE
SVR
n.c.
RGND
GND
3
4
5
TDA8542AT
6
7
8
9
10
MGM212
Fig.2 Pin configuration.
20
19
18
17
16
15
14
13
12
11
GND
V
CCL
OUTL−
INL−
INL+
INR+
INR−
OUTR−
V
CCR
GND
Note
1. Pins 1, 10, 11 and 20 are connected to the leadframe
and also to the substrate. They may be kept floating.
When connected to the ground-plane the PCB can be
used as heatsink.
1998 Mar 25 4
Page 5
Philips Semiconductors Product specification
2 × 1.5 W BTL audio amplifier TDA8542AT
FUNCTIONAL DESCRIPTION
The TDA8542AT is a 2 × 1.5 W BTL audio power amplifier
capable of delivering 2 × 1.5 W output power to an 8 Ω
load at THD = 10% using a 6 V power supply. Using the
MODE pin the device can be switched to standby and
mute condition. The device is protected by an internal
thermal shutdown protection mechanism. The gain can be
set within a range from 6 to 30 dB by external feedback
resistors.
Power amplifier
The power amplifier is a Bridge-Tied Load (BTL) amplifier
with a complementary PNP-NPN output stage.
The voltage loss on the positive supply line is the
saturation voltage of a PNP power transistor, on the
negative side the saturation voltage of a NPN power
transistor. The total voltage loss is <1 V and with a 6 V
supply voltage and an 8 Ω loudspeaker an output power of
1.5 W can be delivered.
Mode select pin
The device is in the standby mode (with a very low current
consumption) if the voltage at the MODE pin is
>(VCC− 0.5 V), or if this pin is floating. At a MODE voltage
level of less than 0.5 V the amplifier is fully operational.
In the range between 1.5 V and VCC− 1.5 V the amplifier
is in mute condition. The mute condition is useful to
suppress plop noise at the output caused by charging of
the input capacitor.
Headphone connection
A headphone can be connected to the amplifier using two
coupling capacitors for each channel. The common GND
pin of the headphone is connected to the ground of the
amplifier (see Fig.14). In this case the BTL/SE pin must be
either on a logic HIGH level or not connected at all.
The two coupling capacitors can be omitted if it is allowed
to connect the common GND pin of the headphone jack
not to ground, but to a voltage level of
1
⁄2VCC (see Fig.14).
In this case the BTL/SE pin must be either on a logic LOW
level or connected to ground. If the BTL/SE pin is on a
LOW level, the power amplifier for the positive
loudspeaker terminal is always in mute condition.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
V
I
I
ORM
T
stg
T
amb
V
sc
P
tot
supply voltage operating −0.3 +18 V
input voltage −0.3 VCC+ 0.3 V
repetitive peak output current − 1A
storage temperature non-operating −55 +150 °C
operating ambient temperature −40 +85 °C
AC and DC short-circuit safe voltage − 10 V
total power dissipation − 2.2 W
QUALITY SPECIFICATION
In accordance with
“SNW-FQ-611-E”
.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient in free air 60 K/W
1998 Mar 25 5
Page 6
Philips Semiconductors Product specification
2 × 1.5 W BTL audio amplifier TDA8542AT
DC CHARACTERISTICS
V
=6V; T
CC
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CC
I
q
I
stb
V
O
V
I
IN+
V
I
MODE
V
I
BTL/SE
OUT+
, I
IN−
MODE
BTL/SE
− V
=25°C; RL=8Ω; V
amb
= 0 V; measured in test circuit Fig.3; unless otherwise specified.
MODE
supply voltage operating 2.2 6 18 V
quiescent current RL= ∞; note 1 − 15 22 mA
standby current V
MODE=VCC
−−10 µA
DC output voltage note 2 − 2.2 − V
differential output voltage offset −−50 mV
OUT−
input bias current −−500 nA
input voltage mode select operating 0 − 0.5 V
mute 1.5 − V
standby V
input current mode select 0 < V
MODE<VCC
− 0.5 − V
CC
−−20 µA
CC
CC
input voltage BTL/SE pin single-ended 0 − 0.6 V
input current BTL/SE pin V
BTL 2 − V
=0 −−100 µA
BTL/SE
CC
− 1.5 V
V
V
Notes
1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal
to the DC output offset voltage divided by R
.
L
2. The DC output voltage with respect to ground is approximately1⁄2VCC.
1998 Mar 25 6
Page 7
Philips Semiconductors Product specification
2 × 1.5 W BTL audio amplifier TDA8542AT
AC CHARACTERISTICS
V
=6V; T
CC
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
P
o
THD total harmonic distortion P
G
v(cl)
Z
i(dif)
V
n(o)
SVRR supply voltage ripple rejection note 3 50 −−dB
V
o(mute)
α
cs
Notes
=25°C; RL=8Ω; f = 1 kHz; V
amb
= 0 V; measured in test circuit Fig.3; unless otherwise specified.
MODE
output power THD = 10% 1.2 1.5 − W
THD = 0.5% 0.9 1.1 − W
= 0.4 W − 0.15 0.3 %
o
closed-loop voltage gain note 1 6 − 30 dB
differential input impedance − 100 − kΩ
noise output voltage note 2 −−100 µV
note 4 40 −−dB
output voltage in mute condition note 5 −−200 µV
channel separation 40 −−dB
1. Gain of the amplifier is in test circuit of Fig.3.
R2
2
×
------- R1
2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a
source impedance of R
=0Ω at the input.
S
3. Supply voltage ripple rejection is measured at the output, with a source impedance of RS=0Ω at the input.
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to
the positive supply rail.
4. Supply voltage ripple rejection is measured at the output, with a source impedance of RS=0Ω at the input.
The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS),
which is applied to the positive supply rail.
5. Output voltage in mute position is measured with a 1 V (RMS) input voltage in a bandwidth of 20 kHz, so including
noise.
1998 Mar 25 7
Page 8
Philips Semiconductors Product specification
2 × 1.5 W BTL audio amplifier TDA8542AT
TEST AND APPLICATION INFORMATION
Test conditions
Because the application can be either Bridge-Tied Load
(BTL) or Single-Ended (SE), the curves of each application
are shown separately.
The thermal resistance = 60 K/W; the maximum sine wave
power dissipation for T
For T
150 60–
----------------------
=60°C the maximum total power dissipation is:
amb
60
1.5 W=
=25°C is:
amb
150 25–
---------------------60
2.1 W=
BTL application
=25°C if not specially mentioned, VCC=6V,
T
amb
f = 1 kHz, RL=8Ω, Gv= 20 dB, audio band-pass
22 Hz to 22 kHz.
The BTL application diagram is illustrated in Fig.3.
The quiescent current has been measured without any
load impedance. The total harmonic distortion as a
function of frequency was measured with a low-pass filter
of 80 kHz. The value of capacitor C3 influences the
behaviour of the SVRR at low frequencies, increasing the
value of C3 increases the performance of the SVRR.
The figure of the mode select voltage (Vms) as a function
of the supply voltage shows three areas; operating, mute
and standby. It shows, that the DC-switching levels of the
mute and standby respectively depends on the supply
voltage level.
Thermal behaviour
The measured thermal resistance of the IC package is
highly dependent on the configuration and size of the
application board. Data may not be comparable between
different semiconductors manufacturers because the
application boards and test methods are not (yet)
standardized. Also, the thermal performance of packages
for a specific application may be different than presented
here, because the configuration of the application boards
(copper area) may be different.
Philips Semiconductors uses FR-4 type application boards
with 1 oz copper traces with solder coating.
The measurements have been carried out with vertical
placed boards.
Using a practical PCB layout with wider copper tracks and
some copper area to the IC pins and just under the IC
(see Fig.22), the thermal resistance from junction to
ambient can be reduced to approximately 56 K/W.
For T
amb(max)
at this PCB layout is:
For the application V
=50°C the maximum total power dissipation
150 50–
---------------------- 56
= 6 V and RL=8Ω the worst case
CC
1.79 W=
sine wave dissipation is 1.75 W.
SE application
T
=25°C if not specially mentioned, VCC= 7.5 V,
amb
f = 1 kHz, RL=4Ω, Gv= 20 dB, audio band-pass
22 Hz to 22 kHz.
The SE application diagram is illustrated in Fig.14.
If the BTL/SE pin (pin 6) is connected to ground, the
positive outputs (pins 3 and 8) will be in mute condition
with a DC level of1⁄2VCC. When a headphone is used
(RL≥ 25 Ω) the SE headphone application can be used
without output coupling capacitors; load between negative
output and one of the positive outputs (e.g. pin 3) as
common pin.
Increasing the value of electrolytic capacitor C3 will result
in a better channel separation. Because the positive output
is not designed for high output current (2 × Io) at low load
impedance (≤16 Ω), the SE application with output
capacitors connected to ground is advised. The capacitor
value of C4/C5 in combination with the load impedance
determines the low frequency behaviour. The THD as a
function of frequency was measured using a low-pass filter
of 80 kHz. The value of capacitor C3 influences the
behaviour of the SVRR at low frequencies, increasing the
value of C3 increases the performance of the SVRR.
General remark
The frequency characteristic can be adapted by
connecting a small capacitor across the feedback resistor.
To improve the immunity of HF radiation in radio circuit
applications, a small capacitor can be connected in
parallel with the feedback resistor (56 kΩ); this creates a
low-pass filter.
1998 Mar 25 8
Page 9
Philips Semiconductors Product specification
2 × 1.5 W BTL audio amplifier TDA8542AT
BTL APPLICATION
handbook, full pagewidth
1 µF
R1
10 kΩ
V
iL
1 µF
R3
10 kΩ
V
iR
Gain left 2
Gain right 2
Pins 1,10, 11 and 20 connected to ground.
R2
×=
------- R1
R4
×=
------- R3
R2
R4
50 kΩ
C3
47 µF
50 kΩ
OUTR
19 12
−
INL
17
+
INL
16
−
TDA8542AT
−
INR
14
+
INR
15
SVR
5
MODE
4
BTL/SE
6
29
Fig.3 BTL application.
GND
V
CC
100 nF 100 µF
−
OUTL
18
R
+
OUTL
3
−
OUTR
13
+
OUTR
8
MGM213
L
R
L
30
handbook, halfpage
I
q
(mA)
20
10
0
0
RI = ∞.
MGD890
420
81216
VCC (V)
10
handbook, halfpage
THD
(%)
1
−1
10
−2
10
−2
10
f = 1 kHz, Gv=20dB.
(1) VCC= 6 V, RL=8Ω.
(2) VCC= 7.5 V, RL=16Ω.
Fig.4 Iq as a function of VCC.
(1)
(2)
−1
10
110
Po (W)
Fig.5 THD as a function of Po.
MGM214
1998 Mar 25 9
Page 10
Philips Semiconductors Product specification
2 × 1.5 W BTL audio amplifier TDA8542AT
10
handbook, halfpage
THD
(%)
1
−1
10
−2
10
10 10
Po= 0.5 W, Gv= 20 dB.
(1) VCC= 6 V, RL=8Ω.
(2) VCC= 7.5 V, RL=16Ω.
Fig.6 THD as a function of frequency.
MGD892
−60
handbook, halfpage
α
cs
(dB)
MGD893
(1)
−70
(2)
(1)
−80
(2)
(3)
−90
2
3
10
4
10
f (Hz)
5
10
−100
10 10
2
3
10
4
10
f (Hz)
5
10
VCC= 6 V, Vo= 2 V, RL=8Ω.
(1) Gv=30dB.
(2) Gv=20dB.
(3) Gv= 6 dB.
Fig.7 Channel separation as a function of
frequency.
−20
handbook, halfpage
SVRR
(dB)
MGD894
−40
(1)
(2)
−60
−80
10 10
2
10
(3)
3
4
10
f (Hz)
5
10
VCC= 6 V, Rs=0Ω, Vr100 mV.
(1) Gv=30dB.
(2) Gv=20dB.
(3) Gv= 6 dB.
Fig.8 SVRR as a function of frequency.
1998 Mar 25 10
2.5
handbook, halfpage
P
o
(W)
2
1.5
1
0.5
0
048
THD = 10%.
(1) RL=8Ω.
(2) RL=16Ω.
(1) (2)
VCC (V)
Fig.9 Po as a function of VCC.
MGD895
12
Page 11
Philips Semiconductors Product specification
2 × 1.5 W BTL audio amplifier TDA8542AT
handbook, halfpage
3
P
(W)
2
1
0
0
(1) RL=8Ω.
(2) RL=16Ω.
(1) (2)
4812
MGD896
VCC (V)
Fig.10 Worst case power dissipation as a function
of VCC.
handbook, halfpage
3
P
(W)
2
1
0
0
0.5 2.51 1.5 2
f = 1 kHz; Gv=20dB.
(1) VCC= 6 V, RL=8Ω.
(2) VCC= 7.5 V, RL=16Ω.
(1)
(2)
Fig.11 Power dissipation as a function of Po.
MGM215
Po (W)
10
handbook, halfpage
V
o
(V)
1
−1
10
−2
10
−3
10
−4
10
−5
10
−6
10
−1
10
Band-pass = 22 Hz to 22 kHz.
(1) VCC=3V.
(2) VCC=5V.
(3) VCC=12V.
Fig.12 Vo as a function of Vms.
(1) (2) (3)
1
MGD898
10 10
Vms (V)
mute
12
MGL210
operating
VP (V)
16
16
handbook, halfpage
V
MODE
(V)
12
8
4
2
0
048
Fig.13 V
MODE
standby
as a function of VP.
1998 Mar 25 11
Page 12
Philips Semiconductors Product specification
2 × 1.5 W BTL audio amplifier TDA8542AT
SE APPLICATION
handbook, full pagewidth
1 µF
10 kΩ
V
iL
1 µF
10 kΩ
V
iR
Gain left
Gain right
R2
=
------- R1
R4
=
------- R3
Pins 1, 10, 11 and 20 connected to ground.
R1
R3
R2
R4
100 kΩ
C3
47 µF
100 kΩ
19 12
17
16
TDA8542AT
14
15
5
4
6
29
OUTR
−
INR
INR
MODE
BTL/SE
INL
INL
SVR
−
+
−
+
GND
Fig.14 Single-ended application.
V
CC
100 nF
−
OUTL
18
C4
470 µF
+
OUTL
3
−
OUTR
13
C5
470 µF
+
OUTR
8
MGM216
100 µF
RL = 8 Ω
RL = 8 Ω
10
handbook, halfpage
THD
(%)
1
−1
10
−2
10
−2
10
f = 1 kHz, Gv=20dB.
(1) VCC= 7.5 V, RL=4Ω.
(2) VCC= 9 V, RL=8Ω.
(3) VCC= 12 V, RL=16Ω.
Fig.15 THD as a function of Po.
MGD899
10
handbook, halfpage
THD
(%)
MGD900
1
(1)
(2)
(3)
−1
10
1
Po (W)
10
−1
10
−2
10
10 10
(1)
(2)
(3)
2
3
10
4
10
f (Hz)
5
10
Po= 0.5 W, Gv= 20 dB.
(1) VCC= 7.5 V, RL=4Ω.
(2) VCC= 9 V, RL=8Ω.
(3) VCC= 12 V, RL=16Ω.
Fig.16 THD as a function of frequency.
1998 Mar 25 12
Page 13
Philips Semiconductors Product specification
2 × 1.5 W BTL audio amplifier TDA8542AT
−20
handbook, halfpage
α
cs
(dB)
−40
(1)
−60
(2)
(3)
−80
−100
10
2
10
(4)
(5)
3
10
4
10
Vo= 1 V, Gv=20dB.
(1) VCC= 5 V, RL=32Ω, to buffer.
(2) VCC= 7.5 V, RL=4Ω.
(3) VCC= 9 V, RL=8Ω.
(4) VCC= 12 V, RL=16Ω.
(5) VCC= 5 V, RL=32Ω.
Fig.17 Channel separation as a function of
frequency.
MGD901
f (Hz)
−20
handbook, halfpage
MGD902
SVRR
(dB)
−40
(1)
(2)
−60
(3)
5
10
−80
10 10
2
3
10
4
10
f (Hz)
5
10
RS=0Ω, Vr= 100 mV.
(1) Gv=24dB.
(2) Gv=20dB.
(3) Gv= 0 dB.
Fig.18 SVRR as a function of frequency.
handbook, halfpage
2
P
o
(W)
1.6
1.2
0.8
0.4
0
0
THD = 10%.
(1) RL=4Ω.
(2) RL=8Ω.
(3) RL=16Ω.
(1) (2) (3)
48
12
VCC (V)
Fig.19 Po as a function of VCC.
MGD903
handbook, halfpage
3
MGM217
P
(W)
2
(1) (2) (3)
1
0
16
0
48
VCC (V)
1612
THD = 10%.
(1) RL=4Ω.
(2) RL=8Ω.
(3) RL=16Ω.
Fig.20 Worst case power dissipation as a function
of VCC.
1998 Mar 25 13
Page 14
Philips Semiconductors Product specification
2 × 1.5 W BTL audio amplifier TDA8542AT
2.4
handbook, halfpage
P
(W)
1.6
0.8
0
0
f = 1 kHz.
(1) VCC= 12 V, RL=16Ω.
(2) VCC= 7.5 V, RL=4Ω.
(3) VCC= 9 V, RL=8Ω.
Fig.21 P as a function of Po.
MGD905
(1)
(2)
(3)
0.4 0.8 1.6
1.2
Po (W)
1998 Mar 25 14
Page 15
Philips Semiconductors Product specification
2 × 1.5 W BTL audio amplifier TDA8542AT
handbook, full pagewidth
TDA
8542AT
IN1
IN2
a. Top view of copper.
+V
CC
−OUT1 +OUT1
56 kΩ
1 µF
11 kΩ
11 kΩ
56 kΩ
1 µF
−OUT2 +OUT2
100 µF
100 nF
20 1
11 10
TDA8542AT
b. Top view with components.
GND
10 kΩ
10 kΩ
47 µF
TDA
8542AT
MODE
B/S
CIC
Nijmegen
MGM218
Fig.22 Printed-circuit board layout (BTL).
1998 Mar 25 15
Page 16
Philips Semiconductors Product specification
2 × 1.5 W BTL audio amplifier TDA8542AT
PACKAGE OUTLINE
SO20: plastic small outline package; 20 leads; body width 7.5 mm
D
c
y
Z
20
pin 1 index
1
e
11
A
2
10
w M
b
p
SOT163-1
E
H
E
Q
A
1
L
p
L
detail X
(A )
A
X
v M
A
A
3
θ
0 5 10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
mm
OUTLINE
VERSION
SOT163-1
A
max.
2.65
0.10
A
0.30
0.10
0.012
0.004
1
A2A3b
2.45
0.25
2.25
0.096
0.01
0.089
IEC JEDEC EIAJ
075E04 MS-013AC
p
0.49
0.36
0.019
0.014
0.32
0.23
0.013
0.009
UNIT
inches
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
(1)E(1) (1)
cD
13.0
7.6
7.4
0.30
0.29
1.27
0.050
12.6
0.51
0.49
REFERENCES
1998 Mar 25 16
eHELLpQ
10.65
10.00
0.419
0.394
1.4
0.055
1.1
0.4
0.043
0.016
1.1
1.0
0.043
0.039
PROJECTION
0.25
0.25 0.1
0.01
0.01
EUROPEAN
ywv θ
Z
0.9
0.4
8
0.004
ISSUE DATE
0.035
0.016
95-01-24
97-05-22
0
o
o
Page 17
Philips Semiconductors Product specification
2 × 1.5 W BTL audio amplifier TDA8542AT
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
“IC Package Databook”
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
(order code 9398 652 90011).
Wave soldering
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
1998 Mar 25 17
Page 18
Philips Semiconductors Product specification
2 × 1.5 W BTL audio amplifier TDA8542AT
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Mar 25 18
Page 19
Philips Semiconductors Product specification
2 × 1.5 W BTL audio amplifier TDA8542AT
NOTES
1998 Mar 25 19
Page 20
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TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
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MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
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Tel. +1 800 234 7381
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Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997 SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
Printed in The Netherlands 545102/25/02/pp20 Date of release: 1998 Mar 25 Document order number: 9397 750 03349
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