Datasheet TDA8541T-N1-S30, TDA8541T-N1, TDA8541-N1 Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1997 Feb 19
File under Integrated Circuits, IC01

1998 Apr 01

INTEGRATED CIRCUITS

TDA8541

1 W BTL audio amplifier

1998 Apr 01 2

Philips Semiconductors Product specification

1 W BTL audio amplifier TDA8541

FEATURES

• Flexibility in use

• Few external components

• Low saturation voltage of output stage

• Gain can be fixed with external resistors

• Standby mode controlled by CMOS compatible levels

• Low standby current

• No switch-on/switch-off plops

• High supply voltage ripple rejection

• Protected against electrostatic discharge

• Outputs short-circuit safe to ground, V

CC

and across the

load

• Thermally protected.

GENERAL DESCRIPTION

The TDA8541(T) is a one channel audio power amplifier
for an output power of 1 W with an 8 Ω load at a 5 V
supply. The circuit contains a BTL amplifier with a
complementary PNP-NPN output stage and standby/mute
logic. The TDA8541T comes in an 8 pin SO package and
the TDA8541 in an 8 pin DIP package.

APPLICATIONS

• Portable consumer products

• Personal computers

• Telephony.

QUICK REFERENCE DATA

ORDERING INFORMATION

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CC

supply voltage 2.2 5 18 V

I

q

quiescent current VCC=5V − 812mA

I

stb

standby current −−10 µA

P

o

output power THD = 10%; RL=8Ω; VCC=5V 1 1.2 − W

THD total harmonic distortion P

o

= 0.5 W − 0.15 − %

SVRR supply voltage ripple rejection 50 −−dB

TYPE

NUMBER

PACKAGE

NAME DESCRIPTION VERSION

TDA8541T SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
TDA8541 DIP8 plastic dual in-line package; 8 leads (300 mil) SOT97-1

1998 Apr 01 3

Philips Semiconductors Product specification

1 W BTL audio amplifier TDA8541

BLOCK DIAGRAM

Fig.1 Block diagram.

handbook, halfpage

MGB972

4

STANDBY/MUTE LOGIC

3

6

2

1

7

8

5

R

R

20 kΩ

20 kΩ

IN−
IN+

V

CC

SVR

MODE

OUT−

OUT+

GND

−

−
+

−

−
+

TDA8541

PINNING

SYMBOL PIN DESCRIPTION

MODE 1 operating mode select

(standby, mute, operating)

SVR 2 half supply voltage, decoupling

ripple rejection
IN+ 3 positive input
IN− 4 negative input
OUT− 5 negative loudspeaker terminal
V

CC

6 supply voltage
GND 7 ground
OUT+ 8 positive loudspeaker terminal

Fig.2 Pin configuration.

handbook, halfpage

1
2
3
4

8
7
6
5

MGB971

TDA8541

OUT+
GNDSVR
V

CC

OUT−

IN−

IN+

MODE

FUNCTIONAL DESCRIPTION

The TDA8541(T) is a BTL audio power amplifier capable
of delivering 1 W output power to an 8 Ω load at
THD = 10% using a 5 V power supply. Using the MODE
pin the device can be switched to standby and mute
condition. The device is protected by an internal thermal
shutdown protection mechanism. The gain can be set
within a range from 6 dB to 30 dB by external feedback
resistors.

Power amplifier

The power amplifier is a Bridge Tied Load (BTL) amplifier
with a complementary PNP-NPN output stage.
The voltage loss on the positive supply line is the
saturation voltage of a PNP power transistor, on the
negative side the saturation voltage of an NPN power
transistor. The total voltage loss is <1 V and with a 5 V
supply voltage and an 8 Ω loudspeaker an output power of
1 W can be delivered.

Mode select pin

The device is in standby mode (with a very low current
consumption) if the voltage at the MODE pin is
>(VCC− 0.5 V), or if this pin is floating. At a MODE voltage
level of less than 0.5 V the amplifier is fully operational.
In the range between 1.5 V and VCC− 1.5 V the amplifier
is in mute condition. The mute condition is useful to
suppress plop noise at the output, caused by charging of
the input capacitor.

1998 Apr 01 4

Philips Semiconductors Product specification

1 W BTL audio amplifier TDA8541

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

QUALITY SPECIFICATION

In accordance with

“SNW-FQ-611-E”

. The number of the quality specification can be found in the

“Quality Reference

Handbook”

. The handbook can be ordered using the code 9397 750 00192.

THERMAL CHARACTERISTICS

DC CHARACTERISTICS

V

CC

=5V; T

amb

=25°C; RL=8Ω; V

MODE

= 0 V; measured in test circuit Fig.3; unless otherwise specified.

Notes

1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal
to the DC output offset voltage divided by R

L

.

2. The DC output voltage with respect to ground is approximately 0.5 × VCC.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

supply voltage operating −0.3 +18 V

V

I

input voltage −0.3 VCC+ 0.3 V

I

ORM

repetitive peak output current − 1A

T

stg

storage temperature non-operating −55 +150 °C

T

amb

operating ambient temperature −40 +85 °C

V

psc

AC and DC short-circuit safe voltage − 10 V

P

tot

total power dissipation SO8 − 0.8 W

DIP8 − 1.2 W

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air

TDA8541T (SO8) 160 K/W
TDA8541 (DIP8) 100 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CC

supply voltage operating 2.2 5 18 V

I

q

quiescent current RL= ∞; note 1 − 812mA

I

stb

standby current V

MODE=VCC

−−10 µA

V

O

DC output voltage note 2 − 2.2 − V

V

OUT+

− V

OUT−

 differential output voltage offset −−50 mV

I

IN+

, I

IN−

input bias current −−500 nA

V

MODE

input voltage mode select operating 0 − 0.5 V

mute 1.5 − V

CC

− 1.5 V

standby V

CC

− 0.5 − V

CC

V

I

MODE

input current mode select 0 < V

MODE<VCC

−−20 µA

1998 Apr 01 5

Philips Semiconductors Product specification

1 W BTL audio amplifier TDA8541

AC CHARACTERISTICS

V

CC

=5V; T

amb

=25°C; RL=8Ω; f = 1 kHz; V

MODE

= 0 V; measured in test circuit Fig.3; unless otherwise specified.

Notes

1. Gain of the amplifier is 2 × R2/R1 in test circuit of Fig.3.

2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a
source impedance of R

S

=0Ω at the input.

3. Supply voltage ripple rejection is measured at the output, with a source impedance of RS=0Ω at the input.
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to
the positive supply rail.

4. Supply voltage ripple rejection is measured at the output, with a source impedance of RS=0Ω at the input.
The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS),
which is applied to the positive supply rail.

5. Output voltage in mute position is measured with an input voltage of 1 V (RMS) in a bandwidth of 20 kHz, so including
noise.

SYMBOL P ARAMETER CONDITIONS MIN. TYP . MAX. UNIT

P

o

output power THD = 10% 1 1.2 − W

THD = 0.5% 0.6 0.9 − W

THD total harmonic distortion P

o

= 0.5 W − 0.15 0.3 %

G

v

closed loop voltage gain note 1 6 − 30 dB

Z

i

differential input impedance − 100 − kΩ

V

no

noise output voltage note 2 −−100 µV

SVRR supply voltage ripple rejection note 3 50 −−dB

note 4 40 −−dB

V

o

output voltage in mute condition note 5 −−200 µV

1998 Apr 01 6

Philips Semiconductors Product specification

1 W BTL audio amplifier TDA8541

TEST AND APPLICATION INFORMATION
Test conditions

Because the application can be either Bridge-Tied Load
(BTL) or Single-Ended (SE), the curves of each application
are shown separately.

The thermal resistance = 100 K/W for the DIP8 envelope;
the maximum sine wave power dissipation for
T

amb

=25°C is:

.

For T

amb

=60°C the maximum total power dissipation is:

.

BTL application

T

amb

=25°C if not specially mentioned, VCC=5V,
f = 1 kHz, RL=8Ω, Gv= 20 dB, audio band-pass
22 Hz to 22 kHz.

The BTL application diagram is shown in Fig.3.
The quiescent current has been measured without any

load impedance. The total harmonic distortion as a
function of frequency was measured with a low-pass filter
of 80 kHz. The value of capacitor C2 influences the
behaviour of the SVRR at low frequencies, increasing the
value of C2 increases the performance of the SVRR.
The figure of the mode select voltage (Vms) as a function
of the supply voltage shows three areas; operating, mute
and standby. It shows, that the DC-switching levels of the
mute and standby respectively depends on the supply
voltage level.

150 25–

100

----------------------

1.25 W=

150 60–

100

----------------------

0.9 W=

SE application

T

amb

=25°C if not specially mentioned, VCC= 7.5 V,
f = 1 kHz, RL=4Ω, Gv= 20 dB, audio band-pass
22 Hz to 22 kHz.

The SE application diagram is shown in Fig.13.
The capacitor value of C3 in combination with the load

impedance determines the low frequency behaviour.
The total harmonic distortion as a function of frequency
was measured with low-pass filter of 80 kHz. The value of
capacitor C2 influences the behaviour of the SVRR at low
frequencies, increasing the value of C2 increases the
performance of the SVRR.

General remark

The frequency characteristic can be adapted by
connecting a small capacitor across the feedback resistor.
To improve the immunity of HF radiation in radio circuit
applications, a small capacitor can be connected in
parallel with the feedback resistor (56 kΩ); this creates a
low-pass filter.

1998 Apr 01 7

Philips Semiconductors Product specification

1 W BTL audio amplifier TDA8541

BTL APPLICATION

Fig.3 BTL application.

handbook, full pagewidth

MBH881

4

V

CC

V

in

OUT

−

IN

−

IN

+

OUT

+

5

100 nF 100 µF

6

7

TDA8541

3

GND

R

L

SVR

2
1

MODE

8

C2

47 µF

1 µF

C1

R1

R2

11 kΩ

56 kΩ

Gain 2

R2
R1

------- -

×=

Fig.4 Iq as a function of VCC.

RL= ∞.

handbook, halfpage

0

I

q

(mA)

VCC (V)

15

10

5

0

420

81216

MGD876

Fig.5 THD as a function of Po.

handbook, halfpage

10

1

THD

(%)

10

−1

10

−2

MGD877

10

−2

10

−1

1

Po (W)

10

(1)

(2)

f =1 kHz, Gv=20dB.
(1) VCC= 5V, RL=8Ω.
(2) VCC= 9V, RL=16Ω.

1998 Apr 01 8

Philips Semiconductors Product specification

1 W BTL audio amplifier TDA8541

Fig.6 THD as a function of frequency.

handbook, halfpage

10

1

10

−1

10

−2

MGD878

10 10

2

10

3

10

4

THD

(%)

f (Hz)

10

5

(1)

(2)

Po= 0.5W, Gv= 20dB.
(1) VCC= 5V, RL=8Ω.
(2) VCC= 9V, RL=16Ω.

Fig.7 SVRR as a function of frequency.

handbook, halfpage

−80

−60

−40

−20

MGD879

10 10

2

10

3

SVRR

(dB)

f (Hz)

10

4

10

5

(1)

(2)
(3)

VCC= 5V, 8 Ω, Rs=0Ω, Vi= 100mV.
(1) Gv=30dB.
(2) Gv=20dB.
(3) Gv= 6dB.

Fig.8 Po as a function of VCC.

THD =10%.
(1) RL=8Ω.
(2) RL=16Ω.

handbook, halfpage

0

(1)

(2)

48

P

o

(W)

VCC (V)

12

2.5

0

2

1.5

1

0.5

MGD880

Fig.9 Worst case power dissipation as a function

of VCC.

handbook, halfpage

0

(1)

(2)

4

P

(W)

VCC (V)

812

2

1.5

0.5

0

1

MGD881

(1) RL=8Ω.
(2) RL=16Ω.

1998 Apr 01 9

Philips Semiconductors Product specification

1 W BTL audio amplifier TDA8541

Fig.10 P as a function of Po.

Sine wave of 1 kHz.
(1) VCC= 9V, RL=16Ω.
(2) VCC= 5V, RL=8Ω.

handbook, halfpage

0 0.5 2.5

1.6

1.2

0.4

0

0.8

1 1.5 2

P

(W)

Po (W)

MGD882

(1)

(2)

Fig.11 Vo as a function of Vms.

Band-pass =22 Hz to 22 kHz.
(1) VCC=3V.
(2) VCC=5V.
(3) VCC=12V.

handbook, halfpage

10

1

10

−1

10

−2

10

−3

10

−5

10

−4

10

−6

MGD883

10

−1

1

V

o

(V)

Vms (V)

10 10

2

(1) (2) (3)

Fig.12 Vms as a function of VP.

handbook, halfpage

048

V

ms

(V)

16

16

12

4

0

8

12

VP (V)

MGL070

operating

mute

standby

1998 Apr 01 10

Philips Semiconductors Product specification

1 W BTL audio amplifier TDA8541

SE APPLICATION

Fig.13 SE application.

handbook, full pagewidth

MBH882

4

V

CC

V

in

OUT

−

IN

−

IN

+

OUT

+

5

100 nF 100 µF

470 µF

C3

6

7

TDA8541

3

GND

R

L

SVR

2
1

MODE

8

C2

47 µF

1 µF

C1

R1

R2

11 kΩ

110 kΩ

Gain

R2
R1

------- -

=

Fig.14 THD as a function of Po.

handbook, halfpage

10

1

THD

(%)

10

−2

10

−1

MGD884

10

−2

10

−1

1

Po (W)

10

(1)

(3)

(2)

f = 1 kHz, Gv=20dB.
(1) VCC= 7.5 V, RL=4Ω.
(2) VCC= 9 V, RL=8Ω.
(3) VCC= 12 V, RL=16Ω.

Fig.15 THD as a function of frequency.

Po= 0.5 W, Gv= 20 dB.
(1) VCC= 7.5 V, RL=4Ω.
(2) VCC= 9 V, RL=8Ω.
(3) VCC= 12 V, RL=16Ω.

handbook, halfpage

10

1

THD

(%)

f (Hz)

10

−1

10

−2

MGD885

10 10

2

10

3

10

4

10

5

(1)

(2)
(3)

1998 Apr 01 11

Philips Semiconductors Product specification

1 W BTL audio amplifier TDA8541

Fig.16 SVRR as a function of frequency.

VCC= 7.5 V, RL=4Ω, Rs=0Ω, Vi= 100mV.
(1) Gv=24dB.
(2) Gv=20dB.
(3) Gv= 0 dB.

handbook, halfpage

−80

−60

−40

−20

MGD886

10 10

2

10

3

SVRR

(dB)

f (Hz)

10

4

10

5

(1)

(3)

(2)

Fig.17 Po as a function of VCC.

(1) THD = 10%, RL=4Ω.
(2) THD = 10%, RL=8Ω.
(3) THD = 10%, RL=16Ω.

handbook, halfpage

04

(1) (2)

(3)

8

P

o

(W)

VCC (V)

16

2

0

1.6

12

1.2

0.8

0.4

MGD887

Fig.18 Worst case power dissipation as a function

of VCC.

(1) RL=4Ω.
(2) RL=8Ω.
(3) RL=16Ω.

handbook, halfpage

04

P

(W)

VCC (V)

816

1.6

1.2

(1)

(2) (3)

0.4

0

0.8

12

MGD888

Fig.19 Power dissipation as a function of Po.

(1) VCC= 7.5 V, RL=4Ω.
(2) VCC= 12 V, RL=16Ω.
(3) VCC= 9 V, RL=8Ω.

handbook, halfpage

0

(1)

(3)

(2)

1.2

0.8

0.4

0

0.4 0.8 1.6

1.2

P

(W)

Po (W)

MGD889

1998 Apr 01 12

Philips Semiconductors Product specification

1 W BTL audio amplifier TDA8541

handbook, full pagewidth

MBH920

MS

IN

OUT

+

+

V

P

OUT

−

100 µF

100 nF

56 kΩ

11 kΩ

6.8 kΩ

1

4

8

5

6.8 kΩ

47 µF

1 µF

TDA8541

Fig.20 Printed-circuit board layout (BTL and SE).

a. Top view.

b. Component side.

1998 Apr 01 13

Philips Semiconductors Product specification

1 W BTL audio amplifier TDA8541

PACKAGE OUTLINES

UNIT

A

max.

A

1

A2A

3

b

p

cD

(1)E(2)

(1)

eHELLpQZywv θ

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

inches

1.75

0.25

0.10

1.45

1.25

0.25

0.49

0.36

0.25

0.19

5.0

4.8

4.0

3.8

1.27

6.2

5.8

1.05

0.7

0.6

0.7

0.3

8
0

o
o

0.25 0.10.25

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Notes

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

1.0

0.4

SOT96-1

X

w M

θ

A

A

1

A

2

b

p

D

H

E

L

p

Q

detail X

E

Z

e

c

L

v M

A

(A )

3

A

4

5

pin 1 index

1

8

y

076E03S MS-012AA

0.069

0.010

0.004

0.057

0.049

0.01

0.019

0.014

0.0100

0.0075

0.20

0.19

0.16

0.15

0.050

0.244

0.228

0.028

0.024

0.028

0.012

0.010.010.041 0.004

0.039

0.016

0 2.5 5 mm

scale

SO8: plastic small outline package; 8 leads; body width 3.9 mm

SOT96-1

95-02-04
97-05-22

1998 Apr 01 14

Philips Semiconductors Product specification

1 W BTL audio amplifier TDA8541

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

SOT97-1

92-11-17
95-02-04

UNIT

A

max.

12

b

1

(1) (1)

(1)

b

2

cD E e M

Z

H

L

mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

min.

A

max.

b

max.

w

M

E

e

1

1.73

1.14

0.53

0.38

0.36

0.23

9.8

9.2

6.48

6.20

3.60

3.05

0.2542.54 7.62

8.25

7.80

10.0

8.3

1.154.2 0.51 3.2

inches

0.068

0.045

0.021

0.015

0.014

0.009

1.07

0.89

0.042

0.035

0.39

0.36

0.26

0.24

0.14

0.12

0.010.10 0.30

0.32

0.31

0.39

0.33

0.0450.17 0.020 0.13

b

2

050G01 MO-001AN

M

H

c

(e )

1

M

E

A

L

seating plane

A

1

w M

b

1

e

D

A

2

Z

8

1

5

4

b

E

0 5 10 mm

scale

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

pin 1 index

DIP8: plastic dual in-line package; 8 leads (300 mil)

SOT97-1

1998 Apr 01 15

Philips Semiconductors Product specification

1 W BTL audio amplifier TDA8541

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

(order code 9398 652 90011).

DIP

SOLDERING BY DIPPING OR BY WA VE
The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T

stg max

). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

R

EPAIRING SOLDERED JOINTS

Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

SO

REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO

packages.
Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

W

AVE SOLDERING

Wave soldering techniques can be used for all SO
packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

R

EPAIRING SOLDERED JOINTS

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1998 Apr 01 16

Philips Semiconductors Product specification

1 W BTL audio amplifier TDA8541

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

1998 Apr 01 17

Philips Semiconductors Product specification

1 W BTL audio amplifier TDA8541

NOTES

1998 Apr 01 18

Philips Semiconductors Product specification

1 W BTL audio amplifier TDA8541

NOTES

1998 Apr 01 19

Philips Semiconductors Product specification

1 W BTL audio amplifier TDA8541

NOTES

Internet: http://www.semiconductors.philips.com

Philips Semiconductors – a worldwide company

© Philips Electronics N.V. 1998 SCA59
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.

Middle East: see Italy
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Pakistan: see Singapore
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Printed in The Netherlands 545102/00/05/pp20 Date of release: 1998 Apr 01 Document order number: 9397 750 03352