Datasheet TDA8511J-N1 Datasheet (Philips)

Page 1
DATA SH EET
Preliminary specification Supersedes data of 1999 Jun 14 File under Integrated Circuits, IC01
2000 Mar 10
INTEGRATED CIRCUITS
TDA8511J
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2000 Mar 10 2
Philips Semiconductors Preliminary specification
4 × 13 W single-ended power amplifiers TDA8511J
FEATURES
Requires very few external components
High output power
Fixed gain
Diagnostic facility (distortion, short-circuit and
temperature detection)
Good ripple rejection
Mode select switch (operating, mute and standby)
AC and DC short-circuit safe to ground and to V
P
Low power dissipation in any short-circuit condition
Thermally protected
Reverse polarity safe
Electrostatic discharge protection
No switch-on/switch-off plop
Flexible leads
Low thermal resistance
Identical inputs.
APPLICATIONS
The device is primarily developed for multi-media applications and active speaker systems.
GENERAL DESCRIPTION
The TDA8511Jis an integrated class-B output amplifier in a 17-lead DIL-bent-SIL power package. It contains 4 × 13 W single-ended amplifiers.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
P
supply voltage 6 15 18 V
I
ORM
repetitive peak output current −−4A
I
q(tot)
total quiescent current 80 mA
I
stb
standby current 0.1 100 µA
P
o
output power THD = 10%
R
L
=4Ω−7W
R
L
=2Ω−13 W SVRR supply voltage ripple rejection 46 −−dB V
n(o)
noise output voltage Rs=0Ω−50 −µV
Z
i
input impedance 50 −−k
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
TDA8511J DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1
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Philips Semiconductors Preliminary specification
4 × 13 W single-ended power amplifiers TDA8511J
BLOCK DIAGRAM
Fig.1 Block diagram.
handbook, full pagewidth
mode select
switch
MGL497
output 1
15 k
15 k
x1
VA
stand-by
switch
V
P
mute switch
stand-by reference voltage
5
13
V
P1
V
P2
18 k
2
k
mute switch
VA
C
m
power stage
18 k
mute switch
VA
C
m
power stage
6
8
14
18 k
mute switch
VA
C
m
power stage
18 k
mute switch
VA
C
m
power stage
10
12
2711
ground (signal)
GND1 GND2
power ground (substrate)
output 3
output 4
output 2
input 1
input 3
15
1
TDA8511J
mute reference voltage
input reference voltage
2
k
60 k
60 k
input 2
3
PROTECTIONS
thermal
short-circuit
diagnostic
output
16
4
supply voltage
ripple rejection
input 4
17
2
k
60 k
2
k
60 k
9
not connected
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2000 Mar 10 4
Philips Semiconductors Preliminary specification
4 × 13 W single-ended power amplifiers TDA8511J
PINNING
SYMBOL PIN DESCRIPTION
IN1 1 input 1 SGND 2 signal ground IN2 3 input 2 RR 4 supply voltage ripple rejection V
P1
5 supply voltage OUT1 6 output 1 GND1 7 power ground 1 OUT2 8 output 2 n.c. 9 not connected OUT3 10 output 3 GND2 11 power ground 2 OUT4 12 output 4 V
P2
13 supply voltage MODE 14 mode select switch input IN3 15 input 3 V
DIAG
16 diagnostic output IN4 17 input 4
Fig.2 Pin configuration.
handbook, halfpage
TDA8511J
MGL498
1 2 3 4 5 6 7 8
9 10 11 12 13 14 15 16 17
IN1
SGND
IN2
RR
V
P1
OUT1
GND1
OUT2
n.c.
OUT3
GND2
OUT4
V
P2
MODE
IN3
V
DIAG
IN4
FUNCTIONAL DESCRIPTION
The TDA8511J contains four identical amplifiers and can be used for single-ended applications. The gain of each amplifier is fixed at 20 dB. Special features of the device are:
Mode select switch (pin 14)
Diagnostic output (pin 16).
Mode select switch (pin 14)
Low standby current (<100 µA)
Low switching current (low cost supply switch)
Mute facility.
Toavoidswitch-onplops,itisadvisedtokeeptheamplifier in the mute mode during 100 ms (charging of the input capacitors at pin 1, 3, 15 and pin 17).
This can be achieved by:
Microprocessor control
External timing circuit (see Fig.7).
Diagnostic output (pin 16)
DYNAMIC DISTORTION DETECTOR (DDD) At the onset of clipping of one or more output stages, the
dynamic distortion detector becomes active and pin 16 goes LOW. This information can be used to drive a sound processor or DC volume control to attenuate the input signal and thus limit the distortion. The output level of pin 16 is independent of the number of channels that are clipping (see Fig.3).
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Philips Semiconductors Preliminary specification
4 × 13 W single-ended power amplifiers TDA8511J
SHORT-CIRCUIT PROTECTION When a short-circuit occurs at one or more outputs to
ground or to the supply voltage, the output stages are switched off until the short-circuit is removed and the device is switched on again, with a delay of approximately 20 ms, after removal of the short-circuit. During this short-circuit condition, pin 16 is continuously LOW.
When a short-circuit across the load of one or more channels occurs the output stages are switched off during approximately 20 ms. After that time it is checked during approximately 50 µs to see whether the short-circuit is still present. Due to this duty cycle of 50 µs/20 ms the average current consumption during this short-circuit condition is very low (approximately 40 mA).
During this short-circuit condition, pin 16 is LOW for 20 ms and HIGH for 50 µs (see Fig.4).
The power dissipation in any short-circuit condition is very low.
TEMPERATURE DETECTION When the virtual junction temperature Tvjreaches 150 °C,
pin 16 will be active LOW.
OPEN COLLECTOR OUTPUT Pin 16 is an open collector output, which allows that more
devices can be connected together (pins 16).
Fig.3 Distortion detector waveform.
handbook, halfpage
0
V
P
V
O
t
0
MGA706
V
16
Fig.4 Short-circuit waveform.
handbook, full pagewidth
MGL508
short-circuit over the load
20 ms
50 µs
t
t
V
P
current
in
output
stage
V
16
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Philips Semiconductors Preliminary specification
4 × 13 W single-ended power amplifiers TDA8511J
LIMITING VALUES
In accordance with the absolute maximum system (IEC 134).
THERMAL CHARACTERISTICS
In accordance with IEC 747-1.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
P
supply voltage operating 18 V
no signal 20 V
I
OSM
non-repetitive peak output current 6A
I
ORM
repetitive peak output current 4A
V
psc
AC and DC short-circuit safe voltage 18 V
V
pr
reverse polarity 6V
P
tot
total power dissipation 60 W
T
stg
storage temperature 55 +150 °C
T
amb
operating ambient temperature 40 +85 °C
T
vj
virtual junction temperature 150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient in free air 40 K/W
R
th(j-c)
thermal resistance from junction to case see Fig.5 1.3 K/W
Fig.5 Equivalent thermal resistance network.
handbook, halfpage
3.0 K/W
0.7 K/W
3.0 K/W
virtual junction
output 1 output 2
case
3.0 K/W
0.7 K/W
3.0 K/W
output 3 output 4
MEA860 - 2
0.2 K/W
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Philips Semiconductors Preliminary specification
4 × 13 W single-ended power amplifiers TDA8511J
DC CHARACTERISTICS
VP= 15 V; T
amb
=25°C; measured in Fig.6; unless otherwise specified.
Note
1. The circuit is DC adjusted at V
P
= 6 to 18 V and AC operating at VP= 8.5 to 18 V.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply
V
P
supply voltage note 1 6 15 18 V
I
P
quiescent current 80 160 mA
V
O
DC output voltage 6.9 V
Mode select switch
V
on
switch-on voltage level 8.5 −−V MUTE CONDITION V
mute
mute voltage 3.3 6.4 V V
O
output voltage in mute position V
i(max)
= 1 V; f = 1 kHz −−2mV STANDBY CONDITION V
stb
standby voltage 0 2V
I
stb
standby current −−100 µA
I
sw(on)
switch-on current 12 40 µA
Diagnostic output (pin 16)
V
DIAG
diagnostic output voltage any short-circuit or clipping −−0.6 V
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Philips Semiconductors Preliminary specification
4 × 13 W single-ended power amplifiers TDA8511J
AC CHARACTERISTICS
VP= 15 V; RL=4Ω; f = 1 kHz; T
amb
=25°C; measured in Fig.6; unless otherwise specified.
Notes
1. Output power is measured directly at the output pins of the IC.
2. Frequency response externally fixed.
3. Ripple rejection measured at the output with a source-impedance of 0 , maximum ripple amplitude of 2 V (p-p) and at a frequency between 100 Hz and 10 kHz.
4. Noise measured in a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage independent of R
s
(Vi= 0 V).
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
P
O
output power note 1
THD = 0.5% 4 5.5 W THD = 10% 5.5 7 W
THD total harmonic distortion P
O
=1W 0.06 %
P
O
output power RL=2Ω; note 1
THD = 0.5% 10 W THD = 10% 13 W
f
l
low frequency roll-off at 1 dB; note 2 25 Hz
f
h
high frequency roll-off at 1dB 20 −−kHz
G
v
closed loop voltage gain 19 20 21 dB
SVRR supply voltage ripple rejection note 3
on 48 −−dB mute 46 −−dB standby 80 −−dB
Z
i
input impedance 50 60 75 k
V
n(o)
noise output voltage
on; R
s
=0Ω; note 4 50 −µV
on; R
s
=10kΩ; note 4 70 100 µV
mute; notes 4 and 5 50 −µV
α
CS
channel separation Rs=10k 40 60 dB
∆G
v
channel unbalance −−1dB
Dynamic distortion detector
THD total harmonic distortion V
16
0.6 V;
no short-circuit
10 %
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2000 Mar 10 9
Philips Semiconductors Preliminary specification
4 × 13 W single-ended power amplifiers TDA8511J
TEST/APPLICATION INFORMATION
Fig.6 Application diagram.
handbook, full pagewidth
MGL499
100
nF
16 5 13
220 nF
1
R
L
R
L
R
L
R
L
6
8
711
V
P
TDA8511J
2200
µF
60 k
2
ground (signal)
10
k
9
not connected
3
input 2
60 k
60
k
reference
voltage
220 nF
15
10
60 k
input 3
4
17
12
power ground (substrate)
input 1
supply voltage ripple rejection
input 4
220 nF
V /2
p
1000 µF
220 nF
100
µF
14
diagnostic
1000 µF
1000 µF
1000 µF
mode
switch
Page 10
2000 Mar 10 10
Philips Semiconductors Preliminary specification
4 × 13 W single-ended power amplifiers TDA8511J
Mode select switch
Toavoidswitch-onplops,itisadvisedtokeeptheamplifier in the mute mode during >100 ms (charging of the input capacitors at pins 1, 3, 15 and 17.
The circuit in Fig.7 slowly ramps up the voltage at the mode select switch pin when switching on and results in fast muting when switching off.
Fig.7 Mode select switch circuitry.
handbook, halfpage
100 k
MGA708
47 µF
10 k 100
mode select switch
V
P
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2000 Mar 10 11
Philips Semiconductors Preliminary specification
4 × 13 W single-ended power amplifiers TDA8511J
PACKAGE OUTLINE
REFERENCES
OUTLINE VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT243-1
0 5 10 mm
scale
D
L
E
A
c
A
2
L
3
Q
w M
b
p
1
d
D
Z
e
e
x
h
117
j
E
h
non-concave
97-12-16 99-12-17
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
view B: mounting base side
m
2
e
v M
B
UNIT A e
1
A2bpcD
(1)
E
(1)
Z
(1)
deD
h
LL3m
mm
17.0
15.5
4.6
4.4
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10 2.54
v
0.8
12.2
11.8
1.27
e
2
5.08
2.4
1.6
E
h
6
2.00
1.45
2.1
1.8
3.4
3.1
4.3
12.4
11.0
Qj
0.4w0.03
x
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2000 Mar 10 12
Philips Semiconductors Preliminary specification
4 × 13 W single-ended power amplifiers TDA8511J
SOLDERING Introduction to soldering through-hole mount
packages
This text gives a brief insight to wave, dip and manual soldering.Amorein-depthaccountofsolderingICscanbe found in our
“Data Handbook IC26; Integrated Circuit
Packages”
(document order number 9398 652 90011).
Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board.
Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joints for more than 5 seconds.
Thetotalcontacttimeofsuccessivesolder waves must not exceed 5 seconds.
The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (T
stg(max)
). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit.
Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
PACKAGE
SOLDERING METHOD
DIPPING WAVE
DBS, DIP, HDIP, SDIP, SIL suitable suitable
(1)
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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Philips Semiconductors Preliminary specification
4 × 13 W single-ended power amplifiers TDA8511J
NOTES
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2000 Mar 10 14
Philips Semiconductors Preliminary specification
4 × 13 W single-ended power amplifiers TDA8511J
NOTES
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2000 Mar 10 15
Philips Semiconductors Preliminary specification
4 × 13 W single-ended power amplifiers TDA8511J
NOTES
Page 16
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Internet: http://www.semiconductors.philips.com
2000
69
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