TDA8511JDBS17Pplastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)SOT243-1
2000 Mar 102
Page 3
Philips SemiconductorsPreliminary specification
4 × 13 W single-ended power amplifiersTDA8511J
BLOCK DIAGRAM
V
V
P1
handbook, full pagewidth
input 1
1
60
kΩ
2
kΩ
mute switch
VA
C
m
5
TDA8511J
P2
13
6
output 1
input 2
supply voltage
ripple rejection
input 3
18 kΩ
mute switch
60
kΩ
3
2
kΩ
x1
4
15
60
kΩ
2
kΩ
18 kΩ
stand-by
switch
VA
15 kΩ
15 kΩ
VA
V
P
mute switch
VA
C
m
PROTECTIONS
thermal
short-circuit
mute
reference
voltage
C
power stage
8
output 2
power stage
mode
14
select
stand-by
reference
voltage
mute
switch
m
switch
16
diagnostic
output
10
output 3
18 kΩ
input 4
mute switch
60
kΩ
17
2
kΩ
input
reference
voltage
2711
ground
(signal)
VA
18 kΩ
9
not connected
C
GND1GND2
Fig.1 Block diagram.
2000 Mar 103
power stage
m
12
output 4
power stage
MGL497
power ground (substrate)
Page 4
Philips SemiconductorsPreliminary specification
4 × 13 W single-ended power amplifiersTDA8511J
PINNING
SYMBOLPINDESCRIPTION
IN11input 1
SGND2signal ground
IN23input 2
RR4supply voltage ripple rejection
V
P1
5supply voltage
OUT16output 1
GND17power ground 1
OUT28output 2
n.c.9not connected
OUT310output 3
GND211power ground 2
OUT412output 4
V
P2
13supply voltage
MODE14mode select switch input
IN315input 3
V
DIAG
16diagnostic output
IN417input 4
handbook, halfpage
IN1
SGND
IN2
RR
V
OUT1
GND1
OUT2
n.c.
OUT3
GND2
OUT4
V
MODE
IN3
V
DIAG
IN4
P1
P2
1
2
3
4
5
6
7
8
9
TDA8511J
10
11
12
13
14
15
16
17
MGL498
FUNCTIONAL DESCRIPTION
The TDA8511J contains four identical amplifiers and can
be used for single-ended applications. The gain of each
amplifier is fixed at 20 dB. Special features of the device
are:
• Mode select switch (pin 14)
• Diagnostic output (pin 16).
Mode select switch (pin 14)
• Low standby current (<100 µA)
• Low switching current (low cost supply switch)
• Mute facility.
Toavoidswitch-onplops,itisadvisedtokeeptheamplifier
in the mute mode during ≥100 ms (charging of the input
capacitors at pin 1, 3, 15 and pin 17).
2000 Mar 104
Fig.2 Pin configuration.
This can be achieved by:
• Microprocessor control
• External timing circuit (see Fig.7).
Diagnostic output (pin 16)
DYNAMIC DISTORTION DETECTOR (DDD)
At the onset of clipping of one or more output stages, the
dynamic distortion detector becomes active and pin 16
goes LOW. This information can be used to drive a sound
processor or DC volume control to attenuate the input
signal and thus limit the distortion. The output level of
pin 16 is independent of the number of channels that are
clipping (see Fig.3).
Page 5
Philips SemiconductorsPreliminary specification
4 × 13 W single-ended power amplifiersTDA8511J
SHORT-CIRCUIT PROTECTION
When a short-circuit occurs at one or more outputs to
ground or to the supply voltage, the output stages are
switched off until the short-circuit is removed and the
device is switched on again, with a delay of approximately
20 ms, after removal of the short-circuit. During this
short-circuit condition, pin 16 is continuously LOW.
When a short-circuit across the load of one or more
channels occurs the output stages are switched off during
approximately 20 ms. After that time it is checked during
approximately 50 µs to see whether the short-circuit is still
present. Due to this duty cycle of 50 µs/20 ms the average
current consumption during this short-circuit condition is
very low (approximately 40 mA).
During this short-circuit condition, pin 16 is LOW for 20 ms
and HIGH for 50 µs (see Fig.4).
handbook, halfpage
V
O
0
V
16
V
P
0
MGA706
t
The power dissipation in any short-circuit condition is very
low.
TEMPERATURE DETECTION
When the virtual junction temperature Tvjreaches 150 °C,
pin 16 will be active LOW.
handbook, full pagewidth
current
in
output
stage
V
16
short-circuit over the load
V
P
Fig.3 Distortion detector waveform.
OPEN COLLECTOR OUTPUT
Pin 16 is an open collector output, which allows that more
devices can be connected together (pins 16).
MGL508
t
20 ms
50 µs
Fig.4 Short-circuit waveform.
2000 Mar 105
t
Page 6
Philips SemiconductorsPreliminary specification
4 × 13 W single-ended power amplifiersTDA8511J
LIMITING VALUES
In accordance with the absolute maximum system (IEC 134).
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
V
P
I
OSM
I
ORM
V
psc
V
pr
P
tot
T
stg
T
amb
T
vj
THERMAL CHARACTERISTICS
In accordance with IEC 747-1.
supply voltageoperating−18V
no signal−20V
non-repetitive peak output current−6A
repetitive peak output current−4A
AC and DC short-circuit safe voltage−18V
reverse polarity−6V
total power dissipation−60W
storage temperature−55+150°C
operating ambient temperature−40+85°C
virtual junction temperature−150°C
SYMBOLPARAMETERCONDITIONSVALUEUNIT
R
th(j-a)
R
th(j-c)
handbook, halfpage
3.0 K/W
thermal resistance from junction to ambient in free air40K/W
thermal resistance from junction to casesee Fig.51.3K/W
virtual junction
output 1output 2
3.0 K/W
0.7 K/W
0.2 K/W
output 3output 4
3.0 K/W
0.7 K/W
3.0 K/W
MEA860 - 2
case
Fig.5 Equivalent thermal resistance network.
2000 Mar 106
Page 7
Philips SemiconductorsPreliminary specification
4 × 13 W single-ended power amplifiersTDA8511J
DC CHARACTERISTICS
VP= 15 V; T
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
Supply
V
P
I
P
V
O
Mode select switch
V
on
MUTE CONDITION
V
mute
V
O
STANDBY CONDITION
V
stb
I
stb
I
sw(on)
Diagnostic output (pin 16)
V
DIAG
=25°C; measured in Fig.6; unless otherwise specified.
amb
supply voltagenote 161518V
quiescent current−80160mA
DC output voltage−6.9−V
switch-on voltage level8.5−−V
mute voltage3.3−6.4V
output voltage in mute positionV
diagnostic output voltageany short-circuit or clipping−−0.6V
= 1 V; f = 1 kHz−−2mV
Note
1. The circuit is DC adjusted at V
= 6 to 18 V and AC operating at VP= 8.5 to 18 V.
P
2000 Mar 107
Page 8
Philips SemiconductorsPreliminary specification
4 × 13 W single-ended power amplifiersTDA8511J
AC CHARACTERISTICS
VP= 15 V; RL=4Ω; f = 1 kHz; T
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
P
O
output powernote 1
THDtotal harmonic distortionP
P
O
f
l
f
h
G
v
output powerRL=2Ω; note 1
low frequency roll-offat −1 dB; note 2−25−Hz
high frequency roll-offat −1dB20−−kHz
closed loop voltage gain192021dB
SVRRsupply voltage ripple rejectionnote 3
Z
input impedance506075kΩ
i
V
n(o)
α
CS
∆G
channel unbalance−−1dB
v
noise output voltage
channel separationRs=10kΩ4060−dB
Dynamic distortion detector
THDtotal harmonic distortionV
=25°C; measured in Fig.6; unless otherwise specified.
amb
THD = 0.5%45.5−W
THD = 10%5.57−W
=1W−0.06−%
O
THD = 0.5%−10−W
THD = 10%−13−W
on48−−dB
mute46−−dB
standby80−−dB
on; R
=0Ω; note 4−50−µV
s
on; R
=10kΩ; note 4 −70100µV
s
mute; notes 4 and 5−50−µV
≤ 0.6 V;
16
no short-circuit
−10−%
Notes
1. Output power is measured directly at the output pins of the IC.
2. Frequency response externally fixed.
3. Ripple rejection measured at the output with a source-impedance of 0 Ω, maximum ripple amplitude of 2 V (p-p) and
at a frequency between 100 Hz and 10 kHz.
4. Noise measured in a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage independent of R
(Vi= 0 V).
s
2000 Mar 108
Page 9
Philips SemiconductorsPreliminary specification
4 × 13 W single-ended power amplifiersTDA8511J
TEST/APPLICATION INFORMATION
V
handbook, full pagewidth
mode
switch
diagnostic
10
kΩ
100
nF
P
2200
µF
220 nF
input 1
input 2
ground (signal)
supply
voltage
ripple
rejection
input 3
input 4
220 nF
220 nF
220 nF
100
µF
1
3
2
4
V /2
p
15
17
14
TDA8511J
60
kΩ
60
kΩ
60
kΩ
16513
reference
voltage
60
kΩ
711
6
8
9
10
12
MGL499
1000 µF
R
L
1000 µF
R
L
not connected
1000 µF
R
L
1000 µF
R
L
power ground (substrate)
Fig.6 Application diagram.
2000 Mar 109
Page 10
Philips SemiconductorsPreliminary specification
4 × 13 W single-ended power amplifiersTDA8511J
Mode select switch
Toavoidswitch-onplops,itisadvisedtokeeptheamplifier
in the mute mode during >100 ms (charging of the input
capacitors at pins 1, 3, 15 and 17.
The circuit in Fig.7 slowly ramps up the voltage at the
mode select switch pin when switching on and results in
fast muting when switching off.
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
SOT243-1
A2bpcD
17.0
4.6
4.4
0.75
0.60
15.5
0.48
0.38
IEC JEDEC EIAJ
1
e
(1)
deD
24.0
20.0
23.6
19.6
w M
b
p
(1)
E
h
12.2
102.54
11.8
REFERENCES
0510 mm
scale
1
1.27
2000 Mar 1011
e
5.08
c
2.4
4.3
1.6
EUROPEAN
PROJECTION
e
2
m
E
2
h
6
LL3m
3.4
12.4
3.1
11.0
2.1
1.8
v M
(1)
v
Qj
0.8
0.4w0.03
ISSUE DATE
97-12-16
99-12-17
Z
x
2.00
1.45
Page 12
Philips SemiconductorsPreliminary specification
4 × 13 W single-ended power amplifiersTDA8511J
SOLDERING
Introduction to soldering through-hole mount
packages
This text gives a brief insight to wave, dip and manual
soldering.Amorein-depthaccountofsolderingICscanbe
found in our
Packages”
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.
Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
DBS, DIP, HDIP, SDIP, SILsuitablesuitable
“Data Handbook IC26; Integrated Circuit
(document order number 9398 652 90011).
PACKAGE
Thetotalcontacttimeofsuccessivesolder waves must not
exceed 5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.
SOLDERING METHOD
DIPPINGWAVE
(1)
stg(max)
). If the
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
DEFINITIONS
Data sheet status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Mar 1012
Page 13
Philips SemiconductorsPreliminary specification
4 × 13 W single-ended power amplifiersTDA8511J
NOTES
2000 Mar 1013
Page 14
Philips SemiconductorsPreliminary specification
4 × 13 W single-ended power amplifiersTDA8511J
NOTES
2000 Mar 1014
Page 15
Philips SemiconductorsPreliminary specification
4 × 13 W single-ended power amplifiersTDA8511J
NOTES
2000 Mar 1015
Page 16
Philips Semiconductors – a w orldwide compan y
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable andmaybechanged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
2000
Internet: http://www.semiconductors.philips.com
69
Printed in The Netherlands753503/03/pp16 Date of release: 2000 Mar 10Document order number: 9397 750 06921
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