Datasheet TDA8510J Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TDA8510J

26 W BTL and 2 × 13 W SE power
amplifiers

Preliminary specification
Supersedes data of 1999 Jun 14
File under Integrated Circuits, IC01

1999 Dec 14

Philips Semiconductors Preliminary specification

26 W BTL and 2 × 13 W SE power

TDA8510J

amplifiers

FEATURES

• Requires very few external components

• High output power

• Low output offset voltage (BTL channel)

• Fixed gain

• Diagnostic facility (distortion, short-circuit and

temperature detection)

• Good ripple rejection

• Mode select switch (operating, mute and standby)

• AC and DC short-circuit safe to ground and to V

P

• Low power dissipation in any short-circuit condition

• Thermally protected

• Reverse polarity safe

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

• Electrostatic discharge protection

• No switch-on/switch-off plop

• Flexible leads

• Low thermal resistance

• Identical inputs (inverting and non-inverting).

GENERAL DESCRIPTION

The TDA8510Jis an integrated class-B output amplifier in
a 17-lead single-in-line (SIL) power package. It contains a
26 W Bridge-Tied Load (BTL) amplifier and 2 × 13 W
Single-Ended (SE) amplifiers.

The device is primarily developed for multi-media
applications and active speaker systems (stereo with
subwoofer).

General

V

P

I

ORM

I

q(tot)

I

stb

supply voltage 6 15 18 V
repetitive peak output current −−4A
total quiescent current − 80 − mA
standby current − 0.1 100 µA

BTL channel

P

o

output power RL=4Ω; THD = 10% − 26 − W
SVRR supply voltage ripple rejection 46 −−dB
V

n(o)

Z

 input impedance 25 −−kΩ

i

∆V

 DC output offset voltage −−150 mV

OO

noise output voltage Rs=0Ω−70 −µV

Single-ended channels

P

o

output power THD = 10%

R

=4Ω−7−W

L

R

=2Ω−13 − W

L

SVRR supply voltage ripple rejection 46 −−dB
V

n(o)

Z

 input impedance 50 −−kΩ

i

noise output voltage Rs=0Ω−50 −µV

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

TDA8510J DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1

1999 Dec 14 2

Philips Semiconductors Preliminary specification

26 W BTL and 2 × 13 W SE power
amplifiers

BLOCK DIAGRAM

non-inverting

input 1

non-inverting

input 2

supply voltage
ripple rejection

inverting

input 3

1

60

kΩ

2

kΩ

18 kΩ

3

60

kΩ

2

kΩ

18 kΩ

standby

switch

VA

15 kΩ

x1

4

60

15

kΩ

kΩ

15 kΩ

2

mute switch

VA

mute switch

VA

V

P

mute switch

VA

C

m

C

m

PROTECTIONS

thermal

short-circuit

mute
reference
voltage

C

m

power stage

power stage

standby
reference
voltage

mute
switch

V

V

P1

5

13

TDA8510J

TDA8510J

P2

6

output 1

8

output 2

mode

14

select

switch

16

diagnostic

output

10

output 3

18 kΩ

non-inverting

input 4

17

60

kΩ

2

kΩ

input
reference
voltage

2711

ground
(signal)

mute switch

VA

18 kΩ

9

not connected

Fig.1 Block diagram.

1999 Dec 14 3

C

m

GND1 GND2

power ground (substrate)

power stage

power stage

12

MGL428

output 4

Philips Semiconductors Preliminary specification

26 W BTL and 2 × 13 W SE power
amplifiers

PINNING

SYMBOL PIN DESCRIPTION

−INV1 1 non-inverting input 1
SGND 2 signal ground

−INV2 3 non-inverting input 2
RR 4 supply voltage ripple rejection
V

P1

OUT1 6 output 1
GND1 7 power ground 1
OUT2 8 output 2
n.c. 9 not connected
OUT3 10 output 3
GND2 11 power ground 2
OUT4 12 output 4
V

P2

MODE 14 mode select switch input
INV3 15 inverting input 3
V

DIAG

−INV4 17 non-inverting input 4

5 supply voltage 1

13 supply voltage 2

16 diagnostic output

−INV1

SGND

−INV2
RR

V
OUT1
GND1
OUT2

n.c.

OUT3

GND2
OUT4

V

MODE

INV3

V

DIAG

P1

P2

1
2
3
4
5
6
7
8

9
10
11
12

13
14
15
16

TDA8510J

TDA8510J

−INV4

17

MGL427

Fig.2 Pin configuration.

1999 Dec 14 4

Philips Semiconductors Preliminary specification

26 W BTL and 2 × 13 W SE power
amplifiers

FUNCTIONAL DESCRIPTION

The TDA8510J contains four identical amplifiers and can
be used for two Single-Ended (SE) channels (fixed gain
20 dB) and one Bridge-Tied Load (BTL) channel (fixed
gain 26 dB). Special features of the device are:

Mode select switch (pin 14)

• Low standby current (<100 µA)

• Low switching current (low cost supply switch)

• Mute facility.

Toavoidswitch-onplops,itisadvisedtokeeptheamplifier
in the mute mode during ≥100 ms (charging of the input
capacitors at pins 1, 3, 15 and 17). This can be achieved
by:

• Microcontroller control

• External timing circuit (see Fig.8).

Diagnostic output (pin 16)

TDA8510J

During this short-circuit condition, pin 16 is LOW for 20 ms
and HIGH for 50 µs (see Fig.5).

The power dissipation in any short-circuit condition is very
low.

handbook, halfpage

V

O

0

V

16

V

P

0

MGA705

t

DYNAMIC DISTORTION DETECTOR (DDD)
At the onset of clipping of one or more output stages, the

dynamic distortion detector becomes active and pin 16
goes LOW. This information can be used to drive a sound
processor or DC volume control to attenuate the input
signal and thus limit the distortion. The output level of
pin 16 is independent of the number of channels that are
clipping (see Figs 3 and 4).

SHORT-CIRCUIT PROTECTION
When a short-circuit occurs at one or more outputs to

ground or to the supply voltage, the output stages are
switched off until the short-circuit is removed and the
device is switched on again, with a delay of approximately
20 ms, after removal of the short-circuit. During this
short-circuit condition, pin 16 is continuously LOW.

When a short-circuit across the load of one or more
channels occurs the output stages are switched off for
approximately 20 ms. After that time it is checked during
approximately 50 µs to see whether the short-circuit is still
present. Due to this duty cycle of 50 µs/20 ms the average
current consumption during this short-circuit condition is
very low (approximately 40 mA).

Fig.3 Distortion detector waveform; BTL channel.

handbook, halfpage

V

O

0

V

16

V

P

0

MGA706

t

Fig.4 Distortion detector waveform; SE channels.

1999 Dec 14 5

Philips Semiconductors Preliminary specification

26 W BTL and 2 × 13 W SE power
amplifiers

handbook, full pagewidth

current

in

output

stage

V

16

short-circuit over the load

V

P

Fig.5 Short-circuit waveform.

TDA8510J

MGL214

t

20 ms

t

50 µs

TEMPERATURE DETECTION
When the virtual junction temperature Tvjreaches 150 °C, pin 16 will be active LOW.

OPEN-COLLECTOR OUTPUT
Pin 16 is an open-collector output, which allows pin 16 of more devices being tied together.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

P

supply voltage operating − 18 V

no signal − 20 V

I

OSM

I

ORM

V

sc

V

rp

P

tot

T

stg

T

amb

T

vj

non-repetitive peak output current − 6A
repetitive peak output current − 4A
AC and DC short-circuit safe voltage − 18 V
reverse polarity voltage − 6V
total power dissipation − 60 W
storage temperature −55 +150 °C
operating ambient temperature −40 +85 °C
virtual junction temperature − 150 °C

THERMAL CHARACTERISTICS

In accordance with IEC 747-1.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th(j-a)
th(j-c)

thermal resistance from junction to ambient in free air 40 K/W
thermal resistance from junction to case (see Fig.6) 1.3 K/W

1999 Dec 14 6

Philips Semiconductors Preliminary specification

26 W BTL and 2 × 13 W SE power
amplifiers

handbook, halfpage

output 1 output 2

3.0 K/W

0.7 K/W

virtual junction

3.0 K/W

0.2 K/W

3.0 K/W

case

output 3 output 4

3.0 K/W

0.7 K/W

MEA860 - 2

TDA8510J

Fig.6 Equivalent thermal resistance network.

1999 Dec 14 7

Philips Semiconductors Preliminary specification

26 W BTL and 2 × 13 W SE power

TDA8510J

amplifiers

DC CHARACTERISTICS

VP=15V; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

V

P

I

q(tot)

V

O

∆V

 DC output offset voltage note 2 −−150 mV

OO

Mode select switch

V

SW(on)

MUTE CONDITION
V

mute

V

O

 DC output offset voltage note 2 −−150 mV

∆V

OO

STANDBY CONDITION
V

stb

I

stb

I

sw(on)

Diagnostic output (pin 16)

V

DIAG

=25°C; measured in Fig.7; unless otherwise specified.

amb

supply voltage note 1 6 15 18 V
total quiescent current − 80 160 mA
DC output voltage − 6.9 − V

switch-on voltage level 8.5 −−V

mute voltage 3.3 − 6.4 V
output voltage in mute position V

=1V; f=1kHz −−2mV

I(max)

standby voltage 0 − 2V
standby current −−100 µA
switch-on current − 12 40 µA

diagnostic output voltage any short-circuit or clipping −−0.6 V

Notes

1. The circuit is DC adjusted at V

2. Only for BTL channel (V

12-10

).

= 6 to 18 V and AC operating at VP= 8.5 to 18 V.

P

1999 Dec 14 8

Philips Semiconductors Preliminary specification

26 W BTL and 2 × 13 W SE power

TDA8510J

amplifiers

AC CHARACTERISTICS

VP= 15 V; f = 1 kHz; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

BTL channel

P

o

output power note 1

THD total harmonic distortion P
B power bandwidth THD = 0.5%; − 20 to − Hz

f

ro(l)

f

ro(h)

G

v

low frequency roll-off at −1 dB; note 2 − 25 − Hz
high frequency roll-off at −1dB 20 −−kHz
closed loop voltage gain 25 26 27 dB

SVRR supply voltage ripple rejection note 3

Z

 input impedance 25 30 38 kΩ

i

V

n(o)

α

cs

noise output voltage on; Rs=0Ω; note 4 − 70 −µV

channel separation Rs=10kΩ 40 60 − dB
DYNAMIC DISTORTION DETECTOR
THD total harmonic distortion V16≤ 0.6 V; no short-circuit − 10 − %

=25°C; measure in Fig.7; unless otherwise specified.

amb

THD = 0.5% 16 20 − W
THD = 10% 22 26 − W

=1W − 0.06 − %

o

P

= −1 dB; with respect to 16 W 15000

o

on 48 −−dB
mute 46 −−dB
standby 80 −−dB

on; R

=10kΩ; note 4 − 100 200 µV

s

mute; notes 4 and 5 − 60 −µV

1999 Dec 14 9

Philips Semiconductors Preliminary specification

26 W BTL and 2 × 13 W SE power

TDA8510J

amplifiers

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Single-ended channels

P

o

THD total harmonic distortion P
f

ro(l)

f

ro(h)

G

v

SVRR supply voltage ripple rejection note 3

Z

 input impedance 50 60 75 kΩ

i

V

n(o)

α

cs

∆G

 channel unbalance −−1dB

v

DYNAMIC DISTORTION DETECTOR
THD total harmonic distortion V16≤ 0.6 V; no short-circuit − 10 − %

output power note 1

THD = 0.5% 8 10 − W
THD = 10% 11 13 − W

R

=4Ω; note 1

L1

THD = 0.5% − 5.5 − W
THD = 10% − 7 − W

=1W − 0.06 − %

o

low frequency roll-off at −1 dB; note 2 − 25 − Hz

high frequency roll-off at −1dB 20 −−kHz

closed loop voltage gain 19 20 21 dB

on 48 −−dB
mute 46 −−dB
standby 80 −−dB

noise output voltage on; Rs=0Ω; note 4 − 50 −µV

on; R

=10kΩ; note 4 − 70 100 µV

s

mute; notes 4 and 5 − 50 −µV

channel separation Rs=10kΩ 40 60 − dB

Notes

1. Output power is measured directly at the output pins of the IC.

2. Frequency response externally fixed.

3. Ripplerejection measured at the output with a source impedance of 0 Ω, maximum ripple amplitude of 2 V (p-p) and
at a frequency of between 100 Hz and 10 kHz.

4. Noise measured in a bandwidth of 20 Hz to 20 kHz.

5. Noise output voltage independent of Rs (Vi= 0 V).

1999 Dec 14 10

Philips Semiconductors Preliminary specification

26 W BTL and 2 × 13 W SE power
amplifiers

TEST AND APPLICATION INFORMATION

100

µF

1

3
2

4

1/2V

15

17

mode

switch

P

handbook, full pagewidth

input 1

input 2

ground (signal)

supply voltage
ripple rejection

inputs

3 and 4

220 nF

220 nF

470 nF

14

TDA8510J

60
kΩ

60
kΩ

60
kΩ

10
kΩ

16 5 13

+

−

−
+

reference

voltage

60
kΩ

−
+

−
+

6

8

10

12

9

100

nF

not connected

2200
µF

1000 µF

R

L1

2 Ω

1000 µF

R

L1

2 Ω

R

L2

4 Ω

V

P

TDA8510J

711

power ground (substrate)

Fig.7 Application diagram.

1999 Dec 14 11

MGL429

Philips Semiconductors Preliminary specification

26 W BTL and 2 × 13 W SE power
amplifiers

Mode select switch

Toavoidswitch-onplops,itisadvisedtokeeptheamplifier
in the mute mode during >100 ms (charging of the input
capacitors at pins 1, 3, 15 and 17.

The circuit in Fig.8 slowly ramps up the voltage at the
mode select switch pin when switching on and results in
fast muting when switching off.

handbook, halfpage

V

P

10 kΩ 100 Ω

47 µF

TDA8510J

mode
select

switch

100 kΩ

MGA708

Fig.8 Mode select switch circuitry.

1999 Dec 14 12

Philips Semiconductors Preliminary specification

26 W BTL and 2 × 13 W SE power
amplifiers

PACKAGE OUTLINE

DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)

non-concave

D

d

x

E

h

D

h

view B: mounting base side

A

2

TDA8510J

SOT243-1

117

e

Z

DIMENSIONS (mm are the original dimensions)

UNIT A e

mm

A2bpcD

17.0

4.6

4.2

0.75

0.60

15.5

0.48

0.38

1

e

(1)

deD

24.0

20.0

23.6

19.6

w M

b

p

(1)

E

h

12.2

10 2.54

11.8

0 5 10 mm

B

j

L

3

1.27

scale

1

e

5.08

L

E

2

h

6

Q

LL3m

3.4

12.4

3.1

11.0

2.4

1.6

e

4.3

m

E

A

c

2

2.1

1.8

v M

(1)

v

Qj

0.8

0.4w0.03

Z

x

2.00

1.45

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE
VERSION

SOT243-1

IEC JEDEC EIAJ

REFERENCES

1999 Dec 14 13

EUROPEAN

PROJECTION

ISSUE DATE

95-03-11
97-12-16

Philips Semiconductors Preliminary specification

26 W BTL and 2 × 13 W SE power
amplifiers

SOLDERING
Introduction to soldering through-hole mount

packages

This text gives a brief insight to wave, dip and manual
soldering.Amorein-depthaccountofsolderingICscanbe
found in our

Packages”

Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.

Soldering by dipping or by solder wave

The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.

Suitability of through-hole mount IC packages for dipping and wave soldering methods

DBS, DIP, HDIP, SDIP, SIL suitable suitable

“Data Handbook IC26; Integrated Circuit

(document order number 9398 652 90011).

PACKAGE

Thetotalcontacttimeofsuccessivesolder waves must not
exceed 5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

Manual soldering

Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.

SOLDERING METHOD

DIPPING WAVE

(1)

TDA8510J

). If the

stg(max)

Note

1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Dec 14 14

Philips Semiconductors Preliminary specification

26 W BTL and 2 × 13 W SE power
amplifiers

TDA8510J

NOTES

1999 Dec 14 15

Philips Semiconductors – a w orldwide compan y

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© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable andmaybe changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

1999

Internet: http://www.semiconductors.philips.com

68

Printed in The Netherlands 545002/03/pp16 Date of release: 1999 Dec 14 Document order number: 9397750 06653