Product specification
Supersedes data of 1999 Jun 21
File under Integrated Circuits, IC02
1999 Dec 14
Page 2
Philips SemiconductorsProduct specification
QPSK transmitterTDA8050
FEATURES
• Programmable gain
• PLL controlled carrier frequency
• 3-wire transmission bus
• 5 V supply voltage.
APPLICATIONS
• QPSK modulation.
GENERAL DESCRIPTION
The QuadraturePhaseShift Keying(QPSK) transmitter is
a monolithic bipolar IC dedicated for quadrature
modulation of the I and Q signals. It includes:
• Two double-balanced mixers
• Symmetrical Voltage Controlled Oscillator (VCO) with
0 to 90 degree signal generation for modulation
• Phase-Locked Loop (PLL) for IF frequency control
• Conversion mixer
QUICK REFERENCE DATA
• PLL for RF frequency control
• Gain controlled output amplifier
• 3-wire bus and an output buffer.
Two PLLs are incorporated, the first PLL includes:
• Fixed main divider
• Crystal oscillator and its programmable reference
divider
• Phase/frequency detector combined with afixed charge
pump.
The second PLL includes:
• Divide-by-four preamplifier
• 12-bit programmable divider
• Crystal oscillator and its programmable reference
divider
• Phase/frequency detector combined with a ‘clever’
chargepump which drivesthe tuning amplifier,including
9 V output.
SYMBOLPARAMETERMIN.TYP.MAX.UNIT
V
CC
f
c
V
o(max)
f
xtal
f
ref(MOD)
f
step
T
amb
supply voltage4.755.005.25V
output centre frequency5−40MHz
maximum output level−55−dBmV
crystal frequency1−4MHz
reference frequency for modulator synthesizer−250−kHz
frequency step size for convertor synthesizer50−500kHz
operating ambient temperature0−70°C
ORDERING INFORMATION
TYPE
NUMBER
NAMEDESCRIPTIONVERSION
PACKAGE
TDA8050TSO32plastic small outline package; 32 leads; body width 7.5 mmSOT287-1
1999 Dec 142
Page 3
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1999 Dec 143
BLOCK DIAGRAM
Philips SemiconductorsProduct specification
QPSK transmitterTDA8050
I_IN
I_INC
Q_IN
Q_INC
CLK
DATA
EN
LOCK
5
6
7
8
14
15
16
23
CHARGE
CP_MOD
DVCC13DGND
PUMP
RF_OUTC
AVCC1
18
AGND1
26
9
RF_OUT
252428
RF_INCIF_FILTC
RF_INIF_FILT
27
30 31
SW_CAP
MODULATORCONVERTER
×
Σ
×
×
3-WIRE BUS TRANCEIVER
DIGITAL
PHASE
COMPARATOR
PROGRAMMABLE
FIXED
MAIN DIVIDER
REF DIVIDER
90°0°
1/2
TDA8050
1012111722 21
TKAMOD
TKBMODTKACONV
OSC_INTKBCONV
DAC
PROGRAMMABLE
MAIN DIVIDER
PROGRAMMABLE
REF DIVIDER
AVCC2
32
DIGITAL
PHASE
COMPARATOR
2019
TUNECONVCP_CONV
AGND2
29
PROGRAM-
MABLE
CHARGE
PUMP
4
1
OUTEN
3
BUF_OUTC
2
BUF_OUT
FCE181
handbook, full pagewidth
Fig.1 Block diagram.
Page 4
Philips SemiconductorsProduct specification
QPSK transmitterTDA8050
PINNING
SYMBOLPINDESCRIPTION
OUTEN1output enable
BUF_OUT2output amplifier balanced output
BUF_OUTC3output amplifier balanced output
AGND24converter analog ground 2
I_IN5I balanced input
I_INC6I balanced input
Q_IN7Q balanced input
Q_INC8Q balanced input
AGND19modulator analog ground 1
TKAMOD10 modulator VCO tank circuit input 2
TKBMOD11 modulator VCO tank circuit input 1
CP_MOD12 modulator charge pump output for
PLL loop filter
DVCC13digital supply voltage
CLK14 3-wire bus serial control clock
DATA15 3-wire bus serial control data input
EN16 3-wire bus serial control enable
OSC_IN17 crystal oscillator input
DGND18 digital ground
CP_CONV19converter charge pump output for
PLL loop filter
TUNECONV 20 tuning voltage output for converter
VCO
TKBCONV21converter VCO tank circuit input 1
TKACONV22converter VCO tank circuit input 2
LOCK23 lock detect signal
IF_FILT24IF balanced output to filter
IF_FILTC25 IF balanced output to filter
AVCC126 modulator analog supply voltage
RF_OUTC27 RF balanced output to filter
RF_OUT28 RF balanced output to filter
AVCC229 converter analog supply voltage
RF_IN30RF balancedinput to programmable
The I and Q are balanced analog signals at a level of
400 mV (p-p). These are mixed by two double balanced
mixers with the output signal generated by a first local
oscillator providing the modulated signal.
The modulated signal is then filtered by an IF filter. This
filteredsignal together with asignalgenerated by asecond
local oscillator is converted by a balanced mixer to
produce the QPSK signal.
TheQPSK signal isamplified by again controlled amplifier
to a level suitable for transmission. The gain of the
controlled amplifier is buscontrolled and this amplifier can
be disabled when not transmitting to provide signal
attenuation.
The amplified signal is applied to an on-chip amplifier
having two balanced outputs (open collector) linked totwo
chip resistors (values 150 Ω), and 9 V. The balanced
outputs are designed to drive a 2 : 1 transformer
(Siemens V944) with a 75 Ω load giving an output level
of 55 dBmV.The output frequencyrange of the transmitter
is 5 to 40 MHz.
The frequency of the first local oscillator operates at twice
the frequency (i.e. 280 MHz) fixed by a Phase-Locked
Loop (PLL) implemented in the circuit.
Thefrequencyof the second localoscillatoroperatesin the
bandwidth 145 to 180 MHz and programmable due to a
PLL implemented in the circuit.
The VCO of both first and secondlocal oscillatorsrequires
an external LC tank circuit with two varicap diodes.
The data to the PLL is loaded in bursts framed by the
signal EN. Programming rising clock edges and their
appropriate data bits are ignored until EN goes active
(LOW). The internal latches are updated with the latest
programming data when EN returns inactive (HIGH).
The last 14 bits are stored in the programming register.
No check is made on the number of clock pulses received
during the time programming is enabled. A wrong active
clock edge will be generated causing a shift of data
bits, if EN goes HIGH while CLK is still LOW. At power
up, EN should beHIGH. The lock detector output LOCK is
HIGH when both PLLs are in lock.
The main divider ratio and the reference divider ratios are
provided via the serial bus. A control register controls the
Digital-to-Analog Converter (DAC), the output amplifier
and the charge pump currents (Tables 1, 2 and 3).
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOLPARAMETERMIN.MAX.UNIT
V
CC
t
sc
V
max
V
o(tune)
V
o(buf)
P
tot
T
amb
T
stg
T
j(max)
supply voltage−0.3+6.0V
short-circuit time (every pin to VCCor GND)−10s
voltage on all pins except BUF_OUT, BUF_OUTC and TUNECONV−0.3V
CC
V
output tuning voltage−0.3+30V
output buffer voltage on pins BUF_OUTand BUF_OUTC−10V
maximum power dissipation−800mW
operating ambient temperature070°C
storage temperature−40+150°C
junction temperature−150°C
1999 Dec 145
Page 6
Philips SemiconductorsProduct specification
QPSK transmitterTDA8050
THERMAL CHARACTERISTICS
SYMBOLPARAMETERCONDITIONSVALUEUNIT
R
th(j-a)
HANDLING
Human Body Model (HBM): The IC pins withstand 2 kV except pins 27 and 28 (1750 V).
Machine Model (MM): The IC pins withstand 100 V.
CHARACTERISTICS
Measured in application circuit (see Fig.9) with the following conditions: V
values; unless otherwise specified.
thermal resistance from junction to ambientin free air63K/W
=5V; T
CC
=25°C; all AC units are RMS
amb
modulator analog supply voltage4.7555.25V
modulator analog supply current−41−mA
converter analog supply voltage4.7555.25V
converter analog supply current−48−mA
buffer output supply current−44−mA
digital supply voltage4.7555.25V
digital supply current−22−mA
tuning supply voltage−−9V
input DC levelover the complete range of
−0.5VCC−V
temperature
signal input level (balanced)
indicative−400500mV
(peak-to-peak value)
I and Q maximum input frequencyindicative−10−MHz
differential input impedance−4.4−kΩ
1 dB amplifier bandwidthindicative−10−MHz
output centre frequency−−140MHz
LO suppressionsee Fig.3−−28−dBc
differential output impedance−1.8−kΩ
oscillation frequency VCO−−280MHz
1999 Dec 146
Page 7
Philips SemiconductorsProduct specification
QPSK transmitterTDA8050
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
Converter output
V
o
output levelfi= 30 MHz; V
at I and Q inputs
∆V
o
output flatnessfi= 5 to 40 MHz;
V
= 100 mV at I and Q
i(dif)
inputs
f
c
Z
o(dif)
output centre frequency5−40MHz
differential output impedance−150−Ω
IM33rd-order intermodulation distortion see Fig.4−−−35dBc
H
2
2nd-order harmonic of 5 to 40 MHz
signal
fi= 10 to 80 MHz;
V
= 100 mV at I and Q
i(dif)
inputs
H
3
3rd-order harmonic of 5 to 40 MHz
signal
fi= 15 to 120 MHz;
V
= 100 mV at I and Q
i(dif)
inputs
S
o
mixer spurious outputs of
5 to 40 MHz signal
fi= 5 to 40 MHz;
V
= 100 mV at I and Q
i(dif)
inputs
Converter voltage controlled oscillator
f
osc(min)
f
osc(max)
minimum oscillation frequency−−145MHz
maximum oscillation frequency180−−MHz
Programmable gain and output buffer; note 1
Z
i(dif)
differential input impedance−5.6−kΩ
∆Goutput level step size−−2dB
∆Buf
o
output level adjust rangeVi= 30 dBmV sine wave;
40 MHz at pin
RF_IN and RF_INC;
DAC = 0 to 31
V
∆V
o
o
output level−55−dBmV
output flatnessfi= 5 to 40 MHz;
output voltage (lock)−5−V
output voltage (unlock)−0.02−V
1999 Dec 148
Page 9
Philips SemiconductorsProduct specification
QPSK transmitterTDA8050
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
Serial control clock
f
clk
t
su
t
h(CLK)
t
d(strt)
t
d(stp)
Notes
1. All specification points of the output section and the overall circuit are measured after the 2 : 1 transformer
(siemens V944) connected with a load of 75 Ω.
3. Crystal oscillator; the crystal oscillator uses a 4, 2 or 1 MHz crystal in series with a capacitor. The crystal is serial
resonant with load a capacitance of 18 to 20 pF. The connection to VCCis preferred but can also be to GND.
clock frequency−330−kHz
input data to CLK set-up timesee Fig.3−2−µs
input data to CLK hold timesee Fig.3−1−µs
delay to rising clock edgesee Fig.3−3−µs
delay from last clock edgesee Fig.3−3−µs
= 12.5 kHz; V
ref
= 100 mV; V
I(diff)
= 100 mV; VO= 55 dBmV;
O(diff)
Notes to the characteristics
handbook, full pagewidth
The amplitude imbalance and the LO suppression are measured in the spectrum of the signal measured at the output IF_FILT and are defined in the
following conditions:
Measure 1: I input frequency = 500 kHz. I input level = 400 mV (p-p) sine wave. Unused input as 0 V differential.
Measure 2: Q input frequency = 500 kHz. Q input level = 400 mV (p-p) sine wave. Unused input as 0 V differential.
IF_FILT
measure 2 f
i(Q)
imbalance
LO
(sup)
measure 1 f
i(I)
FCE183
frequency
Fig.3 Imbalance and LO suppression.
1999 Dec 149
Page 10
Philips SemiconductorsProduct specification
QPSK transmitterTDA8050
handbook, full pagewidth
50 Ω
50 Ω
500 kHz300 kHz
I_IN
I_INC
Q_IN
Q_INC
RF_OUT
RF_OUTC
39.139.539.739.94040.140.340.540.7
3rd-order intermodulation distortion;
Two tones of 260 mV (p-p) at each I and Q input:
400
V
--------- -
av()
2 sine waves with a total RMS values of 128 mV give:
2
2x
×128=
128
x
==
--------- 2
f
= 500 kHz and fRF= 40 MHz.
2
4–
-----20
10
×128 mV RMS()==
2
90 mV (RMS) = 260 mV (p-p) and f1= 300 kHz,
Fig.4 3rd-order intermodulation distortion in I and Q channels (IM3).
f (MHz)
FCE184
1999 Dec 1410
Page 11
Philips SemiconductorsProduct specification
QPSK transmitterTDA8050
handbook, full pagewidth
50 Ω
DAC = 31.
f = 26.5 MHz.
Vi is variable to have a variable output voltage.
o(−1 dB)
150 Ω
150 Ω
V
G
G
max − 1
gain
(dB)
max
RF_IN
RF_INC
BUF_OUT
BUF_OUTC
V
Fig.5 Maximum gain and compression point.
Siemens V944
9 V
o
FCE185
75 Ω
V
o2
handbook, full pagewidth
BUF_OUT
BUF_OUTC
DAC = 28.
= 5 to 40 MHz.
f
i
= 200 mV sine wave.
V
i
= 55 dBmV (RMS value).
V
o
RF_IN
RF_INC
Fig.6 Harmonics of output section H2 and H3.
1999 Dec 1411
150 Ω
150 Ω
Siemens V944
9 V
75 Ω
FCE186
Page 12
Philips SemiconductorsProduct specification
QPSK transmitterTDA8050
handbook, full pagewidth
ISO
tot=Vo1
(dB) − Vo2(dB).
OUTEN = 0 V
V
= 100 mV
i(dif)
V
= 100 mV
i(dif)
OUTEN = 5 V
0 V
0 V
I_IN
I_INC
Q_IN
Q_INC
I_IN
I_INC
Q_IN
Q_INC
BUF_OUT
BUF_OUTC
DAC = 28
BUF_OUT
BUF_OUTC
DAC = 28
Fig.7 Isolation total.
150 Ω
150 Ω
150 Ω
150 Ω
Siemens V944
9 V
Siemens V944
9 V
75 Ω
75 Ω
V
o1
V
o2
FCE187
1999 Dec 1412
Page 13
Philips SemiconductorsProduct specification
QPSK transmitterTDA8050
APPLICATION INFORMATION
handbook, full pagewidth
CLK
DATA
EN
t
d(strt)
t
su
t
h(CLK)
T
cy
t
d(stp)
MBL113
Fig.8 3-wire bus timing.
Table 1 Data format; note 1
DATAADDRESS
D11
D10D9D8D7D6D5D4D3D2D1D0AD1AD0
first in
Modulator reference divider
Converter reference divider ratio
ratio
XXMP1
(2)
MP0
(2)
R7R6R5R4R3R2R1R001
Control register
XXXOEN
(3)
CR2
(4)
CR1CR0
(4)
DAC4
(5)
DAC3 DAC2 DAC1 DAC010
Main divider ratio
P11P10P9P8P7P6P5P4P3P2P1P011
last in
Notes
1. X = don’t care.
2. MP1 and MP0: modulator reference divider ratio (see Table 2).
3. When OEN (output enable) is at logic 0, output is disabled, at logic 1 output is enabled.
4. CR2 to CR0: converter synthesizer charge pump current (see Table 3).
5. When DAC4 to DAC0 is at logic 0 minimum gain is programmed, at logic 1 maximum gain is programmed.
1999 Dec 1413
Page 14
Philips SemiconductorsProduct specification
QPSK transmitterTDA8050
Table 2 Modulator reference divider ratio
MP1MP0PROGRAMMED RATIO
114
108
0116
Table 3 Converter synthesizer charge pump current
CR2CR1CR0LOCK_CONV
00001.2
00010.36
00100.36
00110.1
010−0.1
011−0.36
100−1.2
(1)
Icp (mA)
Note
1. LOCK_CONV is an internal signal.
When at logic 0 converter PLL is out-of-lock. When at logic 1 converter PLL is in-lock.
Table 4 Converter synthesizer: f
f
osc\fcomp
12.5 kHz25 kHz50 kHz125 kHz
comp=fosc
/RD
1 MHz8040208
4 MHz3201608032
Table 5 Converter synthesizer; ND = 4; f
\step50 kHz100 kHz200 kHz500 kHz
f
lo
=ND×NDR × f
lo
= NDR × step
comp
145 MHz29001450725290
180 MHz36001800900360
1999 Dec 1414
Page 15
Philips SemiconductorsProduct specification
QPSK transmitterTDA8050
handbook, full pagewidth
22 kΩ
22 kΩ
330pF370
10 kΩ
10 kΩ
pF
+5 V
Siemens
V944
100 Ω
100 Ω
BB133
(2×)
100 nF
100 nF
100 nF
100 nF
15 pF
10
pF
15 pF
18 kΩ
8.2 nF
150 Ω
+9 V
150 Ω
OUTEN
BUF_OUT
BUF_OUTC
AGND2
I_INC
Q_IN
Q_INC
AGND1
TKAMOD
22 nH
TKBMOD
CP_MOD
DVCC
I_IN
CLK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
TDA8050
SW_CAP
32
RF_INC
31
RF_IN
30
AVCC2
29
RF_OUT
28
RF_OUTC
27
AVCC1
26
IF_FILTC
25
IF_FILT
24
LOCK
23
TKACONV
22
TKBCONV
21
TUNECONV
20
CP_CONV
19
68 nH
56 nH
100 pF
100 nF
100 nF
+5 V
100 nF
100 nF
+5 V
140 MHz
330 pF
680 Ω
47 pF
390 nH390 nH
27 pF
18 pF
BB132
(2×)
39 pF
8.2
pF
39 pF
10 kΩ
+9 V
100
nF
10 kΩ
22 kΩ
10 kΩ
820 pF
22 kΩ
27 kΩ
10 nF
DATADGND
15
EN
16
Fig.9 Application diagram.
1999 Dec 1415
18
17
OSC_IN
4 MHz
18 pF
MBK982
Page 16
Philips SemiconductorsProduct specification
QPSK transmitterTDA8050
INTERNAL PIN CONFIGURATION
SYMBOLPINDESCRIPTIONDC VOLTAGE
OUTEN1−
SW_CAP321.7 V
1
FCE004
32
BUF_OUT25.8 V
BUF_OUTC35.8 V
23
FCE005
AGND240
4
FCE023
I_IN52.5 V
I_INC62.5 V
5
FCE006
6
1999 Dec 1416
Page 17
Philips SemiconductorsProduct specification
QPSK transmitterTDA8050
SYMBOLPINDESCRIPTIONDC VOLTAGE
Q_IN72.5 V
Q_INC82.5 V
7
FCE007
8
AGND190 V
9
FCE008
TKAMOD103.1 V
TKBMOD113.1 V
1011
FCE009
CP_MOD122.1 V
12
FCE010
DVCC13supply voltage5 V
1999 Dec 1417
Page 18
Philips SemiconductorsProduct specification
QPSK transmitterTDA8050
SYMBOLPINDESCRIPTIONDC VOLTAGE
CLK14−
14
FCE011
DATA15−
15
FCE012
EN16−
16
FCE013
OSC_IN172.9 V
V
CC
17
FCE014
DGND180
18
1999 Dec 1418
FCE015
Page 19
Philips SemiconductorsProduct specification
QPSK transmitterTDA8050
SYMBOLPINDESCRIPTIONDC VOLTAGE
CP_CONV192.1V
V
down
up
CC
19
FCE016
TUNECONV20V
20
FCE017
VT
TKBCONV213.1V
TKACONV223.1V
21
FCE018
22
LOCK230 V
23
FCE019
1999 Dec 1419
5V
Page 20
Philips SemiconductorsProduct specification
QPSK transmitterTDA8050
SYMBOLPINDESCRIPTIONDC VOLTAGE
IF_FILT242.1 V
IF_FILTC252.1 V
24
FCE020
25
AVCC126supply voltage5 V
RF_OUTC273.7V
RF_OUT283.7V
27
28
FCE021
AVCC229supply voltage5 V
RF_IN302.1 V
RF_INC312.1V
30
1999 Dec 1420
31
FCE022
Page 21
Philips SemiconductorsProduct specification
QPSK transmitterTDA8050
PACKAGE OUTLINE
SO32: plastic small outline package; 32 leads; body width 7.5 mm
SOT287-1
D
c
y
Z
32
pin 1 index
1
e
17
A
2
A
16
w M
b
p
E
H
E
1
L
detail X
A
X
v M
A
Q
(A )
L
p
A
3
θ
0510 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
mm
inches
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
A
max.
2.65
0.10
OUTLINE
VERSION
SOT287-1
A1A2A3b
0.3
2.45
0.1
0.012
0.004
0.25
2.25
0.096
0.01
0.086
IEC JEDEC EIAJ
0.49
0.36
0.02
0.01
p
0.27
0.18
0.011
0.007
(1)E(1)
cD
20.7
20.3
0.81
0.80
REFERENCES
7.6
7.4
0.30
0.29
1.27
0.050
1999 Dec 1421
eHELLpQZywv θ
10.65
10.00
0.419
0.394
1.4
0.055
1.1
0.4
0.043
0.016
1.2
1.0
0.047
0.039
0.250.1
0.25
0.010.01
EUROPEAN
PROJECTION
0.004
(1)
0.95
0.55
0.037
0.022
ISSUE DATE
95-01-25
97-05-22
o
8
o
0
Page 22
Philips SemiconductorsProduct specification
QPSK transmitterTDA8050
SOLDERING
Introduction to soldering surface mount packages
Thistext gives averybrief insight to acomplextechnology.
A more in-depth account of soldering ICs can be found in
our
“Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface
mount IC packages.Wave soldering is not alwayssuitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
tothe printed-circuit boardby screen printing,stencilling or
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering andcooling) vary
between 100 and 200 seconds depending on heating
method.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
• Forpackages with leads onfoursides, the footprintmust
be placedat a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering,the packagemust
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Wave soldering
Conventional single wave soldering is not recommended
forsurface mount devices (SMDs)orprinted-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
1999 Dec 1422
Page 23
Philips SemiconductorsProduct specification
QPSK transmitterTDA8050
Suitability of surface mount IC packages for wave and reflow soldering methods
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitablefor SSOP and TSSOP packages with apitch (e) equal to or larger than0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
Data sheet status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Dec 1423
Page 24
Philips Semiconductors – a w orldwide compan y
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
1999
Internet: http://www.semiconductors.philips.com
68
Printed in The Netherlands545004/25/04/pp24 Date of release: 1999 Dec 14Document order number: 9397 750 06555
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