Datasheet TDA8042M Datasheet (Philips)

Page 1
INTEGRATED CIRCUITS
DATA SH EET
TDA8042M
Quadrature demodulator
Product specification File under Integrated Circuits, IC02
1997 Apr 11
Page 2
Quadrature demodulator TDA8042M

FEATURES

5 V supply voltage
Internal voltage reference
350 to 650 MHz input frequency range
On-chip 0° and 90° phase shifter
Symbol rate up to 45 Msymbols/s
High input sensitivity
Built-in voltage stabilizer
AGC amplifier with 21 dB control range
AGC detector.

APPLICATION

Binary Phase-Shift Keying (BPSK) and Quadrature Phase-Shift Keying (QPSK) demodulation.

GENERAL DESCRIPTION

The TDA8042M is a monolitic bipolar IC dedicated for BPSK and QPSK demodulation. It is designed to be used together with the TDA8043 as part of a complete BPSK/QPSK satellite demodulator and decoder. The bandwidth of the TDA8042M allows symbol rates up to 45 Msymbols/s. It includes two matched mixers, an IF gain controlled amplifier, a symmetrical oscillator, a 0°/90° phase shifter, two low-pass filters and two matched baseband amplifiers.
The high input sensitivity makes interfacing with various sources easy. The input sensitivity can be adjusted by means of an internal AGC amplifier.
The oscillator operates at half the IF frequency. The local oscillator signal driving the mixers is made by doubling the oscillator frequency by an internal frequency multiplier. The oscillator frequency can be set by the appropriate external LC tank circuit. The internal wideband phase shifter provides two oscillator signals which are 90 degrees out of phase to drive the mixers.
An AGC detector at the I and Q outputs makes it possible to keep the I and Q signals at a constant level to drive the analog-to-digital converters of the TDA8043.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CC
I
CC
V
i(RF)
f
i(RF)
V
olQ(p-p)
EEG
Φ(I-Q)
G(I-Q)
tilt
supply voltage 4.75 5.0 5.25 V supply current VCC= 5.0 V 54 67.5 81 mA operating input level 57 dBµV RF input signal frequency 350 650 MHz I and Q output voltage (peak-to-peak value) 0.8 V phase matching error between I and Q channels 0.7 2 deg gain matching error between I and Q channels 0.15 0.8 dB gain tilt error between I and Q channels 0.3 0.5 dB

ORDERING INFORMATION

TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
TDA8042M SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1
1997 Apr 11 2
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Philips Semiconductors Product specification
Quadrature demodulator TDA8042M

BLOCK DIAGRAM

handbook, full pagewidth
IDET
1
DET
20
VTH
IFA
IFB
2
3
4
5
6
7
8
×
0°
90°
×
9
10
I
× 2
Q
VOLTAGE
REFERENCE
VCO
32
GND1
VAGC
IOUT
GND2
V
CC2
QOUT FDIV(B)
GND1
19
GND1
18
V
CC1
17
OSCDIS
16
OSCA
15
OSCB
14
GND1
13
FDIV(A)
12
11
V
CC1
TDA8042M
MBH968
Fig.1 Block diagram.
1997 Apr 11 3
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Philips Semiconductors Product specification
Quadrature demodulator TDA8042M

PINNING

SYMBOL PIN DESCRIPTION
IDET 1 AGC detector output signal GND1 2 ground VAGC 3 gain control input voltage IOUT 4 I channel amplifier output GND2 5 ground IFA 6 IF input A IFB 7 IF input B V
CC2
8 supply voltage 2 QOUT 9 Q channel amplifier output GND1 10 ground V
CC1
11 supply voltage 1 FDIV(B) 12 prescaler output B FDIV(A) 13 prescaler output A GND1 14 ground OSCB 15 oscillator tank circuit B OSCA 16 oscillator tank circuit A OSCDIS 17 oscillator disable input V
CC1
18 supply voltage 1 GND1 19 ground VTH 20 AGC threshold voltage input
handbook, halfpage
IDET VTH
1
GND1 GND1
2 3
VAGC V
IOUT OSCDIS
4 5
GND2 OSCA
IFA OSCB IFB GND1
V
CC2
QOUT FDIV(B)
GND1 V
TDA8042M
6 7 8 9
10
MBH967
20 19 18 17 16 15 14 13 12 11
CC1
FDIV(A)
CC1
Fig.2 Pin configuration.
1997 Apr 11 4
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Philips Semiconductors Product specification
Quadrature demodulator TDA8042M

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
CC
V
i
P
tot
T
stg
T
j
T
amb
Note
1. The operating ambient temperature can be extended up to +85 °C providing the supply voltage remains lower or equal to 5.2 V in order to maintain the junction temperature below 150 °C.

QUALITY SPECIFICATION

supply voltage 0.3 +6.0 V input voltage on all pins 0.3 V
CC
V total power dissipation 470 mW IC storage temperature 55 +150 °C junction temperature +150 °C operating ambient temperature 0 +70
(1)
°C
All pins withstand the ESD test in accordance with
“UZW-BO/FQ-B302 (machine model)”
. These numbers can be found in the
“UZW-BO/FQ-A302 (human body model)”
“Quality reference Handbook”
and with
. The handbook
can be ordered using the code 9397 750 00192.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air 120 K/W
1997 Apr 11 5
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Philips Semiconductors Product specification
Quadrature demodulator TDA8042M

CHARACTERISTICS

V
=5V; T
CC
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply
V
CC1
V
CC2
I
CC1
I
CC2
AGC
G
CR
G
VAGC
R
iVAGC
V
th
R
iVTH
maximum AGC detector output current
I
det
=25°C; R
amb
=1kΩ; measured in application circuit of Fig.4; unless otherwise specified.
L(IQ)
supply voltage 4.75 5.0 5.25 V supply voltage 4.75 5.0 5.25 V supply current V supply current V
CC1=VCC2 CC1=VCC2
=5.0V415161mA = 5.0 V 13 16.5 20 mA
gain control range 21 29 dB voltage gain control at pin 3 note 1
input level = V input level = V
i(RF)min i(RF)max
0.5 2V
3.5 4.5 V input resistance at pin 3 20 k AGC threshold voltage note 2
= 1.6 V (peak-to-peak value) 3.6 V
V
o
= 0.8 V (peak-to-peak value) 2.4 V
V
o
= 0.4 V (peak-to-peak value) 1.8 V
V
o
VTH input resistance 10 k
note 3 1 mA
(absolute value)
QPSK demodulator
f
i(RF)
R
i(RF)
X
i(RF)
V
i(RF)
E
Φ(I-Q)
RF input signal frequency 350 650 MHz RF input impedance (resistive part) f RF input impedance (reactive part) f
i(RF) i(RF)
operating RF input level note 1 57 78 dBµV phase matching error between I and Q
note 4 0.7 2 deg
channels
EG
G(I-Q)
tilt
gain matching error between I and Q channels note 5 0.15 0.8 dB gain tilt error between I and Q channels note 6 0.3 0.5 dB
F DSB noise figure source
impedance = 50 ; note 7
d
3(IQ)
third-order intermodulation distortion in I and
note 8 50 dB
Q channels
= 480 MHz 50 −Ω = 480 MHz 19 −Ω
13 17 dB
1997 Apr 11 6
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Philips Semiconductors Product specification
Quadrature demodulator TDA8042M
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Oscillator
f
osc
f
osc
N
osc
V
osc(dis)
Prescaler
V
OH
V
OL
δ output duty cycle 40 50 60 % DIV
spu(IQ)
I and Q internal filters
B
1
B
30
I and Q output amplifiers
V
O(IQ)(DC)
V
o(IQ)(p-p)
V
clip(p-p)
R
L(IQ)
R
o(IQ)
α
ct(I-Q)
Notes
1. The voltage gain control range (G 800 mV (peak-to-peak value) at I and Q outputs. The lowest control voltage corresponds to the highest sensitivity and gain.
2. Vth is the level of voltage to be applied at pin 20 to get a current I amplitude of the signal at I and Q outputs. The AGC threshold voltage can be set by a resistive voltage divider connected at pin 20. Without the external resistors Vthis set at a value close to 2.35 V.
3. The current I Vth.
4. The phase error is defined as the phase quadrature imbalance between I and Q channels.
5. The gain error is defined as the phase quadrature imbalance between I and Q channels.
6. The tilt is defined as the difference between the maximum and the minimum channel gain measured in a frequency band of ±30 MHz around f
oscillator frequency note 9 175 325 MHz frequency drift note 10 −−500 kHz
= ±5% −−100 kHz
V
CC
oscillator phase noise measured10 kHz
from f
; note 11
osc
−−91 dBc/Hz
oscillator disable voltage at pin 17
oscillator disabled −−1.0 V oscillator enabled 4.0 −−V
HIGH level output voltage note 12 4.0 −−V LOW level output voltage note 12 −−3.35 V
output spurious voltage at I and Q outputs note 13 −−50 dB
bandwidth for 1 dB attenuation 30 −−MHz bandwidth for 30 dB attenuation 450 MHz
I and Q channels DC output voltage 2.45 V I and Q channels output voltage
note 14 0.8 V
(peak-to-peak value) I and Q output clipping level
1.8 V
(peak-to-peak value) I and Q channels output load resistance note 15 500 −−Ω I and Q channels output resistance 67 −Ω crosstalk between I and Q channels 30 −−dB
) is defined as the DC voltage to be applied on pin 3 to get a signal level of
VAGC
of 0.5 mA at pin 1. This voltage depends on the
det
increases when the output level (at pins 4 and 9) increases above the value set by the adjustment of
det
. The specified tilt is the maximum tilt value found in one of the I and Q channels.
i(RF)
1997 Apr 11 7
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Philips Semiconductors Product specification
Quadrature demodulator TDA8042M
7. The specified noise figure is the maximum value obtained from I and Q channels noise measurement. The figure holds for the maximum gain (G
8. The specified intermodulation distortion is the minimum value obtained from intermodulation measurements in I and Q channels. The specified value is the minimum distance between wanted signal and intermodulation products measured at the output for a wanted output level of 0.8 V (peak-to-peak value).
9. The oscillator is tuned with an appropriate tank circuit designed for each frequency limit.
10. The drift of the oscillator frequency with temperature is defined for T circuit (see Fig.4) with a temperature compensated tank circuit. The temperature compensation used for this measurement is realized using the application which is depicted in Fig.3.
11. The phase noise is measured at the oscillator frequency (= 240 MHz). Due to the internal frequency doubler the phase noise at the input of the mixers will be 6 dB worse.
12. Measured with a high impedance load (RL>5kΩ) connected at pins 12 and 13.
13. The prescaler output spurious voltage at I and Q outputs are measured with respect to an output level of 800 mV (peak-to-peak value).
14. Measured with an input signal f
15. The load should be AC-coupled.
= 0.5 V).
VAGC
+ 500 kHz (i.e. 480.5 MHz).
i(RF)
=25°C. It is measured in the application
amb
handbook, full pagewidth
to pin 15
TOKO ref.:
100 082 93278
to pin 16
8.2 pF NP0
2.2 pF NP0
Fig.3 Temperature compensation circuit.
6 pF N470
1 pF N470
MBH969
1997 Apr 11 8
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Philips Semiconductors Product specification
Quadrature demodulator TDA8042M

APPLICATION INFORMATION

handbook, full pagewidth
NOT ON THE TESTBOARD
50
RF
5 V
1 k
H-183-4
test point
ANZAC
5 V
100 nF
100 nF
100
nF
100
nF
100
nF
1 k
1 k
5 k
10 nF
10 nF
5 V
GND1
VAGC
GND2
V
QOUT
GND1
IDET
IOUT
IFA
IFB
CC2
1
2
3
4
5
6
7
8
9
TDA8042M
20
19
18
17
16
15
14
13
12
1110
MBH970
VTH
100
nF
GND1
V
CC1
OSCDIS
OSCA
18 pF
OSCB
GND1
FDIV(A)
FDIV(B)
V
CC1
10 nF
10 nF
1 k
100
nF
100
nF
470
470
100
nF
+
5 V
TOKO ref.: 100 082 93278
5 V
5 V maximum
to
prescaler
Fig.4 Application diagram.
1997 Apr 11 9
Page 10
Philips Semiconductors Product specification
Quadrature demodulator TDA8042M

PACKAGE OUTLINE

SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
D
c
y
Z
20
pin 1 index
11
A
2
A
1
110
w M
b
e
p
E
H
E
detail X

SOT266-1

A
X
v M
A
Q
(A )
L
p
L
A
3
θ
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
mm
OUTLINE
VERSION
SOT266-1
A
max.
1.5
0.1501.4
1.2
b
3
p
0.32
0.20
0.20
0.13
0.25
IEC JEDEC EIAJ
UNIT A1A2A
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
(1)E(1)
cD
6.6
6.4
REFERENCES
4.5
0.65 1.0 0.2
4.3
1997 Apr 11 10
eHELLpQZywv θ
6.6
6.2
0.75
0.45
0.65
0.45
PROJECTION
0.13 0.1
EUROPEAN
(1)
0.48
0.18
ISSUE DATE
90-04-05 95-02-25
o
10
o
0
Page 11
Philips Semiconductors Product specification
Quadrature demodulator TDA8042M
SOLDERING Introduction
There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used.
This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our
“IC Package Databook”
Reflow soldering
Reflow soldering techniques are suitable for all SSOP packages.
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C.
Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C.
Wave soldering
Wave soldering isnot recommended for SSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices.
(order code 9398 652 90011).
If wave soldering cannot be avoided, the following conditions must be observed:
A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering technique should be used.
The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate solder thieves at the downstream end.
Even with these conditions, only consider wave soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1).
During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured.
Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.
1997 Apr 11 11
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Philips Semiconductors Product specification
Quadrature demodulator TDA8042M

DEFINITIONS

Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Apr 11 12
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Philips Semiconductors Product specification
Quadrature demodulator TDA8042M
NOTES
1997 Apr 11 13
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Philips Semiconductors Product specification
Quadrature demodulator TDA8042M
NOTES
1997 Apr 11 14
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Philips Semiconductors Product specification
Quadrature demodulator TDA8042M
NOTES
1997 Apr 11 15
Page 16
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© Philips Electronics N.V. 1997 SCA54 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Internet: http://www.semiconductors.philips.com
Printed in The Netherlands 547047/1200/01/pp16 Date of release: 1997 Apr 11 Document order number: 9397 750 00909
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