Datasheet TDA8010M Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TDA8010M; TDA8010AM

Low power mixers/oscillators
for satellite tuners

Objective specification
Supersedes data of 1996 Oct 08
File under Integrated Circuits, IC02

1996 Oct 24

Philips Semiconductors Objective specification

Low power mixers/oscillators
for satellite tuners

FEATURES

• Fully balanced mixer with common base input

• Wide input power and frequency range

• One-band 2 pin oscillator

• Local oscillator buffer and prescaler

• SAW filter IF preamplifier with gain control input and

switchable output

• Bandgap voltage stabilizer for oscillator stability

• External IF filter between the mixer output and the IF

amplifier input.

APPLICATIONS

• Down frequency conversion in DBS (Direct
Broadcasting Satellite) satellite receivers.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V
I

CC

f

RF

f

osc

NF
G
G

CC

M
max
min

supply voltage 4.5 5.0 5.5 V
supply current − 70 − mA
RF frequency range 700 − 2150 MHz
oscillator frequency 1380 − 2650 MHz
mixer noise figure corrected for image − 10 − dB
maximum total gain mixer plus IF − 40 − dB
minimum total gain mixer plus IF −−17 − dB

GENERAL DESCRIPTION

The TDA8010M; TDA8010AM are integrated circuits that
perform the mixer/oscillator function in satellite tuners.
The devices include a gain controlled IF amplifier that can
directly drive two single-ended SAW filters or a differential
SAW filter using a three function switchable output.
They contain an internal LO prescaler and buffer that is
compatible with the input of a terrestrial or satellite
frequency synthesizer. They are also suitable for digital TV
tuners. These devices are available in small outline
packages that give the designer the capability to design an
economical and physically small satellite tuner.

TDA8010M;

TDA8010AM

ORDERING INFORMATION

TYPE

NUMBER

TDA8010M
TDA8010AM

1996 Oct 24 2

NAME DESCRIPTION VERSION

SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1

PACKAGE

Philips Semiconductors Objective specification

Low power mixers/oscillators
for satellite tuners

BLOCK DIAGRAM

handbook, full pagewidth

CC

20 (1)
19 (2)

18 (3)

17 (4)
16 (5)

15 (6)
14 (7)

13 (8)

12 (9)

11 (10)

OSCILLATOR

LOOUT2
LOOUT1

LOGND

OSC2
OSC1

OSCGND

IFOUT2

V

IFGND

IFOUT1

LO
BUFFER

OUTPUT
SWITCH

DIVIDE-BY-2

PRE-SCALER

SWITCH

CONTROL

TDA8010M

TDA8010AM

V

CC

TDA8010M; TDA8010AM

STABILIZER

RF INPUT

STAGE

IF AMP

R

AGC

(20) 1

(19) 2

(18) 3
(17) 4
(16) 5
(15) 6
(14) 7

(13) 8
(12) 9

(11) 10

SC

V

CCM

RFIN1
RFIN2
MGND
MOUT1
MOUT2

IFIN1
IFIN2

AGC

The pin numbers given in parenthesis refer to the TDA8010AM.

Fig.1 Block diagram.

MGE506


1996 Oct 24 3

Philips Semiconductors Objective specification

Low power mixers/oscillators
for satellite tuners

PINNING

SYMBOL

TDA8010M TDA8010AM

SC 1 20 IF output switch control
V

CCM

RFIN1 3 18 RF input 1
RFIN2 4 17 RF input 2
MGND 5 16 ground for mixer
MOUT1 6 15 mixer output 1
MOUT2 7 14 mixer output 2
IFIN1 8 13 IF amplifier input 1
IFIN2 9 12 IF amplifier input 2
AGC 10 11 IF amplifier gain control input
IFOUT1 11 10 IF amplifier output 1
IFGND 12 9 ground for IF amplifier
V

CC

IFOUT2 14 7 IF amplifier output 2
OSCGND 15 6 ground for oscillator
OSC1 16 5 oscillator tuning circuit input 1
OSC2 17 4 oscillator tuning circuit input 2
LOGND 18 3 ground for local oscillator buffer
LOOUT1 19 2 local oscillator output 1
LOOUT2 20 1 local oscillator output 2

PINS

2 19 supply voltage for mixer

13 8 supply voltage

TDA8010M; TDA8010AM

DESCRIPTION

handbook, halfpage

SC

V

CCM

RFIN1
RFIN2

MGND
MOUT1
MOUT2

IFIN1
IFIN2

AGC

1
2
3
4
5
6
7
8
9

10

TDA8010M

MGE504

20
19
18
17
16
15
14
13
12
11

LOOUT2
LOOUT1
LOGND
OSC2
OSC1
OSCGND
IFOUT2
V

CC

IFGND
IFOUT1

Fig.2 Pin configuration (TDA8010M).

1996 Oct 24 4

handbook, halfpage

LOOUT2
LOOUT1

OSCGND

Fig.3 Pin configuration (TDA8010AM).

LOGND

OSC2
OSC1

IFOUT2

V

CC

IFGND

IFOUT1

1
2
3
4
5

TDA8010AM

6
7
8
9

10

MGE505

20
19
18
17
16
15
14
13
12
11

SC
V

CCM

RFIN1
RFIN2
MGND
MOUT1
MOUT2
IFIN1
IFIN2
AGC

Philips Semiconductors Objective specification

Low power mixers/oscillators

TDA8010M; TDA8010AM

for satellite tuners

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

CC

V

i(max)

I

source(max)

t

sc

T

stg

T

j

T

amb

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

HANDLING

supply voltage −0.3 +6.0 V
maximum input voltage on all pins −0.3 V

CC

V
maximum output source current − 10 mA
maximum short-circuit time on all outputs − 10 s
storage temperature −55 +150 °C
junction temperature − 150 °C
operating ambient temperature −20 +80 °C

thermal resistance from junction to ambient in free air 120 K/W

All pins withstand the ESD test in accordance with

“UZW-BO/FQ-B302 (machine model)”

.

“UZW-BO/FQ-A302 (human body model)”

and with

1996 Oct 24 5

Philips Semiconductors Objective specification

Low power mixers/oscillators

TDA8010M; TDA8010AM

for satellite tuners

CHARACTERISTICS

VCC=5V; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies

V

CC

I

CC

Mixer

f

RF

NF total noise figure (mixer plus IF);

G

M

G

max1

G

min1

G

max2

G

min2

Z

I(RF)

Z

O(RF)

IP3 third-order interception point see Fig.4 −2+2− dBm
IP2 second-order interception point see Fig.5 10 25 − dBm

=25°C; measured in application circuit of Fig.6; unless otherwise specified.

amb

supply voltage 4.75 5.0 5.25 V
supply current 60 70 80 mA

RF frequency range 700 − 2150 MHz

= 0.9VCC; fi= 920 MHz − 810dB

V

AGC

not corrected for image

= 0.9VCC; fi= 2150 MHz − 13 15 dB

V

AGC

available power gain for mixer RL= 2.2 kΩ−10 − dB
maximum total gain

(mixer + IFOUT1)
minimum total gain

fi= 920 MHz; notes 1 and 2 37 40 − dB

= 2150 MHz; notes 1 and 2 36 38 − dB

f

i

notes 1 and 2 −−30 −14 dB

(mixer + IFOUT1)
maximum total gain

(mixer + IFOUT2)
minimum total gain

fi= 920 MHz; notes 1 and 2 36 39 − dB

= 2150 MHz; notes 1 and 2 35 37 − dB

f

i

notes 1 and 2 −−30 −15 dB

(mixer + IFOUT2)
input impedance (Rs+Ls) from 920 to 2150 MHz 20 30 40 Ω

5 7.5 10 nH

output impedance (Rp//Cp)
(open collector)

fIF= 480 MHz 8 12 16 kΩ

450 550 650 fF

Local oscillator output

V

LO

SRF spurious signal on LO output

output voltage RL=50Ω 87 90 93 dBµV

R

=50Ω; note 3 −−35 −10 dB

L

with respect to LO output signal

LO

leak

local oscillator leakage RF input −−50 − dBm

IF output (mixer) −−35 − dBm

Oscillator

f

osc

f

osc(max)

f

shift

oscillator frequency range VCC= 4.5 to 5.5 V;

T

= −20 to +80 °C

amb

maximum oscillator frequency − 2700 − MHz
oscillator frequency shift VCC= 4.75 to 5.25 V;

at 2550 MHz

= 4.75 to 5.25 V;

V

CC

at 2650 MHz

f

drift

oscillator frequency drift ∆T=25°C; at 2550 MHz −−8−15 MHz

∆T=25°C;at 2650 MHz −−8−16 MHz

1996 Oct 24 6

1380 − 2650 MHz

−±350 ±500 kHz

−±400 ±600 kHz

Philips Semiconductors Objective specification

Low power mixers/oscillators

TDA8010M; TDA8010AM

for satellite tuners

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ΦN oscillator phase noise at 100 kHz 88 92 − dBc

at 10 kHz 62 69 − dBc

IF amplifier

f

IF

G

v(max)

G

v(min)

NF

IF

V

oIF

Z

O(IF)

Z

I(IF)

SW

iso

V

SW

R

I(AGC)

Notes

1. Maximum gain: V

2. Minimum gain: V

3. RF input power range = −70 to −20 dBm.

4. V

5. Switch isolation is defined at an IF output level of 77 dBµV; fIF= 480 MHz.

IF frequency range 60 − 625 MHz
maximum voltage gain note 1 − 40 − dB
minimum voltage gain note 2 −−30 − dB
IF noise figure note 4 − 8 − dB
output voltage level −−85 dBµV
output impedance single-ended − 50 −Ω
input impedance (Rp//Lp) 303336 Ω

579 nH
switch isolation note 5 33 36 − dB
switch control voltage IF1 on; IF2 off 0.8V

IF1 off; IF2 on 0.2V
differential output 0 − 0.07V

− V

CC

− 0.6V

CC

CC

CC

CC

AGC input resistance see Fig.6 − 4 − kΩ

= 0.9VCC; fIF= 480 MHz; IF output single-ended.

AGC

= 0.1VCC; fIF= 480 MHz; IF output single-ended.

AGC

= 0.9VCC; fIF= 480 MHz; R

AGC

source

= 100 Ω.

V
V
V

handbook, halfpage

2F1 − F2 F1 F2 2F2 − F1

390 420 450 480 (MHz)

REF is the level if F1 or F2 were at 480 MHz.
IP3 = IM3/2 + input level.
Input level: 2 ×−23 dBm.
Output level: 2 × 74 dBµV.

REF

IM3

MGE507

Fig.4 IP3 measurement method.

1996 Oct 24 7

handbook, halfpage

IM2

LO − F1 LO − F2 (F1 + F2) − LO

FIRF478 480 484 (MHz)

964 962 1926 (MHz)

MGE508

IP2 = IM2 + input level.
Input level: 2 ×−23 dBm.
Output level: 2 × 74 dBµV.

Fig.5 IP2 measurement method.

Philips Semiconductors Objective specification

Low power mixers/oscillators
for satellite tuners

APPLICATION INFORMATION

CC

V

10 nF

CCM

SC

V
19

20

STABILIZER

3.3 nF

RFIN1

18

RF INPUT

3.3 nF

RFIN2

17

STAGE

0.56 pF
33 Ω

MGND

16

L1

CC

V

MOUT1

15

3.3 kΩ

MOUT2

14

L2

3.3 pF

IFIN1

13

IF AMP

IFIN2

12

TDA8010M; TDA8010AM

2.7

pF

pF

MGE509

10

nF

CC

V

2.7

3.3 pF

AGC

11

AGC

R

ook, full pagewidth

DIVIDE-BY-2

1

LOOUT2

3.3 nF

50 Ω load

PRE-SCALER

LO

BUFFER

2

3

LOGND

LOOUT1

3.3 nF

22 kΩ

22 kΩ

4

OSC2

L3

BB833

12

kΩ

12

kΩ

OSCILLATOR

5

6

OSC1

OSCGND

1.5 pF

L3

22 kΩ

BB833

1 nF

VT

SWITCH

7

IFOUT2

22 kΩ

CONTROL

8
CC

V

3.3 nF
CC

V

Ω

150

SWITCH

OUTPUT

9

IFGND

10

nF

TDA8010AM

10

IFOUT1

3.3 nF

Ω

150

Fig.6 Application diagram.

2.2

µF

1996 Oct 24 8

L1: 5.5 turns; diameter = 5 mm.

Varicaps: Siemens BB833.

L2: 5.5 turns; diameter = 1.5 mm.

L3: micro-strip coil; L = 3.5 × 0.4 mm. No ground plane on the other side.

Philips Semiconductors Objective specification

Low power mixers/oscillators

TDA8010M; TDA8010AM

for satellite tuners

PACKAGE OUTLINE

SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm

20

D

c

y

Z

11

E

H

SOT266-1

A

X

v M

E

A

pin 1 index

110

w M

b

e

DIMENSIONS (mm are the original dimensions)

mm

A

max.

1.5

0.1501.4

1.2

0.25

b

3

p

0.32

0.20

UNIT A1A2A

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

p

cD

0.20

6.6

0.13

6.4

0 2.5 5 mm

scale

(1)E(1)

eHELLpQZywv θ

4.5

0.65 1.0 0.2

4.3

6.6

6.2

Q

A

2

A

1

detail X

0.65

0.75

0.45

0.45

(A )

L

p

L

A

3

θ

0.13 0.1

0.48

0.18

(1)

o

10

o

0

OUTLINE
VERSION

SOT266-1

IEC JEDEC EIAJ

REFERENCES

1996 Oct 24 9

EUROPEAN

PROJECTION

ISSUE DATE

90-04-05
95-02-25

Philips Semiconductors Objective specification

Low power mixers/oscillators
for satellite tuners

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

Reflow soldering

Reflow soldering techniques are suitable for all SSOP
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

Wave soldering isnot recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

(order code 9398 652 90011).

TDA8010M; TDA8010AM

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The longitudinal axis of the package footprint must

be parallel to the solder flow and must incorporate
solder thieves at the downstream end.

Even with these conditions, only consider wave
soldering SSOP packages that have a body width of

4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1996 Oct 24 10

Philips Semiconductors Objective specification

Low power mixers/oscillators

TDA8010M; TDA8010AM

for satellite tuners

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Oct 24 11