Datasheet TDA8010M-C1, TDA8010AM-C1-S1, TDA8010AM-C1 Datasheet (Philips)

DATA SH EET

Objective specification
Supersedes data of 1996 Oct 08
File under Integrated Circuits, IC02

1996 Oct 24

INTEGRATED CIRCUITS

TDA8010M; TDA8010AM

Low power mixers/oscillators
for satellite tuners

1996 Oct 24 2

Philips Semiconductors Objective specification

Low power mixers/oscillators
for satellite tuners

TDA8010M;

TDA8010AM

FEATURES

• Fully balanced mixer with common base input

• Wide input power and frequency range

• One-band 2 pin oscillator

• Local oscillator buffer and prescaler

• SAW filter IF preamplifier with gain control input and

switchable output

• Bandgap voltage stabilizer for oscillator stability

• External IF filter between the mixer output and the IF

amplifier input.

APPLICATIONS

• Down frequency conversion in DBS (Direct
Broadcasting Satellite) satellite receivers.

GENERAL DESCRIPTION

The TDA8010M; TDA8010AM are integrated circuits that
perform the mixer/oscillator function in satellite tuners.
The devices include a gain controlled IF amplifier that can
directly drive two single-ended SAW filters or a differential
SAW filter using a three function switchable output.
They contain an internal LO prescaler and buffer that is
compatible with the input of a terrestrial or satellite
frequency synthesizer. They are also suitable for digital TV
tuners. These devices are available in small outline
packages that give the designer the capability to design an
economical and physically small satellite tuner.

QUICK REFERENCE DATA

ORDERING INFORMATION

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CC

supply voltage 4.5 5.0 5.5 V

I

CC

supply current − 70 − mA

f

RF

RF frequency range 700 − 2150 MHz

f

osc

oscillator frequency 1380 − 2650 MHz

NF

M

mixer noise figure corrected for image − 10 − dB

G

max

maximum total gain mixer plus IF − 40 − dB

G

min

minimum total gain mixer plus IF −−17 − dB

TYPE

NUMBER

PACKAGE

NAME DESCRIPTION VERSION

TDA8010M

SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1

TDA8010AM

1996 Oct 24 3

Philips Semiconductors Objective specification

Low power mixers/oscillators
for satellite tuners

TDA8010M; TDA8010AM

BLOCK DIAGRAM

Fig.1 Block diagram.

handbook, full pagewidth

MGE506


DIVIDE-BY-2

PRE-SCALER

OSCILLATOR

STABILIZER

RF INPUT

STAGE

SWITCH

CONTROL

LO
BUFFER

IF AMP

OUTPUT
SWITCH

V

CC

20 (1)
19 (2)

18 (3)

17 (4)
16 (5)

15 (6)
14 (7)

13 (8)

12 (9)

11 (10)

(11) 10

(12) 9

(13) 8

(14) 7

(15) 6

(16) 5

(17) 4

(18) 3

(19) 2

(20) 1

LOOUT2
LOOUT1

LOGND

OSC2
OSC1

OSCGND

IFOUT2

V

CC

IFGND

IFOUT1

AGC

IFIN2

IFIN1

MOUT2

MOUT1

RFIN1

MGND

RFIN2

V

CCM

SC

TDA8010M

TDA8010AM

R

AGC

The pin numbers given in parenthesis refer to the TDA8010AM.

1996 Oct 24 4

Philips Semiconductors Objective specification

Low power mixers/oscillators
for satellite tuners

TDA8010M; TDA8010AM

PINNING

SYMBOL

PINS

DESCRIPTION

TDA8010M TDA8010AM

SC 1 20 IF output switch control
V

CCM

2 19 supply voltage for mixer
RFIN1 3 18 RF input 1
RFIN2 4 17 RF input 2
MGND 5 16 ground for mixer
MOUT1 6 15 mixer output 1
MOUT2 7 14 mixer output 2
IFIN1 8 13 IF amplifier input 1
IFIN2 9 12 IF amplifier input 2
AGC 10 11 IF amplifier gain control input
IFOUT1 11 10 IF amplifier output 1
IFGND 12 9 ground for IF amplifier
V

CC

13 8 supply voltage
IFOUT2 14 7 IF amplifier output 2
OSCGND 15 6 ground for oscillator
OSC1 16 5 oscillator tuning circuit input 1
OSC2 17 4 oscillator tuning circuit input 2
LOGND 18 3 ground for local oscillator buffer
LOOUT1 19 2 local oscillator output 1
LOOUT2 20 1 local oscillator output 2

Fig.2 Pin configuration (TDA8010M).

handbook, halfpage

SC

V

CCM

RFIN1
RFIN2

MGND
MOUT1
MOUT2

IFIN1
IFIN2

AGC

LOOUT2
LOOUT1
LOGND
OSC2

OSCGND
IFOUT2

OSC1

V

CC

IFGND
IFOUT1

1
2
3
4
5
6
7
8
9

10

11

12

20
19
18
17
16
15
14
13

TDA8010M

MGE504

Fig.3 Pin configuration (TDA8010AM).

handbook, halfpage

LOOUT2
LOOUT1

LOGND

OSC2
OSC1

OSCGND

IFOUT2

V

CC

IFGND

IFOUT1

SC
V

CCM

RFIN1
RFIN2

MOUT1
MOUT2

MGND

IFIN1
IFIN2
AGC

1
2
3
4
5
6
7
8
9

10

11

12

20
19
18
17
16
15
14
13

TDA8010AM

MGE505

1996 Oct 24 5

Philips Semiconductors Objective specification

Low power mixers/oscillators
for satellite tuners

TDA8010M; TDA8010AM

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

HANDLING

All pins withstand the ESD test in accordance with

“UZW-BO/FQ-A302 (human body model)”

and with

“UZW-BO/FQ-B302 (machine model)”

.

SYMBOL PARAMETER MIN. MAX. UNIT

V

CC

supply voltage −0.3 +6.0 V

V

i(max)

maximum input voltage on all pins −0.3 V

CC

V

I

source(max)

maximum output source current − 10 mA

t

sc

maximum short-circuit time on all outputs − 10 s

T

stg

storage temperature −55 +150 °C

T

j

junction temperature − 150 °C

T

amb

operating ambient temperature −20 +80 °C

SYMBOL PARAMETER VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air 120 K/W

1996 Oct 24 6

Philips Semiconductors Objective specification

Low power mixers/oscillators
for satellite tuners

TDA8010M; TDA8010AM

CHARACTERISTICS

VCC=5V; T

amb

=25°C; measured in application circuit of Fig.6; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies

V

CC

supply voltage 4.75 5.0 5.25 V

I

CC

supply current 60 70 80 mA

Mixer

f

RF

RF frequency range 700 − 2150 MHz

NF total noise figure (mixer plus IF);

not corrected for image

V

AGC

= 0.9VCC; fi= 920 MHz − 810dB

V

AGC

= 0.9VCC; fi= 2150 MHz − 13 15 dB

G

M

available power gain for mixer RL= 2.2 kΩ−10 − dB

G

max1

maximum total gain
(mixer + IFOUT1)

fi= 920 MHz; notes 1 and 2 37 40 − dB
f

i

= 2150 MHz; notes 1 and 2 36 38 − dB

G

min1

minimum total gain
(mixer + IFOUT1)

notes 1 and 2 −−30 −14 dB

G

max2

maximum total gain
(mixer + IFOUT2)

fi= 920 MHz; notes 1 and 2 36 39 − dB
f

i

= 2150 MHz; notes 1 and 2 35 37 − dB

G

min2

minimum total gain
(mixer + IFOUT2)

notes 1 and 2 −−30 −15 dB

Z

I(RF)

input impedance (Rs+Ls) from 920 to 2150 MHz 20 30 40 Ω

5 7.5 10 nH

Z

O(RF)

output impedance (Rp//Cp)
(open collector)

fIF= 480 MHz 8 12 16 kΩ

450 550 650 fF
IP3 third-order interception point see Fig.4 −2+2− dBm
IP2 second-order interception point see Fig.5 10 25 − dBm

Local oscillator output

V

LO

output voltage RL=50Ω 87 90 93 dBµV

SRF spurious signal on LO output

with respect to LO output signal

R

L

=50Ω; note 3 −−35 −10 dB

LO

leak

local oscillator leakage RF input −−50 − dBm

IF output (mixer) −−35 − dBm

Oscillator

f

osc

oscillator frequency range VCC= 4.5 to 5.5 V;

T

amb

= −20 to +80 °C

1380 − 2650 MHz

f

osc(max)

maximum oscillator frequency − 2700 − MHz

f

shift

oscillator frequency shift VCC= 4.75 to 5.25 V;

at 2550 MHz

−±350 ±500 kHz

V

CC

= 4.75 to 5.25 V;

at 2650 MHz

−±400 ±600 kHz

f

drift

oscillator frequency drift ∆T=25°C; at 2550 MHz −−8−15 MHz

∆T=25°C;at 2650 MHz −−8−16 MHz

1996 Oct 24 7

Philips Semiconductors Objective specification

Low power mixers/oscillators
for satellite tuners

TDA8010M; TDA8010AM

Notes

1. Maximum gain: V

AGC

= 0.9VCC; fIF= 480 MHz; IF output single-ended.

2. Minimum gain: V

AGC

= 0.1VCC; fIF= 480 MHz; IF output single-ended.

3. RF input power range = −70 to −20 dBm.

4. V

AGC

= 0.9VCC; fIF= 480 MHz; R

source

= 100 Ω.

5. Switch isolation is defined at an IF output level of 77 dBµV; fIF= 480 MHz.

ΦN oscillator phase noise at 100 kHz 88 92 − dBc

at 10 kHz 62 69 − dBc

IF amplifier

f

IF

IF frequency range 60 − 625 MHz

G

v(max)

maximum voltage gain note 1 − 40 − dB

G

v(min)

minimum voltage gain note 2 −−30 − dB

NF

IF

IF noise figure note 4 − 8 − dB

V

oIF

output voltage level −−85 dBµV

Z

O(IF)

output impedance single-ended − 50 −Ω

Z

I(IF)

input impedance (Rp//Lp) 303336 Ω

579 nH
SW

iso

switch isolation note 5 33 36 − dB

V

SW

switch control voltage IF1 on; IF2 off 0.8V

CC

− V

CC

V

IF1 off; IF2 on 0.2V

CC

− 0.6V

CC

V

differential output 0 − 0.07V

CC

V

R

I(AGC)

AGC input resistance see Fig.6 − 4 − kΩ

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Fig.4 IP3 measurement method.

REF is the level if F1 or F2 were at 480 MHz.
IP3 = IM3/2 + input level.
Input level: 2 ×−23 dBm.
Output level: 2 × 74 dBµV.

handbook, halfpage

MGE507

2F1 − F2 F1 F2 2F2 − F1

390 420 450 480 (MHz)

IM3

REF

Fig.5 IP2 measurement method.

IP2 = IM2 + input level.
Input level: 2 ×−23 dBm.
Output level: 2 × 74 dBµV.

handbook, halfpage

MGE508

LO − F1 LO − F2 (F1 + F2) − LO

FIRF478 480 484 (MHz)

964 962 1926 (MHz)

IM2

1996 Oct 24 8

Philips Semiconductors Objective specification

Low power mixers/oscillators
for satellite tuners

TDA8010M; TDA8010AM

APPLICATION INFORMATION

ook, full pagewidth

MGE509

DIVIDE-BY-2

PRE-SCALER

OSCILLATOR

STABILIZER

RF INPUT

STAGE

SWITCH

CONTROL

LO

BUFFER

IF AMP

OUTPUT

SWITCH

V

CC

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

SC

V

CCM

RFIN1

RFIN2

MGND

MOUT1

MOUT2

IFIN1

IFIN2

AGC

IFOUT1

IFGND

V

CC

IFOUT2

OSCGND

LOGND

OSC1

OSC2

LOOUT1

LOOUT2

TDA8010AM

R

AGC

3.3 nF

150

Ω

3.3 nF

150

Ω

10

nF

V

CC

22 kΩ

22 kΩ

22 kΩ

22 kΩ

1.5 pF

L3

L3

BB833

BB833

1 nF

12

kΩ

12

kΩ

2.2

µF

VT

3.3 nF

3.3 nF

50 Ω load

10

nF

3.3 pF

2.7

pF

2.7

pF

3.3 pF

L2

3.3 kΩ

V

CC

33 Ω

L1

0.56 pF

3.3 nF

3.3 nF

V

CC

10 nF

Fig.6 Application diagram.

L1: 5.5 turns; diameter = 5 mm.

L2: 5.5 turns; diameter = 1.5 mm.

L3: micro-strip coil; L = 3.5 × 0.4 mm. No ground plane on the other side.

Varicaps: Siemens BB833.

1996 Oct 24 9

Philips Semiconductors Objective specification

Low power mixers/oscillators
for satellite tuners

TDA8010M; TDA8010AM

PACKAGE OUTLINE

UNIT A1A2A

3

b

p

cD

(1)E(1)

(1)

eHELLpQZywv θ

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

0.1501.4

1.2

0.32

0.20

0.20

0.13

6.6

6.4

4.5

4.3

0.65 1.0 0.2

6.6

6.2

0.65

0.45

0.48

0.18

10

0

o

o

0.13 0.1

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

0.75

0.45

SOT266-1

90-04-05
95-02-25

w M

θ

A

A

1

A

2

b

p

D

H

E

L

p

Q

detail X

E

Z

e

c

L

v M

A

X

(A )

3

A

y

0.25

110

20

11

pin 1 index

0 2.5 5 mm

scale

SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm

SOT266-1

A

max.

1.5

1996 Oct 24 10

Philips Semiconductors Objective specification

Low power mixers/oscillators
for satellite tuners

TDA8010M; TDA8010AM

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

(order code 9398 652 90011).

Reflow soldering

Reflow soldering techniques are suitable for all SSOP
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

Wave soldering isnot recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The longitudinal axis of the package footprint must

be parallel to the solder flow and must incorporate
solder thieves at the downstream end.

Even with these conditions, only consider wave
soldering SSOP packages that have a body width of

4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1996 Oct 24 11

Philips Semiconductors Objective specification

Low power mixers/oscillators
for satellite tuners

TDA8010M; TDA8010AM

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.