Datasheet tda8003ts DATASHEETS (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TDA8003TS

2

I

C-bus SIM card interface

Product specification
Supersedes data of 2000 Feb 29
File under Integrated Circuits, IC02

2000 Apr 20

Philips Semiconductors Product specification

I2C-bus SIM card interface

FEATURES

• Subscriber Identification Module (SIM) cardinterface in
accordancewithGSM11.11,GSM11.12(GlobalSystem
for Mobile communication) and ISO 7816 requirements

• VCCregulation (3 or 5 V ±8%) with controlled rise and
fall times

• Card take-off protection

• Oneprotectedandbufferedpseudo-bidirectionalI/O line

(I/O referenced to VCC and SIMI/O referenced to V

• Clock generation (up to 10 MHz) with synchronous start
and frequency doubling

• Clock stop LOW, clock stop HIGH or 1.25 MHz (from
internal oscillator) for cards Power-down mode

• Automatic activation and deactivation sequences of an
independent sequencer

• Automatic processing of pin RST with count of the CLK
cycles for start of the Answer To Reset (ATR)

• Warm reset command

• Supply voltage supervisor for Power-on reset, spike

killing and emergency deactivation in case of supply
drop-out

• DC-to-DC converter (doubler, tripler or follower)
allowing operation in a 3 or 5 V environment
(2.5 ≤ VDD≤ 6V)

• EnhancedElectrostatic Discharge (ESD) protections on
card side (6 kV minimum)

• Power-down mode with several active features and
current reduction

• Off mode with 2 µA current

• Control from a microcontroller via a 400 kHz slave

I2C-bus (4 possible addresses: 48H, 4AH, 4CH
and 4EH)

• Four parallel devices possible due to 2 sub-address
wires

• Interface signals supplied by an independent voltage
(1.5 ≤ V

DDI

≤ 6 V).

DDI

TDA8003TS

APPLICATIONS

• GSM mobile phones

)

• SAM interfaces in banking terminals

• Portable card readers, etc.

GENERAL DESCRIPTION

The TDA8003TS is a low cost one chip SIM interface, in
accordance with GSM11.11, GSM11.12 and EMV96
(Europay, Mastercard, Visa) with card current limitation.
Controlled by I2C-bus, it is optimized in terms of board
space, external components count and connection count
(see Chapter “Application information”).

The integrated DC-to-DC converter ensures full
cross-compatibility between 3 or 5 V cards and 3 or 5 V
environments. The very low-power consumption in
Power-down mode and Off mode saves battery power.

ORDERING INFORMATION

TYPE

NUMBER

TDA8003TS/C1 SSOP24 plastic shrink small outline package; 24 leads; body width 5.3 mm SOT340-1
TDA8003TS/C2 SSOP24 plastic shrink small outline package; 24 leads; body width 5.3 mm SOT340-1

2000 Apr 20 2

NAME DESCRIPTION VERSION

PACKAGE

Philips Semiconductors Product specification

I2C-bus SIM card interface

TDA8003TS

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

DD

I

DD

supply voltage on pins V
and V

DDP

supply current on pins V
and V

DDP

DDS

DDS

Off mode; VDD=3V −−2µA
Power-down mode; V

DD

=3V;

2.5 − 6V

−−500 µA
VCC=5V; ICC= 100 µA; SIMCLK
connected to PGND or V

DDI

;

CLK is stopped

V

DDI

V

CC

active mode; V
ICC= 6 mA; f

active mode; V
ICC= 10 mA; f

active mode; V
ICC= 6 mA; f

active mode; V
ICC= 10 mA; f

interface signal supply voltage 1.5 − 6V
card supply voltage 5 V card; active mode;

=3V; VCC=3V;

DD

= 3.25 MHz

CLK

= 3 V; VCC=5V;

DD

= 3.25 MHz

CLK

= 5 V; VCC=3V;

DD

= 3.25 MHz

CLK

= 5 V; VCC=5V;

DD

= 3.25 MHz

CLK

−−18 mA

−−50 mA

−−10 mA

−−30 mA

4.6 5 5.4 V
0<ICC< 15 mA; 40 nAs dynamic
load on 200 nF capacitor

3 V card; active mode;
0<I

< 10 mA; 24 nAs dynamic

CC

2.75 3 3.25 V

load on 200 nF capacitor

SR slew rate on V
t

de

t

act

f

i(SIMCLK)

T

amb

deactivation time −−120 µs
activation time −−150 µs
clock input frequency 0 − 20 MHz
operating ambient temperature −40 − +85 °C

(rise and fall) C

CC

5 V card; bit PDOWN = 1; I
3 V card; bit PDOWN = 1; I

= 200 nF 0.05 − 0.25 V/µs

L(max)

< 5 mA 4.6 − 5.4 V

CC

< 5 mA 2.75 − 3.25 V

CC

2000 Apr 20 3

Philips Semiconductors Product specification

I2C-bus SIM card interface

BLOCK DIAGRAM

handbook, full pagewidth

VUP

8

100 nF

3

PGND

100 nF

S3
4

DC-TO-DC

CONVERTER

S4
6

100 nF

S1
2

S2
7

V

DDP

2.2 µF

5

V

DDS

100 nF

14

VOLTAGE

SUPERVISOR

TDA8003TS

21

SIMERR

15

DEL

10 nF

TDA8003TS

SEQUENCER

I/O

12

13

INTERNAL

9

11

16

ANALOG

DRIVERS

AND

PROTECTIONS

OSCILLATOR

10

SGND

I2C-BUS

INTERFACE

AND

REGISTERS

CLOCK

COUNTER

CLOCK

CIRCUITRY

V

CC

200 nF

RST

CLK

PRES

18

23
22
19
20

17

24

MGR434

V

DDI

SAD1
SAD0
SDA
SCL

1

PWROFF

SIMI/O

SIMCLK

Fig.1 Block diagram.

2000 Apr 20 4

Philips Semiconductors Product specification

I2C-bus SIM card interface

TDA8003TS

PINNING

SYMBOL PIN DESCRIPTION

PWROFF 1 control input for entering the Off mode (active LOW)
S1 2 capacitor connection for the DC-to-DC converter (between S1 and S2)
PGND 3 power ground
S3 4 capacitor connection for the DC-to-DC converter (between S3 and S4)
V

DDP

5 power supply voltage
S4 6 capacitor connection for the DC-to-DC converter (between S3 and S4)
S2 7 capacitor connection for the DC-to-DC converter (between S1 and S2)
VUP 8 DC-to-DC converter output (must be decoupled with 100 nF to ground)
I/O 9 input/output to and from the card reader (C7I); see Fig.7
SGND 10 signal ground
CLK 11 clock output to the card reader (C3I)
V

CC

12 supply voltage to the card reader (C1I)
RST 13 reset output to the card reader (C2I)
V

DDS

14 signal supply voltage
DEL 15 external capacitor connection for the delay on voltage supervisor
PRES 16 card presence indication input (active LOW); note 1
SIMI/O 17 input/output to and from the microcontroller (internal 20 kΩ pull-up resistor connected to V
V

DDI

SDA 19 I
SCL 20 I
SIMERR 21 interrupt output (active LOW; internal 100 kΩ pull-up resistor connected to V
SAD0 22 I
SAD1 23 I

18 supply voltage for the interface signals with the system

2

C-bus serial data input/output

2

C-bus serial clock input

2

C-bus slave address selection input

2

C-bus slave address selection input

DDI

)

SIMCLK 24 external clock input

DDI

)

Note

1. Card presence input with negative current source. To be used with the card reader switch connected to V
or V

. The switch is normally closed when the card is not present. If the switch connection is open-circuit or pin 16

DDP

is not connected, then the interface will always detect a present card (see Fig.7).

2000 Apr 20 5

DDS

Philips Semiconductors Product specification

I2C-bus SIM card interface

handbook, halfpage

PWROFF

S1

PGND

S3

V

DDP

S4
S2

VUP

I/O

SGND

CLK

V

CC

1
2
3
4
5
6

TDA8003TS

7
8

9
10
11
12

MGR435

24
23
22
21
20
19
18
17

16
15
14
13

SIMCLK
SAD1
SAD0

SIMERR
SCL
SDA
V

DDI

SIMI/O
PRES
DEL
V

DDS

RST

TDA8003TS

Fig.2 Pin configuration.

FUNCTIONAL DESCRIPTION

Figure 1 shows the block diagram of the TDA8003TS.
The functional blocks are described in the following
sections. It is assumed that the reader of this specification
is aware of GSM11.11 and ISO 7816 terminology.

2

C-bus control

I

The I2C-bus interface is used:

• To configure the clock to the card in active mode
(1⁄2f

SIMCLK

and1⁄4f

SIMCLK

)

• To configure the clock to the card in power reduction
mode (stop LOW, stop HIGH or ±1.25 MHz derived
from the internal oscillator)

• To select operation with a 3 or 5 V card

• To start or stop sessions (cold reset)

• To initiate a warm reset

• To enter or leave the Power-down mode

• To request the status (card present or not, hardware

problem occurred, unresponsive card after activation,
supplydrop-outdetected by the voltage supervisor, card
powered or not)

• To configure SIMI/O and I/O in high-impedance (for use
of several TDA8003TS in parallel).

The structure of the I

2

C-bus data frames is as follows:

• Commands to the TDA8003TS:
– START/ADDRESS/WRITE
– COMMAND BYTE
– STOP.
The fixed address is 01001XY. X and Y are defined by

the logic levels on pins SAD1 and SAD0 as shown in
Table 1 (connect to ground for logic 0; connect to V
for logic 1). The command bits are described in Table 2.
The commands are executed on the rising edge of the
9th SCL pulse.

• Status from the TDA8003TS (see Table 4). The fixed
address is 01001XY. X and Y are defined by the logic
levels on pins SAD1 and SAD0 as shown in Table 1.

Table 1 Address selections

ADDRESS SAD1 SAD0

48H 0 0
4AH 0 1

4CH 1 0

4EH 1 1

DDI

2000 Apr 20 6

Philips Semiconductors Product specification

I2C-bus SIM card interface

TDA8003TS

Table 2 Description of the command bits; (all bits are cleared at reset)

SYMBOL BIT DESCRIPTION

START/STOP 0 Logic1 initiates an activation sequence and a cold reset procedure. Logic 0 initiates a

deactivation sequence.

WARM 1 Logic 1 initiates a warm reset procedure. TDA8003TS/C1:warm reset performed only

when the 2 times 45000 CLK pulses have expired without answer from the card.
TDA8003TS/C2:warm reset performed whateverthe card has answered or not at the

cold reset procedure but the count is 2 times 44745 CLK pulses.

3 V/5 VN 2 Logic 1 sets the card supply voltage V

to 3 V. Logic 0 sets VCC to 5 V.

CC

PDOWN 3 Logic 1 applies on CLK the frequency defined by bits CLKPD1 and CLKPD2, and

enters a reduced consumption mode. Logic 0 sets the circuit back to normal mode.
CLKPD1 4 Bits 4 and 5 determine the clock to the card at power-down as shown in Table 3.
CLKPD2 5
DT/DFN 6 Logic 1 sets f

CLK

to1⁄2f

(in active mode). Logic 0 sets f

SIMCLK

CLK

to1⁄4f

SIMCLK

.

I/OEN 7 Logic 1 will transfer I/O to SIMI/O. Logic 0 sets I/O and SIMI/O to high-impedance.

Table 3 Clock to the card at power-down

BIT 4 BIT 5 FUNCTION

0 0 clock stop LOW
0 1 clock stop HIGH
1 0 clock is

1

⁄2f

osc

1 1 no change

Table 4 Description of the status bits; note 1

SYMBOL BIT DESCRIPTION

PRES 0 Logic 1 when the card is present. Logic 0 when the card is not present.
PRESL 1 Logic 1 when the card has been extracted or inserted. Logic 0 when the status is

read-out.

− 2 Bit 2 is not used and is fixed to logic 0.
SUPL 3 Logic 1 when the voltage supervisor has signalled a fault. Logic 0 when the status is

read-out.
PROT 4 Logic 1 when an overload has occurred during a session. Logic 0 when the status is

read-out.
MUTE 5 TDA8003TS/C1: Logic 1 when a card has not answered after 2 times 45000 CLK

pulses. Logic 0 when the status is read-out.

TDA8003TS/C2: Same as for C1, but the count is 2 times 44745 CLK pulses.
EARLY 6 Logic 1 when a card has answered between 200 and 352 CLK cycles. Logic 0 when

the status is read-out.
ACTIVE 7 Logic 1 when the card is power-on. Logic 0 when the card is power-off.

Note

1. In case of card extraction, supply drop-out or overload detection within a session, the card will be automatically
deactivated, SIMERR pulled LOW, bit START = 0 and the corresponding status bit = 1. The status bit will be logic 0
and SIMERR will be released when the microcontroller reads out the status register, on the 7th SCL pulse. After a
supply drop-out, SIMERR will be released at the end of the alarm pulse and bit SUPL = 1.

2000 Apr 20 7

Philips Semiconductors Product specification

I2C-bus SIM card interface

Power supply

The circuit operates within a supply voltage range of

2.5 to 6 V. The supply pins are V

V

and PGND only supply the DC-to-DC converter for

DDP

the analog drivers to the card and must be decoupled
externallybecauseofthe large current spikes that the card
and the DC-to-DC converter can create. An integrated
spike killer ensures the card contacts to remain inactive
during power-up or power-down. An internal voltage
reference is generated for the DC-to-DC converter, the
voltage supervisor and the VCC generator.

All interface signals with the microcontroller (PWROFF,
SIMCLK, SAD1, SAD0, SIMERR, SCL, SDA and SIMI/O)
are referenced to a separate supply pin V
be different from VDD (1.5 ≤ V

DDI

The pull-up resistors on bus lines SDA and SCL may be
referenced to a voltage higher than V
use of peripherals which do not operate at V

and SGND. Pins

DDS

DDI

≤ 6 V).

. This allows the

DDI

, which may

.

DDI

TDA8003TS

The voltage supervisor (see Fig.3) senses V
generates an alarm pulse, whose length tW is defined by
an external capacitor connected to pin DEL, when VDD is
too low to ensure proper operation (1 ms per 1 nF typical).

During this alarm pulse, SIMERR is LOW and the I2C-bus
is unresponsive. SIMERR goes back to HIGH, and the
I2C-bus becomes operational at the end of this alarm
pulse. Bit SUPL is set as long as the status has not been
read.

It is also used to either block any spurious signals on card
contacts during microcontroller reset, or to force an
automatic deactivation of the contacts in the event of
supply drop-out.

Outside a card session, SIMERR is LOW as long as the
voltage supervisor is active. If a supply drop-out occurs
during a session, SIMERR falls to LOW, bit START is
cleared and an automatic deactivation is initiated.

DDS

. It

handbook, full pagewidth

V

DDS

DEL

SIMERR

2

I

C-bus unresponsive

t

W

status read

after event

2

I

C-bus OK

t

W

2

C-bus

I

unresponsive

I2C-bus OK

I2C-bus

unresponsive

MGR436

Fig.3 Voltage supervisor.

2000 Apr 20 8

Philips Semiconductors Product specification

I2C-bus SIM card interface

DC-to-DC converter

The whole circuit is powered by V
VCCgenerator, the other card contact buffers and the
interface signals.

The DC-to-DC converter acts as a doubler or a tripler,
depending on the supply voltage VDDand the card supply
voltage VCC. There are basically four possible situations:

• VDD= 3 V and VCC= 3 V. The DC-to-DC converter acts

as a doubler with a regulation of V

4.5 V

• VDD= 3 V and VCC= 5 V. The DC-to-DC converter acts

as a tripler with a regulation of V

6.5 V

• VDD= 5 V and VCC= 3 V. The DC-to-DC converter is

disabled and VDD is applied to pin VUP

• VDD= 5 V and VCC= 5 V. The DC-to-DC converter acts

as a doubler with a regulation of V

6.5 V.

The supply voltage is recognized by the TDA8003TS at
approximately 3.75 V for the C1 and 3.3 V for the C2.

When a card session is requested by the microcontroller,
thesequencerwill first start the DC-to-DCconverter,which
is a switched capacitor type, clocked by an internal
oscillator at a frequency f
The output voltage V

of approximately 2.5 MHz.

osc

is regulated at approximately

VUP

4.5 or 6.5 V and subsequently fed to the VCCgenerator.

VCC and PGND are used as a reference for all other card
contacts.

Power-down mode

The Power-down mode is used for current consumption
reduction when the card is in Sleep mode.

To enter Power-down mode, the microcontroller must first
select CLK in this mode (stop LOW, stop HIGH or

1.25 MHz from the internal oscillator) with bits CLKPD1

and CLKPD2.Subsequently, themicrocontrollersends the
command PDOWN, CLK is switched to the value
predefined by bits CLKPD1 and CLKPD2, and SIMCLK
may be stopped (HIGH or LOW).

If the selected CLK is stopped, the biasing currents in the
buffers to the card will be reduced. The voltage supervisor
and all control functions also remain active. The maximum
current taken by the card in this mode when CLK is
stopped is assumed to be less than 5 mA.

Before leaving the Power-down mode, the clock signal
must first be applied to SIMCLK, and then bit PDOWN
must be set to logic 0.

, except for the

DDS

at approximately

VUP

at approximately

VUP

at approximately

VUP

TDA8003TS

Off mode

The Off mode is entered when the PWROFF signal is
LOW. In this mode, no function is valid. This mode avoids
switching off the power supply of the device, and gives a
current consumption less than 2 µA. Before entering the
Off mode, the card must be deactivated.

The Off mode is resumed when the PWROFF signal
returns to HIGH. This re-initializes the voltage supervisor,
and has the same effect as a reset of the device. As long
as the device is not ready to operate, the SIMERR signal
will remain LOW.

Sequencer and clock counter

The sequencer handles the ensuring activation and
deactivation sequences in accordance with GSM11.11
and ISO 7816, even in case of emergency (card take-off,
short circuit and supply drop-out). The sequencer is
clocked with the internal oscillator frequency f

The activation is initiated with the START command (only
ifthecardispresent, and if the voltage supervisor does not
detect a fault on the supply). During activation, VCC goes
HIGH and subsequently I/O is enabled and CLK is started
with RST = LOW. The clock counter counts the CLK
pulses till a start bit is detected on I/O.

After45000 CLK pulses for the C1 (44745 for the C2), if no
start bit on I/O has been detected, the sequencer toggles
RST to HIGH, and counts again 45000 CLK pulses
(44745 for the C2). If, again, no start bit has been
detected, SIMERR will be pulled LOW and the information
of bit MUTE is set in the status register.

If a start bit has been detected during the two 45000 CLK
pulse slots (44745 for the C2), the clock counter is
stopped, RST is kept at the same level and the session
can go on between the card and the system.

The clock counter does not take care ofany start bit during
the 200 first CLK pulses of both slots; if a start bit is
detected between 200 and 352 CLK pulses of both slots,
then SIMERR will be pulled LOW and the information of
bit EARLY is set in the status register.

The deactivation is initiated either by the microcontroller
(STOP command), or automatically by the TDA8003TS in
case of card take-off, short circuit or supply voltage
drop-out detected by the voltage supervisor. During
deactivation, RST will go LOW, CLK is stopped, I/O is
disabled and VCC goes LOW.

osc

.

2000 Apr 20 9

Philips Semiconductors Product specification

I2C-bus SIM card interface

Clock circuit

The clock to the card is either derived from pin SIMCLK
(2 to 20 MHz) or from the internal oscillator.

During a card session, f

1

⁄2f

SIMCLK

or1⁄4f

SIMCLK

For the card Sleep mode, CLK may be chosen stop LOW,
stop HIGH or1⁄2f

(1.25 MHz) with bits CLKPD1 and

osc

CLKPD2. This predefined value will be applied to CLK
when bit PDOWN is set to logic 1.

ThefirstCLK pulse has the correctwidth,andallfrequency
changes are synchronous, ensuring that no pulse is
smaller than 45% of the shortest period.

Thedutycycle is within 45 and 55% in stablestate,therise
and fall times are less than 8% of the period and
precaution has been taken so that there is no overshoot or
undershoot.

Activation sequence

Figure 4 shows the activation sequence. When the card is
inactive, VCC, CLK, RST and I/O are LOW, with
low-impedance with respect to ground. The DC-to-DC
converteris stopped. SIMI/O is pulled HIGH at V
20 kΩpull-upresistor.Whenall conditions are met (supply
voltage, card present, no hardware problems), the
microcontroller may initiate an activation sequence by
setting bit START to logic 1 (t0) via the I2C-bus:

1. The DC-to-DC converter is started (t1).

2. VCC starts rising from 0 to 3 or to 5 V according to
3 V/5 VN control bit with a controlled rise time of

0.17 V/µs typically (t2).

3. I/O buffer is enabled in reception mode (t3).

4. CLK is sent to the card reader with RST = LOW, and
the count of 45000 (44745 for C2) CLK pulses is
started (t4=t

act

).

5. If a start bit is detected on I/O, the clock counter is
stopped with RST = LOW. If not, RST = HIGH, and a
new count of 45000 (44745 for C2) CLK pulses is
started (t5).

may be chosen to be

CLK

depending on bit DT/DFN.

DDI

viathe

TDA8003TS

If a start bit is detected on I/O and the clock counter is
stoppedwithRST = HIGH, the card session may continue.
If not, bit MUTE is set in the status register and SIMERR is
pulled LOW. The microcontroller may initiate a
deactivation sequence by setting bit START to logic 0.

If a start bit is detected during the 200 first CLK pulses of
each count slot, then it will not be taken into account. If a
start bit is detected during 200 and 352 CLK pulses of
each slot, then bit EARLY is set in the status register and
SIMERR is pulled LOW. The microcontroller may initiate a
deactivation sequence by setting bit START to logic 0.

The sequencer is clocked by1⁄64f
interval T of 25 µs typically. Thus t1=0to1⁄64T;
t2=t1+3⁄2T; t3=t1+7⁄2T; t4=t1+ 4T and t5 depends on
the SIMCLK frequency.

Deactivation sequence

Figure 5 shows the deactivation sequence. When the
session is completed, the microcontroller sets bit START
to logic 0. The circuit will execute an automatic
deactivation sequence:

1. Card reset, RST falls to LOW (t10).

2. CLK is stopped (t11).

3. I/O falls to LOW (t12).

4. VCCfalls to 0 V with typically 0.17 V/µs slew rate (t13).
The deactivation is completed when VCC reaches

0.4 V (tde).

5. The DC-to-DC converter is stopped and CLK, RST,
VCC and I/O become low-impedance with respect to
PGND (t14).

Where t10<1⁄64T; t11=t10+1⁄2T; t12=t10+T;
t13=t12+5µs and t14=t10+ 4T.

which leads to a time

osc

2000 Apr 20 10

Philips Semiconductors Product specification

I2C-bus SIM card interface

handbook, full pagewidth

START

V

CC

I/O

CLK

RST

SIMI/O

t0, t1t

2

3

t4 (= t

)t

act

the 200 first CLK pulses are masked

TDA8003TS

MGR437

t

5

Answer To Reset (ATR) begin

handbook, full pagewidth

START

RST

CLK

I/O

V

CC

Fig.4 Activation sequence.

t

10t11

t

13

t

12

t

t

14

de

MGR438

Fig.5 Deactivation sequence.

2000 Apr 20 11

Philips Semiconductors Product specification

I2C-bus SIM card interface

Protections

The following main hardware fault conditions are
monitored by the circuit:

• Short circuits between VCC and other contacts

• Card take-off during transaction

• Supply drop-out.

When one of these problems is detected during a card
session, the security logic block pulls SIMERR to LOW, to
warn the microcontroller and initiates an automatic
deactivation of the contacts (see Fig.6).

I/O circuit

The Idle state is realized by both I/O and SIMI/O being
pulled HIGH (via a 10 kΩ pull-up resistor from I/O to V
and via a 20 kΩ pull-up resistor from SIMI/O to V

I/O is referenced to VCCand SIMI/O to V
operation with VCC≠ VDD≠ V

DDI

.

, thus allowing

DDI

DDI

CC

).

TDA8003TS

When configuration bit I/OEN is logic 0, then I/O and
SIMI/O are independent, which allows parallelization of
several TDA8003TS with only one I/O line on the
microcontroller side (up to 4 different I2C-bus addresses).

When bit I/OEN is logic 1, then the data transmission
between I/O and SIMI/O is enabled.

The first side on which a falling edge occurs becomes the
master.Ananti-latch circuit disables the detectionoffalling
edges on the other side, which becomes a slave.

After a delay time td (<500 ns) on the falling edge, the
N transistor on the slave side is turned on, thus
transmitting the logic 0 present on the master side.

When the master goes back to logic 1, the P transistor on
the slave side is turned on during td, and then both sides
return to their Idle states.

The maximum frequency on these lines is 1 MHz.

handbook, full pagewidth

START

SIMERR

RST

CLK

I/O

V

CC

status readout

MGR439

Fig.6 Emergency deactivation.

2000 Apr 20 12

Philips Semiconductors Product specification

I2C-bus SIM card interface

TDA8003TS

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
V

DDP
DDS
DDI
i(n)

power supply voltage −0.5 +6.5 V
signal supply voltage −0.5 +6.5 V
interface signal supply voltage −0.5 +6.5 V
input voltage

on pins 1, 17, 21 and 24 −0.5 +6.5 V
on pins 15, 16, 22 and 23 −0.5 V

DDS

+ 0.5 V
on pins 19 and 20 −0.5 +6.5 V
on pins 9, 11 and 13 −0.5 V

+ 0.5 V

CC

on pin 12 −0.5 +6.5 V
on pin 8 −0.5 +7.5 V
on pins 2, 4, 6 and 7 −0.5 V

I

i(n)

DC input current

VUP

+ 0.5 V

on pins 1, 17, 19, 20, 21, 22, 23 and 24 −5+5mA
on pin 15 −5 +10 mA

I

i/o(n)

DC input/output current

on pins 2, 4, 6, 7 and 8 −40 +40 mA
on pin 16 −5+5mA

I

i/o(17)

P

tot

T

j

T

stg

V

esd(n)

transient input/output current on pin 17 duration 1ms −40 +40 mA
continuous total power dissipation T

= −40 to +85 °C − 230 mW

amb

operating junction temperature − 125 °C
IC storage temperature −55 +150 °C
electrostatic discharge voltage

on pins 9, 11, 12, 13 and 16 −6+6kV
on any other pin −2+2kV

HANDLING

Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handle Metal Oxide Semiconductor (MOS) devices.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient in free air 102 K/W

2000 Apr 20 13

Philips Semiconductors Product specification

I2C-bus SIM card interface

TDA8003TS

CHARACTERISTICS

VDD=3V; V

= 1.5 V; f

DDI

SIMCLK

= 13 MHz; f

= 3.25 MHz; T

CLK

=25°C; unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies

V

DD

I

DD

supply voltage on pins V
and V

DDP

supply current on pins V
and V

DDP

DDS

DDS

Off mode −−2µA
inactive mode −−50 µA
Power-down mode; VCC=5V;

2.5 − 6.0 V

−−500 µA
ICC= 100 µA; SIMCLK connected
to SGND or V

active mode; V
active mode; V

; CLK is stopped

DDI

=3V; ICC=6mA −−18 mA

CC
CC

=5V;

−−50 mA
ICC=10mA

active mode; V

=5V; VCC=3V;

DD

−−10 mA
ICC=6mA

active mode; V

=5V; VCC=5V;

DD

−−30 mA
ICC=10mA

V

DDI

I

DDI

V

th(VDD)

V

hys

V

th(DEL)

V

DEL

I

ch(DEL)

I

dch(DEL)

t

W

interface signal supply voltage 1.5 − 6V
interface signals supply

current

threshold voltage on V
hysteresis voltage on V

DD

th(VDD)

SIMCLK connected to
PGND or V

f

SIMCLK

DDI

= 13 MHz; V

= 1.5 V −−120 µA

DDI

−−2µA

falling edge 2 − 2.3 V

40 − 200 mV
threshold voltage on pin DEL − 1.38 − V
voltage on pin DEL −−VDDV
charge current on pin DEL −0.5 −1 −2.5 µA
discharge current on pin DEL V
alarm pulse width C

DEL=VDD

=10nF 15 − 25 ms

DEL

0.5 −− mA

Pin SIMCLK

f

i(SIMCLK)

t

f

t

r

V

IL

V

IH

I

L

clock input frequency 0 − 20 MHz
fall time −−1µs
rise time −−1µs
LOW-level input voltage 0 − 0.3V
HIGH-level input voltage 0.7V

DDI

− V

DDI

DDI

V

+ 0.3 V

leakage current −−±3µA

DC-to-DC converter

1

V

⁄2f

VUP

osc

oscillator frequency 1 − 1.6 MHz
voltage on pin VUP 5 V card − 6.0 − V

3 V card − 4.5 − V

2000 Apr 20 14

Philips Semiconductors Product specification

I2C-bus SIM card interface

TDA8003TS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Pin SDA (open-drain)

V

IL

V

IH

I

LH

I

IL

V

OL

LOW-level input voltage −0.3 − +0.3V
HIGH-level input voltage 0.7V

DDI

− 6V
HIGH-level leakage current −−1µA
LOW-level input current depends on the pull-up resistor −−−µA
LOW-level output voltage IOL=3mA −−0.3 V

DDI

V

Pin SCL (open-drain)

V

IL

V

IH

I

LI

LOW-level input voltage −0.3 − +0.3V
HIGH-level input voltage 0.7V
input leakage current −−1µA

Pin SIMERR (100 kΩ pull-up resistor to V

V

OL

V

OH

LOW-level output voltage IOL<1mA −−0.3V
HIGH-level output voltage IOH< −1 µA 0.7V

DDI

DDI

− 6V

)

DDI

DDI

−− V

DDI

V

V

Pins SAD0, SAD1 and PWROFF

V

IL

V

IH

I

LI

LOW-level input voltage 0 − 0.3V
HIGH-level input voltage 0.7V

DDI

− V

DDI

DDI

V

+ 0.3 V

input leakage current −−±1µA

Pin RST

V

O

I

O

output voltage inactive mode; IO=1mA −0.3 − +0.4 V
output current inactive mode; pin RST short circuit

−−−1mA

to ground

V

OL

V

OH

t

f

t

r

LOW-level output voltage IOL= 200 µA −0.2 − +0.3 V
HIGH-level output voltage IOH< −200 µAV

− 0.5 − VCC+ 0.2 V

CC

fall time CL=30pF −−0.5 µs
rise time CL=30pF −−0.5 µs

Pin CLK

V

O

I

O

output voltage inactive mode; IO=1mA −0.3 − +0.4 V
output current inactive mode; pin CLK shortcircuit

−−−1mA

to ground

V

OL

V

OH

t

f

t

r

f

clk

LOW-level output voltage IOL= 200 µA −0.2 − +0.3 V
HIGH-level output voltage IOH= −200 µAV

− 0.5 − VCC+ 0.2 V

CC

fall time CL=30pF −−8ns
rise time CL=30pF −−8ns
clock frequency 1 MHz power-down configuration 1 − 1.5 MHz

regular activity 0 − 10 MHz

δ duty factor C

=30pF 45 − 55 %

L

2000 Apr 20 15

Philips Semiconductors Product specification

I2C-bus SIM card interface

TDA8003TS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Pin V

CC

V

O

output voltage inactive mode; IO=1mA −−0.4 V

active mode; 5 V card; no load 4.85 5.10 5.40 V
active mode; 3 V card; no load 2.8 3.05 3.22 V
activemode; with 200 nF capacitor;

including static load (up to 20 mA)
and dynamic current pulses;
I

= 200 mA, f

max

max

= 5 MHz;

duration <400 ns

5 V card; 40 nAs pulses 4.60 − 5.40 V
3 V card; 24 nAs pulses 2.75 − 3.22 V

I

O

output current inactive mode; pin VCCshort circuit

−−−1mA

to ground
V

=5or3V; VDD= 2.5 V −−15 mA

CC

V

=5or3V; VDD= 5.5 V −−40 mA

CC

I

 output current VCC short circuit to ground −−120 mA

CC

SR slew rate on V

(rise and fall) C

CC

= 300 nF 0.05 0.17 0.25 V/µs

L(max)

Pin I/O

V

O

I

O

output voltage inactive mode; IO=1mA −−0.4 V
output current inactive mode; pin I/O short circuit

−−−1mA

to ground

V

OL

V

OH

V

IL

V

IH

I

LIH

LOW-level output voltage IOL=1mA −0.2 − +0.4 V
HIGH-level output voltage +25 < IOH< −25 µA 0.8V

CC

− VCC+ 0.2 V
LOW-level input voltage −0.3 − +0.8 V
HIGH-level input voltage 1.5 − VCC+ 0.3 V
HIGH-level input leakage

−−10 µA

current

I

IL

t

t(DI)

t

t(DO)

t

d

R

pu(int)

LOW-level input current −−−600 µA
data input transition time CL=30pF −−1µs
data output transition time CL=30pF −−0.5 µs
delay time on falling edge −−500 ns
internal pull-up resistance

between pins I/O and V

CC

C1 version 8 − 13 kΩ
C2 version 13 − 18 kΩ

Pin SIMI/O

V
V

V
V
I

OL
OH

IL
IH

LIH

LOW-level output voltage IOL=1mA −0.2 − +0.3 V
HIGH-level output voltage with internal 20 kΩ pull-up resistor

to V

; IO=10µA

DDI

LOW-level input voltage −0.3 − +0.3V
HIGH-level input voltage 0.7V
HIGH-level input leakage

V

− 0.3 − V

DDI

DDI

− V

DDI

DDI

+ 0.2 V

DDI

+ 0.3 V

−−10 µA

V

current

2000 Apr 20 16

Philips Semiconductors Product specification

I2C-bus SIM card interface

TDA8003TS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

IL

t

t(DI)

t

t(DO)

t

d

R

pu(int)

LOW-level input current with internal 20 kΩ pull-up resistor

to V

; VI=0V

DDI

−−−100 µA

data input transition time CL=30pF −−1µs
data output transition time CL=30pF −−0.5 µs
delay time on falling edge −−500 ns
internal pull-up resistance

16 − 26 kΩ
between pins SIMI/O
and V

DDI

Pin PRES

V

IL

V

IH

I

IL

I

IH

LOW-level input voltage −0.3 − +0.3V
HIGH-level input voltage 0.7V

DD

− VDD+ 0.3 V
LOW-level input current −−5µA
HIGH-level input current −−−5µA

DD

V

Timing

t

act

t

de

activation time −−150 µs
deactivation time −−120 µs

2000 Apr 20 17

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2000 Apr 20 18

ndbook, full pagewidth

APPLICATION INFORMATION

I

2

C-bus SIM card interface

Philips Semiconductors Product specification

CARD READER

C4 C8
C3 C7
C2 C6
C1 C5
C5I
C6I
C7I
C8I

100 nF

0 Ω

1
2
3
4
5
6
7
8
9

P1-0
P1-1
P1-2
P1-3
P1-4
P1-5
P1-6
P1-7
RST
P3-0
P3-1
P3-2
P3-3
P3-4
P3-5
P3-6
P3-7
XTAL2
XTAL1

V

SS

+1.5 to +6 V

1.5 to 6 kΩ1.5 to 6 kΩ

+1.5 V

10 µF

14.74 MHz

33 pF

33
pF

TDA8003TS

1.5 V3 V

2.2
µF

100 nF

C1I
C2I

C3I
C4I

K1

(1)

K2

100 nF

3 V

PWROFF

100 nF

PGND

V

100

nF

SGND

1

S1

2
3

S3

4

DDP

5

S4

6

TDA8003TS

S2

7

VUP

8

I/O

9
10

CLK

11

V

CC

12 13

100 nF 100 nF

24
23
22
21
20
19
18
17
16
15
14

SIMCLK
SAD1
SAD0
SIMERR
SCL
SDA

V

DDI
SIMI/O
PRES
DEL

V

DDS
RST

3 V

100 nF

10
nF

+1.5 V

+1.5 V

V
P0-0

P0-1
P0-2
P0-3
P0-4
P0-5
P0-6
P0-7

PSEN

P2-7
P2-6
P2-5
P2-4
P2-3
P2-2
P2-1
P2-0

CC

EA

ALE

40
39
38
37
36
35
34
33
32
31
30
29
28

MICROCONTROLLER

27
26
25
24
23
22

10
11
12
13
14
15
16
17
18
19
2021

(1) The switch is normally closed when the card is not present.

MGR440

Fig.7 Application diagram.

Philips Semiconductors Product specification

I2C-bus SIM card interface

PACKAGE OUTLINE

SSOP24: plastic shrink small outline package; 24 leads; body width 5.3 mm

D

c

y

Z

24 13

TDA8003TS

SOT340-1

E

H

E

A

X

v M

A

pin 1 index

112

w M

b

e

DIMENSIONS (mm are the original dimensions)

mm

A

max.

2.0

0.21

0.05

1.80

1.65

0.25

b

3

p

0.38

0.25

UNIT A1A2A

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

p

cD

0.20

8.4

0.09

8.0

0 2.5 5 mm

scale

(1)E(1) (1)

eHELLpQZywv θ

5.4

0.65 1.25

5.2

7.9

7.6

Q

A

2

A

1

detail X

1.03

0.9

0.63

0.7

(A )

L

p

L

A

3

θ

0.13 0.10.2

0.8

0.4

o

8

o

0

OUTLINE

VERSION

SOT340-1 MO-150

IEC JEDEC EIAJ

REFERENCES

2000 Apr 20 19

EUROPEAN

PROJECTION

ISSUE DATE

95-02-04
99-12-27

Philips Semiconductors Product specification

I2C-bus SIM card interface

SOLDERING
Introduction to soldering surface mount packages

Thistextgivesa very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface

mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
totheprinted-circuitboardbyscreenprinting,stencillingor
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.

Wave soldering

Conventional single wave soldering is not recommended
forsurfacemount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

TDA8003TS

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• Forpackageswith leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

2000 Apr 20 20

Philips Semiconductors Product specification

I2C-bus SIM card interface

TDA8003TS

Suitability of surface mount IC packages for wave and reflow soldering methods

SOLDERING METHOD

PACKAGE

WAVE REFLOW

(1)

BGA, LFBGA, SQFP, TFBGA not suitable suitable
HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS not suitable

(3)

PLCC

, SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended
SSOP, TSSOP, VSO not recommended

(2)

(3)(4)
(5)

suitable

suitable
suitable

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

.

2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

2000 Apr 20 21

Philips Semiconductors Product specification

I2C-bus SIM card interface

DATA SHEET STATUS

DATA SHEET STATUS

Objective specification Development This data sheet contains the design target or goal specifications for

Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be

Product specification Production This data sheet contains final specifications. Philips Semiconductors

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warranty that such applicationswillbe
suitable for the specified use without further testing or
modification.

PRODUCT

STATUS

DEFINITIONS

product development. Specification may change in any manner without
notice.

published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.

reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusing or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseof any of these products, conveys no licenceortitle
under any patent, copyright, or mask work right to these
products,andmakesnorepresentationsorwarrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

(1)

TDA8003TS

2

PURCHASE OF PHILIPS I

2000 Apr 20 22

C COMPONENTS

Purchase of Philips I
components in the I2C system provided the system conforms to the I2C specification defined by
Philips. This specification can be ordered using the code 9398 393 40011.

2

C components conveys a license under the Philips’ I2C patent to use the

Philips Semiconductors Product specification

I2C-bus SIM card interface

TDA8003TS

NOTES

2000 Apr 20 23

Philips Semiconductors – a w orldwide compan y

Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone], Fax. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]

Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PT PhilipsDevelopment Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. [phone], Fax [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone], Fax [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

2000

Internet: http://www.semiconductors.philips.com

69

Printed in The Netherlands 753504/03/pp24 Date of release: 2000 Apr 20 Document order number: 9397 750 07034