Datasheet tda1519c DATASHEETS (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TDA1519C

22 W BTL or 2 × 11 W stereo power
amplifier

Product specification
Supersedes data of 1998 Oct 16
File under Integrated Circuits, IC01

2000 Mar 08

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

FEATURES

• Requires very fewexternal components for Bridge-Tied
Load (BTL)

• Stereo or BTL application

• High output power

• Low offset voltage at output (important for BTL)

• Fixed gain

• Good ripple rejection

• Mute/standby switch

• Load dump protection

• AC and DC short-circuit-safe to ground and V

• Thermally protected

• Reverse polarity safe

• Capability to handle high energy on outputs (VP=0V)

• No switch-on/switch-off plop

• Protected against electrostatic discharge

• Low thermal resistance

• Identical inputs (inverting and non-inverting)

• Pin compatible with TDA1519B (TDA1519C and

TDA1519CSP).

P

TDA1519C

GENERAL DESCRIPTION

The TDA1519C is an integrated class-B dual output
amplifier in a 9-lead plastic single in-line (SIL) power or
20-lead heatsink small outline package.

For the TDA1519CTH (SOT418-2) the heatsink is
positioned on top of the package, thereby allowing an
external heatsink to be mounted on top. The heatsink of
the TDA1519CTD (SOT397-1) is facing the PCB thereby
allowing the heatsink to be soldered on the copper area of
the PCB.

ORDERING INFORMATION

TYPE NUMBER

NAME DESCRIPTION VERSION

TDA1519C SIL9P plastic single in-line power package; 9 leads SOT131-2
TDA1519CSP SMS9P plastic surface mounted single in-line power package; 9 leads SOT354-1
TDA1519CTH HSOP20 heatsink small outline package; 20 leads; low stand-off SOT418-2
TDA1519CTD HSOP20 heatsink small outline package; 20 leads SOT397-1

PACKAGE

2000 Mar 08 2

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power

TDA1519C

amplifier

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies

V

P

I

ORM

I

q(tot)

I

stb

I

sw(on)

Inputs

 input impedance BTL 25 −−kΩ

Z

i

Stereo application

P

o

α

cs

V

n(o)(rms)

BTL application

P

o

SVRR supply voltage ripple rejection R

∆V

 DC output offset voltage −−250 mV

OO

T

j

supply voltage operating 6.0 14.4 17.5 V

non-operating −−30 V

load dump protected −−45 V
repetitive peak output current −−4A
total quiescent current − 40 80 mA
standby current − 0.1 100 µA
switch-on current −−40 µA

stereo 50 −−kΩ

output power THD = 10%

=4Ω−6−W

R

L

R

=2Ω−11 − W

L

channel separation 40 −−dB
noise output voltage (RMS value) − 150 −µV

output power THD = 10%; RL=4Ω− 22 − W

=0Ω

S

f = 100 Hz 34 −−dB
f = 1 to 10 kHz 48 −−dB

junction temperature −−150 °C

2000 Mar 08 3

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

BLOCK DIAGRAM

handbook, full pagewidth

RR

1

60
kΩ

183

Ω

standby

switch

VA

15 kΩ

× 1

3

15 kΩ

NINV

mute switch

VA

18.1 kΩ

V

P

18.1 kΩ

C

m

+
+

−

mute
reference
voltage

+

−

TDA1519C

power stage

standby
reference
voltage

mute
switch

TDA1519C

4

OUT1

8

M/SS

183

Ω

9

INV

60
kΩ

input

reference

voltage

GND1 GND2V

The pin numbers refer to the TDA1519C and TDA1519CSP.

VA

mute switch

signal
ground

2 7

Fig.1 Block diagram.

2000 Mar 08 4

power stage

6

OUT2

C

m

power
ground
(substrate)

5

P

MGL491

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

PINNING

PIN

SYMBOL

TDA1519C;

TDA1519CSP

TDA1519CTD TDA1519CTH

NINV 1 19 2 non-inverting input
GND1 2 20 1 ground 1 (signal)
RR 3 1 20 supply voltage ripple rejection
OUT1 4 3 18 output 1
GND2 5 5 16 ground 2 (substrate)
OUT2 6 8 13 output 2
V

P

7 10 11 positive supply voltage
M/SS 8 11 10 mute/standby switch input
INV 9 12 9 inverting input
n.c. − 2, 4, 6, 7, 9

and 13 to 18

3 to 8, 12, 14,
15, 17 and 19

not connected

DESCRIPTION

TDA1519C

alfpage

NINV

GND1

RR

OUT1

GND2

OUT2

V

M/SS

INV

1
2
3
4
5
6
7

P

8
9

TDA1519C

TDA1519CSP

Fig.2 Pin configuration

(SOT131-2 and 354-1).

MGR561

page

RR

n.c.

OUT1

n.c.

GND2

n.c.
n.c.

OUT2

n.c.

V

1
2
3
4
5
6
7
8
9

10

P

TDA1519CTD

Fig.3 Pin configuration

(SOT397-1).

MGL937

GND1

20
19

NINV

18

n.c.

17

n.c.

16

n.c.

15

n.c.
n.c.

14

n.c.

13

INV

12

M/SS

11

page

GND1

NINV

n.c.
n.c.
n.c.
n.c.
n.c.
n.c.
INV

M/SS

1
2
3
4
5

TDA1519CTH

6
7
8
9

10

MGL936

RR

20
19

n.c.

18

OUT1

17

n.c.

16

GND2

15

n.c.
n.c.

14

OUT2

13

n.c.

12

V

11

P

Fig.4 Pin configuration

(SOT418-2).

2000 Mar 08 5

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power

TDA1519C

amplifier

FUNCTIONAL DESCRIPTION

TheTDA1519C contains two identicalamplifiers with differential inputstages. The gain ofeach amplifier is fixedat40 dB.
A special feature of this device is the mute/standby switch which has the following features:

• Low standby current (<100 µA)

• Low mute/standby switching current (low cost supply switch)

• Mute condition.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

P

V

sc

V

rp

I

OSM

I

ORM

P

tot

T

j

T

stg

supply voltage operating − 17.5 V

non-operating − 30 V
load dump protected;

− 45 V

during 50 ms; tr≥ 2.5 ms
AC and DC short-circuit-safe voltage − 17.5 V
reverse polarity voltage − 6V
energy handling capability at outputs V

=0V − 200 mJ

P

non-repetitive peak output current − 6A
repetitive peak output current − 4A
total power dissipation see Fig.5 − 25 W
junction temperature − 150 °C
storage temperature −55 +150 °C

30

handbook, halfpage

(1)

(2)

(3)

(1) Infinite heatsink.
(2) R
(3) R

th(c-a)
th(c-a)

= 5 K/W.
= 13 K/W.

P

tot

(W)

20

10

0

−25 0 50 150

Fig.5 Power derating curve for SIL9P.

2000 Mar 08 6

100

T

amb

MGL492

(°C)

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power

TDA1519C

amplifier

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

R

th(j-c)

DC CHARACTERISTICS

VP= 14.4 V; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies

V

P

I

q(tot)

V

O

∆V

OO

Mute/standby switch

V

sw(on)

Mute condition

V

mute

V

O

∆V

OO

Standby condition

V

stb

I

stb

I

sw(on)

thermal resistance from junction to ambient in free air

TDA1519C 40 K/W
TDA1519CTH and TDA1519CTD 40 K/W

thermal resistance from junction to case

TDA1519C 3 K/W
TDA1519CTH and TDA1519CTD 3 K/W

=25°C; measurements taken using Fig.6; unless otherwise specified.

amb

supply voltage note 1 6.0 14.4 17.5 V
total quiescent current − 40 80 mA
DC output voltage note 2 − 6.95 − V

 DC output offset voltage −− 250 mV

switch-on voltage level 8.5 −−V

mute voltage 3.3 − 6.4 V
output signal in mute position VI= 1 V (max.); f = 20 Hz to 15 kHz −− 20 mV

 DC output offset voltage −− 250 mV

standby voltage standby mode 0 − 2V
standby current standby mode −− 100 µA
switch-on current − 12 40 µA

Notes

1. The circuit is DC adjusted at V

= 6 to 17.5 V and AC operating at VP= 8.5 to 17.5 V.

P

2. At VP= 17.5 to 30 V, the DC output voltage ≤0.5VP.

2000 Mar 08 7

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power

TDA1519C

amplifier

AC CHARACTERISTICS

VP= 14.4 V; RL=4Ω; f = 1 kHz; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Stereo application (see Fig.6)

P

o

output power note 1

THD total harmonic distortion P
f

ro(l)

f

ro(h)

G

v(cl)

low frequency roll-off −3 dB; note 2 − 45 − Hz
high frequency roll-off −1dB 20 −−kHz
closed-loop voltage gain 39 40 41 dB

SVRR supply voltage ripple rejection on; notes 3 and 4 40 −−dB

Z

 input impedance 50 60 75 kΩ

i

V

n(o)(rms)

α

cs

∆G

noise output voltage (RMS value) note 7

channel separation RS=10kΩ 40 −−dB

 channel unbalance − 0.1 1 dB

v(ub)

BTL application (see Fig.7)
P

o

output power note 1

output power at V

P

THD total harmonic distortion P
B

f

ro(l)

f

ro(h)

G

p

v(cl)

power bandwidth THD = 0.5%;

low frequency roll-off −1 dB; note 2 − 45 − Hz
high frequency roll-off −1dB 20 −−kHz
closed-loop voltage gain 45 46 47 dB

=25°C; unless otherwise specified.

amb

THD = 0.5% 4 5 − W
THD = 10% 5.5 6.0 − W

R

=2Ω; note 1

L

THD = 0.5% 7.5 8.5 − W
THD = 10% 10 11 − W

=1W − 0.1 − %

o

on; notes 3 and 5 45 −−dB
mute; notes 3 and 6 45 −−dB
standby;

notes 3 and 6

on; R
on; R
mute; note 8 − 120 −µV

THD = 0.5% 15 17 − W
THD = 10% 20 22 − W

= 13.2 V note 1

THD = 0.5% − 13 − W
THD = 10% − 17.5 - W

=1W − 0.1 − %

o

Po= −1 dB; with
respect to 15 W

80 −−dB

=0Ω−150 −µV

S

=10kΩ− 250 500 µV

S

− 35 to

− Hz

15000

2000 Mar 08 8

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power

TDA1519C

amplifier

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

SVRR supply voltage ripple rejection on; notes 3 and 4 34 −−dB

on; notes 3 and 5 48 −−dB
mute; notes 3 and 6 48 −−dB
standby;

notes 3 and 6

Z

 input impedance 25 30 38 kΩ

i

V

n(o)(rms)

Notes

1. Output power is measured directly at the output pins of the IC.

2. Frequency response externally fixed.

3. Ripple rejection measured at the output with a source impedance of 0 Ω (maximum ripple amplitude of 2 V).

4. Frequency f = 100 Hz.

5. Frequency between 1 and 10 kHz.

6. Frequency between 100 Hz and 10 kHz.

7. Noise voltage measured in a bandwidth of 20 Hz to 20 kHz.

8. Noise output voltage independent of RS (Vi= 0 V).

noise output voltage (RMS value) note 7

on; R
on; R
mute; note 8 − 180 −µV

=0Ω−200 −µV

S

=10kΩ− 350 700 µV

S

80 −−dB

2000 Mar 08 9

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

APPLICATION INFORMATION

handbook, full pagewidth

input

reference

voltage

−

40 dB

+

546

power

ground

220 nF

1

signal

ground

60 kΩ

2

internal

1/2 V

TDA1519C

1000

µF

standby switch

100 µF

38

P

+

40 dB

−

7

60 kΩ

9

MGL493

220 nF

TDA1519C

2200

100

nF

µF

inverting inputnon-inverting input

V

P

handbook, full pagewidth

non-inverting input

Fig.6 Stereo application diagram (SOT131-2 and SOT354-1).

38

input

220 nF

to pin 9

1

signal

ground

60 kΩ

2

reference

voltage

−

40 dB

+

546

power

ground

internal
1/2 V

TDA1519C

RL = 4 Ω

P

+

40 dB

−

standby switch

7

60 kΩ

MGL494

V

P

2200

100

nF

9

to pin 1

µF

Fig.7 BTL application diagram (SOT131-2 and SOT354-1).

2000 Mar 08 10

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

60

handbook, halfpage

I

q(tot)
(mA)

50

40

30

020

4 8 12 16

TDA1519C

MGR539

VP (V)

Fig.8 Total quiescent current (I

30

handbook, halfpage

P

o

(W)

20

10

0

020

4 8 12 16

) as a function of supply voltage (VP).

q(tot)

MGR540

THD = 10%

0.5%

VP (V)

Fig.9 Output power (Po) as a function of supply voltage (VP) for BTL application at RL= 4 Ω; f = 1 kHz.

2000 Mar 08 11

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

12

handbook, halfpage

THD

(%)

8

4

0

−1

10

11010

Po (W)

TDA1519C

MGR541

2

Fig.10 Total harmonic distortion (THD) as a function of output power (Po) for BTL application at RL=4Ω;

f = 1 kHz.

0.6

handbook, halfpage

THD

(%)

0.4

0.2

0

10 10

2

10

MGR542

3

f (Hz)

4

10

Fig.11 Total harmonic distortion (THD) as a function of operating frequency (f) for BTL application at RL=4Ω;

Po=1W.

2000 Mar 08 12

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

PACKAGE OUTLINES

SIL9P: plastic single in-line power package; 9 leads

D

d

TDA1519C

SOT131-2

non-concave

x

E

h

view B: mounting base side

B

j

D

h

A

2

E

seating plane

b

19

Z

DIMENSIONS (mm are the original dimensions)

A

UNIT A

mm

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

1

max.

2.0

OUTLINE
VERSION

SOT131-2

4.6

4.4

e

b

b

cD

max.

1.1

p2

0.75

0.48

0.60

0.38

IEC JEDEC EIAJ

b

p

(1)

24.0

23.6

REFERENCES

w M

0 5 10 mm

scale

deD

h

20.0

10 2.54

19.6

E

12.2

11.8

A

1

L

c

Q

(1)

E

h

6

3.4

3.1

Lj

Q

17.2

2.1

16.5

1.8

EUROPEAN

PROJECTION

0.25w0.03

ISSUE DATE

95-03-11
99-12-17

(1)

Z

x

2.00

1.45

2000 Mar 08 13

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

SMS9P: plastic surface mounted single in-line power package; 9 leads

D

y

non-concave

x

d

D

h

heatsink

TDA1519C

SOT354-1

A

2

E

h

91

w M

b

p

0 5 10 mm

scale

(1)

deD

E

h

12.2

10

11.8

0.75

0.60

e

(1)

24.0

0.48

0.38

23.6

20.0

19.6

Z

DIMENSIONS (mm are the original dimensions)

UNIT A A1A2A3bpcD

4.9

0.35

mm

4.2

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

0.05

4.6

4.4

0.25

j

Q

A

1

L

p

c

θ

(A3)

A

E

h

6

2.54

j

3.4

3.1

L

L

7.4

6.6

Q

p

3.4

2.1

2.8

1.9

wxy θ

E

L

heatsink

0.030.25

0.15

Z

2.00

1.45

(1)

3°
0°

OUTLINE
VERSION

SOT354-1

IEC JEDEC EIAJ

REFERENCES

2000 Mar 08 14

EUROPEAN

PROJECTION

ISSUE DATE

98-10-08
99-12-17

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

HSOP20: plastic, heatsink small outline package; 20 leads; low stand-off height

D

c

y

D

1

1

pin 1 index

10

D

2

x

E

E

2

H

E

TDA1519C

SOT418-2

A

X

v M

A

E

1

20

Z

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

Notes

1. Limits per individual lead.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

A

2

max.

3.5

3.5 0.35

3.2

e

(1)

bpc

A

A

4

3

+0.12

0.53

−0.02

0.40

0.32

0.23

D

16.0

15.8

11

w M

b

p

0 5 10 mm

scale

(2)

D

1

13.0

12.6

D

1.1

0.9

(2)

E

E

2

11.1

10.9

1

6.2

5.8

E

2.9

2.5

Q

A

2

A

4

detail X

H

L

Q

1.7

1.5

v

0.25w0.25

e

E

14.5

13.9

p

1.1

0.8

2

1.27

L

x

0.03

(A3)

p

0.07

A

θ

yZ

2.5

2.0

θ

8°
0°

OUTLINE
VERSION

SOT418-2

IEC JEDEC EIAJ

REFERENCES

2000 Mar 08 15

EUROPEAN

PROJECTION

ISSUE DATE

98-02-25
99-11-12

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

HSOP20: plastic, heatsink small outline package; 20 leads

D

y

D

1

20

11

D

2

TDA1519C

SOT397-1

E

E

2

c

H

E

A

X

v M

A

E

1

pin 1 index

1

Z

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

A

1

max.

0.3

3.6 0.35

0.1

A

3.3

3.0

e

A

0.1
0

4

bpc

0.53

0.40

0.32

0.23

A

2

3

10

w M

b

p

0 5 10 mm

scale

D

16.0

15.8

(1)

D

1

13.0

12.6

D

1.1

0.9

(1)

E

2

11.1

10.9

E

6.2

5.8

Q

A

2

A1A

4

detail X

H

L

Q

1.5

1.4

v

0.25w0.25

E

e

E

14.5

13.9

p

1.1

0.8

1

2

2.9

1.27

2.5

(A3)

L

p

0.1

A

θ

yZ

2.5

2.0

θ

8°
0°

OUTLINE
VERSION

SOT397-1

IEC JEDEC EIAJ

REFERENCES

2000 Mar 08 16

EUROPEAN

PROJECTION

ISSUE DATE

97-11-03
99-11-12

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

SOLDERING
Introduction

Thistextgives a very briefinsighttoa complex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when
through-holeandsurfacemountcomponentsare mixed on
one printed-circuit board. However, wave soldering is not
always suitable for surface mount ICs,or for printed-circuit
boards with high population densities. In these situations
reflow soldering is often used.

Through-hole mount packages

SOLDERING BY DIPPING OR BY SOLDER WAVE
The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

MANUAL SOLDERING
Apply the soldering iron (24 V or less) to the lead(s) of the

package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.

Surface mount packages

REFLOW SOLDERING
Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied
tothe printed-circuit board byscreen printing, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating,soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.

stg(max)

). If the

TDA1519C

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.

WAVE SOLDERING
Conventional single wave soldering is not recommended

forsurfacemount devices (SMDs) or printed-circuitboards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• Forpackageswith leads on four sides,thefootprintmust
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement andbefore soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

MANUAL SOLDERING
Fix the component by first soldering two

diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

2000 Mar 08 17

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power

TDA1519C

amplifier

Suitability of IC packages for wave, reflow and dipping soldering methods

MOUNTING PACKAGE

Through-hole mount DBS, DIP, HDIP, SDIP, SIL suitable
Surface mount BGA, LFBGA, SQFP, TFBGA not suitable suitable −

HBCC, HLQFP, HSQFP, HSOP, HTQFP,
HTSSOP, SMS

(4)

PLCC
LQFP, QFP, TQFP not recommended
SSOP, TSSOP, VSO not recommended

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e)equal toor larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

, SO, SOJ suitable suitable −

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

not suitable

SOLDERING METHOD

WAVE REFLOW

(2)

(3)

− suitable

suitable −

(4)(5)

suitable −

(6)

suitable −

(1)

DIPPING

.

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

2000 Mar 08 18

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

TDA1519C

NOTES

2000 Mar 08 19

Philips Semiconductors – a w orldwide compan y

Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
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Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. [phone], Fax. [phone]
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Tel. [phone], Fax [phone]

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TOKYO 108-8507, Tel. [phone], Fax. [phone]

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Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

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Tel. [phone], Fax [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
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Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

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209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
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Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

2000

Internet: http://www.semiconductors.philips.com

69

Printed in The Netherlands 753503/02/pp20 Date of release: 2000 Mar 08 Document order number: 9397 750 06633