Datasheet tda1514a DATASHEETS (Philips)

Page 1
INTEGRATED CIRCUITS
DATA SH EET
TDA1514A
50 W high performance hi-fi amplifier
Product specification File under Integrated Circuits, IC01
May 1992
Page 2
Philips Semiconductors Product specification
50 W high performance hi-fi amplifier TDA1514A

GENERAL DESCRIPTION

The TDA1514A integrated circuit is a hi-fi power amplifier for use as a building block in radio, tv and other audio applications. The high performance of the IC meets the requirements of digital sources (e.g. Compact Disc equipment).
The circuit is totally protected, the two output transistors both having thermal and SOAR protection (see Fig.3). The circuit also has a mute function that can be arranged for a period after power-on with a delay time fixed by external components.
The device is intended for symmetrical power supplies but an asymmetrical supply may also be used.

Features

• High output power
• Low harmonic distortion
• Low intermodulation distortion
• Low offset voltage
• Good ripple rejection
• Mute/stand-by facilities
• Thermal protection
• Protected against electrostatic discharge
• No switch-on or switch-off clicks
• Very low thermal resistance
• Safe Operating Area (SOAR) protection.

QUICK REFERENCE DATA

PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Supply voltage range
(pin 6 to pin 4) V
Total quiescent current V
= ± 27.5 V I
P
P
tot
± 10 −±30 V
− 56 − mA
Output power THD = −60 dB;
V
= ± 27.5 V;
P
= 8 Ω P
R
L
= ± 23 V;
V
P
R
= 4 Ω P
L
o
o
− 40 − W
− 48 − W
Closed loop voltage gain determined
externally G
c
− 30 − dB
Input resistance determined
Signal plus noise-to-noise ratio P
externally R
= 50 mW (S+N)/N − 83 − dB
o
i
− 20 − kΩ
Supply voltage ripple
rejection f = 100 Hz SVRR − 64 − dB

PACKAGE OUTLINE

9-lead SIL, plastic power (SOT131R); SOT131-2; 1996 July 19.
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Philips Semiconductors Product specification
50 W high performance hi-fi amplifier TDA1514A
Fig.1 Block diagram.
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Philips Semiconductors Product specification
50 W high performance hi-fi amplifier TDA1514A

RATINGS

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
PARAMETER SYMBOL MIN. MAX. UNIT
Supply voltage (pin 6 to pin 4) V Bootstrap voltage (pin 7 to pin 4) V Output current (repetitive peak) I Operating ambient temperature range T Storage temperature range T
P bstr
o
amb stg
−± 30 V
− 70 V
− 8A
see Fig.2
−55 + 150 °C Power dissipation see Fig.2 Thermal shut-down protection time t Mute voltage (pin 3 to pin 4) V
pr
m
− 1 hour
− 7.25 V

THERMAL RESISTANCE

From junction to mounting base R
th j-mb
1 K/W
Fig.2 Power derating curve.
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Philips Semiconductors Product specification
50 W high performance hi-fi amplifier TDA1514A
The theoretical maximum power dissipation for Po = 40 W with a stabilized power supply is:
2
V
P
---------------- ­2π2R
L
Considering, for example, a maximum ambient temperature of 50 °C and a maximum junction temperature of 150 °C the total thermal resistance is:
where V
19 W;=
= ± 27.5 V; RL=8Ω
P
R
th j-a
150 50–
---------------------­19
5.3 K/W==
Since the thermal resistance of the SOT131A encapsulation is R heatsink is R
< 4.3 K/W.
th h-a

SAFE OPERATING AREA (SOAR) PROTECTION

< 1 K/W, the thermal resistance required of the
th j-mb
Fig.3 SOAR protection curve.
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Philips Semiconductors Product specification
50 W high performance hi-fi amplifier TDA1514A

CHARACTERISTICS

= ± 27.5 V; RL= 8 Ω; f = 1 kHz; T
V
P
PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Supply voltage range
= 25 °C; test circuit as Fig.4; unless otherwise specified.
amb
(pin 6 to pin 4) V
Maximum output current
(peak value) I
Operating state
Voltage (pins 3 to 4) V Total quiescent current R
= ∞ I
L
Output power THD = −60 dB P
THD = −20 dB P
Output power V
= ± 23 V;
P
THD = −60 dB RL = 8 Ω P R
= 4 Ω P
L
Total harmonic distortion P Intermodulation distortion P
= 32 W THD −−90 −80 dB
o
= 32 W
o
note 1 d
Power bandwidth (−3 dB);
THD = −60 dB B − 20 to
P
OM max
3-4
tot
o o
o o
im
± 10 −± 30 V
6.4 −−A
6 − 7.25 V 30 56 90 mA 37 40 − W
− 51 − W
− 28 − W
− 48 − W
−−86 − dB
25 000 Hz Slew rate dV/dt − 14 − V/µs Closed loop voltage gain note 2 G Open loop voltage gain G Input impedance note 3 |Z
c o
|1−−MΩ
i
− 30 − dB
− 89 − dB
Signal-to-noise ratio note 4
P
= 50 mW S/N 80 83 − dB
o
Output offset voltage V Input bias current I Output impedance |Z
o
I
| −− 0.1 Ω
o
− 7 200 mV
− 0.1 1.0 µA
Supply voltage ripple
rejection note 5 SVRR 58 64 − dB
Quiescent current into pin 2 note 6 I
2
− 0.1 −µA
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Philips Semiconductors Product specification
50 W high performance hi-fi amplifier TDA1514A
PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Mute state
Voltage on pin 3 V Offset voltage V Output voltage V
i(rms)
= 1 V
f = 1 kHz V
3-4 o
o
2 − 4.5 V
− 30 200 V
− 450 −µV
Ripple rejection note 5 RR − 60 − dB
Standby state
Voltage on pin 3 V Total quiescent current I
3-4
tot
0 − 0.9 V
− 18 25 mA Ripple rejection notes 5 and 7 RR − 60 − dB Supply voltage to obtain
standby state ± V
P
5.0 − 7.0 V
Notes to the characteristics
1. Measured with two superimposed signals of 50 Hz and 7 kHz with an amplitude relationship of 4 : 1.
2. The closed loop gain is determined by external resistors (Fig.4, R2 and R3) and is variable between 20 and 46 dB.
3. The input impedance in the test circuit (Fig.4) is determined by the bias resistor R1.
4. The noise output voltage is measured in a bandwidth of 20 Hz to 20 kHz with a source resistance of 2 kΩ.
5. f = 100 Hz; RS= 2 kΩ; ripple voltage = 500 mV
on positive and negative supply.
(eff)
6. The quiescent current into pin 2 has an impact on the mute time.
7. Without bootstrap.
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Philips Semiconductors Product specification
50 W high performance hi-fi amplifier TDA1514A
(1) Mounting base to connected to −VP. (2) When used without a bootstrap these components are disconnected and pin 6 is connected to
pin 7 thus decreasing the output power by approximately 4 W.
(3) When R
= 4 Ω: R4 = 47 Ω and R5 = 82 Ω.
L
Fig.4 Application and test circuit.
Page 9
Philips Semiconductors Product specification
50 W high performance hi-fi amplifier TDA1514A

PACKAGE OUTLINE

SIL9P: plastic single in-line power package; 9 leads
D
d
seating plane
b

SOT131-2

non-concave
x
E
h
view B: mounting base side
A
B
j
A
1
D
h
2
E
19
Z
DIMENSIONS (mm are the original dimensions)
A
UNIT A
mm
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
1
max.
2.0
OUTLINE VERSION
SOT131-2
4.6
4.2
e
b
b
cD
max.
1.1
p2
0.75
0.48
0.60
0.38
IEC JEDEC EIAJ
b
p
(1)
24.0
23.6
REFERENCES
w M
0 5 10 mm
scale
deD
h
20.0
10 2.54
19.6
E
12.2
11.8
L
c
Q
(1)
E
h
6
3.4
3.1
Lj
Q
17.2
2.1
16.5
1.8
EUROPEAN
PROJECTION
0.25w0.03
ISSUE DATE
92-11-17 95-03-11
(1)
Z
x
2.00
1.45
Page 10
Philips Semiconductors Product specification
50 W high performance hi-fi amplifier TDA1514A
SOLDERING Introduction
There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used.
This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in
“IC Package Databook”
our
Soldering by dipping or by wave
The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds.

DEFINITIONS

(order code 9398 652 90011).
The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (T printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit.
Repairing soldered joints
Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds.
stg max
). If the
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
May 1992 10
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