Datasheet TC96C555EOA, TC96C555EPA, TC96C555CPA, TC96C555COA, TC96C555MJA Datasheet (TelCom Semiconductor)

3A OUTPUT PROGRAMMABLE POWER OSCILLATOR

1

TC96C55

FEATURES

■ Controllable Duty Cycle

■ Wide Operating Range .............................5V to 18V

■ High Peak Output Current .................................. 3A

■ High Capacitive Load Drive

Capability .................................... 1800pF in 20nsec

■ Short Delay Time ............................. < 150nsec Typ

APPLICATIONS

■ Fixed Frequency Power Oscillator

■ Voltage Controlled Oscillator

■ Low Power Buck Regulator Supply

■ MOSFET Driver

■ Simple diode inverters and doublers

ORDERING INFORMATION

Operating

Part No. Package Temp Range

TC96C555COA 8-Pin SOIC 0°C to +70°C
TC96C555CPA 8-Pin Plastic DIP 0°C to +70°C
TC96C555EOA 8-Pin SOIC – 40°C to +85°C
TC96C555EPA 8-Pin Plastic DIP – 40°C to +85°C
TC96C555MJA 8-Pin CerDIP – 55°C to +125°C

GENERAL DESCRIPTION

The TC96C555 Power Oscillator is an easily pro­grammed IC that can be used in simple switch-mode power
supplies, diode doublers and inverters, and similar circuits
where high-current pulses are needed in an economical
form.

The TC96C555 uses TelCom Semiconductors' new
Tough CMOS™ process. The output drive capability is
similar to the TC4423/4/5 MOSFET Drivers, which can
switch in 25nsec into a capacitive load of 1,800pF. The
TC96C555 will not latch up under any conditions within their
power and voltage ratings. They can accept, without dam­age, up to 1.5A of reverse current (of either polarity) being
forced back into the output. All terminals are also fully
protected against up to 4kV of electrostatic discharge. The
peak output is rated at 3A. Split outputs permits driving of an
external pair of MOSFETS, with controllable cross conduc­tion between upper and lower devices.

PIN CONFIGURATIONS (DIP and SOIC)

V

V

V

18

R2

27

V

IN

TC96C555CPA

36

REF

V

R1

TC96C555EPA

45

R2

GND

OUT
OUT
V

DD

18

V

IN

2

V

REF

36

V

R1

45

TC96C555COA
TC96C555EOA

GND

7

OUT
OUT
V

DD

2

3

4

5

FUNCTIONAL BLOCK DIAGRAM

V

REF

3

4

V

R1

V

IN

V

R2

3V

2

1

3V

I

SOURCE

I

SINK

TELCOM SEMICONDUCTOR, INC.

V

DD

+4V

2V
1V

Q

3

V

REF

1V 2V 3V

8

Q

1

7

OUTPUT A

OUTPUT B

Q

2

6

GND

5

6

7

8

TC96C555-7 10/21/96

4-159

TC96C555

3A OUTPUT PROGRAMMABLE

POWER OSCILLA TOR

ABSOLUTE MAXIMUM RATINGS

Supply Voltage ......................................................... +20V

Input Voltage, Pin 1 or 4.................V

Maximum Chip Temperature.................................+150°C

Storage Temperature Range ................– 65°C to +150°C

Package Thermal Resistance

CerDIP R
CerDIP R
PDIP R
PDIP R

................................................................ 150°C/W

ΘJ-A

...................................................................50°C/W

ΘJ-C

.................................................................... 125°C/W

ΘJ-A

.......................................................................42°C/W

ΘJ-C

+0.3 to GND –0.3

DD

SOIC R
SOIC R

Operating Temperature Range

C Version...............................................0°C to +70°C

E Version ..........................................– 40°C to +85°C

M Version .......................................– 55°C to +125°C

Package Power Dissipation (TA ≤ 70°C)

Plastic DIP ......................................................730mW

CerDIP............................................................800mW

SOIC...............................................................470mW

ELECTRICAL CHARACTERISTICS: unless otherwise specified T

.................................................................... 155°C/W

ΘJ-A

.......................................................................45°C/W

ΘJ-C

= +25°C with 5V ≤ VDD ≤ 18V.

A

Symbol Parameter Test Condition Min Typ Max Unit
Programmable Current Range

Pin 4 Input Current for I
Pin 1 Input Current for I

Control (V

SOURCE

Control (V

SINK

REF
REF

- VR1) / R

- VR2) / R

CHG

Fig. 2

DIS

Fig. 2

5.0 — 150 µA

5.0 — 150 µA

Reference Section

V

REF

V

DRIFT

TCV
V

R1, VR2

V

REF

V

ih

V

il

V

ih

I

REF

REF

- V

- V

Line Regulation of V
Load Regulation of V
V

Drift Over Lifetime — — 5 %

REF

V

Tempco

REF

Voltage at Pin 1 & 4 2.85 3.0 3.15 V

R

Voltage Across R
Pin 2, High Switching Threshold
Pin 2, Low Switching Threshold

il

Delta High to Low Threshold
V

Pin 3 Short to GND Pin 5

REF

CHG

REF

REF

and R

DIS

ELECTRICAL CHARACTERISTICS: unless otherwise specified T

VDD = 15V, I

REF

= 10µA

3.8 4 4.2 V

VDD = 7V to 18V — 0.6 1 %/V
I

= 0 to 1mA — 0.1 0.2 %/mA

REF

– 55 ≤ Temp ≤ 125°C

— 1100 2000 ppm/°C

0.85 1 1.15 V
VDD = 15V 1.8 2 2.2 V
VDD = 15V 0.8 1 1.2 V

VDD = 15V 0.9 1.0 1.1 V
VDD = 15V — 8 15 mA

= +25°C with 10V ≤ V

A

DD

≤ 18V:

Symbol Parameter Test Condition Min Typ Max Unit
Oscillator

Voltage Stability VDD = 7 to 18V – 1 5 %/V
Temperature Stability – 55 ≤ Temp ≤ 125°C – 0.4 – %/°C

Power Supply

Power Supply Current IDD0 ≤ VIN ≤ 3V – 2 3 mA

Switching Time

t

R

t

F

t

D1

t

D2

1

Rise Time C1 = 1800pF – 23 30 nsec
Fall Time C1 = 1800pF – 20 30 nsec
Delay Time C1 = 1800pF – 140 180 nsec
Delay Time C1 = 1800pF – 100 140 nsec

Output

V

OH

V

OL

R

O

R

O

I

PK

4-160

High Output Voltage

V

DD

– 0.025

–– V

Low Output Voltage – – 0.025 V
Output Res Hi State VDD = 15V – 3.5 5 Ω
Output Res Lo State V

= 15V – 2.5 5 Ω

DD

Peak Output Current VDD = 18V – 3 – A

TELCOM SEMICONDUCTOR, INC.

3A OUTPUT PROGRAMMABLE
POWER OSCILLA TOR

TC96C555

ELECTRICAL CHARACTERISTICS: specifications over operating temperature range unless otherwise

specified 5.0V < V

Symbol Parameter Test Condition Min Typ Max Unit
Programmable Current Range

Pin 4 Input Current for I
Pin 1 Input Current for I

Control (V

SOURCE

Control (V

SINK

REF-VR1
REF-VR2

Reference Section

V

REF

VDD = 7 to 18V Line Regulation of V
I

= 0 to 1mA Load Regulation of V

REF

V

DRIFT

TCV

REF

V

R1, VR2

V

REF-VR

V

ih

V

il

V

to V

ih

il

I

REF

VDD = 15V I

REF

REF

V

Drift Over Lifetime – – 5 %

REF

V

Tempco – 55 ≤ Temp ≤ 125°C – 1100 2000 ppm/°C

REF

Voltage Pin at 1 and 4 VDD = 15V 2.7 3 3.3 V
Voltage Across R
Pin 2, High Switching Threshold VDD = 15V 1.75 2 2.25 V
Pin 2, Low Switching Threshold VDD = 15V 0.75 1 1.25 V
Delta High to Low Threshold VDD = 15V 0.9 1.0 1.1 V
V

Pin 3 Short to GND Pin 5 VDD = 15V – – 18 mA

REF

CHG

and R

DIS

= 10µA 3.6 4 4.4 V

REF

Oscillator

Voltage Stability VDD = 7V to 18V – 1 8 %/V
Temperature Stability – 55 ≤ Temp ≤ 125°C – 0.4 – %/°C

Power Supply

I

DD

Switching Time

t

R

t

F

t

D1

t

D2

Power Supply Current 0 ≤ VIN ≤ 3V – – 4 mA

1

Rise Time C1 = 180pF, Fig. 1 – 33 40 nsec
Fall Time C1 = 1800pF, Fig. 1 – 30 40 nsec
Delay Time Fg. 1 – 180 220 nsec
Delay Time Fig. 1 – 160 200 nsec

Output

V

OH

V

OL

R

O

R

O

I

PK

NOTE :1Switching times guaranteed by design.

The typical values are from 125°C measurements.

Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those
listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the Operational Specifications is not implied. Any exposure to Absolute Maximum Rating
Conditions may affect device reliability.

High Output Voltage
Low Output Voltage – – 0.025 V
Output Res Hi State V
Output Res Lo State VDD = 15V – 3.4 6 Ω

Peak Output Current VDD = 18V – 2 – A

= 15V – 4.5 6 Ω

DD

DD

) / R
) / R

<18V.

Fig. 2

CHG

Fig. 2

DIS

5.0 – 100 µA

5.0 – 100 µA

– 0.9 1.5 %/V
– 0.1 0.4 %/mA

0.8 1 1.2 V

V

– 0.025

DD

–– V

1

2

3

4

5

6

7

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8

4-161

TC96C555

TYPICAL CHARACTERISTICS

3A OUTPUT PROGRAMMABLE

POWER OSCILLA TOR

Fall Time vs. Capacitive Load

VDD = 5V, 10V, 18V

500

Freq = 55KHz

Temp = 25

400

300

200

Fall Time (nsec)

100

0

100 1000 10,000

°

C

C (pF)

LOAD

Rise Time vs. Temperature

60

50

40

VDD = 5V, 10V, 15V

V

= 0 – 5V

IN

C

= 1000pF

LOAD

5V

10V

18V

20,000

Rise TIme vs. Capacitive Load

500

Freq = 55KHz

Temp = 25°C

400

300

200

Rise Time (nsec)

100

0

100 1000 10,000

VDD = 5V, 10V, 18V

C (pF)

LOAD

Fall Time vs. Temperature

60

50

40

VDD = 5V, 10V, 15V

V

= 0 – 5V

IN

C

= 1000pF

LOAD

5V

10V

18V

20,000

5V

30

Rise Tme (nsec)

10V

20

15V

10

–55 –35 5 25 45 65 85 105 125–15

Temperature (°C)

Delay Time vs. Supply Voltage

140

TD1

Temp = –55°C

120

TD2

100

80

60

Delay Time (nsec)

40

V

= 0 – 5V

20

IN

C

= 1000pF

LOAD

0

4681012

Supply Voltage

14 16 18

30

Fall Time (nsec)

5V

20

15V

10

–55 –35 5 25 45 65 85 105 125–15

10V

Temperature (°C)

Delay Time vs. Supply Voltage

Temp = 25°C

350

300
250

200

TD1

150

Delay Time (nsec)

TD2

100

V

= 0 – 5V

50

IN

C

= 1000pF

LOAD

0

4681012

Supply Voltage

14 16 18

4-162

TELCOM SEMICONDUCTOR, INC.

3A OUTPUT PROGRAMMABLE
POWER OSCILLA TOR

TYPICAL CHARACTERISTICS (Cont.)

Delay Time vs. Supply Voltage

250

200

TD2

TD1

Temp = 125

°C

250

200

Delay Time vs. Temperature

VDD = 18V

1

TC96C555

2

150

100

Delay Time (nsec)

50

V

= 0 – 5V

IN

C

= 1000pF

LOAD

0

4681012

Supply Voltage

Oscillation Frequency vs. Supply Voltage

Temp at 25°C, – 55°C, 125°C

11.9

125°C

11.7

11.5

25°C

11.3

-55°C

11.1

Frequency (kHz)

10.9

R

= 22K

10.7

DIS

R

= 44K

CHG

C = 1000pF

14 16 18

150

TD1

100

Delay Time (nsec)

Frequency (kHz)

TD2

50

V

= 0 – 5V

IN

C

= 1000pF

LOAD

0

–55 –35 5 25 45 65 85 105 125–15

Temperature (°C)

Oscillation Frequency vs. Temperature

11.9

11.7

11.5

11.3

11.1

10.9

10.7

V
R
C = 1000pF

VS = 5V, 10V, 18V

18V

= 22K

DIS

= 44K

CHG

15V

10V

3

4

5

4681012

Supply Voltage

IDD vs. Supply Voltage

Temp = – 55°C, 25°C, 125°C

3000

2500

2000

–55

°C

(µA)

1500

DD

I

1000

500

0

4681012

25

°C

125

°C

V

= 0V

IN

Supply Voltage

14 16 18

14 16 18

TELCOM SEMICONDUCTOR, INC.

–55 –35 5 25 45 65 85 105 125–15

Temperature (°C)

IDD vs. Supply Voltage

Temp = – 55°C, 25°C, 125°C

3000

2500

2000

–55°C

(µA)

1500

DD

I

1000

500

0

4681012

25

°C

125

°C

V

= 3V

IN

Supply Voltage

6

7

14 16 18

8

4-163

TC96C555

TYPICAL CHARACTERISTICS (Cont.)

3A OUTPUT PROGRAMMABLE

POWER OSCILLA TOR

2500

2000

1500

(µA)

DD

1000

I

500

0

–55 –35 5 25 45 65 85 105 125–15

4.2

4.1

4.0

REF

3.9

V

3.8

3.7

IDD vs. Temperature

VDD = 5V, 10V, 15V

15V

10V

5V

V

= 3V

IN

Temperature (°C)

V

vs. Supply Voltage

REF

Temp at 25°C, – 55°C, 125°C

-55°C

25°C

125°C

2000

1500

(µA)

1000

DD

I

500

0

–55 –35 5 25 45 65 85 105 125–15

4.1

4.0

3.9

REF

V

3.8

V

10V

5V

18V

IN

IDD vs. Temperature

VDD = 5V, 10V, 15V

15V

10V

5V

= 0V

Temperature (°C)

V

vs. Temperature

REF

VDD = 5V, 10V, 18V

4-164

4681012

Supply Voltage

R

vs. Supply Voltage

OUT

10

(Ω)

OUT

R

8

6

4

2

0

125

25

–55

V

= 0V

IN

4681012

Output HIGH

°C

°C

°C

Supply Voltage

14 16 18

14 16 18

3.7
–55 –35 5 25 45 65 85 105 125–15

Temperature (°C)

R

vs. Supply Voltage

OUT

Output LOW

7

6

125

°C

5

(Ω)

4

25

OUT

R

°C

3

–55

°C

2

1

V

= 3V

IN

0

4681012

Supply Voltage

TELCOM SEMICONDUCTOR, INC.

14 16 18

3A OUTPUT PROGRAMMABLE
POWER OSCILLA TOR

TYPICAL CHARACTERISTICS (Cont.)

R

vs. Temperature

OUT

Output HIGH

Temperature (°C)

(Ohm)

OUT

R

APPLICATIONS

10

8

6

5V

4

10V

2

18V

0

–55 –35 5 25 45 65 85 105 125–15

1

TC96C555

R

vs. Temperature

OUT

7

6

5

4

5V

(Ohm)

3

OUT

10V

R

2

18V

V

= 0V

IN

1

0

–55 –35 5 25 45 65 85 105 125–15

Output LOW

Temperature (°C)

V

= 3V

IN

2

3

The oscillator timing can easily be controlled by two
external resistors, R
and R

set the two constant current sources for charging

DIS

CHG

and R

, and capacitor C. R

DIS

CHG

and discharging C. The source current is always flowing
when in operation. When the capacitor has charged to a 2V
threshold, the current sink circuit is enabled to discharge the

VDD = 18V

TEST CIRCUIT

3

V

REF

4

≤ 10nsec

V

REF

1V 2V 3V

2V
1V

Q

3

2

1

INPUT

100KHz Square Wave

t

= t

RISE

FALL

V

REF

3

R

CHG

4

V

R

DIS

2

V

C

1

V

R2

R1

IN

4V

I

SOURCE

I

SINK

8

TC96C555

GND

5

V

1µF

WIMA
MKS-2

7

6

CERAMIC

C1 = 1800pF

Figure 1. Output Switching Time

DD

8

10µF

Q

1

7

OUTPUT

6

Q

2

GND

5

capacitor to the 1V threshold. When 1V is reached, the
current sink turns OFF to start another cycle.

Resistor R

is connected from V

CHG

at Pin 3 to V

REF

4 to program the charging current. Current is set with resistor
R

connected from V

DIS

Pin 3 to VR2 Pin 1. Both currents

REF

can range from 5µA to 150µA.

0.1µF

OUTPUT

V

IN

OUTPUT

+5V

INPUT

0V

18V

OUTPUT

0V

2V

1V

V

DD

0V

10%

90%

t

D1

t

F

10%

T

CHG

90%

t

D2

t

R

90%

10%

R1

Pin

4

5

6

7

Figure 2. Fixed Frequency Power Oscillator

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Figure 3. VIN and Output Waveform

8

4-165

TC96C555

APPLICATIONS (Cont.)

Maximum Frequency

R

= 13K, R

CHG

900
700

500

400

300

Frequency in KHz

200

100

100K

10K

100

Frequency in Hz

0.1

Figure 4. Typical Maximum and Minimum

Operating Frequency vs. Capacitor

20 60 8010

Minimum Frequency

R

CHG

1K

10

1

100pF .01µF.1µF10pF

30 50

C in pF

= 200K, R

.001µF

C in pF

= 6.8K

dis

40 100

= 100K

dis

1µF

+12V

3A OUTPUT PROGRAMMABLE

POWER OSCILLA TOR

This circuit will convert a 6 to 15V input to a 5V output of
200 milliamps. Normal operating frequency is 50kHz. Peak
to peak ripple is 50 millivolts. A change from 100mA to
200mA produces a 50mV peak change in V
ery in 200µs.

The TC96C555 is used here as a duty cycle modulator
in a buck output circuit. The source current is modulated to
control the duty cycle. Sink current is fixed at 100µA with a
resistor (R4) of 10K. Transistor Q1, (2N2907A), is used for
current modulation into TC96C555 Pin 4, the charge current
program input. Shunt regulator TL431 is used for voltage
sense and regulation feedback. The TL431 has an internal
reference of 2.495V. Terminal R is compared with this
reference to control conduction of cathode C to anode A. R2
and R3 are selected to give proper bias current to the TL431.
C2 and R7 are for loop compensation and are optimized for
a recovery time of 200µs. The TC96C555 outputs, Pin 7 and
6, are tied together so that when output is HIGH, current
conducts from VDD Pin 8 to output Pin 7 to charge the
inductor, L1. When output is OFF or LOW, energy stored in
L1 will continue to conduct through TC96C555 Pin 6 to the
lower internal MOSFET and out to Pin 5, the ground return.
This circuit does not have current limiting. A fuse is recom­mended for protection. Figure 6 shows the duty cycle as a
function of the source current. Figure 8 shows the frequency
vs control voltage.

, with recov-

OUT

4-166

L1, 3mH

TL431

C5

100µF

C

C3

100µF

C2

.1µF

100K

R7

R

A

R1

10K

Q1

2N2907A

R2

560Ω

470pF

R4

10K

C6

4.7µF

C1

C4

.1µF

8

V

4

3

1

2

DD

V

R1

V

REF

V

R2

TC96C555

V

IN

GND

7

OUT

OUT

6

5

R3, 390Ω

Figure 5. +5V Buck Regulator Power Supply with 82% Efficiency at 200mA Output

V

OUT

10K

R5

10K

R6

TELCOM SEMICONDUCTOR, INC.

3A OUTPUT PROGRAMMABLE

Voltage Controlled Oscillator

R

CHG

= 51k, R

dis

= 25.5k

Frequency in Hz

3.25V 5V
Control Voltage

1000K

100K

10K

1K

100

10

4V 7V

3.5V

0.1

µF

1000pF

100pF

10pF

0.01µF

POWER OSCILLA TOR

1

TC96C555

APPLICATIONS (Cont.)

Duty Cycle vs. Charge Current

100

Duty Cycle in %

16 38 50 1638

80

60

40

20

0

10 30 50 70 90

Figure 6. Duty Cycle vs. Charge Current

Frequency in kHz

20 40 60 80 100

Charge Current in µA

I

SINK

= 100µA

+12V

By connecting both resistors, R

CHG

and R

DIS

, to a
voltage source instead of connecting to the 4V reference of
Pin 3, one can increase or decrease the output frequency.
Increasing the voltage source to 5V will double the oscillator
frequency by doubling the voltage across both R
R

. Decreasing the voltage source to 3.5V will drop the

DIS

CHG

and

frequency in half.

2

3

4

CONTROL
VOLTAGE

SOURCE

8

V

V

V

V

V

REF

R1

IN

R2

DD

TC96C555

GND

3

R

CHG

R

DIS

Figure 7. Voltage Controlled Power Oscillator

C

4

2

1

OUT

OUT

.1µF

Figure 8. Frequency vs Control

7

6

OUTPUT

5

6

7

8

TELCOM SEMICONDUCTOR, INC.

4-167