Datasheet TC962MJA, TC962IJA, TC962EPA, TC962CPA, TC962COE Datasheet (TelCom Semiconductor)

HIGH CURRENT CHARGE PUMP DC-TO-DC CONVERTER
EVALUATION
KIT
AVAILABLE
1
TC962

FEATURES

Pin Compatible With TC7662/ICL7662/SI7661
High Output Current ....................................... 80mA
No External Diodes Required
Wide Operating Range ............................. 3V to 18V
Low Output Impedance .............................28 Typ.
No Low Voltage Terminal Required
Application Zener On Chip
OSC Frequency Doubling Pin Option for Smaller
Output Capacitors

PIN CONFIGURATIONS (DIP and SOIC)

8-Pin DIP
ZENER
CATHODE
GND
ZENER
CATHODE
NC
+
C
NC
GND
NC
C
NC

FUNCTIONAL BLOCK DIAGRAM

TELCOM SEMICONDUCTOR, INC.
C
C
16-Pin SOIC Wide
1 2 3 4 5 6 7 8
8-Pin CerDIP
1 2 3 4
TC962CPA TC962EPA
TC962IJA
TC962MJA
TC962COE
FREQ X 2
OSC/C
TIMING
ZENER
CATHODE
8
V
DD
C
7
OSC
6
FREQ x 2
V
5
OUT
16
V
DD
15
NC
14
C
OSC
13
NC
12
FREQ x 2
11
NC
10
V
OUT
9
NC
6
7
1
I
I
+ –
COMPARATOR WITH HYSTERESIS
6.4V
Q
F/F
C
Q
V
REF

GENERAL DESCRIPTION

The TC962 is an advanced version of the industry­standard 7662 high-voltage DC-to-DC converter. Using improved design techniques and CMOS construction, the TC962 can source as much as 8mA versus the 7662’s 20mA capability.
As an inverter, the TC962 can put out voltages as high as 18V and as low as 3V without the need for external diodes. The output impedance of the device is a low 28 (with the proper capacitors), voltage conversion efficiency is 99.9%, and power conversion efficiency is 97%.
The low voltage terminal (pin 6) required in some 7662 applications has been eliminated. Grounding this terminal will double the oscillator frequency from 12kHz to 24kHz. This will allow the use of smaller capacitors for the same output current and ripple, in most applications. Only two external capacitors are required for inverter applications. In the event an external clock is needed to drive the TC962 (such as paralleling), driving this pin directly will cause the internal oscillator to sync to the external clock.

ORDERING INFORMATION

Part No. Package Temp. Range
TC962COE 16-Pin SOIC Wide 0°C to +70°C TC962CPA 8-Pin Plastic DIP 0°C to +70°C TC962EPA 8-Pin Plastic DIP – 40°C to +85°C TC962IJA 8-Pin CerDIP – 25°C to +85°C TC962MJA 8-Pin CerDIP – 55°C to +125°C
TC7660EV Evaluation Kit for Charge Pump Family
8
V
DD
TC962
LEVEL
SHIFT
LEVEL
SHIFT
LEVEL
SHIFT
LEVEL
SHIFT
P SW1
N SW4
N SW2
N SW3
2
+
4
+
CAP
C
P
EXTERNAL
OUT
CAP
GND
3
+
C
R
EXT
R
L
5 V
OUT
TC962-8 9/16/96
2
3
4
5
6
7
8
4-37
TC962
HIGH CURRENT CHARGE PUMP
DC-TO-DC CONVERTER
Pin 1, which is used as a test pin on the 7662, is a voltage reference zener on the TC962. This zener (6.4V at 5 mA) has a dynamic impedance of 12 and is intended for use where the TC962 is supplying current to external regulator circuitry and a reference is needed for the regulator circuit. (See applications section.)
The TC962 is compatible with the LTC1044, SI7661, and ICL7662. It should be used in designs that require greater power and/or less input to output voltage drop. It offers superior performance over the ICL7660S.
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage (VDD to GND) .................................. +18V
Input Voltage Any Pin............... (VDD + 0.3) to (VSS – 0.3)
Current Into Any Pin.................................................10mA
ESD Protection..................................................... ±2000V
Output Short Circuit................. Continuous (at 5.5V Input)
Storage Temperature Range ................– 65°C to +150°C
Lead Temperature (Soldering, 10 sec) .................+300°C
Operating Temperature Range
CPA, COE .............................................0°C to +70°C
IJA ....................................................– 25°C to +85°C
EPA ..................................................– 40°C to +85°C
MJA ................................................– 55°C to +125°C
Package Power Dissipation (TA 70°C)
SOIC...............................................................760mW
PDIP ...............................................................730mW
CerDIP............................................................800mW
Package Thermal Resistance
CerDIP, R PDIP, R
*Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause perma­nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability.
................................................ 90°C/W
θJ-A
................................................. 140°C/W
θJ-A
ELECTRICAL CHARACTERISTICS: V
= 15V, TA = +25°C (See Test Circuit), unless otherwise indicated.
DD
Symbol Parameter Test Conditions Min Typ Max Unit
V I
R
C
P
V
V Z
DD
S
O
OSC
EFF
DEF
Z
ZT
Supply Voltage 3 18 V Supply Current RL =
V
= 15V TA = +25°C 510 700 µA
DD
= 5V TA = +25°C 190 µA
V
DD
Output Source IL = 20mA, VDD = 15V 32 37 Resistance I
Oscillator Frequency Pin 6 Open 12 kHz
Power Efficiency VDD = 15V 93 97 %
Voltage Efficiency VDD = 15V 99 99.9 %
Zener Voltage IZ = 5mA 6.0 6.2 6.4 V Zener Impedance IL = 2.5mA to 7.5mA 12
+70°C 560 µA
0 T
A
–55 T 0 T
–55 TA +125°C 210 µA
L
IL = 3mA, VDD = 5V 50
Pin 6 GND 24 kHz
RL = 2 k
R Over Temperature Range 96 %
+125°C 650 µA
A
< +70°C 210 µA
A
= 80mA, VDD = 15V 35 40
=
L
——— —
4-38
TELCOM SEMICONDUCTOR, INC.
HIGH CURRENT CHARGE PUMP DC-TO-DC CONVERTER
1
TC962
APPLICATIONS INFORMATION Theory of Operation
The TC962 is a capacitive pump (sometimes called a switched capacitor circuit), where four MOSFET switches control the charge and discharge of a capacitor.
The functional diagram (page 1) shows how the switch­ing action works. SW1 and SW2 are turned on simulta­neously, charging CP to the supply voltage, VIN. This as­sumes that the on resistance of the MOSFETs in series with the capacitor results in a charging time (3 time con­stants) that is less than the on time provided by the oscilla­tor frequency as shown:
3 (R
DS(ON) CP
In the next cycle, SW1 and SW2 are turned off and after a very short interval of all switches being off (this prevents large currents from occurring due to cross con­duction), SW3 and SW4 are turned on. The charge in CP is then transferred to CR, BUT WITH THE POLARITY IN­VERTED. In this way, a negative voltage is now derived.
Page 1 shows a functional diagram of the TC962. An oscillator supplies pulses to a flip-flop that is then fed to a set of level shifters. These level shifters then drive each set of switches at one-half the oscillator frequency.
The oscillator has two pins that control the frequency of oscillation. Pin 7 can have a capacitor added that is re­turned to ground. This will lower the frequency of the oscillator by adding capacitance to the timing capacitor internal to the TC962. Grounding pin 6 will turn on a current source and double the frequency. This will double the charge current going into the internal capacitor, as well as any capacitor added to pin 7.
A zener diode has been added to the TC962 for use as a reference in building external regulators. This zener runs from pin 1 to ground.
) <CP/(0.5 f
OSC
)
This applies to all types of capacitors, including film
types (polyester, polycarbonate, etc.).
Some applications information suggest that the capaci­tor is not critical and attribute the limiting factor of the capacitor to its reactive value. Let's examine this:
XC = and ZC = ,
where DS (duty cycle) = 50%.
Thus, ZC 2.6 at f = 12kHz, where C = 10µF.
For the TC962, f = 12,000 Hz, and a typical value of C would be 10µF. This is a reactive impedance of ' 2.6. If the ESR is as great as 5, the reactive value is not as critical as it would first appear, as the ESR would predominate. The 5 value is typical of a general-purpose electrolytic capacitor.
ESL
Figure 1. Typical Electrolytic Capacitor
1
2πf C
ESR
X
DS
C
C

Latch Up

All CMOS structures contain a parasitic SCR. Care must be taken to prevent any input from going above or below the supply rail, or latch up will occur. The result of latch up is an effective short between VDD and VSS. Unless the power supply input has a current limit, this latch-up phenomena will result in damage to the device. (See Application Note 31 for additional information.)

TEST CIRCUIT

2
3
4
5
6

Capacitors

In early charge pump converters, the capacitors were not considered critical due to the high R FET switches. In order to understand this, let’s look at a model of a typical electrolytic capacitor (Figure 1).
Note that one of its characteristics is ESR (equivalent series resistance). This parasitic resistance winds up in series with the load. Thus, both voltage conversion effi­ciency and power conversion efficiency are compromised if a low ESR capacitor is not used.
In the test circuit, for example, just changing two capaci­tors, CP and CR, from capacitors with unspecified ESR to low ESR-type output, impedance changes from 36 to 28, an improvement of 23%!
TELCOM SEMICONDUCTOR, INC.
DS(ON)
of the MOS-
NC
C
690
I
+
S
I
L
R
L
10µF
V (+5V)
V
OUT
(–5V)
7
1 2
+
10µF
3
P
TC962
4
8 7
C
OSC
5
C
R
+
8
4-39
TC962

TYPICAL APPLICATIONS

HIGH CURRENT CHARGE PUMP
DC-TO-DC CONVERTER
Combined Negative Converter and Positive Multiplier
+
V
1 2
+
10µF
C
P2
3 4
C 1
P
TC962
+
8 7
6
V = –V
OUT
5
+
10µF
V
D1
V
D2
+
C
R1
+
V =
OUT
+
2V –2V
10µF
C
D
P
Lowering Output Resistance by Paralleling Devices
+
V
8 7
6 5
V
C
R
OUT
10µF
+
+
10µF
1 2
3 4
1 2
10µF+
C
P1
3
TC962 TC962
4
8 7
C
6
P2
5
1 2
3 4
Split V In Half
10µF
+
Positive Voltage Multiplier
TC962
+
+
V 1 2
3
TC962
4
8 7
6 5
8 7
6 5
+
OUT
10µF
V 2
V =
OUT
+
2V –2 V
D
10µF
V
D2
C
P
V =
++
+
C
R
+
V
V
D1
10µF
C
P
4-40
TELCOM SEMICONDUCTOR, INC.
(V)
HIGH CURRENT CHARGE PUMP DC-TO-DC CONVERTER

TYPICAL CHARACTERISTICS

1
TC962
Supply Current vs. Temperature
700
600
500
+
400
300
200
SUPPLY CURRENT (µA)
100
0
–40 –20 0 20 40 60 80 100
–60
TEMPERATURE (°C)
V = 15V
+
V = 15V
Output Resistance vs. Temperature
80
70
60
+
V = 5V I = 3mA
50
40
30
OUTPUT RESISTANCE ( )
20
10
–60 –40 –20 0 20 40 60 80 100 120 140
L
+
V = 15V I = 20mA
TEMPERATURE (°C)
L
120 140
Oscillator Frequency vs. C
10k
1k
100
FREQUENCY (Hz)
10
10 100 1000 10,000
1
CAPACITANCE (pF)
Current vs. Zener Voltage
TA = +25°C
50
40
30
20
CURRENT (mA)
10
0
4.0
4.5
5.5 6.0 6.5 7.0
ZENER VOLTAGE (V)
EXT
TA = +25°C
Frequency vs. Temperature
20
18
16
14
12
10
FREQUENCY (kHz)
8
6
–60 –40 –20 0 20 40 60 80 100 120 140
TEMPERATURE (°C)
Power Conversion Efficiency vs. I
100
90
EFFICIENCY
80 70 60
50 40 30 20
10
POWER CONVERSION EFFICIENCY (%)
0
824405672
16
TA = +25°C
SUPPLY CURRENT
32 48 64 80
LOAD CURRENT (mA)
LOAD
150 135
120 105 90 75
60
45
SUPPLY CURRENT (mA)
30 15 0
2
3
4
5
Output Resistance vs. Input Voltage
110 100
90
80 70
3mA
60 50 40 30
OUTPUT RESISTANCE ( )
20 10
20mA
2 6 10 14 180
4 8 12 16 20
INPUT VOLTAGE
TA = +25°C
TELCOM SEMICONDUCTOR, INC.
6
7
8
4-41
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