Datasheet TBA120T Datasheet (TEMIC)

Page 1
TELEFUNKEN Semiconductors
FM IF amplifier and demodulator

Technology: Bipolar Features

Input and demodulator provided for operating with
No selection of volume-input characteristicsIndependent sound output for VTR and headphone
Case: 14 pin dual inline plastic
Additional sound inputHigh ripple rejectionHigh residual carrier suppression prevents harmonic
TBA120T
distortions

Pin Configuration

Pin Symbol Function
1 GND Ground
2, 13 Feedback
3 V 4 V 5 V
Rev . A1: 20.12.1994
i(AF) ref 5
AF input – SCART Reference voltage Volume control
Figure 1 Block diagram
Pin Symbol Function
6,7,9,10 FM demodulator filter
8 V 11 V 12 V 14 V
o(AF)1
S o(AF)2 i(IF)
AF output – controlled Supply voltage AF output – uncontrolled IF input
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TBA120T
TELEFUNKEN Semiconductors

Absolute Maximum Ratings

Reference point pin 1, unless otherwise specified
Parameters Symbol Value Unit Supply voltage Pin 11 V Volume setting voltage Pin 5 V Reference supply current Pin 4 I Power dissipation T
= 60°C P
amb
Ambient temperature range T Storage temperature range T
S 5
Ref
tot
amb
stg
18 V
6 V 5 mA
400 mW
–15 to +70 °C
–25 to +125 °C

Electrical Characteristics

T
= +25°C, VS = 12 V, f = 5.5 MHz, Figure 3, reference point pin 1, unless otherwise specified
amb
Parameters Test Conditions / Pins Symbol Min. Typ. Max. Unit Supply voltage range Pin 11 V Supply current Pin 11 I Reference voltage Pin 4 V Output resistance Pin 4 r
S
S oRef Ref
Frequency range f 0 to 12 MHz IF voltage gain Pin 6/14 G Limited IF output voltage Pin 6 – 10 V
IF
o(IF)pp
Input limiting voltage f = 50 kHz,
f
= 1 kHz Pin 14 V
mod
Input impedance Pin 14 R
AM rejection m = 30 %, f = 50 kHz,
V
= 500 V, f
i
mod
= 1 kHz
DC voltage at AF output Vi = 0 Pin 8
Pin 12
Ripple rejection Pin 11/8
Pin 11/12
k
V
o(AF)1
V
o(AF)2
k k
i(IF)
C
AM
Br Br
i i
IF residual voltage without de-emphasis
AF output voltage V
capacitor Pin 8
Pin 12
= 10 mV,
i
V
o(IF)1
V
o(IF)2
f =50 kHz, f
= 1 kHz, R
mod
Output resistance Pin 8, 12 r AF voltage amplification R AF damping R
= 20 k, Pin 8/3 G
5
= 13 k, Fig. 3 Pin 8 –G
5
Volume setting range Pin 8 V Input resistance Pin 3 r
= 20 k
5
Pin 8 Pin 12
V
o(AF)1
V
o(AF)2
o
v1
v1
o(AF)1
i
Mute function
Switching current
Pin 2 or 13
Switching voltage Figure 2 V
I
sw
mute
10 18 V
9.5 17.5 mA
4.2 4.8 5.5 V 12
68 dB
250 mV
30 60 V
800
5
pF
50 60 dB
4
5.6 35
V V
dB
30
20
mV
30
650 400
900 650
mV mV
1.1 k
7.5 dB
24 30 34 dB 70 85 dB
2 k
400 A
3 V
2
Rev . A1: 20.12.1994
Page 3
TELEFUNKEN Semiconductors
TBA120T
Figure 2
Rev . A1: 20.12.1994
Figure 3 Test circuit
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Page 4
TBA120T
Dimensions in mm
Package: JEDEC MO 001, DIP 14-leads
TELEFUNKEN Semiconductors
We reserve the right to make changes to improve technical design without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application,
the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax Number: 49 (0)7131 67 2423
4
Rev . A1: 20.12.1994
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