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TBA 229-5
Dual Sound FM IF Amplifier TBA 229-5
Bipolar IC
Features
High AM suppression over a very wide
input voltage range
High sensitivity
Very high symmetry
P-DIP-16
The component contains two separate limiter amplifiers with FM demodulators and separate
AF outputs.
Type Ordering Code Package
TBA 229-5 Q67000-A5133 P-DIP-16
Circuit Description
The component contains two separate FM sound IF sections for television stereo applications
or for multistandard receivers. Each FM section consists of an eight-stage symmetrical limiter
amplifier followed by a coincidence demodulator and an AF pre-amplifier with a low-ohmic
output. The component features considerably improved AM suppression characteristics with
small input signals, as well as a very low frequency deviation between THD
min and AMmin.
Semiconductor Group 1
01.93
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Absolute Maximum Ratings
TBA 229-5
Parameter Symbol
Limit Values
Unit
min. max.
Supply voltage VS 016V
Reference current I
IF input voltage V
DC voltages V
DC currents I
Junction temperature T
Storage temperature range T
Thermal resistance (system-air) R
REF 02mA
I IF rms 0 600 mV
9, 10, 11
V14, 15, 16
1, 2, 4, 5, 7, 8 02mA
j 150
stg – 40 125
th SA 80 K/W
0
0
V REF
VREF
V
V
˚
˚
C
C
Operating Range
Supply voltage VS 10.5 15.75 V
Ambient temperature T
Frequency f
A 070
I 0.1 12 MHz
C
˚
Semiconductor Group 2
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TBA 229-5
Characteristics
S = 12 V; TA = 25 ˚C; VI IF 14 rms = 10 mV; fI IF 11, 14 = 5.5 MHz; fmod = 1 kHz; ∆ f = ± 30 kHz
V
(if not stated otherwise)
Parameter Symbol
Unit Test ConditionLimit Values
min. typ. max.
Current consumption IS 25 35 42 mA
Input voltage for
limiter threshold V
I 11 rms
VI 14 rms
Output voltage VQ 4 rms
VQ 5 rms
DC voltage portion V
Total harmonic
Q 4 =
Q 5 =
V
THD 4,THD 5 0.4 0.8 % THD = THD min
510
510
4.8
4.866
5050100
100
600
600
700
700mVmV
6.2
6.2VV ∆ f = 0; THD = THD min
µV
µV VQ 4, 5 = – 3 dB
distortion
AM suppression
i rms =1 mV; m = 30%
V
α
AM 4
αAM 5
555560
60
dB
dB V
Cross-talk rejection
IF 1-2 = VQ 4/
C
Q 5
V
CIF 1-2 = VQ 4/
Q 5
V
60
60
dBdBfI IF 11 = 5.5 MHz; ∆ f11 = 0 kHz;
I rms=1 mV; m = 30%
I 11 rms = 4 mV; VI 14 rms =10 mV
V
I IF 11 = 5.74 MHz; ∆ f14 = 0 kHz
f
I 11 rms = 4 mV; VI 14 rms =10 mV
V
Reference voltage V 13 = 5.4 6 6.6 V
Switching voltage
muting ON (AF off)
OFF
V
V16
16
8
0
V
3
V
S
V
Design-Related Values
Input resistance R
I 1, 2
R I 7, 8
Output resistance R Q 4, 5 100
Input impedance
Z
I11, 14 800
20
20
kΩ
kΩ
Ω
Ω
IF residual voltage VQ 4, 5 (IF) 15 mV
Hum suppression αQ hum 32 dB fS = 100 Hz
∆VS rms = 500 mV; VS/VQ 4; VS/
Q 5
V
Frequency deviation
min – THDmin
AM
∆ fIF ±10 kHz
Semiconductor Group 3
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TBA 229-5
Block Diagram
Semiconductor Group 4
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Pin Functions
Pin No. Function
1, 2 Demodulator tank circuit connection IF 1
(high impedance input – slope of S-curve can be determined by external resistor
between pins 1 and 2)
3 GND
4 AF output IF 1 (emitter follower)
5 AF output IF 2 (emitter follower)
6 Supply voltage
7, 8 Demodulator tank circuit connection IF 2
(high impedance input – slope of S-curve can be determined by external resistor
between pins 1 and 2)
TBA 229-5
9 Operating point feedback of limiter amplifier and low end IF 2
(RF decoupling of IF amplifiers with appropriate capacitors is required!
10 Operating point feedback of limiter amplifier IF 2
(RF decoupling of IF amplifiers with appropriate capacitors is required!)
11 IF 2 input
(input of limiter amplifier IF 2; internal resistor between pins 9 and 11 is typ. 800
12 GND
13 Internal reference voltage (typ. 6 V)
14 IF 1 input
(input of limiter amplifier IF 2; internal resistor between pins 14 and 15 is
typ. 800
Ω)
15 Operating feedback of limiter amplifier IF 1
(RF decoupling of IF amplifiers with appropriate capacitors is required!)
16 Operating point feedback of limiter amplifier and low end IF 1
(RF decoupling of IF amplifiers with appropriate capacitors is required!)
Ω)
Semiconductor Group 5
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Diagrams
AF Output Voltage, Total Harmonic Distortion,
Circuit Voltage versus Circuit Q
B
TBA 229-5
V Q:
THD:
Measured at:
cct:
V
Measured at:
B:
Q
Measured at:
Circuit:
Q 4 rms; VQ 5 rms
V
THD 4; THD 5
fI IF = 5.5 MHz; ∆f = 30 kHz; fmod = 1 kHz; VI IF = 10 mV
1, 2 = V7, 8
V
fI IF = 5.5 MHz; ∆f = 0 kHz; VI IF = 10 mV
Q between connections 1, 2 and 7, 8
I IF = 5.5 MHz/∆fI IF for 3 dB bandwidth, ∆f = 0 kHz; VI IF = 10 mV
f
L = 10 turns 0.25 CuL; Vogt Coil Assembly 517 12 000 00 without cap
C = 1 nF STYROFLEX Capacitor
Semiconductor Group 6
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Tank Voltage versus fIF
TBA 229-5
Semiconductor Group 7
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Tank Voltage versus fIF
TBA 229-5
Semiconductor Group 8
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Total Harmonic Distortion versus Detuning (FM Operation)
4 = f (f I IF); VI= 10 mV; VS = 12 V; fmod = 1 kHz,
THD
∆f = 50 kHz, 30 kHz, 12.5 kHz
TBA 229-5
Semiconductor Group 9
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Total Harmonic Distortion versus Detuning (FM Operation)
compensated for minimum total harmonic distortion at f
THD = f (f
∆f = 50 kHz; 30 kHz; 12.5 kHz
I IF); VI = 10 mV; VS = 12 V; fmod = 1 kHz,
IF = 5.5 MHz;
TBA 229-5
Semiconductor Group 10
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TBA 229-5
Test Circuit
Semiconductor Group 11
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TBA 229-5
Application Circuit
L = 10 turns 0.2 CuL; QB approx. 25
e.g. Vogt Coil Assembly 517 12 000 00
Semiconductor Group 12
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