Datasheet TAF4453G, TAE4453G Datasheet (Siemens)

Page 1
The TAE 4453 / TAF 4453 consists of four independent, frequency-compensated op amps, each having a PNP-input differential stage and an open collector output. The integrated regulator provides for all parameters a large degree of independence of the supply voltage.
Type Ordering Code Package
TAE 4453 G Q67000-A2152 P-DSO-14-1 (SMD) TAF 4453 G Q67000-A2213 P-DSO-14-1 (SMD)
Quad PNP-Operational Amplifier
P-DSO-14-1
Features
Supply voltage range between 3 V and 36 V
Low current consumption, 1.6 mA typ.
Extremely large control range
Low output saturation voltage,
almost independent of load current
Output current up to 70 mA (100 mA max.)
Output virtually short-circuit proof
Wide common-mode range
Wide temperature range (TAF 4453 G)
Pin-compatible to LM 324
The typical characteristics of the electric
parameters correspond to those of the TAE 1453 G
Applications
Amplifier
Level converter
Driver
Offset voltage switch
Comparator
Semiconductor Group 1 01.96
TAE 4453
TAF 4453
Page 2
TAE 4453 TAF 4453
Semiconductor Group 2
Pin Configurations
(top view)
Connection Diagram
TAE 4453 G TAF 4453 G
R
L
= load resistance (collector resistance)
Page 3
TAE 4453 TAF 4453
Semiconductor Group 3
Circuit Diagram of One Op Amp
Page 4
TAE 4453 TAF 4453
Semiconductor Group 4
Absolute Maximum Ratings (TAE 4453 G) Parameter Symbol Limit Values Unit
Supply voltage V
S
± 18 V
Output current
I
Q
100 mA
Differential input voltage
V
ID
± V
S
V
Junction temperature Storage temperature range
T
j
T
stg
150 – 55 to 125
°C °C
Thermal resistance system - air TAE 4453 G
R
th SA
120 K/W
Operating Range (TAE 4453 G)
Supply voltage
V
S
± 2 to ± 18 (± 1.5 V with slightly increased offset voltage)
V
Ambient temperature
T
A
– 25 to 85 °C
Characteristics (TAE 4453 G)
V
S
= ± 5Vto±15 V; RL = 10 k, unless otherwise specified
Parameter Symbol Limit Values
T
A
= 25 °C
Limit Values
T
A
= – 25
to 85 °C
Unit
min. typ. max. min. max.
Open-loop supply current consumption, total
I
S
1.6 3.0 3.6 mA
Input offset voltage,
R
G
= 50
V
IO
– 5.5 5.5 – 7 7 mV
Input offset current Input current
I
IO
I
I
–15
40
15 150
–25 25
200
nA nA
Control range
R
L
= 2 k, VS = ± 15 V
R
L
= 620 , VS = ± 15 V
V
Q pp
V
Q pp
14.9
14.9
– 14.7 – 14.5
14.9
14.9
– 14.7 – 14.4VV
Page 5
TAE 4453 TAF 4453
Semiconductor Group 5
Input impedance, f = 1 kHz Z
I
200 k
Open-loop voltage gain
R
L
= 2 k
G
V0
80 85 80 dB
Output reverse current
I
QR
10 20 µA
Common-mode input voltage range
R
L
= 2 k
V
IC
V
S
– 0.2
+
V
S
– 1.8
V
S
+ V
S
– 2.0
V
Common-mode rejection
R
L
= 2 k
k
CMR
75 80 75 dB
Supply voltage rejection
G
V
= 100
k
SVR
25 100 100 µV/V
Temperature coefficient of
I
IO
R
G
= 50
Temperature coefficient of
V
IO
R
G
= 50
α
IIO
α
VIO
0.1 6
nA/K µV/K
Slew rate for non-inverting operation Slew rate for inverting operation
SR
SR
0.65
1.1
0.25
0.5
1.0
1.6
V/µs V/µs
Characteristics (TAE 4453 G) (cont’d)
V
S
= ± 5Vto±15 V; RL = 10 k, unless otherwise specified
Parameter Symbol Limit Values
T
A
= 25 °C
Limit Values
T
A
= – 25
to 85 °C
Unit
min. typ. max. min. max.
Page 6
TAE 4453 TAF 4453
Semiconductor Group 6
Characteristics (TAE 4453 G)
V
S
= ± 2V
Parameter Symbol Limit Values
T
A
= 25 °C
Limit Values
T
A
= – 25
to 85 °C
Unit
min. typ. max. min. max.
Input offset voltage,
R
G
= 50
V
IO
– 6 6 – 7.5 7.5 mV
Input offset current Input current
I
IO
I
I
–15
40
15 150
– 100 100
200
nA nA
Open-loop voltage gain;
R
L
= 2 k
G
V0
70 70 dB
Absolute Maximum Ratings (TAF 4453 G) Parameter Symbol Limit Values Unit
Supply voltage V
S
± 18 V
Output current
I
Q
100 mA
Differential input voltage
V
ID
± V
S
V
Junction temperature Storage temperature range
T
j
T
stg
150 – 55 to 125
°C °C
Thermal resistance system - air TAF 4453 G
R
th SA
120 K/W
Operating Range (TAF 4453 G)
Supply voltage
V
S
± 2 to ± 18 (± 1.5 V with slightly increased offset voltage)
V
Ambient temperature
T
A
– 55 to 125 °C
Page 7
TAE 4453 TAF 4453
Semiconductor Group 7
Characteristics (TAF 4453 G)
V
S
= ± 5Vto±15 V; RL = 10 k, unless otherwise specified
Parameter Symbol Limit Values
T
A
= 25 °C
Limit Values
T
A
= – 55
to 125 °C
Unit
min. typ. max. min. max.
Open-loop supply current consumption, total
I
S
1.6 3.0 3.6
mA
Input offset voltage,
R
G
= 50
V
IO
–4 4 –6 6 mV
Input offset current Input current
I
IO
I
I
–10
40
10 100
–15 15
150
nA nA
Control range
R
L
= 2 k, VS = ± 15 V
R
L
= 620 , VS = ± 15 V
V
Q pp
V
Q pp
14.9
14.9
– 14.7 – 14.5
14.8
14.8
– 14.7 – 14.4VV
Input impedance,
f = 1 kHz Z
I
200 k
Open-loop voltage gain
R
L
= 2 k
G
V0
85 87 80 dB
Output reverse current
I
QR
15µA
Common-mode input voltage range
R
L
= 2 k
V
IC
V
S
– 0.2
+
V
S
– 1.5
V
S
+ 0.2
+
V
S
– 1.8
V
Common-mode rejection,
R
L
= 2 k
k
CMR
80 85 75 dB
Supply voltage rejection,
G
V
= 100
k
SVR
25 100 100 µV/V
Page 8
TAE 4453 TAF 4453
Semiconductor Group 8
Temperature coefficient of I
IO
R
G
= 50
Temperature coefficient of
V
IO
R
G
= 50
α
IIO
α
VIO
0.1 6
0.8 25
0.8 25
nA/K µV/K
Slew rate for non-inverting operation Slew rate for inverting operation
SR
SR
0.65
1.1
0.2
0.4
0.65
1.7
V/µs V/µs
Characteristics (TAF 4453 G)
V
S
= ± 2V
Parameter Symbol Limit Values
T
A
= 25 °C
Limit Values
T
A
= – 55
to 125 °C
Unit
min. typ. max. min. max.
Input offset voltage,
R
G
= 50
V
IO
–4 4 –6 6 mV
Input offset current Input current
I
IO
I
I
–50
40
50 100
–75 75
150
nA nA
Open-loop voltage gain
R
L
= 2 k
G
V0
75 70 dB
Note: For typical performance curves, please refer to the data sheets of TAE 1453
and TAF 1453.
Characteristics (TAF 4453 G) (cont’d)
V
S
= ± 5Vto±15 V; RL = 10 k, unless otherwise specified
Parameter Symbol Limit Values
T
A
= 25 °C
Limit Values
T
A
= – 55
to 125 °C
Unit
min. typ. max. min. max.
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