Page 1
Product Description
Stanford Microdevices’ SXT-289 amplifier is a high efficiency
GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed
in low-cost surface-mountable plastic package. These HBT
MMICs are fabricated using molecular beam epitaxial growth
technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 1800-2500 MHz
cellular, ISM, WLL and Wideband CDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as
well as digital applications.
45
40
35
30
25
20
15
10
5
0
1960 MHz 2140 MHz 2450 MHz
Typical IP3, P1dB, Gain
IP3
P1dB
Gain
SXT-289
1800-2500 MHz Power Amplifier
Product Features
• Patented High Reliability GaAs HBT Technology
• High Output 3rd Order Intercept : +42 dBm typ.
at 2450 MHz
• Surface-Mountable Power Plastic Package
Applications
• PCS Systems
• WLL, Wideband CDMA Systems
• ISM Systems
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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
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Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085
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1
mBd
mBd
mBd
Bd
Bd
Bd
-
mBd
mBd
mBd
Bd
Bd
Bd
Am58501021
5.31
5.73
5.32
5.32
0.32
0.51
0.51
8.31
1:4.1
1:6.1
1:6.1
0.14
0.04
0.24
4.4
5.4
4.5
EDS-101157 Rev D
6.61
Page 2
SXT-289 1800-2500 MHz Power Amplifier
1960 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V
Note: Tuned for Output IP3
26
25
25C
-40C
85C
24
P1dB vs Frequency
dBm
23
22
21
1930 1940 1950 1960 1970 1980 1990
MHz
Input/Output Return Loss,
Isolation vs Frequency
0
-5
-10
-15
-20
dB
S22
S11
-25
-30
S12
-35
-40
1930 1940 1950 1960 1970 1980 1990
MHz
Gain vs. Frequency
20
18
25C
-40C
85C
16
dB
14
12
10
1930 1940 1950 1960 1970 1980 1990
MHz
Third Order Intercept vs. Frequency
(P
per tone = 11dBm)
42
OUT
41
40
dBm
39
38
25C
-40C
85C
37
1930 1940 1950 1960 1970 1980 1990
MHz
Third Order Intercept vs Tone Power
42
41
40
dBm
39
38
25C
-40C
85C
37
0 2 4 6 8 10121416
P
per tone (dBm)
OUT
522 Almanor Ave., Sunnyvale, CA 94085
180
160
140
120
100
80
60
40
Device Current (mA)
20
0
0.0 2.0 4.0 6.0 8.0 10.0
Phone: (800) SMI-MMIC
2
Device Current vs. Source Voltage
25C
-40C
85C
VS (V)
http://www.stanfordmicro.com
EDS-101157 Rev D
Page 3
SXT-289 1800-2500 MHz Power Amplifier
2140 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V
Note: Tuned for Output IP3
P1dB vs Frequency
26
25
24
dBm
23
22
25C
-40C
85C
21
2110 2120 2130 2140 2150 2160 2170
MHz
Input/Output Return Loss,
Isolation vs Frequency
5
0
-5
dB
-10
-15
-20
-25
-30
S22
S11
S12
-35
2110 2120 2130 2140 2150 2160 2170
MHz
Gain vs. Frequency
20
18
25C
-40C
85C
16
dB
14
12
10
2110 2120 2130 2140 2150 2160 2170
MHz
Third Order Intercept vs. Frequency
(P
per tone = 11dBm)
45
43
OUT
25C
-40C
85C
41
dBm
39
37
35
2110 2120 2130 2140 2150 2160 2170
MHz
Third Order Intercept vs Tone Power
45
43
41
dBm
39
37
35
0 2 4 6 8 10121416
P
per tone (dBm)
OUT
522 Almanor Ave., Sunnyvale, CA 94085
25C
-40C
85C
180
160
140
120
100
Device Current (mA)
Phone: (800) SMI-MMIC
3
Device Current vs. Source Voltage
25C
-40C
85C
80
60
40
20
0
0.0 2.0 4.0 6.0 8.0 10.0
VS (V)
http://www.stanfordmicro.com
EDS-101157 Rev D
Page 4
SXT-289 1800-2500 MHz Power Amplifier
2450 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V
Note: Tuned for Output IP3
26
P1dB vs Frequency
25
24
23
dBm
22
21
25C
-40C
85C
20
2400 2420 2440 2460 2480 2500
MHz
Input/Output Return Loss,
Isolation vs Frequency
5
0
-10
-15
dB
-5
S22
S11
-20
-25
-30
S12
-35
2400 2420 2440 2460 2480 2500
MHz
20
Gain vs. Frequency
25C
18
-40C
85C
16
dB
14
12
10
2400 2420 2440 2460 2480 2500
MHz
Third Order Intercept vs. Frequency
(P
per tone = 11dBm)
OUT
46
44
42
dBm
40
38
25C
-40C
85C
36
2400 2420 2440 2460 2480 2500
MHz
Third Order Intercept vs Tone Power
46
44
42
dBm
40
38
25C
-40C
85C
36
0 2 4 6 8 10 12 14 16
P
per tone (dBm)
OUT
522 Almanor Ave., Sunnyvale, CA 94085
180
160
140
120
100
80
60
Device Current (mA)
40
20
0
0.0 2.0 4.0 6.0 8.0 10.0
Phone: (800) SMI-MMIC
4
Device Current vs. Source Voltage
25C
-40C
85C
VS (V)
http://www.stanfordmicro.com
EDS-101157 Rev D
Page 5
1960 MHz Application Circuit
Note: Circuit tuned for Output IP3
Voltage Feed Resistor Bias Circuit (for > 7V supply)
Vs
Rbias
15 nH
Active Current Feedback Bias Circuit (for 5V supply)
4.3 Ω
15 nH
390
180 Ω
39pF
220 Ω
6
1.8K Ω
39pF
Ω
0.5 pF
2
0.1 µ F
(SIZE A)
0.1 µ F
(SIZE A)
(Rohm)
UMZ1N
1
0.5 pF
18pF
1000pF
15 nH
SXT-289
Z=50 Ω,13.5°
1960 MHz Schematic
Vs = 5V
22 pF
1000 pF
4
5
3
750 Ω
SXT-289
Z=50 Ω, 13.5 °
1960 MHz Schematic
Z=50 Ω,8.8°
2.7 nH
Z=50 Ω,19°
Z=50 Ω, 35.5 °
39pF
1.0 pF
39pF
1.0 pF
SXT-289 1800-2500 MHz Power Amplifier
seulaVrotsiseRsaiBdednemmoceR
ylppuS
RFin
1960 MHz Evaluation Board Layout
*Note: IP3 performance degraded due to lower
(4.5V) device voltage.
39pF 39pF
V7V8V01V21
)sV(egatloV
)smhO(saibR81727426
gnitaRrewoPW5.0W0.1W5.1W0.2
Rbias
390 Ohms
180 Ohms
15nH 15nH
1.8K Ω
1000pF
2.7nH
SXT-289
22pF
4.3
15nH
0.5pF
STANFORD MICRODEVICES
SOT-89 Eval Board
ECB-101499 Rev A
ycneuqerFzHM0691
)Bd(niaGlangiSllamS3.51
)mBd(3PItuptuO*7.93
)mBd(Bd1P8.32
0.1 uF
220 Ω
UMZ1N
1
750 Ω
0.5p
F
STANFORD MICRODEVICES
XAMP EVALUATION BOARD
ECB-101872 Rev A SOT-89
0.1uF
1000pF
18pF
Ω
1.0p
F
RFout
39pF39pF
1.0pF
NOTE: Reference Application Note AN-026 for more
information on Active Current Feedback Bias Circuit.
ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1960 MHz Evaluation Board Layout
5
http://www.stanfordmicro.com
EDS-101157 Rev D
Page 6
2140 MHz Application Circuit
Note: Circuit tuned for Output IP3
Voltage Feed Resistor Bias Circuit (for > 7V supply)
Vs
0.1 µ F
390 Ω
180 Ω
39pF
220 Ω
6
1.8K Ω
39pF
0.1 µ F
(SIZE A)
2
(Rohm)
UMZ1N
1
(SIZE A)
1000 pF
750 Ω
18pF
1000pF
15 nH
15 nH
SXT-289
2140 MHz Schematic
Active Current Feedback Bias Circuit (for 5V supply)
Vs = 5V
22 pF
4.3 Ω
4
5
3
SXT-289
Rbias
Z=50 Ω, 56.7 °
15 nH
Z=50 Ω,49.8 °
39pF
1.0 pF
39pF
1.0 pF
SXT-289 1800-2500 MHz Power Amplifier
seulaVrotsiseRsaiBdednemmoceR
ylppuS
RFin
2140 MHz Evaluation Board Layout
*Note: IP3 performance degraded due to lower
(4.5V) device voltage.
39pF 39pF
V7V8V01V21
)sV(egatloV
)smhO(saibR81727426
gnitaRrewoPW5.0W0.1W5.1W0.2
Rbias
390 Ohms
180 Ohms
15nH 15nH
SXT-289
STANFORD MICRODEVICES
SOT-89 Eval Board
ECB-101499 Rev A
ycneuqerFzHM0412
)Bd(niaGlangiSllamS0.51
)mBd(3PItuptuO*2.93
)mBd(Bd1P0.32
0.1 uF
22pF
UMZ1N
750 Ω
220 Ω
1
1000pF
Ω
1.8K
4.3
15nH
0.1uF
1000pF
18pF
Ω
1.0pF
RFout
39pF39pF
1.0p
F
2140 MHz Schematic
NOTE: Reference Application Note AN-026 for more
information on Active Current Feedback Bias Circuit.
ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
STANFORD MICRODEVICES
XAMP EVALUATION BOARD
ECB-101872 Rev A SOT-89
2140 MHz Evaluation Board Layout
6
http://www.stanfordmicro.com
EDS-101157 Rev D
Page 7
2450 MHz Application Circuit
Note: Circuit tuned for Output IP3
Voltage Feed Resistor Bias Circuit (for > 7V supply)
Vs
Rbias
0.1 µ F
(SIZE A)
390 Ω
180 Ω
1000pF
15 nH
18pF
15 nH
Z=50 Ω,56°
39pF
SXT-289 1800-2500 MHz Power Amplifier
seulaVrotsiseRsaiBdednemmoceR
ylppuS
V7V8V01V21
)sV(egatloV
)smhO(saibR81727426
gnitaRrewoPW5.0W0.1W5.1W0.2
RbiaS
390 Ohms
180 Ohms
15nH
0.1uF
1000pF
18pF
15nH
RFoutRFin
39pF39pF
39pF
220 Ω
6
1.8K Ω
39pF
0.1 µ F
(SIZE A)
2
(Rohm)
UMZ1N
1
SXT-289
2450 MHz Schematic
Active Current Feedback Bias Circuit (for 5V supply)
Vs = 5V
22 pF
1000 pF
4
5
3
750 Ω
SXT-289
2450 MHz Schematic
4.3 Ω
15 nH
Z=50 Ω, 40.9 °
1.0 pF
39pF
1.0 pF
SXT-289
STANFORD MICRODEVICES
SOT-89 Eval Board
ECB-101499 Rev A
2450 MHz Evaluation Board Layout
ycneuqerFzHM0542
)Bd(niaGlangiSllamS6.41
)mBd(3PItuptuO*7.93
)mBd(Bd1P7.32
*Note: IP3 performance degraded due to lower
(4.5V) device voltage.
0.1 uF
22pF
220 Ω
1000pF
Ω
UMZ1N
39pF 39pF
1.8K
1
750 Ω
STANFORD MICRODEVICES
XAMP EVALUATION BOARD
ECB-101872 Rev A SOT-89
4.3
15nH
1.0p
1.0pF
Ω
F
NOTE: Reference Application Note AN-026 for more
information on Active Current Feedback Bias Circuit.
ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2450 MHz Evaluation Board Layout
7
http://www.stanfordmicro.com
EDS-101157 Rev D
Page 8
Absolute Maximum Ratings
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egatloVeciveDV6
tnerruCeciveDAm002
noitapissiDrewoPWm0051
rewoPtupnIFRWm001
erutarepmeTnoitcnuJC051+
erutarepmeTgnitarepOC58+otC04-
erutarepmeTegarotSC051+otC56-
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
SXT-289 1800-2500 MHz Power Amplifier
Part Number Ordering Information
rebmuNtraPleeRrePseciveDeziSleeR
982-TXS0001"7
Part Symbolization
The part will be symbolized with a “XA2”
designator on the top surface of the package.
Pin Description
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1esaBniPesaB
2rettimE&DNG
3rotcelloCniProtcelloC
4rettimE&DNG2niPsaemaS
.elbissopsasdaeldnuorgotesolcsasaivecalP
.ecnatcudnidaelecuderotselohaivesU.dnuorgotnoitcennoC
.161±.006
.096±.006
MARKING
AREA
TOP
VIEW
PCB Pad Layout
.041±.006
.118±.003.177±.004
.059±.003
.030±.004
DOT DENOTES
PIN 1
Package Dimensions
.059±.004
.016REF
.118REF
+.003
.019
-.002
.059
+3°
5°
-4°
+.002
.015
TYP(4X)
-.001
Recommended via and mounting hole pattern
(For RF Ground and Thermal considerations)
.041REF
.038±.002
.036±.002
.008
.010
+.003
.016
-.002
.105±.002
.117±.002
.024±.004
.161 REF
.048±.002
.034
.010±.002 TYP(2X)
.068±.004
Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a
DIMENSIONS ARE IN INCHES [MM]
continuous groundplane on the backside of the board.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
8
http://www.stanfordmicro.com
EDS-101157 Rev D
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