Datasheet SXL-316-TR2, SXL-316-TR1, SXL-316-BLK Datasheet (Stanford Microdevices)

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750 800 850 900 950 1000
Product Description
Stanford Microdevices’ SXL-316 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMICs housed in low-cost surface-mountable ceramic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 800-970 MHz cellular, ISM and narrowband PCS.
Its high linearity make it an ideal choice for multi-carrier as well as digital applications.
SXL-316
800-970 MHz 50 Ohm Power Amplifier Module
Product Features
Patented High Reliability GaAs HBT
Technology
High 3rd Order Intercept : +52dBm Typ.
at 850 MHz
Surface-Mountable Power Plastic Package
Applications
Multi-Carrier Systems
Basestation Applications
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Electrical Specifications at Ta = 25C
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1998 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www .stanfordmicro.com
Output Third Order Intercept Point vs.
Frequency
MHz
dBm
SXL-224 800-970 MHz Power MMIC Amplifier
Preliminary
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Page 2
-60
-50
-40
-30
-20
-10
0
10
20
30
750 800 850 900 950 1000
-30
-25
-20
-15
-10
-5
0
750 800 850 900 950 1000
28
33
38
43
48
820 850 880 910 940 970
Gain and Isolation
vs. Frequency
Output Power and Efficiency
vs. Frequency
SXL-316 800-970 MHz Power MMIC Amplifier
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www .stanfordmicro.com
MHz
Typical Performance at 25
°°
°°
°
C (Vc = 5.0V, Ic=720mA)
2
S21
dB
S12
dB
Input & Output Return Loss
vs. Frequency
MHz
S22
dB
S11
dB
Pout dBm
Eff %
Preliminary
Page 3
Third Order Intercept Point vs. Output Tone Power
REF 24.0 dBm
#AT 20 dB
MKR -10.00 MHz
-62.05 dB
LOG 10dB/
CENTER 850.00 MHz
SPAN 50.00 MHz
T one Power= +19dBm, IP3 = +50dBm
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
3
SXL-316 800-970 MHz Power MMIC Amplifier
SXL-224 800-970 MHz Power MMIC Amplifier
Preliminary
Page 4
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www .stanfordmicro.com
4
Application Schematic and Bias Circuit
for 900 MHz Operation
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1RT-613-LXS005"31
2RT-613-LXS0001"31
KLB-613-LXSYART/001-
Part Number Ordering Information
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C52+C68+000,000,01> C06+C121+000,000,1> C58+C641+000,005
MTTF vs. Temperature
@ Id = 720mA
Thermal Resistance (Lead-Junction): 30° C/W
Absolute Maximum Ratings
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
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SXL-316 Evaluation Board
(P/N SXL-316EB)
SXL-316 800-970 MHz Power MMIC Amplifier
Preliminary
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