Page 1
40
42
44
46
48
50
750 800 850 900 950 1000
Product Description
Stanford Microdevices’ SXL-208 amplifier is a high
efficiency GaAs Heterojunction Bipolar Transistor (HBT)
MMICs housed in low-cost surface-mountable plastic
package. These HBT MMICs are fabricated using
molecular beam epitaxial growth technology which produces
reliable and consistent performance from wafer to wafer and
lot to lot.
These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 800-970 MHz
cellular, ISM and narrowband PCS.
Its high linearity make it an ideal choice for multi-carrier as
well as digital applications.
SXL-208
800-970 MHz 50 Ohm
Power MMIC Amplifier
Product Features
• Patented High Reliability GaAs HBT
Technology
• High 3rd Order Intercept : +46dBm Typ.
at 900 MHz
• High Gain : 18dB T yp. at 900 MHz
• Surface-Mountable Power Plastic Package
Applications
• Multi-Carrier Systems
• Basestation Applications
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Electrical Specifications at Ta = 25C
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Output Third Order Intercept Point
vs. Frequency
MHz
dBm
Preliminary
1
Page 2
20
25
30
35
40
45
50
820 850 880 910 940 970
-60
-50
-40
-30
-20
-10
0
10
20
30
700 750 800 850 900 950 1000
Gain and Isolation
vs. Frequency
Output Power and Efficiency
vs. Frequency
SXL-208 800-970 MHz Power MMIC Amplifier
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Pout
dBm
MHz
Typical Performance at 25
°°
°°
°
C (Vc = 5.0V , Ic=460mA)
2
Eff %
S21
dB
S12
dB
Input & Output Return Loss
vs. Frequency
MHz
-30
-25
-20
-15
-10
-5
0
700 750 800 850 900 950 1000
S22
dB
S11
dB
Preliminary
Page 3
Third Order Intercept Point vs. Output Tone Power
REF 2.0 dBm
#AT 20 dB
MKR -10.00 MHz
-62.68 dB
LOG
10dB/
CENTER 900.00 MHz
SPAN 50.00 MHz
REF 2.0 dBm
#AT 20 dB
MKR -10.00 MHz
-58.04 dB
LOG
10dB/
CENTER 900.00 MHz
SPAN 50.00 MHz
Tone Power= +14dBm, IP3 = +46dBm
Tone Power= +17dBm, IP3 = +46dBm
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
3
SXL-208 800-970 MHz Power MMIC Amplifier
PreliminaryPreliminary
Page 4
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
4
Application Schematic and Bias Circuit
for 900 MHz Operation
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1RT-802-LXS005"7
2RT-802-LXS0001"31
KLB-802-LXSYART/001-
Part Number Ordering Information
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C52+C301+000,000,01>
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MTTF vs. Temperature
@ Id = 460mA
Thermal Resistance (Lead-Junction): 60° C/W
Absolute Maximum Ratings
Notes:
1. Operation of this device above any one
of these parameters may cause permanent
damage.
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SXL-208 Evaluation Board
(P/N SXL-208EB)
SXL-224 800-970 MHz Power MMIC Amplifier
Preliminary
SXL-208 800-970 MHz Power MMIC Amplifier
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