Datasheet SXL-189-TR2, SXL-189-TR1, SXL-189-EB Datasheet (Stanford Microdevices)

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41
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43
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800 840 880 920 9601000
Product Description
Stanford Microdevices’ SXL-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 800-1000 MHz cellular bands.
Its high linearity make it an ideal choice for multi-carrier as well as digital applications.
SXL-189
800-1000 MHz 50 Ohm Power MMIC Amplifier
Product Features
Patented High Reliability GaAs HBT
Technology
High Linearity Performance : +42dBm T yp.
at 900 MHz
Surface-Mountable Plastic Package
Applications
Cellular Systems
Multi-Carrier Applications
Symbol
Parameters: Test Co ndi tions : Z0 = 50 Ohms, f = 800-1000 MHz
Units Min. Typ. Max.
P
1dB
Output Pow e r at 1dB C ompressi on f = 800 -1 000 MHz dBm 24.0
S
21
Pow er G ai n f = 800 -1 000 MHz dB 14.5
S
12
Rev er se I sol at ion f = 800 -1 000 MHz dB 30.0
VSW R Inpu t VS W R f = 800 -1 000 MHz - 2.0:1 VSW R Output VSWR f = 800 -1 000 MHz - 2.0:1
IP
3
Th ird O rd er I nt er cept Po in t f = 800 -1 000 MHz dBm 42.0
NF Noi se Fi gure f = 800 -1 000 MHz dB 5.0
I
d
Device Current Vc=+5V mA 110.0
Electrical Specifications at Ta = 25C
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1998 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Output Third Order Intercept Point
vs. Frequency
MHz
dBm
Preliminary
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-25.0
-20.0
-15.0
-10.0
-5.0
0.0
800 840 880 920 9601000
12.0
14.0
16.0
18.0
20.0
800 840 880 920 9601000
40.0
41.0
42.0
43.0
44.0
45.0
800 840 880 920 9601000
Output Third Order Intercept
vs. Frequency
SXL-189 800-1000 MHz Power MMIC Amplifier
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
MHz
T ypical Performance at 25
°°
°°
°
C (Vc = 5.0V , Ic=110mA)
2
Preliminary
Input/Output Return Loss
vs. Frequency
dBm
MHz
dB
S11
S22
dB
Power Gain vs. Frequency
MHz
Input
Output & Bias
Recommended
Land Pattern
Outline Drawing
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522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
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Preliminary
SXL-189 800-1000 MHz Power MMIC Amplifier
Typical Third Order Intercept Point Performance at 900 MHz
REF 15.0 dBm
#AT 40 dB
MKR -1.0020 MHz
-62.6 dB
LOG 10dB/
CENTER 900.00 MHz SP AN 5.00 MHz
Tone Power= +11dBm, IP3 = +42.3dBm
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100pF
3.0pF
+5VDC
33pF
100pF
1000pF1uF
680 Ohm
1.2K Ohm
33 nH
SXA-289
OUTPUT
GND
GND
R=680 Ohm
C=10 0pF
C=3.0pF
R= 1.2k Ohm L=33nH
GND
C=100pF
INPUT
33pF
1uF
1000pF
+5
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
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Part Number Devices Per Reel Reel Size
SXL-189-TR1 500 7"
SXL-189-TR2 1000 13"
SXL-189-EB Eval Board -
Part Number Ordering Information
Lead
Temperature
Junction
Temperature
MTTF (h rs)
+25C +90C >10,000,000
+60C +125C >5,000,000
+85C +150C 1,000,000
MTTF vs. Temperature
@ Id = 110mA
Thermal Resistance (Lead-Junction): 60° C/W
Absolute Maximum Ratings
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
Parameter
Ab solute
Maximum
Dev ice Volta ge 7 V Dev ice Cu rre nt 2 00mA
Power Dissipation 1500mW
RF Input Powe r 100mW
Junction Temperature +150C
Op erating Te mp era tur e -45C t o +85 C
Storage Temperature -65C to +150C
Preliminary
SXL-189 800-1000 MHz Power MMIC Amplifier
Application Schematic and Bias Circuit
for 900 MHz Operation
Board Layout and Matching Circuit
at 900 MHz
SXL-189
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