Datasheet SUD50NP04-77P Specification

New Product

SUD50NP04-77P

Vishay Siliconix

Complementary N- and P-Channel 40-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V) r

N-Channel 40

P-Channel - 40

S1 G1 S2 G

Ordering Information:

DS(on)

0.037 at V

0.046 at V

0.040 at V

0.050 at V

TO-252-4L

D-PAK

SUD50NP04-77P-T4-E3 (Lead (Pb)-free)

(Ω)

= 10 V

GS

= 4.5 V

GS

= - 10 V

GS

= - 4.5 V

GS

D

Top View
Drain Connected to
Tab

2

a

D

(A)

8

8

- 8

- 8

Qg (Typ.)

26

25.5

I

FEATURES

• TrenchFET® Power MOSFET

• 100 % UIS Tested

APPLICATIONS

• Backlight Inverter for LCD Display

• Full Bridge DC/DC Converter

D

G

1

S

1

N-Channel MOSFET

G

2

P-Channel MOSFET

RoHS

COMPLIANT

S

2

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol N-Channel P-Channel Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current (10 µs Pulse Width)

Source-Drain Current Diode Current

Pulsed Source-Drain Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T

= 25 °C

C

= 70 °C

T

C

TA = 25 °C

TA = 70 °C

= 25 °C

T

C

TA = 25 °C

L = 0.1 mH

= 25 °C

T

C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

I

SM

I

AS

E

AS

P

D

, T

T

J

stg

40 - 40

± 20

a, b, c

8

7

8

8

a

a

b, c

- 8

- 8

- 8

- 7.4

a

a

a, b, c

b, c

30 - 30

4.3

a

8

b, c

- 8

- 4.6

a

b, c

30 - 30

715

2.45 11.25 mJ

10.8 24

6.9 15.3

5.2

3.3

b, c

b, c

5.6

3.6

b, c

b, c

- 55 to 150 °C

V

A

W

THERMAL RESISTANCE RATINGS

N-Channel P-Channel

Parameter Symbol

Maximum Junction-to-Ambient

b, d

t ≤ 10 s

Maximum Junction-to-Case (Drain) Steady State

R

thJA

R

thJC

Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 s.
d. Maximum under Steady State conditions is 60 °C/W (N-Channel) and 52 °C/W (P-Channel).

Document Number: 73989
S-80109-Rev. B, 21-Jan-08

Typ. Max. Typ. Max.

20 24 18 22

9.4 11.5 4.3 5.2

Unit

°C/W

www.vishay.com

1

New Product

SUD50NP04-77P

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min.

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

a

b

b

b

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

V

DS

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

D(on)

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

VGS = 0 V, ID = 250 µA

V

= 0 V, ID = - 250 µA

GS

ID = 250 µA

J

= - 250 µA

I

D

ID = 250 µA

I

= - 250 µA

D

V

= VGS, ID = 250 µA

DS

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 40 V, V

DS

V

= - 40 V, V

DS

V

= 40 V, V

DS

V

= - 40 V, V

DS

V

V

GS

= 5 V, V

V

DS

= - 5 V, V

DS

V

= 10 V, ID = 5 A

GS

V

= - 10 V, ID = - 5 A

GS

V

= 4.5 V, ID = 4 A

GS

= - 4.5 V, ID = - 4 A

GS

= 0 V

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= 0 V, TJ = 55 °C

GS

= 10 V

GS

= - 10 V

GS

VDS = 15 V, ID = 5 A

V

= - 15 V, ID = - 5 A

DS

N-Channel

V

= 20 V, V

DS

= 0 V, f = 1 MHz

GS

P-Channel

V

= - 20 V, V

DS

VDS = 20 V, V

V

= - 20 V, V

DS

= 0 V, f = 1 MHz

GS

= 10 V, ID = 5 A

GS

= - 10 V, ID = - 5 A

GS

N-Channel

V

= 20 V, V

DS

= 4.5 V, ID = 5 A

GS

P-Channel

V

= - 20 V, V

DS

= - 4.5 V, ID = - 5 A

GS

f = 1 MHz

N-Ch 40

P-Ch - 40

N-Ch 44

P-Ch - 41

N-Ch - 5.5

P-Ch 4.3

N-Ch 1.4 2.5

P-Ch - 1.4 - 2.7

N-Ch 100

P-Ch - 100

N-Ch 1

P-Ch - 1

N-Ch 10

P-Ch - 10

N-Ch 10

P-Ch - 10

N-Ch 0.0305 0.037

P-Ch 0.030 0.040

N-Ch 0.037 0.046

P-Ch 0.036 0.050

N-Ch 22

P-Ch 20

N-Ch 640

P-Ch 1555

N-Ch 73

P-Ch 176

N-Ch 41

P-Ch 142

N-Ch 11.7 20

P-Ch 38.5 60

N-Ch 5.3 9.0

P-Ch 17 27

N-Ch 1.9

P-Ch 4.2

N-Ch 1.7

P-Ch 7.0

N-Ch 2.2

P-Ch 3.0

Typ .

a

Max. Unit

V

mV/°C

V

nA

µA

A

Ω

S

pF

nC

Ω

www.vishay.com
2

Document Number: 73989

S-80109-Rev. B, 21-Jan-08

New Product

SUD50NP04-77P

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min.

Dynamic

Tu r n - O n D el a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Tu r n - O n D el a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

a

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

I

S

a

I

SM

V

SD

t

rr

I

D

I

≅ - 5 A, V

D

≅ 5 A, V

I

D

I

≅ - 5 A, V

D

N-Channel

V

= 20 V, RL = 4 Ω

DD

≅ 5 A, V

GEN

P-Channel

V

= - 20 V, RL = 4 Ω

DD

GEN

N-Channel

V

= 20 V, RL = 4 Ω

DD

GEN

P-Channel

V

= - 20 V, RL = 4 Ω

DD

GEN

TC = 25 °C

IS = 2 A

I

S

= 10 V, Rg = 1 Ω

= - 10 V, Rg = 1 Ω

= 4.5 V, Rg = 1 Ω

= - 4.5 V, Rg = 1 Ω

= - 2 A

N-Channel

Q

rr

t

a

t

b

I

= 2 A, di/dt = 100 A/µs, TJ = 25 °C

F

P-Channel

I

= - 2 A, di/dt = - 100 A/µs, TJ = 25 °C

F

N-Ch 9 18

P-Ch 10 20

N-Ch 11 20

P-Ch 14 25

N-Ch 14 25

P-Ch 36 60

N-Ch 8 16

P-Ch 10 20

N-Ch 18 30

P-Ch 47 80

N-Ch 14 25

P-Ch 60 110

N-Ch 14 25

P-Ch 35 60

N-Ch 10 20

P-Ch 13 25

N-Ch 8

P-Ch - 8

N-Ch 30

P-Ch - 30

N-Ch 0.805 1.2

P-Ch - 0.76 - 1.2

N-Ch 19 30

P-Ch 22 40

N-Ch 14 25

P-Ch 22 40

N-Ch 13

P-Ch 15

N-Ch 6

P-Ch 7

Vishay Siliconix

a

Typ .

Max. Unit

ns

A

V

ns

nC

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

Document Number: 73989

www.vishay.com

S-80109-Rev. B, 21-Jan-08

3

New Product

0

SUD50NP04-77P

Vishay Siliconix

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

30

24

18

12

- Drain Current (A)I

D

6

0

0.0 0.5 1.0 1.5 2.0 2.5

- Drain-to-Source Voltage (V)

V

DS

VGS=10thru 5 V

Output Characteristics

0.060

0.052

0.044

VGS=4.5V

0.036

- On-Resistance (Ω)r

DS(on)

0.028

VGS=10V

4 V

3 V

5

4

3

TC= 25 °C

2

- Drain Current (A)I

D

1

0

TC= 125 °C

TC= - 55 °C

012345

VGS- Gate-to-Source Voltage (V)

Transfer Characteristics

800

C

iss

640

480

320

C

C - Capacitance (pF)

160

oss

0.020

10

8

6

4

- Gate-to-Source Voltage (V)

2

GS

V

0

0.0 2.5 5.0 7.5 10.0 12.5

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4

0 6 12 18 24 30

ID- Drain Current (A)

On-Resistance vs. Drain Current

ID=5A

VDS=20V

Qg- Total Gate Charge (nC)

VDS=10V

VDS=30V

Gate Charge

C

rss

0

0 6 12 18 24 30

VDS- Drain-to-Source Voltage (V)

Capacitance

1.8

ID=5A

1.6

1.4

1.2

- On-Resistance
(Normalized)

1.0

DS(on)

r

0.8

0.6

- 50 - 25 0 25 50 75 100 125 15

TJ- Junction Temperature (°C)

VGS=10V

On-Resistance vs. Junction Temperature

Document Number: 73989

S-80109-Rev. B, 21-Jan-08

VGS=4.5V

New Product

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SUD50NP04-77P

Vishay Siliconix

- On-Resistance (Ω)r

DS(on)

0.20

ID=5A

0.16

0.12

0.08

TA= 125 °C

0.04

TA= 25 °C

0

02468 10

VGS- Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

100

80

60

Power (W)

40

100

TJ= 150 °C

10

1

0.1

- Source Current (A)I

S

0.01

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD- Source-to-Drain Voltage (V)

TJ= 25 °C

Source-Drain Diode Forward Voltage

0.4

0.2

ID=5mA

0.0

- 0.2

Variance (V)V

GS(th)

- 0.4

ID= 250 µA

- 0.6

- 0.8

- 50 - 25 0 25 50 75 100 125 150

TJ- Temperature (°C)

Threshold Voltage

100

80

60

Power (W)

40

20

0

0.01

Time (s)

Single Pulse Power, Junction-to-Case

20

0

0.0001 0.001 0.01 0.1 1 10

Time (s)

Single Pulse Power, Junction-to-Ambient

100

Limited byr

10

1

- Drain Current (A)I

D

0.1

0.01

10.10100.0 0.001

0.01

> minimum VGSat which r

* V

GS

*

DS(on)

TA= 25 °C

Single Pulse

0.1 1 10

- Drain-to-Source Voltage (V)

V

DS

DS(on)

is specified

100 µs

1ms

10 ms
100 ms

10 s

DC

100

Safe Operating Area, Junction-to-Ambient

Document Number: 73989
S-80109-Rev. B, 21-Jan-08

www.vishay.com

5

New Product

SUD50NP04-77P

Vishay Siliconix

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

- Drain Current (A)

D

I

0.1

0.01

15

12

9

Limited byr

1

0.01

* V

> minimum VGSat which r

GS

*

DS(on)

TC= 25 °C

Single Pulse

0.1 1 10

V

- Drain-to-Source Voltage (V)

DS

DS(on)

Safe Operating Area, Junction-to-Case

Package Limited

is specified

100 µs

1ms
10 ms

100 ms, DC

100

7

5

4

3

- Drain Current (A)

D

I

1

0

0 25 50 75 100 125 150

TA- Ambient Temperature (°C)

Current Derating**, Junction-to-Ambient

2.5

2.0

1.5

6

- Drain Current (A)

D

I

3

0

0 25 50 75 100 125 150

TC- Case Temperature (°C)

Current Derating**, Junction-to-Case

15

12

9

Power (W)

6

3

0

0 25 50 75 100 125 150

TC- Case Temperature (°C)

Power Derating, Junction-to-Case

Power (W)

1.0

0.5

0.0
0 25 50 75 100 125 150

TA- Ambient Temperature (°C)

Power Derating, Junction-to-Ambient

** The power dissipation PD is based on T

= 150 °C, using

J(max)

junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.

www.vishay.com
6

Document Number: 73989

S-80109-Rev. B, 21-Jan-08

New Product

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1

Duty Cycle = 0.5

0.2

SUD50NP04-77P

Vishay Siliconix

Thermal Impedance

Normalized Effective Transient

Thermal Impedance

Normalized Effective Transient

0.1

0.01

10

1

0.1

0.1

0.05

0.02

Single Pulse

-4

Duty Cycle = 0.5

0.2

0.1

0.02

Single Pulse

0.05

-3

10

-2

10

-1

1

Square WavePulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Notes:

P

DM

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

JM-TA=PDMZthJA

4. Surface Mounted

10

t

1

t

2

t

1

t

2

= 60 °C/W

thJA

(t)

100

100010

0.01

-4

10

Document Number: 73989
S-80109-Rev. B, 21-Jan-08

-3

10

-2

10

-1

Square WavePulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

01110

www.vishay.com

7

New Product

SUD50NP04-77P

Vishay Siliconix

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

30

VGS=10thru 4 V

24

18

12

- Drain Current (A)I

D

6

0

0.0 0.5 1.0 1.5 2.0 2.5

VDS- Drain-to-Source Voltage (V)

Output Characteristics

0.050

0.044

0.038

VGS=4.5V

3 V

5

4

3

TJ= 25 °C

2

- Drain Current (A)I

D

1

0

0.0 0.8 1.6 2.4 3.2 4.0

TJ= 125 °C

VGS- Gate-to-Source Voltage (V)

Transfer Characteristics

2500

2000

C

iss

1500

TJ= - 55 °C

0.032

- On-Resistance (Ω)r

DS(on)

0.026

0.020

VGS=10V

0 6 12 18 24 30

ID- Drain Current (A)

On-Resistance vs. Drain Current

10

ID=5A

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0 8 16 24 32 40

VDS=20V

Qg- Total Gate Charge (nC)

VDS=10V

VDS=30V

Gate Charge

1000

C - Capacitance (pF)

- On-Resistance
(Normalized)

DS(on)

r

C

500

C

rss

0

0 6 12 18 24 30

1.8

ID=5A

1.6

1.4

1.2

1.0

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

On-Resistance vs. Junction Temperature

oss

VDS- Drain-to-Source Voltage (V)

Capacitance

VGS=10V

VGS=4.5V

TJ- Junction Temperature (°C)

www.vishay.com
8

Document Number: 73989

S-80109-Rev. B, 21-Jan-08

New Product

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SUD50NP04-77P

Vishay Siliconix

- On-Resistance (Ω)r

DS(on)

0.12

0.09

0.06

TA= 125 °C

0.03

0

02468 10

VGS- Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

120

96

72

Power (W)

48

ID=5A

TA= 25 °C

100

10

- Source Current (A)I

S

1

0.0 0.3 0.6 0.9 1.2 1.5

TJ= 150 °C

- Source-to-Drain Voltage (V)

V

SD

TJ= 25 °C

Source-Drain Diode Forward Voltage

0.7

0.5

0.3

Variance (V)V

0.1

GS(th)

ID= 250 µA

ID=5mA

- 0.1

- 0.3

- 50 - 25 0 25 50 75 100 125 150

TJ- Temperature (°C)

Threshold Voltage

120

96

72

Power (W)

48

24

0

0.1

Time (s)

Single Pulse Power, Junction-to-Case

24

0

0.001 0.01 0.1 1 10 100

Time (s)

Single Pulse Power, Junction-to-Ambient

100

Limited byr

10

1

- Drain Current (A)I

D

0.1

0.01

011100.00.01

0.01

> minimum VGSat which r

* V

GS

*

DS(on)

TA= 25 °C

Single Pulse

0.1 1 10

V

- Drain-to-Source Voltage (V)

DS

DS(on)

1ms
10 ms
100 ms

1s

10 s

DC

100

is specified

Safe Operating Area, Junction-to-Ambient

Document Number: 73989
S-80109-Rev. B, 21-Jan-08

www.vishay.com

9

New Product

SUD50NP04-77P

Vishay Siliconix

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

- Drain Current (A)

D

I

0.1

0.01

22

18

13

Limited byr

1

0.01

* V

GS

*

DS(on)

TC= 25 °C

Single Pulse

0.1 1 10

V

- Drain-to-Source Voltage (V)

DS

> minimum VGSat which r

DS(on)

Safe Operating Area, Junction-to-Case

is specified

100 µs

1ms

10 ms
100 ms

DC

100

7

6

4

3

- Drain Current (A)

D

I

1

0

0 25 50 75 100 125 150

TA- Ambient Temperature (°C)

Current Derating**, Junction-to-Ambient

3.5

2.8

2.1

Package Limited

9

- Drain Current (A)

D

I

4

0

0 25 50 75 100 125 150

TC- Case Temperature (°C)

Current Derating**, Junction-to-Case

35

28

21

Power (W)

14

7

0

0 25 50 75 100 125 150 175

TC- Case Temperature (°C)

Power Derating, Junction-to-Case

Power (W)

1.4

0.7

0

0 25 50 75 100 125 150 175

TA- Ambient Temperature (°C)

Power Derating, Junction-to-Ambient

** The power dissipation PD is based on T

= 150 °C, using

J(max)

junction-to-case thermal resistance, and is more useful in settling the

upper dissipation limit for cases where additional heatsinking is

used. It is used to determine the current rating, when this rating falls

below the package limit.

www.vishay.com
10

Document Number: 73989

S-80109-Rev. B, 21-Jan-08

New Product

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1

Duty Cycle = 0.5

SUD50NP04-77P

Vishay Siliconix

Thermal Impedance

Normalized Effective Transient

Thermal Impedance

Normalized Effective Transient

0.1

0.01

10

1

0.1

0.2

0.1

0.05

0.02

-4

Duty Cycle = 0.5

0.2

0.1

0.02

Single Pulse

Single Pulse

-3

10

0.05

Notes:

P

DM

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

JM-TA=PDMZthJA

4. Surface Mounted

-2

10

-1

1

10

Square WavePulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

t

1

t

2

t

1

t

2

= 52 °C/W

thJA

(t)

100

100010

0.01

-4

10

-3

10

-2

10

-1

01110

Square WavePulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73989.

Document Number: 73989
S-80109-Rev. B, 21-Jan-08

www.vishay.com

11

TO252-4L CASE OUTLINE

A 0.254 C A B

E2

Package Information

Vishay Siliconix

E

A

C

C

C1

D1

L

F

G

E1

B2 B1

e (X4)

0.254 C A B

B

θ

B

L1

DETAIL “A”

b1(X4)

b(X5)

H

1, 18

L3

B

D

L2

C

SEATING
PLANE

A1

DETAIL “A”

c3

SECTION B-B

(b)

H

c2

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 2.22 2.38 0.087 0.094 E 6.40 6.60 0.252 0.260

A1 0.95 1.05 0.037 0.041 E1 4.90 5.00 0.193 0.197

B1 3.35 BSE 0.132 BSE E2 5.23 5.43 0.206 0.214

B2 1.74 BSE 0.069 BSE F 0.77 BSC 0.030 BSC

b 0.64 0.79 0.025 0.031 G 2.65 BSC 0.104 BSC

b1 0.8 0.86 0.031 0.034 H 9.60 10.20 0.378 0.402

C 0.49 0.53 0.019 0.021 L 1.1 REF 0.043 REF

C1 0.508 REF 0.020 REF L1 1.4 1.65 0.055 0.065

C2 0.495 0.53 0.0195 0.0209 L2 0.65 0.95 0.026 0.037

C3 0.509 0.564 0.020 0.0222 L3 0.01 0.127 0.0004 0.0050

D 6.00 6.20 0.236 0.244 e 1.27 BSC 0.050 BSC

D1 5.415 5.515 0.213 0.217 θ 0° 8°0°8°

ECN: T09-0309-Rev. C, 11-May-09
DWG: 5956

Document Number: 74439 www.vishay.com
11-May-09 1

Application Note 826

Vishay Siliconix

RECOMMENDED PAD FOR DPAK 4L

8.600

(0.339)

5.430

(0.214)

5.715

(0.225)

5.100

(0.034)

(0.201)

0.860

2.715

(0.107)

2.970

(0.117)

(0, 0)

0.615

(0.024)

1.700

(0.067)

1.270

(0.050)

12.200

(0.480)

Recommended Minimum PADs for TO-252-4L (DPAK)

Return to Index

APPLICATION NOTE

Dimensions in mm/(Inches)

Keep-out 8.6 (0.339) x 12.2 (0.480)

www.vishay.com Document Number: 69047
4 Revision: 04-Nov-08

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www.vishay.com

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Revision: 02-Oct-12

1

Document Number: 91000