Datasheet SUD25N15-52 Specification

N-Channel 150-V (D-S) 175 °C MOSFET

SUD25N15-52

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

150

DS(on)

0.052 at V

0.060 at V

GS

(Ω)I

= 10 V

= 6 V

GS

D

(A)

25

23

FEATURES

• TrenchFET® Power MOSFET

• 175 °C Junction Temperature

• PWM Optimized

• 100 % R

Tested

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

TO-252

Drain Connected to Tab

SGD

Top View

Ordering Information:

SUD25N15-52-E3 (Lead (Pb)- free)

• Primary Side Switch

D

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 175 °C)

J

b

TC = 25 °C

T

= 125 °C

C

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Avalanche Current

Repetitive Avalanche Energy (Duty Cycle ≤ 1 %) L = 0.1 mH

= 25 °C

T

Maximum Power Dissipation

C

= 25 °C

T

A

Operating Junction and Storage Temperature Range

V

DS

V

GS

I

D

I

DM

I

S

I

AR

E

AR

P

D

, T

T

J

stg

150

± 20

25

14.5

50

25

25

31 mJ

b

136

3

a

W

- 55 to 175 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Junction-to-Ambient

a

Junction-to-Case (Drain)

Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.

Document Number: 71768
S09-1501-Rev. D, 10-Aug-09

t ≤ 10 s

Steady State

R

thJA

R

thJC

15 18

40 50

0.85 1.1

°C/W

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SUD25N15-52

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ.a Max. Unit

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

b

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

a

b

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

c

c

c

Gate Resistance

Tur n -O n De l ay Ti m e

Rise Time

c

Turn-Off Delay Time

Fall Time

c

c

c

b

V

DS

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Qgd

R

g

t

d(on)

t

r

t

d(off)

t

f

Source-Drain Diode Ratings and Characteristics TC = 25 °C

Pulsed Current

Diode Forward Voltage

b

Source-Drain Reverse Recovery Time

I

SM

V

SD

t

rr

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.

VGS = 0 V, ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 150 V, V

DS

V

= 150 V, V

DS

V

= 150 V, V

DS

DS

V

V

= 10 V, ID = 5 A, TJ = 125 °C

GS

V

= 10 V, ID = 5 A, TJ = 175 °C

GS

V

= 0 V, TJ = 125 °C

GS

= 0 V, TJ = 175 °C

GS

= 5 V, V

GS

= 10 V, ID = 5 A

GS

= 6 V, ID = 5 A

GS

VDS = 15 V, ID = 25 A

VGS = 0 V, V

VDS = 75 V, V

V

≅ 25 A, V

I

D

IF = 25 A, V

= 25 V, f = 1 MHz

DS

= 10 V, ID = 25 A

GS

= 50 V, RL = 3 Ω

DD

= 10 V, Rg = 2.5 Ω

GEN

GS

IF = 25 A, dI/dt = 100 A/µs

= 0 V

GS

= 10 V

= 0 V

150

24

V

± 100 nA

1

50

µA

250

50 A

0.042 0.052

0.109

0.145

Ω

0.047 0.060

40 S

1725

216

pFOutput Capacitance

100

33 40

9

nC

12

13Ω

15 25

70 100

25 40

ns

60 90

50 A

0.9 1.5 V

95 140 ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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Document Number: 71768

S09-1501-Rev. D, 10-Aug-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SUD25N15-52

Vishay Siliconix

50

VGS = 10 V thru 7 V

40

30

20

- Drain Current (A)I

D

10

0

0246810

VDS - Drain-to-Source Voltage (V)

Output Characteristics

60

50

TC = - 55 °C

40

30

Transconductance (S)g

20

­fs

10

6 V

5 V

4 V

25 °C

125 °C

- D r a i n C urrent (A)I

D

- On-Resistance (Ω)

DS(on)

R

50

40

30

20

10

0

01234567

VGS- Gate-to-Source Voltage (V)

TC = 125 °C

25 °C

-55 °C

Transfer Characteristics

0.10

0.08

0.06

0.04

0.02

VGS = 6 V

VGS = 10 V

0

0 1020304050

2500

2000

1500

1000

C - Capacitance (pF)

500

0

C

rss

0 30 60 90 120 150

VDS - Drain-to-Source Voltage (V)

Document Number: 71768
S09-1501-Rev. D, 10-Aug-09

- Drain Current (A)

I

D

Transconductance

C

iss

C

oss

Capacitance

0.00

- Gate-to-Source Voltage (V)

GS

V

0 1020304050

I

- Drain Current (A)

D

On-Resistance vs. Drain Current

20

VDS = 75 V

16

I

= 25 A

D

12

8

4

0

0 102030405060

Qg - Total Gate Charge (nC)

Gate Charge

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SUD25N15-52

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

3.0

VGS= 10 V

I

= 5 A

D

2.5

2.0

1.5

- On-Resistance
(Normalized)

DS(on)

R

1.0

0.5

- S o urce Current (A)I

100

TJ= 150 °C

10

S

TJ= 25 °C

0.0

- 50 - 25 0 25 50 75 100 125 150 175

TJ- J unction Temperature ( )°C

On-Resistance vs. Junction Temperature

THERMAL RATINGS

30

25

20

15

- Drain Current (A)
10

D

I

5

0

0 25 50 75 100 125 150 175

2

1

Duty Cycle = 0.5

TC- Case Temperature (°C)

Maximum Avalanche Drain Current

vs. Case Temperature

1

0

0.3 0.6 0.9 1.2

VSD- S o urce-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

100

100

DS(on)

10 µs

100 µs

1 ms

10 ms

100 ms
1 s, DC

00010111.0

is specified

Limited by R

10

- Drain Current (A)I
1

D

0.1

* V

DS(on)*

TC = 25 °C

Single Pulse

VDS- Drain-to-Source Voltage (V)

> minimum VGSat which R

GS

Safe Operating Area

0.2

0.1

0.1

Thermal Impedance

Normalized Effective Transient

0.01

4

-

10

0.02

0.05

Single Pulse

3

-

10

2

-

10

Square Wave Pulse Duration (s)

1

-

1

1010

30

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71768

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.

Document Number: 71768

S09-1501-Rev. D, 10-Aug-09

www.vishay.com

Package Information

Vishay Siliconix

TO-252AA Case Outline

E

b3

L3

D

L4

L5

b

e1

E1

b2

e

D1

A

C2

H

L

C

A1

gage plane height (0.5 mm)

MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX.

A 2.18 2.38 0.086 0.094

A1 - 0.127 - 0.005

b 0.64 0.88 0.025 0.035

b2 0.76 1.14 0.030 0.045

b3 4.95 5.46 0.195 0.215

C 0.46 0.61 0.018 0.024

C2 0.46 0.89 0.018 0.035

D 5.97 6.22 0.235 0.245

D1 4.10 - 0.161 -

E 6.35 6.73 0.250 0.265

E1 4.32 - 0.170 -

H 9.40 10.41 0.370 0.410

e 2.28 BSC 0.090 BSC

e1 4.56 BSC 0.180 BSC

L 1.40 1.78 0.055 0.070

L3 0.89 1.27 0.035 0.050

L4 - 1.02 - 0.040

L5 1.01 1.52 0.040 0.060

ECN: T13-0359-Rev. O, 03-Jun-13
DWG: 5347

Notes

• Dimension L3 is for reference only.

• Xi’an, Mingxin, and GEM SH actual photo.

Revision: 03-Jun-13

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 71197

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

0.224

(5.690)

Application Note 826

Vishay Siliconix

0.243
(6.180)

Return to Index

Return to Index

0.420
(10.668)

0.180

(4.572)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.087

0.090

0.055

(1.397)

(2.202)

(2.286)

APPLICATION NOTE

Document Number: 72594 www.vishay.com
Revision: 21-Jan-08 3

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Revision: 02-Oct-12

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