Datasheet SUD23N06-31L-E3 Specification

SUD23N06-31L

Vishay Siliconix

N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level

PRODUCT SUMMARY

VDS (V) r

60

TO-252

Top View

Ordering Information: SUD23N06-31L

DS(on)

0.031 at V

0.045 at V

SGD

GS

GS

Drain Connected to Tab

SUD23N06-31L-E3 (Lead (Pb)-free)

(Ω)

= 10 V

= 4.5 V

I

D

(A)

23

19.5

a

FEATURES

• TrenchFET® Power MOSFET

• 175 °C Junction Temperature

D

G

S

N-Channel MOSFET

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Gate-Source Voltage

Continuous Drain Current (T

= 175 °C)

J

b

TC = 25 °C

T

= 100 °C

C

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Avalanche Current

Single Avalanche Energy (Duty Cycle ≤ 1 %) L = 0.1 mH

= 25 °C

T

Maximum Power Dissipation

C

= 25 °C

T

A

Operating Junction and Storage Temperature Range

V

GS

I

D

I

DM

I

S

I

AS

E

AS

P

D

, T

T

J

stg

± 20 V

23

16.5

50

23

20

20 mJ

100

3

a

W

- 55 to 175 °C

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 10 sec

Steady State

Maximum Junction-to-Case

Notes:
a. Surface Mounted on 1" x 1" FR4 board, t ≤ 10 sec.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72145
S-71660-Rev. C, 06-Aug-07

R

thJA

R

thJC

18 22

40 50

3.2 4

°C/W

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SUD23N06-31L

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

b

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

a

b

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

c

c

c

c

c

c

c

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

b

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Qgd

t

d(on)

t

r

t

d(off)

t

f

VGS = 0 V, ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 60 V, V

DS

V

= 60 V, V

DS

V

= 60 V, V

DS

= 5 V, V

DS

V

= 10 V, ID = 15 A

GS

V

= 10 V, ID = 15 A, TJ = 125 °C

GS

V

= 10 V, ID = 15 A, TJ = 175 °C

GS

V

= 4.5 V, ID = 10 A

GS

GS

= 0 V, TJ = 125 °C

GS

= 0 V, TJ = 175 °C

GS

= 10 V

GS

VDS = 15 V, ID = 15 A

VGS = 0 V, V

VDS = 30 V, V

V

DD

≅ 23 A, V

I

D

= 25 V, f = 1 MHz

DS

= 10 V, ID = 23 A

GS

= 30 V, RL = 1.3 Ω

= 10 V, Rg = 2.5 Ω

GEN

60

1.0 2.0 3.0

= 0 V

50 A

Source-Drain Diode Ratings and Characteristics (TC = 25 °C)

Pulsed Current

Diode Forward Voltage

Reverse Recovery Time

I

SM

V

SD

t

rr

IF = 15 A, V

IF = 15 A, di/dt = 100 A/µs

GS

= 0 V

Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

a

Typ

Max Unit

± 100 nA

1

50

250

0.025 0.031

0.055

0.069

0.037 0.045

20 S

670

140

60

11 17

3

3

815

15 25

30 45

25 40

50

1.0 1.5 V

30 60 ns

V

µA

Ω

pFOutput Capacitance

nC

ns

A

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Document Number: 72145

S-71660-Rev. C, 06-Aug-07

TYPICAL CHARACTERISTICS 25 °C unless noted

SUD23N06-31L

Vishay Siliconix

50

VGS = 10 thru 6 V

40

30

20

- Drain Current (A)I

D

10

0

0246810

VDS - Drain-to-Source Voltage (V)

5 V

4 V

3 V

Output Characteristics

32

TC = - 55 °C

24

16

- Transconductance (S)g
8

fs

25 °C

125 °C

- Drain Current (A)I

D

- On-Resistance (Ω)

DS(on)

r

50

40

30

20

10

0

0123456

TC = 125 °C

25 °C

- 55 °C

VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

0.10

0.08

0.06

0.04

0.02

VGS = 4.5 V

VGS = 10 V

0

0 5 10 15 20 25

1000

800

600

400

C - Capacitance (pF)

200

C

rss

0

0 102030405060

V

Document Number: 72145
S-71660-Rev. C, 06-Aug-07

- Drain Current (A)

I

D

Transconductance

C

iss

C

oss

- Drain-to-Source Voltage (V)

DS

Capacitance

0.00

10

- Gate-to-Source Voltage (V)

GS

V

0 1020304050

ID - Drain Current (A)

On-Resistance vs. Drain Current

VDS = 30 V

8

I

= 23 A

D

6

4

2

0

024681012

Qg - Total Gate Charge (nC)

Gate Charge

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SUD23N06-31L

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C unless noted

2.5

V

= 10 V

GS

I

= 15 A

D

2.0

1.5

- On-Resistance

1.0

(Normalized)

DS ( on)

r

0.5

0.0

- 50 - 25 0 25 50 75 100 125 150 175

T J - Junction T emperature ( °C)

On-Resistance vs. Junction Temperature

100

T

= 150 °C

J

10

- Source Current (A)I

S

1

0

0.3 0.6 0.9 1.2 1.5

VSD - Source-to-Drain Voltage (V)

T

J

= 25 °C

Source-Drain Diode Forward Voltage

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Document Number: 72145

S-71660-Rev. C, 06-Aug-07

THERMAL RATINGS

SUD23N06-31L

Vishay Siliconix

25

20

15

10

- Drain Current (A)I
D

5

0

0 25 50 75 100 125 150 175

TA - Ambient Temperature (°C)

Maximum Drain Current

vs. Ambient Temperature

2

1

Duty Cycle = 0.5

0.2

0.1

100

*r

Limited

DS(on)

10

- Drain Current (A)I
1

D

TC = 25 °C

Single Pulse

0.1

0.1 1 10 100

VDS - Drain-to-Source Voltage (V)

*V

> minimum VGS at which r

GS

DS(on)

Safe Operating Area

is specified

10 µs

100 µs

1 ms

10 ms

100 ms

dc

0.1

Thermal Impedance

Normalized Effective Transient

0.0110-

0.02

Single Pulse

4

0.05

-

3

10

-

2

10

Square Wave Pulse Duration (sec)

-

1

10

1

10

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech­nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72145.

Document Number: 72145
S-71660-Rev. C, 06-Aug-07

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Revision: 18-Jul-08 1