Page 1
■ SILICON EPI TAX IA L PLANAR PN P
TRANSISTORS
■ MINIATURE PLA STI C PACKA G E FOR
APPLICAT ION IN SURFACE MOUNT ING
CIRCUITS
■ GENERAL PURPOSE MAINLY INTENDED
FOR USE IN MEDIUM PO W ER INDUS T RIA L
APPLICAT ION AND FOR AUDI O AMPLIF IER
OUTPUT STAGE
STZT5401
MEDIUM POWER AMPLIFIER
ADVANCE DATA
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
P
T
Collector-Base Voltage (IE = 0) -180 V
CBO
Collector-Emitter Voltage (IB = 0) -160 V
CEO
Emitter-Base Voltage (IC = 0) -5 V
EBO
Collector Current -0.6 A
I
C
Total Dissipation at Tc = 25 oC -1.5 W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
October 1997
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Page 2
STZT5401
THERMAL DATA
R
R
• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
thj-amb
thj-tab
•
Thermal Resistance Junction-Ambient Max
•
Thermal Resistance Junction-Collecor Tab Max
62.5
8
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
(BR)CBO
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
E
Collector-Base
= -120 V -50 nA
V
CB
= -3 V -50 nA
V
EB
I
= -100 µA -160 V
C
Breakdown Voltage
(IE = 0)
V
(BR)CEO
∗ Collector-Emitter
= -1 mA -150 V
I
C
Breakdown Voltage
(I
= 0)
B
V
(BR)EBO
Emitter-Base
= -10 µA -5 V
I
C
Breakdown Voltage
(I
= 0)
C
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = -1 mA VCE = -5 V
FE
h
Small Signal Current
fe
IC = -10 mA IB = -1 mA
I
= -50 mA IB = -5 mA
C
IC = -10 mA IB = -1 mA
I
= -50 mA IB = -5 mA
C
-0.2
-0.5
-1
-1
50
I
= -10 mA VCE = -5 V
C
I
= -50 mA VCE = -5 V
C
60
50
240
IC = -1 mA VCE = -10 V f = 1 KHz 40 200
Gain
f
C
CBO
Transition Frequency IC = -10 mA VCE = -10 V f = 1 MHz 100 400 MHz
T
Collector-Base
IE = 0 VCB = -10 V f = 1 MHz 6 pF
Capacitance
F Noise Figure f = 1 KHz ∆F = 200 Hz R
I
= -0.25 mA VCE = -5 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
C
= 1KΩ
G
5dB
V
V
V
V
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Page 3
SOT-223 MECHANICAL DATA
STZT5401
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
a 2.27 2.3 2.33 89.4 90.6 91.7
b 4.57 4.6 4.63 179.9 181.1 182.3
c 0.2 0.4 0.6 7.9 15.7 23.6
d 0.630.650.6724.825.626.4
e1 1.5 1.6 1.7 59.1 63 66.9
e4 0.32 12.6
f 2.9 3 3.1 114.2 118.1 122.1
g 0.67 0.7 0.73 26.4 27.6 28.7
l1 6.7 7 7.3 263.8 275.6 287.4
l2 3.5 3.5 3.7 137.8 137.8 145.7
L 6.3 6.5 6.7 248 255.9 263.8
mm mils
L
e1
a
b
f
C
l1
B
C
E
g
d
l2
c
e4
P008B
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STZT5401
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of pat e nts or ot her rights o f third partie s which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SG S-THOMSON Microelectroni cs. Specifications ment ioned
in this publication are subject to cha nge wi t hout n o tice. This p u bli ca t ion sup e rsed e s and r epla ces al l inf ormat i on pr ev io us ly supplied.
SGS-THOMSON Microelectronics products are not auth orized for use as critical components in life support devices or systems without express
written approval of SGS-THOM SO N M icroelecto nics.
© 1997 SGS-THOMSON Microelectronics - Printed in Ita ly - All Right s Rese rved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
.
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