Page 1
N-channel 600 V, 0.030 Ω, 74 A, MDmesh™ II Power MOSFET
Features
@
V
Type
STY80NM60N 650 V < 0.035 Ω 74 A
DSS
T
Jmax
R
DS(on)
max I
STY80NM60N
Max247
D
■ The worldwide best R
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
DS(on)
in Max247
Application
■ Switching applications
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
Max247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
STY80NM60N 80NM60N Max247 Tube
February 2009 Rev 5 1/12
www.st.com
12
Page 2
Contents STY80NM60N
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/12
Page 3
STY80NM60N Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt
T
stg
T
1. Pulse width limited by safe operating area
2. ISD ≤ 74 A, di/dt ≤ 400 A/µs, VDD = 80% V
Drain-source voltage (VGS = 0) 600 V
Gate- source voltage ±25 V
Drain current (continuous) at TC = 25 °C 74 A
Drain current (continuous) at TC = 100 °C 46 A
(1)
Drain current (pulsed) 296 A
Total dissipation at TC = 25 °C 447 W
(2)
Peak diode recovery voltage slope 15 V/ns
Storage temperature –55 to 150 °C
Max. operating junction temperature 150 °C
j
(BR)DSS
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
R
thj-amb
T
Thermal resistance junction-case max 0.28 °C/W
Thermal resistance junction-ambient max 30 °C/W
Maximum lead temperature for soldering
l
purpose
300 °C
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
AS
E
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj = 25°C, I
= IAS, V
D
DD
= 50 V)
25 A
2J
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Page 4
Electrical characteristics STY80NM60N
2 Electrical characteristics
(T
=25 °C unless otherwise specified)
CASE
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
dv/dt
I
DSS
I
GSS
V
GS(th)
R
DS(on)
1. Characteristic value at turn off on inductive load
Drain-source
breakdown voltage
(1)
Drain source voltage slope
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
ID = 1 mA, VGS = 0 600 V
Vdd = 480 V, Id = 74 A,
Vgs = 10 V
48 V/ns
VDS = Max rating
VDS = Max rating, @125 °C
VGS = ± 20 V 100 nA
Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
Static drain-source on
resistance
= 10 V, ID = 37 A 0.030 0.035 Ω
V
GS
1
100µAµA
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
C
C
oss eq.
fs
C
C
Forward transconductance VDS=15 V, ID = 37 A 12 S
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
Equivalent output
(2)
capacitance
= 50 V, f = 1 MHz,
V
DS
= 0
V
GS
V
= 0, VDS = 0 to 480 V 1300 pF
GS
10100
455
26
pF
pF
pF
Q
Q
Q
R
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
2. C
oss eq.
increases from 0 to 80% V
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
Gate input resistance
g
is defined as a constant equivalent capacitance giving the same charging time as C
DS
4/12
VDD = 480 V, ID = 74 A,
V
= 10 V,
GS
(see Figure 15)
f=1 MHz Gate DC Bias=0
Test signal level = 20 mV
open drain
360
85
160
2.0 Ω
when VDS
oss
nC
nC
nC
Page 5
STY80NM60N Electrical characteristics
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
t
t
Turn-on delay time
Rise time
r
Turn-off delay time
Fall time
f
= 300 V, ID = 37 A
V
DD
= 4.7 Ω VGS = 10 V
R
G
(see Figure 14)
50
65
440
200
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
t
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Source-drain current
(1)
Source-drain current (pulsed)
(2)
Forward on voltage ISD = 74 A, VGS = 0 1.5 V
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
ISD = 74 A, di/dt = 100 A/µs
= 100 V, Tj = 25 °C
V
DD
(see Figure 16)
ISD = 74 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 16)
74
296AA
700
25
65
840
30
69
ns
ns
ns
ns
ns
µC
A
ns
µC
A
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Electrical characteristics STY80NM60N
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance
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Page 7
STY80NM60N Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
V
GS
(V)
12
10
8
6
4
2
0
0
100
GS
=10V
V
VDD=480V
D
=74A
I
200 300 400
HV42900
g
(nC)
Q
Figure 10. Normalized gate threshold voltage
vs temperature
C(pF)
HV42890
10000
1000
f=1MHz
GS
=0
V
100
10
1
1
10
100
Figure 11. Normalized on resistance vs
temperature
Ciss
Coss
Crss
DS
(V)
V
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized BV
vs temperature
DSS
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Page 8
Test circuits STY80NM60N
3 Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 15. Gate charge test circuit
Figure 17. Unclamped inductive load test
circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
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Page 9
STY80NM60N Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
9/12
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Package mechanical data STY80NM60N
Max247 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.70 5.30
A1 2.20 2.60
b 1.00 1.40
b1 2.00 2.40
b2 3.00 3.40
c 0.40 0.80
D 19.70 20.30
e5.35 5.55
E 15.30 15.90
L 14.20 15.20
L1 3.70 4.30
mm inch
10/12
P025Q
Page 11
STY80NM60N Revision history
5 Revision history
Table 9. Document revision history
Date Revision Changes
29-Nov-2007 1 First release
04-Dec-2007 2 Header has been corrected
04-Aug-2008 3 Document status promoted: from preliminary data to datasheet.
14-Nov-2008 4
04-Feb-2009 5 Figure 7: Static drain-source on resistance has been corrected
Figure 13: Normalized BV
corrected
vs temperature has been
DSS
11/12
Page 12
STY80NM60N
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