Page 1
N - CHANNEL 1000V - 0.65 Ω - 15A - Max247
TYPE V
DSS
STY15NA100 1000 V < 0.77 Ω 15 A
R
DS(on)
I
D
STY15NA100
MOSFET
PRELIMINARY DATA
■ TYPICAL R
■ EFFICIENT AND RELIABLE MOUNTING
DS(on)
= 0.65 Ω
THROUGH CLIP
■ ± 30V GATE TO SOURCE VOLTA GE RATING
■ REPETITIVE AVA LANCHE TES TED
■ LOW INTRINSIC CAPACITANCE
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ REDUCED THRESHOLD VO LTA GE SPREA D
DESCRIPTION
The Max247
TM
package is a new high volume
power package exibiting the same footprint as the
industry standard TO-247, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages such as TO-264. The
increased die capacity makes the device ideal to
reduce component count in multiple paralleled
designs and save board space with respect to
larger packages.
APPLICATIONS
■ HIGH CURRENT, HIGH SPE ED SWI TCHING
■ SWITC H MODE POWER SU PPLIES ( SMPS)
■ DC-AC CONVE RTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SU PP LIE S (UPS)
3
2
1
Max247
TM
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
IDM(•) Drain Current (pulsed) 60 A
P
T
(•) Pulse width limited by safe operating area
April 1998
Drain-source Voltage (VGS = 0) 1000 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC15A
D
I
Drain Current (continuous) at Tc = 100 oC 9.5 A
D
Total Dissipation at Tc = 25 oC 300 W
tot
Derating Factor 2.4 W/oC
Storage Temperature -55 to 150
stg
T
Max. Operating Junction Temperature 150
j
1000 V
o
C
o
C
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STY15NA100
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-si n k
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-Heatsink Typ
with Conductive Grease
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
max
j
DD
= 50 V)
0.42
40
0.05
15 A
3000 mJ
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
1000 V
= 0
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating x 0.8 Tc = 125 oC
DS
V
= ± 30 V
GS
50
500
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
2.25 3 3.75 V
Voltage
R
DS(on)
Static Drain-source On
VGS = 10 V ID = 7.5 A 0.65 0.77 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
15 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗) Forward
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 7.5 A 12 S
= 0 7000
GS
600
150
µA
µA
Ω
pF
pF
pF
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STY15NA100
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING O N
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
(di/dt)
Turn-on Time
Rise Time
t
r
Turn-on Current Slope V
on
V
= 500 V ID = 7.5 A
DD
RG = 4.7 Ω VGS = 10 V
= 800 V ID = 15 A
DD
= 47 Ω VGS = 10 V
R
G
40
55
260 A/µs
ns
ns
Q
Q
Q
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
= 800 V ID = 15 A V
DD
= 10 V 470
GS
45
150
320 nC
SWITCHING O F F
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise Time
Fall Time
f
Cross-over Time
c
V
= 800 V ID = 15 A
DD
= 4.7 Ω VGS = 10 V
R
G
110
25
150
SOURCE DRAIN DIO DE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
15
60
(pulsed)
(∗) Forward On Voltage ISD = 15 A VGS = 0 2 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 15 A di/dt = 100 A/µs
SD
V
= 100 V Tj = 150 oC
DD
1400
42
Charge
Reverse Recovery
60
Current
nC
nC
ns
ns
ns
A
A
ns
µC
A
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STY15NA100
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificat ions mentioned
in this publication are subject to change without not ice. This publicat ion supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON M icroelectonics.
© 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
4/5
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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