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STX93003
HIGH VOLTAGE FAS T-SWITCHING
PNP POWER TRANSISTOR
■ ST93003 SILICON IN TO-92 PACKAGE
■ MEDIUM VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNA M IC PARA ME TERS
■ MINIMUM LO T- TO - LOT SPREAD F O R
RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
APPLICATIONS:
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STX93003 is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the STX83003, its
complementary NPN transistor.
®
INTER NAL SCH E M ATI C DIAG RA M
October 2002
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (VBE = 0) -500 V
V
CEO
Collector-Emitter Voltage (IB = 0) -400 V
V
EBO
Emitter-Base Voltage (IC = 0)
(IC = 0, IB = -0.5 A, tp < 10µs, Tj < 150oC)
V
(BR)EBO
V
I
C
Collector Current -1 A
I
CM
Collector Peak Current (tp < 5 ms) -3 A
I
B
Base Current -0.5 A
I
BM
Base Peak Current (tp < 5 ms) -1.5 A
P
tot
Total Dissipation at TC = 25 oC 1.5 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
TO-92
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THERMAL DATA
R
thj-case
R
thj-Amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
83.3
200
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= -500V
V
CE
= -500V T
j
= 125oC
-1
-5
mA
mA
V
(BR)EBO
Emitter Base
Breakdown Voltage
(I
C
= 0)
I
E
= -10 mA -5 -10 V
V
CEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= -10 mA
L = 25 mH
-400 V
V
CE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = -0.5 A IB = -0.1 A
I
C
= -0.35 A IB = -50 mA
-0.5
-0.5
V
V
V
BE(sat)
∗ Base-Emitter
Saturation Voltage
IC = -0.5 A IB = -0.1 A -1 V
h
FE
∗ DC Current Gain IC = -10 mA V
CE
= -5 V
I
C
= -0.35 A V
CE
= -5 V
I
C
= -1 A V
CE
= -5 V
10
16
4
25 32
t
r
t
s
t
f
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
I
C
= -0.35 A VCC = 125 V
I
B1
= -70 mA IB2 = 70 mA
T
p
≥ 25 µs (see Figure 2)
1.5
90
2.2
0.1
2.9
ns
µs
µs
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
IC = -0.5 A IB1 = -0.1 A
V
BE(off)
= 5 V L = 10 mH
V
clamp
= 300 V (see Figure 1)
400
40
ns
ns
E
sb
Avalanche Energy L = 4 mH C = 1.8 nF
I
BR
≤ 2.5 A 25oC < TC < 125oC
12 mJ
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %.
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Safe Operating Are a
DC Current Gain
Collector Emitter Saturation Voltage
Derating Curve
DC Current Gain
Base Emitter Sat uration Volt ag e
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Resistive Load Fall Tim e Resistive Load Storage Time
Reverse B iased SOA
Inductive Load Fall Time Inductive Load Storage Time
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Figure 1: Inductive Load Switchi ng Test Circuit.
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
1) Fast electronic switch
2) Non-inductive Resistor
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DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.32 4.95 0.170 0.195
b 0.36 0.51 0.014 0.020
D 4.45 4.95 0.175 0.194
E 3.30 3.94 0.130 0.155
e 2.41 2.67 0.095 0.105
e1 1.14 1.40 0.045 0.055
L 12.70 15.49 0.500 0.609
R 2.16 2.41 0.085 0.094
S1 1.14 1.52 0.045 0.059
W 0.41 0.56 0.016 0.022
V 4 degree 6 degree 4 degree 6 degree
TO-92 MECHANICA L DAT A
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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STX93003
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