Page 1
®
PNP MEDIUM POWER TRANSISTOR
Type Marking
STX817 X817
■ DEVICE SUIT AB LE FO R THRO UG H- HO LE
PCB ASSEMBLY
APPLICATIONS
■ VOLTAGE REGULATION
■ RELAY DRIVER
■ GENERIC SWITCH
DECRIPTION
The STX817 is a PNP transistor manufactured
using Planar Technology resulting in rugged high
performance devices.
STX817
TO-92
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-Base Voltage (IE = 0) -120 V
CBO
Collector-Emitter Voltage (IB = 0) -80 V
CEO
Emitter-Base Voltage (IC = 0) -5 V
EBO
Collector Current -1.5 A
I
C
Collector Peak Current (tp < 5 ms) -2 A
CM
Base Current -0.3 A
I
B
Base Peak Current (tp < 5 ms) -0.6 A
BM
Total Dissipation at T
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
= 25 oC 0.9 W
amb
o
C
o
C
April 2002
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Page 2
STX817
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
44.6
139
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= -120 V -500 µA
V
CE
= -80 V -1 mA
V
CE
= -5 V -100 µA
V
EB
I
= -10 mA -80 V
C
Sustaining Voltage
(I
= 0)
B
V
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
∗ Collector-Emitter
CE(sat)
Saturation Voltage
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = -100 mA VCE = -2 V
FE
f
Transition Frequency IC = -0.1 A VCE = -10 V 50 MHz
T
IC = -100 mA IB = -10 mA
I
= -1 A IB = -100 mA
C
IC = -100 mA IB = -10 mA
I
= -1 A IB = -100 mA
C
I
= -500 mA VCE = -2 V
C
I
= -1 A VCE = -2 V
C
-0.25
-0.5
-1
-1.1
140
80
40
V
V
V
V
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Page 3
TO-92 MECHANICA L DAT A
STX817
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.32 4.95 0.170 0.195
b 0.36 0.51 0.014 0.020
D 4.45 4.95 0.175 0.194
E 3.30 3.94 0.130 0.155
e 2.41 2.67 0.095 0.105
e1 1.14 1.40 0.045 0.055
L 12.70 15.49 0.500 0.609
R 2.16 2.41 0.085 0.094
S1 1.14 1.52 0.045 0.059
W 0.41 0.56 0.016 0.022
V 4 degree 6 degree 4 degree 6 degree
mm inch
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STX817
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectro nics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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