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Features
■ High voltage capability
■ High DC current gain
■ Minimum lot-to-lot spread for reliable operation
Applications
■ Switching mode power supply
■ Battery charger
STX616
High voltage NPN power transistor
Description
The device is manufactured using high voltage
multi epitaxial planar technology for high switching
speeds and high voltage withstand capability. The
device is designed for use in SMPS and battery
charger.
TO-92 TO-92AP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
STX616 X616 TO-92 Bulk
STX616-AP X616 TO-92AP Ammopack
October 2007 Rev 2 1/8
www.st.com
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Electrical characteristics STX616 STX616-AP
1 Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-emitter voltage (VBE = 0) 980 V
CES
Collector-emitter voltage (IB = 0) 500 V
CEO
Emitter-base voltage (IC = 0) 12 V
EBO
I
Collector current 1.5 A
C
Collector peak current (tP < 5ms) 2.4 A
CM
I
Base current 0.8 A
B
Base peak current (tP < 5ms) 1.2 A
BM
Total dissipation at Tc = 25°C 2.8 W
tot
Storage temperature -65 to 150 °C
stg
T
Max. operating junction temperature 150 °C
J
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
R
thj-amb
Thermal resistance junction-case __max
Thermal resistance junction-ambient __max
44.6
150
°C/W
°C/W
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STX616 STX616-AP Electrical characteristics
2 Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
= 980V
I
V
CE(sus)
V
V
CE(sat)
V
BE(sat)
h
CES
EBO
FE
Collector cut-off current
=0)
(V
BE
Collector-emitter
(1)
sustaining voltage
(I
= 0)
B
Emitter-base voltage
= 0)
(I
C
(1)
Collector-emitter
saturation voltage
Base-emitter saturation
(1)
voltage
(1)
DC current gain
V
CE
= 980V Tc = 125°C
V
CE
I
= 10mA
C
= 1mA
I
E
I
= 0.2A IB = 40mA
C
I
= 1A IB = 200mA
C
I
= 0.2A IB = 40mA
C
I
= 1A IB = 200mA
C
I
= 500µA V
C
I
= 200mA V
C
= 500mA V
I
C
= 1.5A V
I
C
CE
CE
CE
= 2V
= 5V
= 5V
CE
= 5V
50
0.5µAmA
500 V
12 V
0.5
1
1
1.4
17
25
12
4
V
V
V
V
RESISTIVE LOAD
t
on
t
t
s
f
Turn-on time
Storage time
Fall time
= 250V IC = 250mA
V
CC
I
= 65mA I
B1
RESISTIVE LOAD
t
on
t
t
s
f
Turn-on time
Storage time
Fall time
INDUCTIVE LOAD
t
s
t
f
Storage time
Fall time
INDUCTIVE LOAD
t
s
t
f
Storage time
Fall time
= 250V IC = 0.8A
V
CC
I
= 160mA I
B1
= 300V IC = 250mA
V
cl
= 65mA I
I
B1
L = 200µH
= 300V IC = 0.8A
V
cl
I
= 160mA I
B1
L = 200µH
Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5%
= -130mA
B2
= -0.4A
B2
= -130mA
B2
= -0.4A
B2
0.2
0.65
2.5
0.35
0.5
µs
5
µs
µs
µs
1
µs
µs
5
µs
µs
2.5
0.25µsµs
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Package mechanical data STX616 STX616-AP
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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STX616 STX616-AP Package mechanical data
TO-92 BULK SHIPMENT MECHANICAL DATA
DIM.
MIN. TYP MAX.
A 4.32 4.95
b 0.36 0.51
D 4.45 4.95
E 3.30 3.94
e 2.41 2.67
e1 1.14 1.40
L 12.70 15.49
R 2.16 2.41
S1 0.92 1.52
W 0.41 0.56
V5
mm.
O
0102782 C
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Page 6
Package mechanical data STX616 STX616-AP
TO-92 AMMOPACK SHIPMENT (Suffix”-AP”) MECHANICAL DATA
DIM.
A1 4.80
T 3.80
T1 1.60
T2 2.30
d 0.48
P0 12.50 12.70 12.90
P2 5.65 6.35 7.05
F1,F2 2.44 2.54 2.94
delta H -2.00 2.00
W 17.50 18.00 19.00
W0 5.70 6.00 6.30
W1 8.50 9.00 9.25
W2 0.50
H 18.50 20.50
H0 15.50 16.00 16.50
H1 25.00
D0 3.80 4.00 4.20
t 0.90
L 11.00
I1 3.00
delta P -1.00 1.00
MIN. TYP MAX.
mm.
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Page 7
STX616 STX616-AP Revision history
4 Revision history
Table 5. Document revision history
Date Revision Changes
06-Jun-2007 1 Initial release.
22-Oct-2007 2 Added TO-92AP package.
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STX616 STX616-AP
y
y
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