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STWH13009
3
High voltage fast-switching NPN power transistor
Features
■ High voltage capability
■ Low spread of dynamic parameters
■ Very high switching speed
Applications
■ Switching mode power supplies
Description
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds anh high voltage capability.
It uses a Hollow Emitter structure to enhance
switching speeds.
.
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
STWH13009 WH13009 TO-247 Tube
October 2007 Rev 1 1/9
www.st.com
9
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Absolute maximum ratings STWH13009
1 Absolute maximum ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-emitter voltage (VBE = -1.5V) 700 V
CEV
Collector-emitter voltage (IB = 0) 400 V
CEO
Emitter-base voltage (IC = 0) 12 V
EBO
I
Collector current 12 A
C
Collector peak current (tp < ms) 24 A
CM
I
Base current 6 A
B
Base peak current (tp < ms) 12 A
BM
Total dissipation at T
TOT
Storage temperature -65 to 150 °C
stg
T
Max. operating junction temperature 150 °C
J
= 25°C 125 W
case
Table 3. Thermal data
Symbol Parameters Value Unit
R
thj-case
Thermal resistance junction-case __max 1 °C/W
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Page 3
STWH13009 Electrical characteristics
2 Electrical characteristics
(T
= 25°C; unless otherwise specified)
case
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
= 700 V
I
CEV
I
EBO
Collector cut-off current
= -1.5V)
(V
BE
Emitter cut-off current
= 0)
(I
C
Collector-emitter
(1)
V
CEO(sus)
V
CE(sat)
V
BE(sat)
h
FE
sustaining voltage
= 0)
(I
B
Collector-emitter
(1)
saturation voltage
Base-emitter saturation
(1)
voltage
(1)
DC current gain
Inductive load
t
s
t
f
1. Pulsed duration = 300 ms, duty cycle ≥1.5%.
Storage time
Fall time
V
CE
= 700 V TC = 100°C
V
CE
= 10 V
V
EB
I
= 10 mA
C
I
= 4 A __ IB = 0.8 A
C
I
= 5 A __ IB = 1 A
C
= 8 A __ IB = 1.6 A
I
C
= 12 A _ IB = 2.4 A
I
C
I
= 5 A __ IB = 1 A
C
= 8 A __ IB = 1.6 A
I
C
= 5 A _ V
I
C
I
= 8 A _ V
C
= 250 V IC = 5A
V
CC
= 1 A I
I
B1
CE
CE
B2
= -2 A
L = 200 µH
=5 V
=5 V
µA
10
500
µA
10 µA
400 V
0.2
0.5
0.25
0.35
0.6
0.6
1
2
1.2
1.6VV
1.7
30
23
2.5
140µsns
18
11
100
V
V
V
V
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Electrical characteristics STWH13009
2.1 Electrical characteristic (curves)
Figure 2. Safe operating area Figure 3. Derating curve
Figure 4. DC current gain Figure 5. DC current gain
Figure 6. Collector-emitter saturation
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voltage
Figure 7. Base-emitter saturation
voltage
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STWH13009 Electrical characteristics
Figure 8. Inductive load switching time Figure 9. Reverse biased safe
operating area
2.2 Test circuit
Figure 10. Inductive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
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Package mechanical data STWH13009
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in
ECOPACK® packages. These packages have a Lead-free second level
interconnect . The category of second level interconnect is marked on the
package and on the inner box label, in compliance with JEDEC Standard JESD97.
The maximum ratings related to soldering conditions are also marked on the inner
box label. ECOPACK is an ST trademark. ECOPACK specifications are available
at: www.st.com
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STWH13009 Package mechanical data
TO-247 Mechanical data
Dim.
Min. Typ Max.
A4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c0.40 0.80
D 19.85 20.15
E 15.45 15.75
e5.45
L 14.20 14.80
L1 3.70 4.30
L2 18.50
øP 3.55 3.65
øR 4.50 5.50
S5.50
mm.
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Revision history STWH13009
4 Revision history
Table 5. Document revision history
Date Revision Changes
19-Oct-2007 1 Initial Release
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STWH13009
y
y
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