Datasheet STW9NC80Z Datasheet (SGS Thomson Microelectronics)

STW9NC80Z

N-CHANNEL 800V - 0.82Ω - 9.4A TO-247

Zener-Protected PowerMESH™III MOSFET

TYPE V

DSS

R

DS(on)

I

D

STW9NC80Z 800 V <0.9Ω 9.4 A

n

TYPICAL RDS(on) = 0.82Ω

n

EXTREMELY HIGH dv /d t C APABILITY

n

GATE-TO-SOURCE ZENER DIODES

n

100% AVALANCHE TESTED

n

VERY LOW INTRINSIC CAPAC ITANCES

n

GATE CHARGE MINIMIZED

TO-247

DESCRIPTION

The third generation of MESH O VERLAY™ Power
MOSFETs for very high voltage exhibits unsur­passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil­ity with higher ruggedness performance as request­ed by a large variety of single-switch applications.

APPLICATIONS

n

SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION

n

WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

I

(1)

DM

P

TOT

I

GS

V

ESD(G-S)

dv/dt(

V

ISO

T

stg

T

j

(•)Pu l se width limited by safe operating area

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

800 V
800 V

Gate- source Voltage ±25 V

Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C

9.4 A

5.9 A
Drain Current (pulsed) 38 A
Total Dissipation at TC = 25°C

190 W
Derating Factor 1.52 W/°C
Gate-source Current ±50 mA
Gate source ESD(HBM-C=100pF, R=15KΩ) 4KV

●) Peak Diode Recovery voltage slope 3 V/ns

Insulation Winthstand Voltage (DC) -- V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

(1)ISD ≤9.4A, di/dt ≤100A/µs, VDD ≤ V

(BR)DSS

, Tj ≤ T

JMAX

1/8September 2002

STW9NC80Z

THERMA L D ATA

Rthj-case Thermal Resistance Junction-case Max 0.66 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W

Rthc-sink Thermal Resistance Case-sink Typ 0.1 °C/W

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Maximum Lead Temperature For Soldering Purpose 300 °C

l

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID = IAR, VDD = 50 V)

j

9.4 A

350 mJ

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS OTHERWISE SPECIFIED)

CASE

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID = 250 µA, VGS = 0 800 V

Breakdown Voltage

∆BV

/∆TJBreakdown Voltage Temp.

DSS

ID = 1 mA, VGS = 0 1

Coefficient

V

= Max Rating

DS

VDS = Max Rating, TC = 125 °C
V

= ±20V

GS

1µA

50 µA

±10 µA

ON

I

I

(1)

DSS

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

= VGS, ID = 250µA

DS

VGS = 10V, ID = 4.7A

345V

0.82 0.9 Ω

Resistance

I

D(on)

On State Drain Current VDS > I

V

GS

D(on)

=10V

x R

DS(on)max,

9.4 A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

fs

C

iss

C

oss

C

rss

Forward Transconductance VDS > I

I

=4.7A

D

Input Capacitance

V

DS

Output Capacitance 230 pF
Reverse Transfer

Capacitance

D(on)

x R

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

13 S

3500 pF

25 pF

V/°C

2/8

STW9NC80Z

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON (RESISTIVE LOAD)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

t

Q
Q
Q

r

gs
gd

Turn-on Delay Time
Rise Time 16 ns
Total Gate Charge

g

Gate-Source Charge 19.5 nC
Gate-Drain Charge 24.3 nC

SWITCHING OFF (INDUCTIVE LOAD)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

f

t

c

Off-voltage Rise Time
Fall Time 42 ns
Cross-over Time 67 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Source-drain Current 9.4 A

(2)

Source-drain Current (pulsed) 38 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge 7.2 µC
Reverse Recovery Current 19.5 A

= 400V, ID = 4.5A

DD

RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)

V

= 640V, ID = 9 A,

DD

VGS = 10V

V

= 640V, ID = 9 A,

DD

RG=4.7Ω, V

GS

= 10V

(see test circuit, Figure 5)

ISD = 9 A, VGS = 0
I

= 9 A, di/dt = 100A/µs,

SD

VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)

35 ns

72.2 101 nC

32 ns

1.6 V

730 ns

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 25 V

Voltage

αT Voltage Thermal Coefficient T=25°C Note(3) 1.3

I

Rz Dynamic Resistance

Note: 1. Pulsed: Pu l se duration = 300 µs, duty c ycle 1.5 %.

2. Pulse width li mited by safe operating area.

3. ∆V

= αT (25°-T ) BV

BV

GSO

(25°)

= 50 mA, VGS = 0

GS

90 Ω

10

-4

/°C

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specif ically been designed to enhanc e not only t he dev ice’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the 25V Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.

3/8

STW9NC80Z

Safe Operating Area For TO-247 Thermal Impedance For TO-247

Output Characteristics

Transfer Characteristics

Static Drain-source On ResistanceTransconductanc e

4/8

Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized On Resistance vs Temperatur eNormalized Gate Threshold Volta ge vs Temp.

STW9NC80Z

Source-drain Diode Forward Characteristics

5/8

STW9NC80Z

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/8

TO-247 MECHANICAL DATA

STW9NC80Z

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031

F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134

G 10.9 0.429

H 15.3 15.9 0.602 0.626

L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.582
L4 34.6 1.362
L5 5.5 0.217

M 2 3 0.079 0.118

mm inch

P025P

7/8

STW9NC80Z

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mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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systems without express written approval of STMicroelectronics.

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