Page 1
N-channel 200 V, 0.019 Ω, 83 A, TO-247
low gate charge STripFET™ Power MOSFET
Features
R
Type V
STW90NF20 200 V < 0.023 Ω 83 A
■ Exceptional dv/dt capability
■ Low gate charge
■ 100% Avalanche tested
DSS
Application
■ Switching applications
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced highefficiency isolated DC-DC converters
DS(on)
max
I
D
STW90NF20
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
STW90NF20 90NF20 TO-247 Tube
August 2008 Rev 2 1/12
www.st.com
12
Page 2
Contents STW90NF20
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
Page 3
STW90NF20 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
I
V
V
DM
I
I
DS
GS
D
D
Drain-source voltage (VGS = 0) 200 V
Gate-source voltage ± 20 V
Drain current (continuous) at TC = 25 °C 83 A
Drain current (continuous) at TC = 100 °C 52 A
(1)
Drain current (pulsed) 332 A
Derating factor 2.4 W/°C
P
TOT
dv/dt
T
Tstg
1. Pulse width limited by safe operating area
2. ISD ≤ 83 A, di/dt ≤ 400 A/µs, VDD ≤ 80% V
Total dissipation at TC = 25 °C 300 W
(2)
Peak diode recovery voltage slope 15 V/ns
Operating junction temperature
J
Storage temperature
(BR)DSS
-50 to 150 °C
Table 2. Thermal resistance
Symbol Parameter Value Unit
R
thj-case
R
thj-amb
T
Thermal resistance junction-case max 0.42 °C/W
Thermal resistance junction-ambient max 50 °C/W
Maximum lead temperature for soldering
l
purpose
300 °C
Table 3. Avalanche characteristics
Symbol Parameter Max value Unit
I
AR
E
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
max)
J
Single pulse avalanche energy
(starting T
= 25 °C, ID = IAR, V
J
DD
= 50 V)
83 A
400 mJ
3/12
Page 4
Electrical characteristics STW90NF20
2 Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown
voltage
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
= 0)
(V
DS
Gate threshold voltage V
Static drain-source on
resistance
= 1 mA, V
I
D
= Max rating,
V
DS
= Max rating @125 °C
V
DS
V
= ± 20 V ±100 nA
DS
= VGS, ID = 250 µA 2 3 4 V
DS
V
= 10 V, ID= 45 A 0.018 0.023 Ω
GS
= 0 200 V
GS
10
1
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
C
oss eq.
R
Q
Q
Q
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. C
increases from 0 to 80% V
Forward transconductance
Input capacitance
iss
Output capacitance
oss
Reverse Transfer
rss
Capacitance
Equivalent output
(2)
capacitance
Intrinsic gate resistance f = 1 MHz open drain 1.7 Ω
G
g
Total gate charge
Gate-source charge
gs
Gate-drain charge
gd
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
DSS
V
= 15 V, ID = 45 A
DS
= 25 V, f = 1 MHz,
V
DS
= 0
V
GS
VDS = 0 to 160 V, VGS = 0
= 160 V, ID = 83 A,
V
DD
= 10 V
V
GS
(see Figure 15)
40 S
5736
1126
196
687 pF
164
46
72
when VDS
oss
µA
µA
pF
pF
pF
nC
nC
nC
4/12
Page 5
STW90NF20 Electrical characteristics
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
Turn-on delay time
t
Rise time
r
Turn-off delay time
Fall time
t
f
= 100 V, ID = 41.5 A
V
DD
= 4.7 Ω, V
R
G
GS
(see Figure 14)
= 10 V,
24
138
148
142
ns
ns
ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
t
Q
I
RRM
1. Pulse with limited by maximum temperature
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Source-drain current
(1)
Source-drain current (pulsed)
(2)
Forward on voltage
rr
Reverse recovery time
Reverse recovery charge
rr
Reverse recovery current
rr
Reverse recovery time
Reverse recovery charge
rr
Reverse recovery current
= 83 A, VGS = 0
I
SD
= 83 A,VDD = 100 V
I
SD
di/dt = 100 A/µs
(see Figure 19)
=83 A, VDD = 100 V
I
SD
di/dt = 100 A/µs
= 150°C (see Figure 19)
T
j
200
1.6
16
235
2.2
18
83
332AA
1.6 V
ns
µC
A
ns
µC
A
5/12
Page 6
Electrical characteristics STW90NF20
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
ID(A)
10µs
AM00876v1
100
10
1
0.1
Operation in this area is
Limited by max R
1
DS(on)
10
100
100µs
1ms
10ms
V
DS(V)
Figure 4. Output characteristics Figure 5. Transfer characteristics
ID
(A)
VGS=10V
250
7V
200
6V
150
AM00877v1
ID(A)
250
200
150
AM00878v1
100
5V
50
4V
0
0
Figure 6. Normalized BV
BVDSS
(norm)
1.10
ID=1mA
V
GS=0
10
20
vs temperature Figure 7. Static drain-source on resistance
DSS
V
DS(V)
AM00879v1
1.05
1.00
0.95
0.90
0.85
0.8
-50
0
50
100
T
J(°C)
DS(on)
R
0.0178
0.0174
0.0170
0.0166
0.0162
100
(Ω)
50
0
2
0
4
6
8
10
V
DS(V)
AM00880v1
ID=45A
V
GS=0
10
5
15
20
25
30 35
40
I
D(A)
6/12
Page 7
STW90NF20 Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
GS
V
AM00881v1
(V)
VDD=160V
10
D=83A
I
V
GS=10V
8
6
4
2
0
0
50
100
150 200
Q
g(nC)
Figure 10. Normalized gate threshold voltage
VGS(th)
(norm)
1.1
1.0
0.9
0.8
0.7
vs temperature
ID=250µA
V
GS=VDS
AM00883v1
C
(pF)
10000
Ciss
1000
Coss
100
Crss
DS(V)
V
100
10
0.1
1
10
Figure 11. Normalized on resistance vs
temperature
RDS(on)
(norm)
2.5
2.0
1.5
1.0
AM00882v1
AM00884v1
0.6
0.5
-50
0
50
100
T
J(°C)
Figure 12. Source-drain diode forward
characteristics
VSD
(V)
1.0
Tj=-50°C
0.9
0.8
0.7
Tj=25°C
0.6
Tj=150°C
0.5
0
10
0
30
50
70
SD(A)
I
AM00885v1
0.5
0
-50
0
50
100
T
J(°C)
Figure 13. Maximum avalanche energy vs
temperature
EAS
(mJ)
400
350
300
250
200
150
100
50
0
10
0
30
50
70
90
110
130
T
J(°C)
AM00886v1
7/12
Page 8
Test circuits STW90NF20
3 Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 15. Gate charge test circuit
Figure 17. Unclamped inductive load test
circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
8/12
Page 9
STW90NF20 Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
Page 10
Package mechanical data STW90NF20
TO-247 Mechanical data
Dim.
Min. Typ Max.
A4.855.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c0.40 0.80
D19.85 20.15
E 15.45 15.75
e5.45
L 14.20 14.80
L1 3.70 4.30
L2 18.50
øP 3.55 3.65
øR 4.50 5.50
S 5.50
mm.
10/12
Page 11
STW90NF20 Revision history
5 Revision history
Table 8. Document revision history
Date Revision Changes
28-Aug-2007 1 First release
04-Aug-2008 2 Document status promoted from preliminary data to datasheet.
11/12
Page 12
STW90NF20
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