Datasheet stw75nf30 Datasheet

N-channel 300 V, 0.037 Ω, 60 A, TO-247

low gate charge STripFET™ Power MOSFET

Features

R

Type V

STW75NF30 300 V < 0.045 Ω 60 A 320 W

■ Exceptional dv/dt capability

■ Low gate charge

■ 100% Avalanche tested

DSS

Application

■ Switching applications

Description

This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high­efficiency isolated DC-DC converters

DS(on)

max

I

p

D

W

STW75NF30

3

2

1

TO-247

Figure 1. Internal schematic diagram

Table 1. Device summary

Order code Marking Package Packaging

STW75NF30 75NF30 TO-247 Tube

July 2008 Rev 3 1/12

www.st.com

12

Contents STW75NF30

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

2/12

STW75NF30 Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

I

V

V

DM

I

I

DS

GS

D

D

Drain-source voltage (VGS = 0) 300 V

Gate-source voltage ± 20 V

Drain current (continuous) at TC = 25 °C 60 A

Drain current (continuous) at TC = 100 °C 37.8 A

(1)

Drain current (pulsed) 240 A

Derating factor 2.56 W/°C

(2)

dv/dt

P

TOT

T

Tstg

1. Pulse width limited by safe operating area

2. ISD ≤ 60A, di/dt ≤ 200A/µs, V

Peak diode recovery voltage slope 12 V/ns

Total dissipation at TC = 25 °C 320 W

Operating junction temperature

J

Storage temperature

≤ 80% V

DD

(BR)DSS

-55 to 150 °C

Table 2. Thermal resistance

Symbol Parameter Value Unit

R

thj-case

R

thj-amb

T

Thermal resistance junction-case max 0.39 °C/W

Thermal resistance junction-ambient max 50 °C/W

Maximum lead temperature for soldering

l

purpose

300 °C

Table 3. Avalanche characteristics

Symbol Parameter Max. value Unit

I

AR

E

AS

Avalanche current, repetitive or not-repetitive
(pulse width limited by T

max)

J

Single pulse avalanche energy
(starting T

= 25 °C, ID = IAR, V

J

DD

= 50 V)

50 A

400 mJ

3/12

Electrical characteristics STW75NF30

2 Electrical characteristics

(T

=25°C unless otherwise specified)

CASE

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown
voltage

Zero gate voltage drain
current (VGS = 0)

Gate body leakage current

= 0)

(V

DS

Gate threshold voltage V

Static drain-source on
resistance

= 1 mA, V

I

D

= Max rating,

V

DS

= Max rating @125 °C

V

DS

V

= ± 20 V ±100 nA

DS

= VGS, ID = 250 µA 2 3 4 V

DS

V

= 10 V, ID= 30 A 0.037 0.045 Ω

GS

= 0 300 V

GS

10

1

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

g

fs

C

C

C

C

oss eq.

R

Q

Q

Q

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

2. C
increases from 0 to 80% V

Forward transconductance

Input capacitance

iss

Output capacitance

oss

Reverse Transfer

rss

Capacitance

Equivalent output

(2)

capacitance

Intrinsic gate resistance f = 1 MHz open drain 1.55 Ω

G

g

Total gate charge
Gate-source charge

gs

Gate-drain charge

gd

is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

oss eq.

DSS

V

= 15 V, ID = 30 A

DS

= 25 V, f = 1 MHz,

V

DS

= 0

V

GS

VDS = 0 to 240 V, VGS = 0

= 240 V, ID = 30 A,

V

DD

= 10 V

V

GS

(see Figure 15)

40 S

5930

837
110

462 pF

164

36
69

µA
µA

pF
pF
pF

nC
nC
nC

4/12

STW75NF30 Electrical characteristics

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

Turn-on delay time

t

Rise time

r

Turn-off delay time
Fall time

t

f

= 150 V, ID = 30 A

V

DD

= 4.7 Ω, V

R

G

(see Figure 14)

GS

= 10 V,

115

87
141
101

ns
ns
ns
ns

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

t

Q

I

RRM

1. Pulse with limited by maximum temperature

2. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Source-drain current
Source-drain current

(1)

(pulsed)

(2)

Forward on voltage

rr

Reverse recovery time
Reverse recovery charge

rr

Reverse recovery current

rr

Reverse recovery time
Reverse recovery charge

rr

Reverse recovery current

I

SD

I

SD

di/dt = 100 A/µs

(see Figure 19)

ISD =60 A, VDD = 60 V

di/dt = 100 A/µs

= 150°C (see Figure 19)

T

j

= 60 A, VGS = 0

= 60 A,VDD = 60 V

252

2.5

20

316

3.7

23.2

60

240

1.6 V

A
A

ns

µC

A

ns

µC

A

5/12

Electrical characteristics STW75NF30

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

I

D

AM00116v1

(A)

10

10µs

100µs

1ms

10ms

2

VDS(V)

2

10

1

10

Operation in this area is

0

10

-1

10

-1

10

limited by max R

0

10

DS(on)

10

1

Figure 4. Output characteristics Figure 5. Transfer characteristics

ID(A)

180

VGS=10V

160

140

120

6V

100

80

60

40

20

0

10

20

5V

4V

VDS(V)

AM00117v1

ID(A)

180

160

140

120

100

80

60

40

20

0

2

46

AM00118v1

VGS(V)

Figure 6. Normalized BV

BV

DSS

vs temperature Figure 7. Static drain-source on resistance

DSS

AM00124v1

(norm)

1.15

1.05

1.0

0.95

0.9

0.85

0.8

-75

-50

-25

025

50

75

100

125

150

TJ(°C)

6/12

R

DS(on)

(Ω)

0.035

0.0345

0.034

0.0335

AM00122v1

I

D

(A)

10

5

15

20 25

30

STW75NF30 Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

V

GS

(V)

12

V

GS

=10V

D

=60A

I

AM00119v1

VDD=240V

10

8

6

4

2

0

50

100

150

200

Qg(nC)

Figure 10. Normalized gate threshold volatge

V

(norm)

vs temperature

GS(th)

1.1

1.0

0.9

0.8

0.7

AM00125v1

C
(pF)

4

10

10

3

Ciss

Coss

10

10

2

1

10

10

0

10

1

-1

10

2

Crss

VDS(V)

Figure 11. Normalized on resistancevs

temperature

R

DS(on)

2.5

2.0

1.5

1.0

AM00120v1

AM00126v1

0.6

0.5

-75

-50

-25

025

100

150

TJ(°C)

125

75

50

Figure 12. Source-drain diode forward

characteristics

V

DS

(V)

0.9

0.8

0.7

0.6

0.5

0.4
0

10

304050

20

TJ=-50°C

25°C

150°C

60

SD

I

AM00123v1

(A)

0.5

0

-75

-50

-25

025

50

75

100

125

150

T

Figure 13. Maximum avalanche energy vs

temperature

E

AS

(mJ)

400

350

300

250

200

150

100

50

0

30

0

60

90 120

AM00121v1

J

(°C)

T

J

(°C)

7/12

Test circuits STW75NF30

3 Test circuits

Figure 14. Switching times test circuit for

resistive load

Figure 16. Test circuit for inductive load

switching and diode recovery times

Figure 15. Gate charge test circuit

Figure 17. Unclamped inductive load test

circuit

Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform

8/12

STW75NF30 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

9/12

Package mechanical data STW75NF30

TO-247 Mechanical data

Dim.

Min. Typ Max.

A4.855.15

A1 2.20 2.60

b 1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c0.40 0.80

D19.85 20.15

E 15.45 15.75

e5.45

L 14.20 14.80

L1 3.70 4.30

L2 18.50

øP 3.55 3.65

øR 4.50 5.50

S 5.50

mm.

10/12

STW75NF30 Revision history

5 Revision history

Table 8. Document revision history

Date Revision Changes

23-Oct-2007 1 First release

27-May-2008 2 New value inserted in Table 5: Dynamic

15-Jul-2008 3 Document status promoted from preliminary data to datasheet

11/12

STW75NF30

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