Datasheet stw27nm60nd Datasheet

FDmesh™ Power MOSFET (with fast diode)

Features

V

Type

STW27NM60ND 650 V < 0.16 Ω 21 A

DSS @

T

JMAX

R

DS(on)

max

STW27NM60ND

N-channel 600 V, 0.13 Ω, 21 A TO-247

Preliminary Data

I

D

■ The worldwide best R

*area amongst the

DS(on)

fast recovery diode devices

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Extremely high dv/dt and avalanche

capabilities.

Application

■ Switching applications

– Automotive

Description

The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout and
associates all advantages of reduced on­resistance and fast switching with an intrinsic fast­recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.

3

2

1

TO-247

Figure 1. Internal schematic diagram

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Table 1. Device summary

Order code Marking Package Packaging

STW27NM60ND 27NM60ND TO-247 Tube

March 2009 Rev 1 1/10

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.

www.st.com

10

Contents STW27NM60ND

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

2/10

STW27NM60ND Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

DS

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt

T

stg

T

1. Pulse width limited by safe operating area

2. ISD ≤ 21 A, di/dt ≤ 400 A/µs, VDD = 80% V

Drain-source voltage (VGS = 0) 600 V

Gate-source voltage ± 25 V

Drain current (continuous) at TC = 25 °C 21 A

Drain current (continuous) at TC = 100 °C 13 A

(1)

Drain current (pulsed) 84 A

Total dissipation at TC = 25 °C 160 W

(2)

Peak diode recovery voltage slope TBD V/ns

Storage temperature –55 to 150 °C

Max. operating junction temperature 150 °C

j

(BR)DSS

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 0.78 °C/W

Rthj-amb Thermal resistance junction-ambient max 50 °C/W

T

Maximum lead temperature for soldering

l

purpose

300 °C

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

I

AS

E

AS

Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)

Single pulse avalanche energy
(starting T

=25 °C, ID=IAS, VDD=50 V)

J

10 A

TBD mJ

3/10

Electrical characteristics STW27NM60ND

2 Electrical characteristics

(T

= 25 °C unless otherwise specified)

CASE

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

dv/dt

I

DSS

I

GSS

V

GS(th)

R

DS(on)

1. Characteristic value at turn off on inductive load

Drain-source
breakdown voltage

(1)

Drain source voltage slope

Zero gate voltage
drain current (V

Gate-body leakage
current (V

DS

= 0)

GS

= 0)

ID = 1 mA, VGS = 0 600 V

V

= 480 V, ID = 21 A,

DD

VGS = 10 V

V

= Max rating

DS

= Max rating, @125 °C

V

DS

48 V/ns

VGS = ± 20 V 100 nA

Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V

Static drain-source on
resistance

V

= 10 V, ID = 10.5 A 0.13 0.16 Ω

GS

1

100µAµA

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

g

fs

C

C

C

Forward transconductance VDS=15 V, ID = 10.5 A 17 S

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

= 50 V, f = 1 MHz,

V

DS

VGS = 0

TBD
TBD
TBD

pF
pF
pF

Equivalent output

C

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

2. C

(2)

oss eq.

Q
Q
Q

R

oss eq.

increases from 0 to 80% V

capacitance

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

Gate input resistance

g

is defined as a constant equivalent capacitance giving the same charging time as C

DS

4/10

= 0, VDS = 0 to 480 V TBD pF

V

GS

= 480 V, ID = 21 A,

V

DD

= 10 V,

V

GS

(see Figure 3)

TBD
TBD
TBD

f=1 MHz Gate DC Bias=0
Test signal level = 20 mV

1.6 Ω

open drain

when VDS

oss

nC
nC
nC

STW27NM60ND Electrical characteristics

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

t

t

Turn-on delay time
Rise time

r

Turn-off delay time
Fall time

f

= 300 V, ID = 10.5 A

V

DD

RG=4.7 Ω VGS = 10 V

(see Figure 2)

TBD
TBD
TBD
TBD

Table 8. Source drain diode

Symbol Parameter Test conditions Min Typ. Max Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

t

Q

I

RRM

1. Pulse width limited by safe operating area

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Source-drain current

(1)

Source-drain current (pulsed)

(2)

Forward on voltage ISD = 21 A, VGS = 0 1.3 V

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

ISD = 21 A, di/dt = 100 A/µs

= 60 V

V

DD

(see Figure 4)

ISD = 21 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C

(see Figure 4)

TBD
TBD
TBD

TBD
TBD
TBD

21
84

ns
ns
ns
ns

A
A

ns

µC

A

ns

µC

A

5/10

Test circuits STW27NM60ND

3 Test circuits

Figure 2. Switching times test circuit for

PW

resistive load

VD

VGS

RG

RL

D.U.T.

2200

µF

3.3
µF

AM01468v1

V

DD

Figure 4. Test circuit for inductive load

G

25

Ω

switching and diode recovery times

A

D

D.U. T.

S

B

G

R

A

FAST
DIODE

B

A

L=100µH

B

D

G

S

3.3

µF

1000

µF

V

DD

Figure 3. Gate charge test circuit

V

i=20V=VGMAX

PW

2200
µF

1kΩ

12V

IG=CONST

2.7kΩ

47kΩ

47kΩ

100Ω

100nF

D.U.T.

AM01469v1

Figure 5. Unclamped inductive load test

circuit

L

VD

ID

Vi

D.U. T.

2200

µF

3.3
µF

1kΩ

VDD

V

VDD

G

Pw

AM01470v1

Figure 6. Unclamped inductive waveform Figure 7. Switching time waveform

V(BR)DSS

VD

IDM

ID

VDD

VDD

AM01472v1

6/10

0

0

10%

tdon

ton

90%

tr

10%

tdoff

VDS

90%

V

GS

AM01471v1

toff

tf

90%

10%

AM01473v1

STW27NM60ND Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.

®

packages, depending on their level of environmental compliance. ECOPACK®

7/10

Package mechanical data STW27NM60ND

TO-247 Mechanical data

Dim.

Min. Typ Max.

A4.855.15

A1 2.20 2.60

b 1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c0.40 0.80

D19.85 20.15

E 15.45 15.75

e5.45

L 14.20 14.80

L1 3.70 4.30

L2 18.50

øP 3.55 3.65

øR 4.50 5.50

S 5.50

mm.

8/10

STW27NM60ND Revision history

5 Revision history

Table 9. Document revision history

Date Revision Changes

02-Mar-2009 1 First release

9/10

STW27NM60ND

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