Datasheet STW200NF03 Datasheet (SGS Thomson Microelectronics)

STW200NF03

N-CHANNEL 30V - 0.002 Ω - 120A TO-247

ULTRA LOW ON-RESISTANCE STripFET™ II MOSFET

TYPE

V

DSS

STW200NF03 30V <0.0028

■ TYPICAL R

■ 100% AVALANCHE TESTED

(on) = 0.002 Ω

DS

R

DS(on)

I

D

120A

Ω

DESCRIPTION

This Power MOSFET series realized with STMicroele c­tronics unique STripFET process has specifically been
designed to minimize input capacitance and gate charge.
It is particularl y suitable in OR-ing fun ction circuits and
synchronous rectification.

APPLICATIONS

■ HIGH-EFFICIENCY DC-DC CONVERTERS

■ HIGH CURRENT, HIGH SWITCHING SPEED

■ OR-ING FUNCTION

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

3

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

(

I

•)

D

I

D

(

I

••)

DM

P

tot

dv/dt

E

AS

T

stg

T

j

(

Pulse wi dth limited by safe operating ar ea.

••)

(

Current limited by package

•)

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

30 V
30 V

Gate- source Voltage ± 20 V

Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C

120 A

120 A
Drain Current (pulsed) 480 A
Total Dissipation at TC = 25°C

350 W
Derating Factor 2.33 W/°C

(1)

Peak Diode Recovery voltage slope 1.5 V/ns

(2)

Single Pulse Avalanche Energy 4 J
Storage Temperature
Operating Junction Temperature

≤120A, di/dt ≤200A/µs, VDD ≤ V

(1) I

SD

(2) Starting Tj = 25 oC, ID = 60 A, VDD= 15V

-55 to 175 °C

(BR)DSS

, Tj ≤ T

JMAX.

1/8October 2002

STW200NF03

THERMA L D ATA

Rthj-case

Rthj-amb

T

Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose

l

Max
Max

Typ

0.43
50

300

°C/W
°C/W

°C

ELECTRICAL CHARACTERISTICS (T

= 25 °C unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

V

(BR)DSS

Drain-source Breakdown

= 250 µA, VGS = 0

D

30 V

Voltage

V

= Max Rating

DS

V

= Max Rating TC = 125°C

DS

V

= ± 20V

GS

1

10

±100 nA

ON

(1)

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

= VGS I

DS

V

= 10 V ID = 60 A

GS

= 250 µA

D

234V

0.002 0.0028

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance
Reverse Transfer
Capacitance

V

= 15 V ID = 60 A

DS

= 25V, f = 1 MHz, VGS = 0

V

DS

200 S

10

3.35
385

µA
µA

Ω

nF
nF
pF

2/8

STW200NF03

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 15 V ID = 60 A

t

d(on)

Turn-on Delay Time

t

r

Rise Time

V

DD

R

= 4.7 Ω VGS = 10 V

G

(Resistive Load, Figure 3)

Q

g

Q

gs

Q

gd

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

=15V ID=120A VGS= 10 V

V

DD

(see test circuit, Figure 4)

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 15 V ID = 60 A

t

d(off)

Turn-off Delay Time

t

f

Fall Time

V

DD

R

= 4.7Ω, V

G

GS

= 10 V

(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulsed: P ul se duration = 300 µs, duty cycle 1. 5 %.

(

•)Pulse width limited by safe operating ar ea.

Source-drain Current

(•)

Source-drain Current (pulsed)

(*)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

I

= 120 A VGS = 0

SD

= 120 A di/dt = 100A/µs

I

SD

V

= 20 V Tj = 150°C

DD

(see test circuit, Figure 5)

50

300

210

63.5

63.5

100

80

90

250

5.5

280 nC

120
480

1.3 V

ns
ns

nC
nC

ns
ns

A
A

ns

nC

A

Thermal ImpedanceSafe Operating Area

3/8

STW200NF03

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

4/8

STW200NF03

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature.

. .

5/8

STW200NF03

Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Induc tive Wav eform

Fig. 3: Switching Times Test Circuits For Resistive

Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/8

TO-247 MECHANICAL DATA

STW200NF03

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 5.3 0.185 0.209

D 2.2 2.6 0.087 0.102

E 0.4 0.8 0.016 0.031

F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134

G 10.9 0.429
H 15.3 15.9 0.602 0.626

L 19.7 20.3 0.776 0.779

L3 14.2 14.8 0.559 0.582
L4 34.6 1.362
L5 5.5 0.217

M 2 3 0.079 0.118

mm inch

P025P

7/8

STW200NF03

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or patent right s of STMicroelectronics. Specifications menti oned in this p ublication are subje ct
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as criti cal component s in l i fe support devi ces or systems without express written appr oval of STMicroe l ectronics.

The ST logo is registered trademark of STMicroelectronics

2002 STMi croelectronics - All Rights Reserved



All other na m es are the property of their respective owners.

Australi a - Brazil - Cana da - China - Finland - France - Germ any - Hong Kong - I ndia - Israel - Ital y - Japan - Malaysia - Malta - Morocco -

Singap ore - Spain - Sweden - Switzerland - United Ki ngdom - United States.

STMicroelectronics GROUP OF COMPANIES

http:// www.st.com

8/8