Datasheet STW18NB40, STH18NB40FI Datasheet (SGS Thomson Microelectronics)

STW18NB40

®

STH18NB40FI

N-CHANNEL 400V - 0.19Ω - 18.4A TO-247/ISOWATT218

PowerMESH MOSFET

PRELIMINARY DATA

TYPE V

STW18NB40
STH18NB40FI

■ TYPICAL R

■ EXTREM E LY HIG H dv/ dt CAP ABILITY

■ 100% AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

DS(on)

DSS

400 V
400 V

= 0.19 Ω

DESCRIPTION

Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching char acteristics.

R

DS(on)

< 0.26 Ω
< 0.26 Ω

I

D

18.4 A

12.4A

3

2

1

1

TO-247 ISOWA TT218

INTER NAL SCH E M ATI C DIAG RA M

3

2

APPLICATIONS

■ HIGH CURRENT, HIGH SPE ED SWI TCHING

■ SWITC H MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVE RTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STW18NB40 STH18NB40FI

V

V

V

I

DM

P

dv/dt(

T

(•) Pulse width limited by safe operating area (1) ISD ≤18.4 A, di/dt ≤ 200 A/µs, VDD ≤ V

Drain-source Voltage (VGS = 0) 400 V

DS

Drain- gate Voltage (RGS = 20 kΩ)

DGR

Gate-source Voltage ± 30 V

GS

Drain Current (continuous) at Tc = 25 oC 18.4 12.4 A

I

D

I

Drain Current (continuous) at Tc = 100 oC 11.6 7.8 A

D

400 V

(•) Drain Current (pulsed) 73.6 73.6 A

Total Dissipation at Tc = 25 oC19080W

tot

Derating Factor 1.52 0.64 W/

1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns

Storage Temperature -65 to 150

stg

T

Max. Operating Junction Temperature 150

j

, Tj ≤ T

(BR)DSS

JMAX

o

C

o

C

o

C

June 1998

1/6

STW18NB40-ST H18NB40FI

THERMAL DATA

TO-247 ISOWATT218

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERI S TICS

Symbol Parameter Max Value Unit

I

AR

E

Thermal Resistance Junction-case Max 0.66 1.56
Thermal Resistance Junction-ambient Max

Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose

l

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pulse Avalanche Energy

AS

(starting T

= 25 oC, ID = IAR, V

j

ma x)

j

DD

= 50 V)

30

0.1

300

18.4 A

400 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

= 25 oC unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

I

= 250 µA V

D

GS

= 0

400 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

= Max Rating

V

DS

V

= Max Rating Tc = 125 oC

DS

V

= ± 30 V

GS

1

50

± 100 nA

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold

V

= VGS ID = 250 µA

DS

345V

Voltage

R

DS(on)

Static Drain-source On

VGS = 10V ID = 9.2 A 0.19 0.26 Ω

Resistance

I

D(on)

On State Drain Current VDS > I

V

= 10 V

GS

D(on)

x R

DS(on)max

18.4 A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (∗) Forward

Transconductance

C

C

C

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS > I

V

DS

x R

D(on)

DS(on)max

= 25 V f = 1 MHz V

ID = 9.2 A 6.8 9.3 S

= 0 2480

GS

435

47

3230

570

66

µA
µA

pF
pF
pF

2/6

STW18NB40-ST H18NB4 0FI

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING O N

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Time
Rise Time

V

= 200 V ID = 9.2A

DD

RG = 4.7 Ω VGS = 10 V

27
14

35
20

ns
ns

Q
Q
Q

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

V

= 320 V ID = 18.4 A V

DD

= 10 V 60

GS

16

28.3

84 nC

SWITCHING O F F

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

Off-voltage Rise Time
Fall Time

f

Cross-over Time

c

V

= 320 V ID = 18.4 A

DD

= 4.7 Ω VGS = 10 V

R

G

13
15
27

18
21
35

SOURCE DRAIN DIO DE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

18.4

73.6

I

SDM

I

SD

Source-drain Current

(•)

Source-drain Current
(pulsed)

V

(∗) Forward On Voltage ISD = 18.4 A VGS = 0 1.6 V

SD

t

Q

Reverse Recovery

rr

Time
Reverse Recovery

rr

I

= 18.4 A di/dt = 100 A/µs

SD

V

= 100 V Tj = 150 oC

DD

480

5.5

Charge

I

RRM

Reverse Recovery

23

Current

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

nC
nC

ns
ns
ns

A
A

ns

µC

A

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STW18NB40-STH18NB40FI

TO-247 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031

F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134

G 10.9 0.429

H 15.3 15.9 0.602 0.626

L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.413 0.582
L4 34.6 1.362
L5 5.5 0.217

M 2 3 0.079 0.118

Dia 3.55 3.65 0.140 0.144

mm inch

4/6

P025P

STW18NB40-STH18NB40FI

ISOWATT218 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 5.35 5.65 0.210 0.222
C 3.3 3.8 0.130 0.149
D 2.9 3.1 0.114 0.122

D1 1.88 2.08 0.074 0.081

E 0.75 1 0.029 0.039
F 1.05 1.25 0.041 0.049
G 10.8 11.2 0.425 0.441

H 15.8 16.2 0.622 0.637
L1 20.8 21.2 0.818 0.834
L2 19.1 19.9 0.752 0.783
L3 22.8 23.6 0.897 0.929
L4 40.5 42.5 1.594 1.673
L5 4.85 5.25 0.190 0.206
L6 20.25 20.75 0.797 0.817

M 3.5 3.7 0.137 0.145
N 2.1 2.3 0.082 0.090
U4.6 0.181

mm inch

L3

N

E

A

D

C

L5

L2

L6

D1

F

M

U

H

G

123

L1

L4

P025C

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STW18NB40-ST H18NB40F I

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of use of such information n or for any infrin gement of patents or othe r rights of third parties which may result from its use. No licens e i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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