Page 1
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
DSS
STW16NA60 600 V < 0.4 Ω 16 A
R
DS(on)
I
D
STW16NA60
PRELIMINARY DATA
■ TYPICAL R
■ ± 30V GATE TO SOURCE VOLTA GE
DS(on)
= 0.33 Ω
RANTING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVA LANCHE DATA AT 100
■ LOW INTRINSIC CAPACITANCE
■ GATE CHARGE MINIMIZED
■ REDUCED VOLTAGE SPRE AD
o
C
APPLICATIONS
■ HIGH CURRENT, HIGH SPE ED SWI TCHING
■ SWITCH MODE POWER SUPPLY (SMPS)
■ CONSUMER AND INDU STRI AL LIG HT ING
■ DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SU PP LY (UP S)
3
2
1
TO-247
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
T
(•) Pulse width limited by safe operating area
January 1998
This is preliminary information on a new product now in development or undergoing evaluation.Details are subject to change without notice.
Drain-source Voltage (VGS = 0) 600 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC16A
D
I
Drain Current (continuous) at Tc = 100 oC10A
D
600 V
(•) Drain Current (pulsed) 64 A
Total Dissipation at Tc = 25 oC 250 W
tot
Derating Factor 2 W/oC
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
1/5
Page 2
STW16NA60
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-si n k
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
E
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
Repetitive Avalanche Energy
AR
= 25 oC, ID = IAR, V
j
(pulse width limited by T
ma x, δ < 1%)
j
DD
ma x, δ < 1%)
j
Avalanche Current, Repetitive or Not-Repetitive
= 100 oC, pulse width limited by Tj max, δ < 1%)
(T
c
= 25 V)
0.5
30
0.1
300
16 A
1000 mJ
80 mJ
10 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
600 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating x 0.8 Tc = 100 oC
DS
V
= ± 30 V
GS
25
250
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
2.25 3 3.75 V
Voltage
R
DS(on)
I
D(on)
Static Drain-source On
Resistance
VGS = 10 V ID = 8 A
V
= 10 V ID = 8 A Tc = 100oC
GS
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
0.33 0.4
0.8
16 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗) Forward
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 8 A 10 15 S
= 0 3700
GS
450
140
µA
µA
Ω
Ω
pF
pF
pF
2/5
Page 3
STW16NA60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING O N
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
SWITCHING O F F
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
SOURCE DRAIN DIO DE
Turn-on Time
Rise Time
t
r
Turn-on Current Slope V
on
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
Off-voltage Rise Time
Fall Time
t
f
Cross-over Time
c
V
= 300 V ID = 8 A
DD
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 3)
= 480 V ID = 16 A
DD
= 47 Ω VGS = 10 V
R
G
(see test circuit, figure 5)
VDD = 480 V ID = 16 A V
V
= 480 V ID = 16 A
DD
= 4.7 Ω VGS = 10 V
R
G
= 10 V 155
GS
(see test circuit, figure 5)
25
21
30
25
240 A/µs
200 nC
18
78
45
20
66
50
25
80
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
16
64
I
SDM
I
SD
Source-drain Current
(•)
Source-drain Current
(pulsed)
V
(∗) Forward On Voltage ISD = 16 A VGS = 0 1.6 V
SD
t
Q
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 16 A di/dt = 100 A/µs
SD
V
= 100 V Tj = 150 oC
DD
(see test circuit, figure 5)
770
17
Charge
I
RRM
Reverse Recovery
45
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
A
A
ns
µC
A
3/5
Page 4
STW16NA60
TO-247 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.413 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
Dia 3.55 3.65 0.140 0.144
mm inch
4/5
P025P
Page 5
STW16NA60
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of pat e nts or ot her rights o f third partie s which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SG S-THOMSON Microelectroni cs. Specifications ment ioned
in this publication are subject to cha nge wi t hout n o tice. This p u bli ca t ion sup e rsed e s and r epla ces al l inf ormat i on pr ev io us ly supplied.
SGS-THOMSON Microelectronics products are not auth orized for use as critical components in life support devices or systems without express
written approval of SGS-THOM SO N M icroelecto nics.
© 1997 SGS-THOMSON Microelectronics - Printed in Ita ly - All Right s Rese rved
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
5/5
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