Datasheet STV40NE03L-20 Datasheet (SGS Thomson Microelectronics)

STV40NE03L-20

N - CHANNEL 30V - 0.014Ω - 40A - PowerSO-10

STripFET MOSFET

TYPE V

DSS

R

DS(on)

I

D

ST V40NE03L-20 30 V < 0.020 Ω 40 A

■ TYPICALR

■ EXCEPTIONAL dv/dt CAPABILITY

■ LOW GATE CHARGE A 100

■ APPLICATIONORIENTED

DS(on)

= 0.014 Ω

o

C

CHARACTERIZATION

DESCRIPTION

This PowerMOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.

APPLICATIONS

■ HIGHCURRENT, HIGH SPEEDSWITCHING

■ SOLENOIDAND RELAYDRIVERS

■ MOTORCONTROL, AUDIOAMPLIFIERS

■ DC-DC& DC-ACCONVERTERSIN HIGH

PERFORMANCE VRMs

■ AUTOMOTIVE ENVIRONMENT(INJECTION,

ABS, AIR-BAG, LAMPDRIVERS,Etc.)

10

1

PowerSO-10

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t

V

V

V

I

DM

P

dv/ dt (

T

(•) Pulse width limited by safe operating area (1)ISD≤ 40 A, di/dt ≤300 A/µs, VDD≤ V

May 2000

Drain-source Voltage (VGS=0) 30 V

DS

Drain- g at e V olt age (RGS=20kΩ)30V

DGR

Gate-source Voltage

GS

I

Drain Cur rent (c ont in uous ) at Tc=25oC40A

D

I

Drain Cur rent (c ont in uous ) at Tc=100oC28A

D

20 V

±

(•) Drain Current (pulsed) 160 A

Total Dissipation at Tc=25oC80W

tot

Derat ing F ac tor 0.53 W/

1 ) Peak Diode Recovery voltage slope 7 V / ns

Sto rage Temperatur e -65 to 175

stg

T

Max. Operating J unction Temper at ur e 175

j

(BR)DSS,Tj≤TJMAX

o

C

o

C

o

C

1/8

STV40NE03L-20

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Temperatu r e For Soldering Purpose

l

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pul se Avalanche Ener gy

AS

(starting T

=25oC, ID=IAR,VDD=15V)

j

max,δ <1%)

j

1.88

62.5

0.5

300

40 A

200 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

= -40to 150oC unlessotherwisespecified)

(T

J

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Drain-source
Break dow n Vo lt age

Zero Gate Voltage
Drain Curre nt (V

GS

Gat e- bod y Leakag e
Current (V

DS

=0)

ID=250µAVGS=0 Tc=25oC

=250µAVGS=0

I

D

V

=MaxRating Tc=25oC

=0)

DS

=MaxRating

V

DS

= ± 20 V ± 100 nA

V

GS

30
27

1

50

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID= 250 µ ATc=25oC

V

DS=VGSID

Sta t ic Drain-s our c e On
Resistance

VGS=10V ID=20A Tc=25oC

=5V ID=20A Tc=25oC

V

GS

V

=10V ID=20A

GS

=5V ID=20A

V

GS

On State Drain Current VDS>I

D(on)xRDS(on )max

= 250 µ A

1

0.6

1.8 2.5

3.0

0.014 0. 0 2

0.023

0.04

0.046

20 A

VGS=10V

DYNAMIC

V

µA
µ

V
V

Ω
Ω
Ω
Ω

A

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

VDS>I

D(on)xRDS(on )maxID

=20A 10 S

Tr ansc on duc tance

C

C
C

Input Capaci t ance

iss

Out put Capac itance

oss

Reverse Transfer

rss

VDS=25V f=1MHz VGS= 0 1850

450
160

2400

590
210

Capacit a nc e

2/8

pF
pF
pF

STV40NE03L-20

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

Turn-on Time
Rise Time

t

r

Tot al Gate Charge

g

Gat e- Source Char g e

gs

Gate-Drain Charge

gd

VDD=15V ID=20A
R

G

=4.7

Ω

VGS=5V

25

16033210

VDD=24V ID=40A VGS=5V 29

12
14

38 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

Off-volt age Rise Time
Fall T ime

f

Cross-over Tim e

c

VDD=24V ID=40A
R

G

=4.7

Ω

VGS=5V

25
120
155

33
160
210

SOURCEDRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area

Source-drain Current

(•)

Source-drain Current

40
160

(pulsed)

(∗)ForwardOnVoltage ISD=40A VGS=0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 40 A di/dt = 100 A/µs

=20V Tj= 150oC

V

DD

50

0.9
Charge
Reverse Recovery

3.5
Current

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µ

A

C

SafeOperating Area ThermalImpedance

3/8

STV40NE03L-20

OutputCharacteristics

Transconductance

TransferCharacteristics

Static Drain-sourceOn Resistance

Gate Charge vs Gate-sourceVoltage

4/8

CapacitanceVariations

STV40NE03L-20

NormalizedGate ThresholdVoltage vs
Temperature

Source-drainDiode Forward Characteristics

NormalizedOn Resistancevs Temperature

5/8

STV40NE03L-20

Fig. 1:

UnclampedInductiveLoad TestCircuit

Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad

Fig. 2:

UnclampedInductiveWaveform

Fig. 4: Gate Charge test Circuit

Fig. 5:

Test Circuit For InductiveLoad Switching

And Diode Recovery Times

6/8

PowerSO-10 MECHANICAL DATA

STV40NE03L-20

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 3.35 3.65 0.132 0.144

A1 0.00 0.10 0.000 0.004

B 0.40 0.60 0.016 0.024

c 0.35 0.55 0.013 0.022

D 9.40 9.60 0.370 0.378

D1 7.40 7.60 0.291 0.300

E 9.30 9.50 0.366 0.374
E1 7.20 7.40 0.283 0.291
E2 7.20 7.60 0.283 0.300
E3 6.10 6.35 0.240 0.250
E4 5.90 6.10 0.232 0.240

e 1.27 0.050

F 1.25 1.35 0.049 0.053

H 13.80 14.40 0.543 0.567

h 0.50 0.002

L 1.20 1.80 0.047 0.071

q 1.70 0.067

α 0

o

o

8

==

==

HE

h

A

F

A1

610

51

eB

M

0.25

D

==

D1

==

DETAIL”A”

E2

==

DETAIL”A”

Q

B

0.10 A

E1E3

==

SEATING

PLANE

A

C

α

B

E4

==

SEATING

PLANE

A1

L

==

0068039-C

7/8

STV40NE03L-20

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subject to change withoutnotice. Thispublication supersedes and replaces allinformation previously supplied. STMicroelectronics products
are not authorized for use as critical components inlife support devices or systems without express written approval ofSTMicroelectronics.

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