Datasheet STV3012 Datasheet (SGS Thomson Microelectronics)

FOR AUDIO AND VIDEO A PPLICATIONS

.

TWO TIMING AND DATA FORMAT MODES

.

7 SUB-SYSTEM ADDR ESSES

.

UP TO 64 COMMANDS PER SUB-SYSTEM
ADDRESS

.

KEY RELEASE DETECTION BY TOGGLE BIT
(1 toggle bit in mode A and 2 toggle bits in
mode B)

.

HIGH CURRENT RE MO T E OUTPUT
AT V

.

VERY LOW STA ND-B Y CU RRENT (< 2µA)

.

1mA OPERATIONAL CURRENT AT 6V SUP­PLY

.

CERAMIC RESONATOR CONTROLLED
FREQUENCY (typ. 450kHz)

.

MODULATED TRANSMISSION

.

SUPPLY VOLTA G E RANGE 2V TO 6.5V

.

LOW NUMBER OF EXTERNAL COMPO­NENTS

= 3V (-IOH = 80mA)

DD

STV3012

REMOTE CONT R OL TRANSMITTER

PRELIMINARY DATA

DIP20

(Plastic Package)

ORDER CODE : STV3012

PIN CONNECTIONS

REMO

SEN6N
SEN5N

SEN4N
SEN3N
SEN2N

DESCRIPTION

The STV3012 is a general purpose infrared rem ote
control transmitter system for low voltage supply
applications. It is able to generate a total number
of 448 commands which are divided into 7 sub-sys ­tem groups with 64 commands each. The sub-sys­tem code may be selected by a press button, a
slider switch or hard wired. T wo different timing and
data format modes are available.

March 1993

This is advance information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

SEN1N
SEN0N

ADRM

V

1
2
3
4
5
6
7
8
9
10

SS

V

20
19
18
17
16
15
14
13
12
11

DD

DRV6N
DRV5N

DRV 4N
DRV 3N
DRV 2N

DRV1N
DRV0N
OSCO

OSCI

3012-01.EPS

1/8

STV3012

BLOCK DIAG RAM

OSCO

OSCI

SEN6N
SEN5N
SEN4N
SEN3N
SEN2N
SEN1N
SEN0N

REMO

12

OSCILLATOR

2
3
4
5
6
7
8

1

ENCODER

KEYBOARD

REMOTE

DIVIDER

LATCHES

ADDRESS

PARALLEL

/SERIAL

CONVERTER

MASTER

CLEAR

SYST.

CONTR

DRIVER

KEYBOARD

DECODER

20
1011

9

19
18
17
16
15
14
13

V

DD

V

SS

ADRM

DRV6N
DRV5N
DRV4N
DRV3N
DRV2N
DRV1N
DRV0N

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

- I

V

DD

V

V

O

± I

(REMO)

P

tot

T

stg

T

oper

Supply Voltage - 0.3, 7.0 V
Input Voltage - 0.3, VDD + 0.3 V

I

Output Voltage - 0.3, VDD + 0.3 V
D.C. Current into any input or output 10 mA
Peak REMO Output Current during 10µs, duty factor = 1%
Power Dissipation per package for T

= - 20 to + 70oC 200 mW

amb

300 mA

Storage Temperature - 55, + 125
Operating Ambient Temperature -20, + 70

3012-02.EPS

o

C

o

C

3012-01.TBL

ELECTRICAL CHARACTERISTICS

V

= 0V, TA = 25oC (unless otherwise specified)

SS

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

I

f

OSC

KEYBOARD MATRIX - Inputs SEN0N to SEN6N

V
V

- I

KEYBOARD MATRIX - Outputs DRV0N to DRV6N

V

2/8

Supply Voltage TA = 0 to + 70oC26.5V

DD

Supply Current • Active f

DD

REMO Output unload VDD = 6V

• Inactive (stand-by mode) V

= 455kHz VDD = 3V

OSC

0.25

1.0

= 6V 2

DD

0.5
2

Oscill. Frequency VDD = 2 to 6.5V (ceramic resonator) 350 600 kHz

Input Voltage Low VDD = 2 to 6.5V 0.3 x V

IL

Input Voltage High VDD = 2 to 6.5V 0.7 x V

IH

Input Current VDD = 2V, VI = 0V

I

Input Leakage Current VDD = 6.5V, VI = V

I

I

Output Voltage "ON" VDD = 2V, IO = 0.1mA

OL

I

Output Current "OFF" VDD = 6.5V, VO = 6.5V 10

O

= 6.5V, VI = 0V

V

DD

DD

VDD = 6.5V, IO = 1.0mA

DD

10

100

DD

100
600

1

0.3

0.6

mA
mA

µA

V
V

µA
µA

µA

V
V

µA

3012-02.TBL

STV3012

ELECTRICAL CHARACTERISTICS

T

= 25oC, unless otherwise specified

amb

Symbol Parameter Test Conditions Min. Typ. Max. Unit

CONTROL INPUT ADRM

Input Voltage Low 0.3 x V

V

IL

V

Input Voltage High 0.7 x V

IH

I

Input Current Low

IL

(switched P and N
channel pull-up/pull down)

I

Input Current High

IH

(switched P and N
channel pull-up/pull down)

DATA OUTPUT REMO

- I

OSCILLATOR

V
V

Output Current High VDD = 2.5V, VOH = 0.8V, TA = 70oC

OH

I

Output Current Low VDD = 2V, VOL = 0.4V

OL

t

Pulse Length VDD = 6.5V, Oscill. Stopped 1 msec

OH

Input Current OSCI at V

I

I

Output Voltage high VDD = 6.5V, - IOH = 0.1mA VDD - 0.8 V

OH

Output Voltage Low VDD = 6.5V, IOL = 0.1mA 0.7 V

OL

Pull-up Act. Oper. Condition, VIN = V

Pull-down Act. Stand-by Cond.,VIN = V

VDD = 2.5V, VOH = 0.8V, TA = 25oC
V

DD

VDD = 6.5V, VOL = 0.4V

VDD = 2V
VDD = 6.5V

VDD = 2V
VDD = 6.5V

= 6.5V, VOH = 5V

DD

VDD = 2V

= 6.5V 5

V

DD

SS

DD

DD

-10

-100

10

100

70
80
80

0.6

0.6

DD

-100

-600

100
600

5
7

V
V

µA
µA

µA
µA

mA
mA
mA

mA
mA

µA
µA

3012-03.TBL

I - INPUTS AND OUTP UT S
I.1 - Key Matrix Inputs and Outp uts (DRV 0N to

DRV6N and SEN0N to SEN6N)
The transmitter k eyboard is arranged as a scanned

matrix. The matrix consists of 7 driver ouputs a nd
7 sense inputs. The driver outputs DRV0N to
DRV6N are open drain N-channel transistors and
they are conductive in the stand-by mode. The 7
sense inputs (SEN0N to SEN6N) enable the gen­eration of 56 command codes. With 2 external
diodes all 64 commands are addressable. The
sense inputs have P-channel pull- up transistors so
that they are HIGH until they are pulled LOW by
connecting them to an output via a key depression
to initiate a code transmission. The cod es for the
selected key are given in Table 1.

I.2 - Address Mode Input (ADRM)
The sub-system address and the transmission

mode are defined by connecting the ADRM input
to one or more driver outputs (DRV0N to DRV6N)
of the key matrix. If more than one driver is con­nected to ADRM, they must be decoupled by di­odes. This allows the definition of seven
sub-system address es as shown in Table 2.

The ADRM input has switched pull-up and pull­down loads. In the stand-by mode only the pull-

down device is active. Whether ADRM is open
(sub-system address 0) or connected to the driver
outputs, this input is LOW and will not cause un­wanted dissipation. W hen the transmitter becomes
active by pressing a key, the pull-down device is
switched-off and the Pull-up device is switched-on,
so that the applied driver signals are sensed for the
decoding of the sub-syst em address and the mode
of transmission.
The arrangement of the sub-system address cod­ing is such that only the driver DRVnN with the
highest number (n) defines the sub-system ad­dress, e.g. in mode B, if drivers DRV 2N and DRV4N
are connected to ADRM, only DRV4N will define
the sub-system addre ss. This option can be used
in systems requiring more than one sub-system
address. The transmitt er may be hard-wir e for sub­system address 2 by connecting DRV1N to ADRM.
If now DRV3N is added to ADRM by a key or a
switch, the transmitted sub-system address
changes to 4. A change of the sub-system will not
start a transmission.

I.3 - Remote Control Signal Output (REMO)
The REMO signal output stage is a push-pull type.

In the HIGH state, a bipolar emitter-follower allows
a high output current. The timing of the data output
format is listed in Figures 1 and 2.

3/8

STV3012

The information is defined by the first edge of the
modulated pulses. During mode A, the data word
starts with the four bits for defining the sub-system
address S3, S2, S1 and S0, followed by the toggle
bit T0, and seven bits G, F, E, D, C, B and A, which
are defined by the selected key. During mode B,
the data word starts with the Toggle bit s T1 and T0,
followed by three bits for defining the sub-system
address S2, S1 and S0, and six bits F, E, D, C, B
and A which are defined by the selected key.

Table 1 : Key Codes

Matrix

Drive

DRV0N
DRV1N
DRV2N
DRV3N
DRV4N
DRV5N
DRV6N
V

SS

DRV0N to V
DRV0N to V
DRV0N to V
DRV0N to V
DRV0N to V
DRV0N to V
DRV0N to V

* The C, B and A codes are identical to SEN0N as given above.
** Bit position G only available in mode A.

SS
SS
SS
SS
SS
SS
SS

Matrix
Sense

SEN0N
SEN0N
SEN0N
SEN0N
SEN0N
SEN0N
SEN0N
SEN0N

G**FEDCBA

0
0
0
0
0
0
0

0
SEN1N 0 0 0 1 * 8 to 15
SEN2N 0 0 1 0 * 16 to 23
SEN3N 0 0 1 1 * 24 to 31
SEN4N 0 1 0 0 * 32 to 39
SEN5N 0 1 0 1 * 40 to 47
SEN6N 0 1 1 0 * 48 to 55

SEN5N and SEN6N 0 1 1 1 * 56 to 63

The toggle bits function as an indication for the
decoder that the next instruction has t o be consi d­ered as a new com mand.

The REMO output is protected against "lock-up",
i.e. the length of an output pulse is limited to
< 1msec, even if the oscillator stops during an
output pulse. This avoids the rapid discharge of the
battery that would otherwise be caused by the
continuous activation of the LED.

Code

0

0

0

0

0

0

0

0

0

0

0

0

0

0

0

0

0

0

0

0

0

0

0

0

0

0

1

0

1

0

1

0

1

0

0

1

1

0

1

1

0

0

0

1

1

0

1

1

Matrix

Position

0
1
2
3
4
5
6
7

3012-05.TBL

Table 2 : Transmission Mode and S ub-sy stem A ddress Selection

Mode Sub-system Address Driver DRVnN for n =

#S3S2S1S00123456

M
O

D
E

A

M
O

D
E

B

O = connected to ADRM
blank = not connected to ADRM
X = don’t care
The sub-system address and the transmission mode are defined by connecting the ADRM input to one or more driver outputs (DRV0N to
DRV6N) of the key matrix. If more than one driver is connected to ADRM, they must be decoupled by diodes.

00000
10010XXXXXO
20110XXXXO
30001XXXO
40101XXO
50011XO
60111O
0111 O
1000O O
2001XO O
3010XXO O
4 011XXXO O
5 100XXXXO O
6 101XXXXXOO

3012-04.TBL

4/8

STV3012

Figure 1 : Data Format of REMO ; T0 and T1 = toggle bits ; S0, S1, S2 and S3 = sub-system address ;

A, B, C, D, E, F and G = command bits

MODE A

H

REMO

L

bit
data

MODE B

REMO

bit
data

S30S2

11

H
L

T0

T1

0

S0

S1

0

S20S1

11

Bit Separation (tB) Mode A Mode B
Logic "0" 1 x t
Logic "1" 2 x t
Toggle bit time 1 x t0 or 2 x t

Figure 2 : Pulse Train Timing (ref. to f

t

(bit duration)

B

t

PW

t

M

t

t

MH

ML

T0 F

G
1

0

1

= 400kHz)

OSC

t

w

0E0D1C0B0

t

w

B

C

D

ES00F

1

0

0

0
0

0

A
00

A

1

2 x t
3 x t

2 x t0 or 3 x t

S3

T0

3012-03.EPS

0
0

0

1st bit 2nd bit last bit

tW(word distance)

Mode t0 (ms)

(µs) tMH (µs) tML (µs)

t

M

t

A 2.52 30 10 20 86.04
B 2.88 30 10 20 138

Mode A and B

t

OSC

t
t

t

ML

MH

2.5µs

M

12 x t

8 x t
4 x t

OSC
OSC
OSC

oscillation period

modulation period

modulation period LOW

modulation period HIGH

Mode A

t

PW

t

t

0

W

(15 x tM) + t

1008 x t

OSC

34416 x t

MH

OSC

modulated pulse

basic unit of pulse distance

word distance

Mode B

t

PW

t

t

0

W

(11 x tM) + t

1152 x t

OSC

55296 x t

MH

OSC

modulated pulse

basic unit of pulse distance

word distance

(ms)

W

3012-04.EPS

5/8

STV3012

I.4 - Oscillator Input and Output

The external components must be connected to
these pins when using an oscillator with a c eramic
resonator. The oscillator frequency may vary be­tween 350kHz and 600kHz as defined by the reso­nator . No external feedback resist or is allowed.

II - FUNCTIONAL DESCRIPTION

Key operation (see Figure 3) :
In the stand-by mode all drivers (DRV0N to
DRV6N) are on (low impedance to V

). Whenever

SS

a key is pressed, one or more of the sense inputs
(SENnN) are tied to ground. This will start the
power-up sequence. First the oscillator is activat ed
and after the debounce time t

the output drivers

DB

(DRV0N to DRV6N) becom e active suc ces sively.
Within the firs t scan c ycle, the trans miss ion mode,
the applied sub-system addre ss and the selected
command code are sensed and loaded into an
internal data latch.

In contrast to the command code, the sub-system
is sensed only within the first scan cycle. If the
applied sub-system address is changed while the
Command key is pr essed, the trans mitted s ub-sys­tem address is not altered.
In a multiple key stroke sequence the command
code is always altered in accordance with the
sensed key.

III - OUTPUT SEQUENCE (DATA FORMAT)
The output operation will start when the selected

code is found. A burst of pulses, including the
latched address and command codes, is generated
at the output REMO as lon g as a key is pressed.
The operation is terminated by releasing the key or
if more than one key is pressed at the same time.
Once a sequence is started, the transmitted data
words will always be completed after the key is
released.
The toggle bits T1 and T0, during mode A only T0,
toggle if the key is released for a minimum time
t

. The toggle bits remain unchanged within a

REL

multiple key-stroke sequence.

IV - MULTIPLE KEY-STROKE PROTECTION

The keyboard is protected against multiple key­strokes (Figure 4). If more than one key is pressed
at the same time, the circuit will not generate a ne w
output at REMO. In case of a multiple key-stroke,
the scan repetition rate is increased to detect the
release of a key as soon as possible.
There are two restrictions caused by the special
structure of the keyboard matrix : the keys switch­ing to ground (code numbers 7, 15, 23, 31, 39, 47,
55 and 63) and the keys connected to SEN5N and
SEN6N are not covered completely by the multiple
key protection. If one sense input is switched to
ground, further keys on the same sense line are
ignored, i.e. the command code corresponding to
"key to ground" is transmitted. SEN5N and SEN6 N
are not protected against multiple keystroke on the
same driver line, because this condition has been
used for the definition of additional codes (code
number 56 to 63).

Figure 3 : Single Key-stroke Sequence. Debounce time : tDB = 4 to 9 x t0,

REV

DRVnN

REMO

OSCO

6/8

closed
released

off
on

H
L

H
L

Start time : t

key bouncing

scan

t

DB

t

= 5 to 10 x t0, Minimum release time : t

ST

scan scan

t

W

ST

OSCILLATOR ACTIVE

REL

= t0.

t

REL

new key

new word

3012-05.EPS

Figure 4 : Multiple Key-stroke Sequence. Scan rate multiple key-strok e : tSM = 8 to 10 x t0.

STV3012

key bouncing

closed

KEY A

released

closed

KEY B

released

scan scan scan

off

DRVnN

on

t

DB

H

REMO

OSCO

L

t

ST

H
L

word key A word key A

TYPICAL APPL ICATION

key A decoded as HIGH

key A decoded as LOW

tt

t

W

SM

DB

t

ST

word key B

OSCILLATOR ACTIVE

3012-06.EPS

SEN0N

SEN1N

SEN2N
SEN3N

SEN4N

SEN5N

SEN6N

ADRM

DRV0N

13 14 15 16 17

8

7

6

5

4

3
2

9

10

V

SS

DRV2N

DRV1N

STV3012

11 12

OSCI OSCO

DRV3N

DRV5N

18 19

DRV6N

V

DD

20

REMO

1

3012-07.EPS

DRV4N

7/8

STV3012

PACKAGE MECHANICAL DATA

20 PINS - PLASTIC DIP

I

a1

L

Z

e3

b

B

e

E

Z

D

20 11

F

110

Dimensions

Min. Typ. Max. Min. Typ. Max.

a1 0.254 0.010

B 1.39 1.65 0.055 0.065

b 0.45 0.018

b1 0.25 0.010

D 25.4 1.000
E 8.5 0.335

e 2.54 0.100

e3 22.86 0.900

F 7.1 0.280

i 3.93 0.155
L 3.3 0.130
Z 1.34 0.053

Millimeters Inches

b1

PM-DIP20.EPS

DIP20.TBL

Information furnished i s believed to be accurate and rel iabl e. However, S GS-THOMSON Microel ectroni cs assumes no responsibil ity
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No licence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.

© 1994 SGS-THOMSON Microelectronics - All Rights Reserved

2

Purchase of I

2

C Patent. Rights to use these components in a I2C system, is granted provided that the system conforms to

I

Australia - Brazil - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco

The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.

C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips

2

C Standard Specifications as defined by Philips.

the I

SGS-THOMSON Microelectronics GROUP OF COMPANIES

8/8