Datasheet stv270n4f3 Datasheet

N-channel 40 V, 1.25 mΩ, 270 A, PowerSO-10

Features

R

Type V

DSS

STV270N4F3 40 V < 1.5 mΩ 270 A

1. Current limited by package

■ Conduction losses reduced

■ Low profile, very low parasitic inductance

Applications

DS(on)

max

STV270N4F3

STripFET™ III Power MOSFET

(1)

I

D

10

1

PowerSO-10

■ Switching application

Description

This STripFET™ III Power MOSFET technology
is among the latest improvements, which have
been especially tailored to minimize on-state
resistance providing superior switching
performances.

Table 1. Device summary

Order code Marking Package Packaging

Figure 1. Internal schematic diagram and

connection diagram (top view)

STV270N4F3 270N4F3 PowerSO-10 Tape and reel

June 2009 Doc ID 14089 Rev 6 1/12

www.st.com

12

Contents STV270N4F3

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

2/12 Doc ID 14089 Rev 6

STV270N4F3 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

P

V

V

I

I

DM

TOT

D

Drain-source voltage (vGS = 0) 40 V

DS

Gate-source voltage ± 20 V

GS

(1)

Drain current (continuous) at TC = 25 °C 270 A

I

Drain current (continuous) at TC = 100 °C 220 A

D

(1)

Drain current (pulsed) 1080 A

(2)

Total dissipation at TC = 25 °C 300 W

Derating factor 2 W/°C

(3)

EAS

T

Single pulse avalanche energy 1000 mJ

Storage temperature

stg

Operating junction temperature

T

j

-55 to 175 °C

1. Current limited by package

2. This value is rated according to Rthj-c

3. Starting Tj = 25 °C, ID = 80 A, VDD = 32 V

Table 3. Thermal data

Symbol Parameter Value Unit

R

thj-case

R

thj-pcb

1. When mounted on 1 inch2 FR-4 2 oz Cu.

Thermal resistance junction-case max 0.5 °C/W

(1)

Thermal resistance junction-pcb max 35 °C/W

Doc ID 14089 Rev 6 3/12

Electrical characteristics STV270N4F3

2 Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source
breakdown voltage

Zero gate voltage
drain current (VGS = 0)

Gate body leakage
current (V

DS

= 0)

= 250 µA, VGS= 0 40 V

I

D

= Max rating,

V

DS

= Max rating, Tc=125 °C

V

DS

= ± 20 V ±200 nA

V

DS

10

100µAµA

Gate threshold voltage VDS= VGS, ID = 250 µA 2 4 V

Static drain-source on
resistance

= 10 V, ID= 80 A 1.25 1.5 mΩ

V

GS

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Forward

(1)

g

fs

C

C

oss

C

Q
Q
Q

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

transconductance

Input capacitance

iss

Output capacitance
Reverse transfer

rss

capacitance

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

= 10 V, ID= 100 A - 200 S

V

DS

7500

= 25 V, f = 1 MHz, VGS =0 -

V

DS

1900

50

VDD= 20 V, ID= 160 A,

= 10 V

V

GS

Figure 14

110

-

30
25

150 nC

pF
pF
pF

nC
nC

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

4/12 Doc ID 14089 Rev 6

Turn-on delay time

t

Rise time

r

Turn-off delay time

t

Fall time

f

V

= 20 V, ID = 80 A

DD

RG= 4.7 Ω, VGS= 10 V

Figure 13

V

= 20 V, ID = 80 A

DD

= 4.7 Ω, VGS= 10 V,

R

G

Figure 13

25

­180

110

-

45

ns

­ns

ns

­ns

STV270N4F3 Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

V

I

SD

SD

Q

I

RRM

Source-drain current

SD

(1)

Source-drain current (pulsed)

(2)

Forward on voltage ISD = 80 A, VGS = 0 - 1.3 V

Reverse recovery time

t

rr

Reverse recovery charge

rr

Reverse recovery current

I

SD

V

DD

Figure 15

1. Pulse width limited by safe operating area

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

= 160 A,di/dt = 100 A/µs

= 32 V, Tj = 150 °C

-

-70225

3.2

270

1080AA

ns

nC

A

Doc ID 14089 Rev 6 5/12

Electrical characteristics STV270N4F3

2.1 Electrical characteristics

Figure 2. Safe operating area Figure 3. Thermal impedance

I

D

10

10

(A)

3

2

Operation in this area is

limited by Max Rds(on)

Tj=175°C

Tc=25°C
Single pulse

AM01500v1

100µs

1ms

1

10

0

10

-1

10

-1 0

10

10

10

1

10ms

V

DS

(V)

Figure 4. Output characteristics Figure 5. Transfer characteristics

I

D

(A)

450

VGS=10V

400

350

300

250

200

150

100

50

0

0

2

4

6

5V

4V

AM01502v1

V

DS

(V)

I

D

(A)

450

400

350

300

250

200

150

100

50

VDS=5V

C

T

0

0

2

4

6

=25°C

8

AM01503v1

V

GS

(V)

Figure 6. Static drain-source on resistance Figure 7. Normalized B

R

DS(on)

(mΩ)

1.40

V

T

GS ≥

C

=25°C

10V

1.30

1.20

1.10

1.00
0

20

40

60

6/12 Doc ID 14089 Rev 6

80

AM01501v1

D

(A)

I

vs temperature

VDSS

STV270N4F3 Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage

vs temperature

Figure 12. Source-drain diode forward

V

characteristics

SD

(V)

0.95

0.90

0.85

0.80

0.75

0.70

0.65

0.60

0.55

0.50

0.45

0.40
0

20

TJ=-50°C

60

40

80

TJ=25°C

100

120

J

=175°C

T

140

160

180

AM04229v1

I

SD

(A)

Figure 11. Normalized on resistance vs

temperature

Doc ID 14089 Rev 6 7/12

Test circuits STV270N4F3

3 Test circuits

Figure 13. Switching times test circuit for

PW

resistive load

VD

VGS

RG

RL

D.U.T.

2200

µF

3.3
µF

AM01468v1

V

DD

Figure 15. Test circuit for inductive load

G

25

Ω

switching and diode recovery times

A

D

D.U. T.

S

B

R

FAST
DIODE

G

A

A

L=100µH

B

B

D

G

S

3.3

µF

1000

µF

V

DD

Figure 14. Gate charge test circuit

V

i=20V=VGMAX

PW

2200
µF

1kΩ

12V

IG=CONST

2.7kΩ

47kΩ

47kΩ

100Ω

100nF

D.U.T.

AM01469v1

Figure 16. Unclamped inductive load test

circuit

L

VD

ID

Vi

D.U. T.

2200

µF

3.3
µF

1kΩ

VDD

V

VDD

G

Pw

AM01470v1

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

V(BR)DSS

VD

IDM

ID

VDD

VDD

AM01472v1

8/12 Doc ID 14089 Rev 6

0

0

10%

tdon

ton

90%

tr

10%

V

GS

VDS

tdoff

90%

AM01471v1

toff

tf

90%

10%

AM01473v1

STV270N4F3 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.

Doc ID 14089 Rev 6 9/12

Package mechanical data STV270N4F3

0068039-C

PowerSO-10 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TY P. MAX.

mm inch

A 3.35 3.65 0.132 0.144

A1 0.00 0.10 0.000 0.004

B 0.40 0.60 0.016 0.024

C 0.35 0.55 0.013 0.022

D 9.40 9.60 0.370 0.378

D1 7.40 7.60 0.291 0.300

e 1.27 0.050

E 9.30 9.50 0.366 0.374

E1 7.20 7.40 0.283 0.291

E2 7.20 7.60 0.283 0.300

E3 6.10 6.35 0.240 0.250

E4 5.90 6.10 0.232 0.240

F 1.25 1.35 0.049 0.053

h 0.50 0.002

H 13.80 14.40 0.543 0.567

L 1.20 1.80 0.047 0.071

q 1.70 0.067

α 0

= =

HE

A

F

A1

o

= =

h

o

8

B

B

A

Q

0.10

E1E3

= =

SEATING

PLANE

A

C

E4

= =

SEATING
PLANE

A1

= =

610

E2

= =

51

DETAIL "A"

B

e

M

0.25

D

= =

D1

= =

DETAIL "A"

10/12 Doc ID 14089 Rev 6

L

α

STV270N4F3 Revision history

5 Revision history

Table 8. Document revision history

Date Revision Changes

25-Oct-2007 1 Initial release

03-Apr-2008 2 ID value has been updated.

01-Oct-2008 3 Document status promoted from preliminary data to datasheet

09-Mar-2009 4 R

05-May-2009 5

Changed: Description and Figure 12: Source-drain diode forward

characteristics

17-Jun-2009 6 Corrected typing error on cover page

value has been changed in Table 3: Thermal data.

thj-pcb

Doc ID 14089 Rev 6 11/12

STV270N4F3

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12/12 Doc ID 14089 Rev 6