Page 1
N-channel 55 V, 1.5 mΩ, 250 A, PowerSO-10
Features
R
Type V
STV250N55F3 55 V < 2.2 mΩ 250 A
■ Conduction losses reduced
■ Low profile, very low parasitic inductance
DSS
Application
■ Switching applications
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics unique “single feature size”
strip-based process with less critical alignment
steps and therefore a remarkable manufacturing
reproducibility. The resulting transistor shows
extremely high packing density for low onresistance, rugged avalanche characteristics and
low gate charge.
DS(on)
max
I
D
STV250N55F3
STripFET™ Power MOSFET
10
1
PowerSO-10
Figure 1. Internal schematic diagram and
connection diagram (top view)
Table 1. Device summary
Order code Marking Package Packaging
STV250N55F3 250N55F3 PowerSO-10 Tape and reel
March 2009 Rev 4 1/12
www.st.com
12
Page 2
Contents STV250N55F3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
Page 3
STV250N55F3 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
P
V
V
I
DM
TOT
Drain-source voltage (VGS = 0) 55 V
DS
Gate-source voltage ± 20 V
GS
Drain current (continuous) at TC = 25 °C 250 A
I
D
I
Drain current (continuous) at TC = 100 °C 175 A
D
(1)
Drain current (pulsed) 1000 A
(2)
Total dissipation at TC = 25 °C 300 W
Derating factor 2.0 W/°C
(3)
EAS
T
1. Pulse width limited by safe operating area
2. This value is rated according to Rthj-c
3. Starting Tj = 25 °C, ID = 60 A, VDD = 35 V
Single pulse avalanche energy 1 J
Storage temperature
stg
Operating junction temperature
T
j
-55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max. 0.5 °C/W
Rthj-pcb
1. When mounted on 1 inch2 FR-4 2 oz Cu
(1)
Thermal resistance junction-pcb max. 50 °C/W
3/12
Page 4
Electrical characteristics STV250N55F3
2 Electrical characteristics
(T
= 25 °C unless otherwise specified)
case
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
breakdown voltage
Zero gate voltage
drain current (VGS = 0)
Gate body leakage
current (V
DS
= 0)
Gate threshold voltage V
Static drain-source on
resistance
= 250 µA, V
I
D
= Max rating,
V
DS
= Max rating, Tc = 125 °C
V
DS
= ± 20 V ±100 nA
V
DS
= VGS, ID = 250 µA 2 4 V
DS
= 10 V, ID = 75 A 1.5 2.2 mΩ
V
GS
= 0 55 V
GS
1
10µAµA
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
C
C
Q
Q
Q
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
g
Total gate charge
Gate-source charge
gs
Gate-drain charge
gd
= 25 V, f = 1 MHz, VGS = 0
V
DS
V
= 44 V, ID = 120 A,
DD
V
= 10 V
GS
Figure 14
6800
1450
15
100
30
26
pF
pF
pF
nC
nC
nC
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Page 5
STV250N55F3 Electrical characteristics
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max Unit
t
d(on)
t
t
d(off)
t
Turn-on delay time
Rise time
r
Turn-off delay time
Fall time
f
VDD = 27.5 V, ID = 60 A
= 4.7 Ω, V
R
G
GS
= 10 V,
Figure 13
VDD = 27.5 V, ID = 60 A
RG = 4.7 Ω, V
GS
= 10 V,
Figure 13
25
150
110
50
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
I
SD
V
SD
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Source-drain current
SD
(1)
Source-drain current (pulsed)
(2)
Forward on voltage ISD = 120 A, VGS = 0 1.5 V
Reverse recovery time
t
rr
Reverse recovery charge
rr
Reverse recovery current
ISD = 120 A, di/dt = 100 A/µs
V
DD
Figure 18
= 35 V, Tj = 150 °C
250
1000AA
60
110
3.5
ns
ns
ns
ns
ns
nC
A
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Page 6
Electrical characteristics STV250N55F3
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
I
D
(A)
DS(on)
100
Operation in this area is
Limited by max R
10
AM03164v1
100µs
1ms
10
K
δ=0.5
0.2
0.1
-1
0.05
0.02
0.1
10ms
0.1
Tj=175°C
Tc=25°C
Sinlge
pulse
-2
10
1
10
V
DS
(V)
10
-5
1
0.01
Single pulse
-4
10
10
-3
Zth=k Rthj-c
δ=tp/τ
tp
τ
-2
10
10
-1
Figure 4. Output characteristics Figure 5. Transfer characteristics
ID
(A)
V
GS=10V
400
350
7V
300
250
200
150
100
50
0
0
2
4
6
6V
5V
AM03165v1
V
DS(V)
(A)
400
350
300
250
200
150
100
ID
50
VDS=5V
0
0
1
3
2
67
5
4
280tok
8 9
(s)
t
p
AM03166v1
V
GS(V)
Figure 6. Normalized B
vs temperature Figure 7. Static drain-source on resistance
VDSS
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RDS(on)
(Ω)
3.0
2.5
2.0
1.5
1.0
0.5
AM03167v1
VGS=10V
100
0
200
300
400
I
D(A)
Page 7
STV250N55F3 Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 12. Source-drain diode forward
characteristics
Figure 11. Normalized on resistance vs
temperature
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Page 8
Test circuits STV250N55F3
3 Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 14. Gate charge test circuit
Figure 16. Unclamped inductive load test
circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
8/12
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STV250N55F3 Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
®
packages, depending on their level of environmental compliance. ECOPACK®
9/12
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Package mechanical data STV250N55F3
PowerSO-10 mechanical data
Dim
mm
Min Typ Max
A 3.70
A1 0.00 0.10
A2 3.40 3.60
A3 1.25 1.35
b 0.40 0.53
c0.350.55
D 9.40 9.60
D1 7.40 7.60
E13.80 14.40
E1 9.30 9.50
E2 7.20 7.60
E3 5.906.10
e1.27
L0.951.65
<0
o
8
o
0068039_E
10/12
Page 11
STV250N55F3 Revision history
5 Revision history
Table 8. Document revision history
Date Revision Changes
25-Oct-2007 1 Initial release
20-Mar-2008 2 Content reworked to improve readability, no technical changes.
10-Nov-2008 3 Document status promoted from preliminary data to datasheet.
02-Mar-2009 4 Figure 2 has been updated.
11/12
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STV250N55F3
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