Datasheet stv200n55f3 Datasheet

N-channel 55 V, 1.8 mΩ, 200 A, PowerSO-10

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Features

R

Type V

STV200N55F3 55 V < 2.5 mΩ 200 A

1. Current limited by package

■ Conduction losses reduced

■ Low profile, very low parasitic inductance

DSS

Application

DS(on)

max

STV200N55F3

STripFET™ Power MOSFET

(1)

I

D

10

1

PowerSO-10

■ Switching applications

Description

This n-channel enhancement mode Power
MOSFET is the latest refinement of ST’s
STripFET™ process. The resulting transistor
shows extremely high packing density for low on
resistance, rugged avalanche characteristics and
low gate charge.

Table 1. Device summary

Figure 1. Internal schematic diagram and

connection diagram (top view)

Order code Marking Package Packaging

STV200N55F3 200N55F3 PowerSO-10 Tape and reel

March 2009 Rev 3 1/12

www.st.com

12

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Contents STV200N55F3

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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STV200N55F3 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

V

I

D

I

DM

P

TOT

EAS

T

1. Current limited by package

2. Pulse width limited by safe operating area

3. This value is rated according to Rthj-c

4. Starting Tj = 25 °C, ID = 60 A, VDD = 35 V

Drain-source voltage (vgs = 0) 55 V

DS

Gate-source voltage ± 20 V

GS

(1)

Drain current (continuous) at TC = 25 °C 200 A

I

Drain current (continuous) at TC = 100 °C 170 A

D

(2)

Drain current (pulsed) 800 A

(3)

Total dissipation at TC = 25 °C 300 W

Derating factor 2.0 W/°C

(4)

Single pulse avalanche energy 1.0 J

Storage temperature

stg

Operating junction temperature

T

j

-55 to 175 °C

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 0.5 °C/W

(1)

Rthj-pcb

Thermal resistance junction-pcb max 50 °C/W

1. When mounted on 1 inch2 FR-4 2 oz Cu

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Electrical characteristics STV200N55F3

2 Electrical characteristics

(T

= 25 °C unless otherwise specified)

case

Table 4. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source
breakdown voltage

Zero gate voltage
drain current (VGS = 0)

Gate body leakage
current (V

DS

= 0)

Gate threshold voltage V

Static drain-source on
resistance

= 250 µA, VGS= 0 55 V

I

D

= Max rating,

V

DS

= Max rating, Tc = 125 °C

V

DS

= ± 20 V ±100 nA

V

DS

= VGS, ID = 250 µA 2 4 V

DS

= 10 V, ID = 75 A 1.8 2.5 mΩ

V

GS

1

10µAµA

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

C
C
C

Q
Q
Q

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

= 25 V, f = 1 MHz, VGS =0

V

DS

= 44 V, ID = 120 A,

V

DD

= 10 V

V

GS

Figure 14

6800
1450

15

100

30
26

pF
pF
pF

nC
nC
nC

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STV200N55F3 Electrical characteristics

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

t

d(off)

t

Turn-on delay time
Rise time

r

Turn-off delay time
Fall time

f

VDD = 27.5 V, ID = 60 A

= 4.7 Ω, VGS = 10 V,

R

G

Figure 13

VDD = 27.5 V, ID = 60 A
RG= 4.7 Ω, VGS= 10 V,

Figure 13

25

150

110

50

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

I

SD

V

SD

Q

I

RRM

1. Pulse width limited by safe operating area

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Source-drain current

SD

(1)

Source-drain current (pulsed)

(2)

Forward on voltage ISD = 120 A, VGS = 0 1.5 V

Reverse recovery time

t

rr

Reverse recovery charge

rr

Reverse recovery current

ISD = 120 A,di/dt = 100 A/µs
V

DD

Figure 18

= 35 V, Tj = 150 °C

200
800AA

60

110

3.5

ns
ns

ns
ns

ns

nC

A

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Electrical characteristics STV200N55F3

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

I

D

(A)

DS(on)

100

Operation in this area is

Limited by max R

10

AM03160v1

100µs

1ms

10

K

δ=0.5

0.2

0.1

-1

0.05

0.02

0.1

10ms

1

0.1

Tj=175°C

Tc=25°C

Sinlge
pulse

1

10

-2

10

V

DS

(V)

10

-5

0.01

Single pulse

-4

10

10

-3

Zth=k Rthj-c

δ=tp/τ

tp

τ

-2

10

10

-1

Figure 4. Output characteristics Figure 5. Transfer characteristics

ID

(A)

V

GS=10V

400

350

7V

6V

300

250

200

150

100

5V

50

0

0

2

4

6

8

AM03161v1

V

DS(V)

(A)

400

350

300

250

200

150

100

ID

50

VDS=6V

0

1

3

2

4

5

67

280tok

8 9

(s)

t

p

AM00889v1

V

GS(V)

Figure 6. Normalized B

vs temperature Figure 7. Static drain-source on resistance

VDSS

RDS(on)

(Ω)

VGS=10V

AM03163v1

2.5

2.0

1.5

1.0

6/12

0.5
100

0

200

300

400

I

D(A)

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STV200N55F3 Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage

vs temperature

Figure 12. Source-drain diode forward

characteristics

Figure 11. Normalized on resistance vs

temperature

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Test circuits STV200N55F3

3 Test circuits

Figure 13. Switching times test circuit for

Figure 15. Test circuit for inductive load

resistive load

switching and diode recovery times

Figure 14. Gate charge test circuit

Figure 16. Unclamped inductive load test

circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

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STV200N55F3 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.

®

packages, depending on their level of environmental compliance. ECOPACK®

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Package mechanical data STV200N55F3

PowerSO-10 mechanical data

Dim

mm

Min Typ Max

A 3.70

A1 0.00 0.10
A2 3.40 3.60
A3 1.25 1.35

b 0.40 0.53
c0.350.55
D 9.40 9.60

D1 7.40 7.60

E13.80 14.40
E1 9.30 9.50
E2 7.20 7.60
E3 5.906.10

e1.27

L0.951.65

<0

o

8

o

0068039_E

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STV200N55F3 Revision history

5 Revision history

Table 8. Document revision history

Date Revision Changes

05-Mar-2008 1 First release.

10-Nov-2008 2 Document status promoted from preliminary to datasheet.

02-Mar-2009 3 Figure 2 has been updated.

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STV200N55F3

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