Datasheet STTH812 Datasheet (ST) [en, no]

Page 1

STTH812

Ultrafast recovery - 1200 V diode

Main product characteristics
I
F(AV)
V
RRM
T
j
(typ) 1.25 V
V
F
(typ) 50 ns
t
rr
8 A
1200 V
175° C
Features and benefits
■ Ultrafast, soft recovery
■ Very low conduction and switching losses
operation
■ High reverse voltage capability
■ High junction temperature
■ Insulated packages:
– TO-220Ins
Electrical insulation = 2500 V Capacitance = 7 pF
– TO-220FPAC
Electrical insulation = 2000 V Capacitance = 12 pF
RMS
RMS
A
K
TO-220AC
STTH812D
K
A
NC
2
D
PAK
STTH812G
Order codes
Part Number Marking
KA
A
K
TO-220FPAC
STTH812FP
A
K
TO-220Ins
STTH812DI
Description
The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term
STTH812D STTH812D
STTH812G STTH812G
STTH812G-TR STTH812G
STTH812FP STTH812FP
STTH812DI STTH812DI
reliability.
Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications.
The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device.
March 2006 Rev 1 1/11
www.st.com
11
Page 2
Characteristics STTH812

1 Characteristics

Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage 1200 V
2
TO-220AC / D
PAK / TO-220FPAC 30
RMS forward current
TO-220AC Ins 20
2
TO-220AC / D
Average forward current, δ = 0.5
PA K Tc = 140° C
= 75° C
c
8ATO-220FPAC T
TO-220AC Ins Tc = 115° C
I
FRM
I
FSM
T

Table 2. Thermal parameters

Repetitive peak forward current tp = 5 µs, F = 5 kHz square 100 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 80 A
Storage temperature range -65 to + 175 °C
stg
T
Maximum operating junction temperature 175 °C
j
Symbol Parameter Value Unit
2
PA K 1 . 9
R
th(j-c)
TO-220AC / D
Junction to case
TO-220AC Ins 3.1
A
°C/WTO-220FPAC 5.4

Table 3. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ Max. Unit
(1)
I
R
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Reverse leakage current
(2)
Forward voltage drop
F
= 380 µs, δ < 2 %
p
= 25° C
j
= 125° C 5 50
T
j
= 25° C
T
j
T
= 150° C 1.25 1.9
j
V
R
I
= 8 A
F
= V
RRM
8
2.2
T
To evaluate the conduction losses use the following equation: P = 1.5 x I
F(AV)
+ 0.05 I
F2(RMS)
µA
VTj = 125° C 1.30 2.0
2/11
Page 3
STTH812 Characteristics

Table 4. Dynamic characteristics

Symbol Parameter
t
Reverse recovery time
rr
I
Reverse recovery current
RM
S Softness factor
Forward recovery time
t
fr
V
Forward recovery voltage
FP
Figure 1. Conduction losses versus
average current
P(W)
20
18
16
14
12
10
8
6
4
2
0
012345678 910
δ = 0.05
δ = 0.1
I (A)
F(AV)
δ = 0.2
δ = 0.5
δ
=tp/T
Figure 3. Relative variation of thermal
impedance junction to case versus pulse duration
Z/R
th(j-c) th(j-c)
1.0
Single pulse TO-220AC
0.9
2
DPAK TO-220Ins
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
t (s)
p
Test conditions
IF = 1 A, dIF/dt = -50 A/µs, V
= 30 V, Tj = 25° C
R
= 1 A, dIF/dt = -100 A/µs,
I
F
= 30 V, Tj = 25° C
V
R
= 8 A, dIF/dt = -200 A/µs,
I
F
= 600 V, Tj = 125° C
V
R
= 8 A, dIF/dt = -200 A/µs,
I
F
V
= 600 V, Tj = 125° C
R
= 8 A dIF/dt = 50 A/µs
I
F
= 1.5 x V
V
FR
I
= 8 A, dIF/dt = 50 A/µs,
F
T
= 25° C
j
, Tj = 25° C
Fmax
Figure 2. Forward voltage drop versus
I (A)
FM
80
70
δ = 1
T
tp
60
50
40
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 4. Relative variation of thermal
Z/R
th(j-c) th(j-c)
1.0
Single pulse TO-220FPAC
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Min. Typ Max. Unit
100
ns
50 70
14 21 A
2
400 ns
7V
forward current
T=150°C
j
(typical values)
T=25°C
j
T=150°C
j
(maximum values)
V (V)
FM
(maximum values)
impedance junction to case versus pulse duration
t (s)
p
3/11
Page 4
Characteristics STTH812
Figure 5. Peak reverse recovery current
versus dI
I (A)
RM
35
V =600V
R
T=125°C
j
30
25
I =0.5 x I
20
15
10
5
0
0 50 100 150 200 250 300 350 400 450 500
FF(AV)
/dt (typical values)
F
I =2 x I
FF(AV)
I=I
FF(AV)
dI /dt(A/µs)
F
Figure 7. Reverse recovery charges versus
dI
/dt (typical values)
F
Q (µC)
rr
3.0
V =600V
R
T=125°C
j
2.5
2.0
1.5
1.0
0.5
0.0
0 50 100 150 200 250 300 350 400 450 500
I =2 x I
FF(AV)
I=I
FF(AV)
I =0.5 x I
FF(AV)
dI /dt(A/µs)
F
Figure 9. Relative variations of dynamic
parameters versus junction temperature
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25 50 75 100 125
S factor
t
I
RM
Q
rr
RR
T (°C)
j
I=I
FF(AV)
V =600V
R
Reference:T =125°C
j
Figure 6. Reverse recovery time versus dI
(typical values)
t (ns)
rr
500
450
400
350
300
250
200
150
100
50
0
0 50 100 150 200 250 300 350 400 450 500
I =2 x I
FF(AV)
I=I
FF(AV)
dI /dt(A/µs)
F
I =0.5 x I
FF(AV)
Figure 8. Softness factor versus dI
F
V =600V T=125°C
/dt
R
j
(typical values)
S factor
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0 50 100 150 200 250 300 350 400 450 500
dI /dt(A/µs)
F
I 2xI
≤
FF(AV)
V =600V
R
T=125°C
j
Figure 10. Transient peak forward voltage
versus dI
V (V)
FP
45
I=I
FF(AV)
T=125°C
j
40
35
30
25
20
15
10
5
0
0 100 200 300 400 500
/dt (typical values)
F
dI /dt(A/µs)
F
F
/dt
4/11
Page 5
STTH812 Characteristics
Figure 11. Forward recovery time versus dIF/dt
(typical values)
t (ns)
fr
700
600
500
400
300
dI /dt(A/µs)
200
0 100 200 300 400 500
F
I=I
FF(AV)
V =1.5 x V max.
FR F
T=125°C
j
Figure 13. Thermal resistance junction to
ambient versus copper surface under tab (Epoxy printed circuit board FR4, e
R (°C/W)
th(j-a)
80
70
60
50
40
30
20
10
0
0 5 10 15 20 25 30 35 40
cu
S (cm²)
CU
= 35 µm)
Figure 12. Junction capacitance versus
reverse voltage applied (typical values)
C(pF)
1000
100
10
V (V)
1
1 10 100 1000
R
F=1MHz
V =30mV
OSC RMS
T=25°C
j
5/11
Page 6
Package mechanical data STTH812

2 Package mechanical data

Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.55 Nm (TO-220AC)
Maximum torque value: 0.7 Nm (TO-220AC)

Table 5. T0-220AC dimensions

DIMENSIONS
L2
F1
REF.
Millimeters Inches
Min. Max. Min. Max.
H2
Ø I
A
C
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
L5
L6
L7
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
L9
L4
F
G
D
H2 10.00 10.40 0.393 0.409
L2 16.40 typ. 0.645 typ.
L4 13.00 14.00 0.511 0.551
M
E
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. I 3.75 3.85 0.147 0.151
6/11
Page 7
STTH812 Package mechanical data

Table 6. T0-220Ins dimensions

DIMENSIONS
REF
Millimeters Inches
Min. Max. Min. Max.
A 15.20 15.90 0.598 0.625
B
Ø I
L
A
I4
a1
l2
a2
C
b2
c2
a1 3.75 0.147
a2 13.00 14.00 0.511 0.551
B 10.00 10.40 0.393 0.409
F
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107
b1
e
M
e 4.80 5.40 0.189 0.212
c1
F 6.20 6.60 0.244 0.259
ØI 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
M2.60 0.102
7/11
Page 8
Package mechanical data STTH812

Table 7. T0-220FPAC dimensions

DIMENSIONS
REF
Millimeters Inches
Min. Max. Min. Max.
A
H
L6
L2
L3
L5
F1
L4
F
G1
G
B
Dia
L7
D
E
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ.
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417
L5 2.9 3.6 0.114 0.142
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
8/11
Page 9
STTH812 Package mechanical data
m
D
Table 8. D
L2
L
L3
2
PAK dimensions
E
A1
B2
B
G
* FLAT ZONE NO LESS THAN 2m
DIMENSIONS
REF.
Millimeters Inches
Min. Max Min. Max.
A
C2
C
M
R
A2
*
V2
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024
C2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ.
V2 0° 8° 0° 8°

Figure 14. D2PAK footprint (dimensions in mm)

16.90
10.30
8.90
3.70
5.08
1.30
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
9/11
Page 10
Ordering information STTH812

3 Ordering information

Part Number Marking Package Weight Base qty Delivery mode
STTH812D STTH812D TO-220AC 1.86 g 50 Tube
STTH812DI STTH812DI TO-220Ins 1.86 g 50 Tube
STTH812FP STTH812FP TO-220FPAC 2.2 g 50 Tube
STTH812G STTH812G D
STTH812G-TR STTH812G D
2
PAK 1.48 g 50 Tube
2
PAK 1.48 g 1000 Tape & reel

4 Revision history

Date Revision Description of Changes
02-Mar-2006 1 First issue.
10/11
Page 11
STTH812
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
time, without notice.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS,
NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE.
liability of ST.
© 2006 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
11/11
Loading...