Electrical insulation = 2000 V
Capacitance = 12 pF
RMS
RMS
A
K
TO-220AC
STTH812D
K
A
NC
2
D
PAK
STTH812G
Order codes
Part NumberMarking
KA
A
K
TO-220FPAC
STTH812FP
A
K
TO-220Ins
STTH812DI
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
STTH812DSTTH812D
STTH812GSTTH812G
STTH812G-TRSTTH812G
STTH812FPSTTH812FP
STTH812DISTTH812DI
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage current,
and therefore thermal runaway guard band, is an
immediate competitive advantage for this device.
Surge non repetitive forward current tp = 10 ms Sinusoidal80A
Storage temperature range-65 to + 175°C
stg
T
Maximum operating junction temperature175°C
j
SymbolParameterValueUnit
2
PA K1 . 9
R
th(j-c)
TO-220AC / D
Junction to case
TO-220AC Ins3.1
A
°C/WTO-220FPAC5.4
Table 3.Static electrical characteristics
SymbolParameterTest conditionsMin.TypMax.Unit
(1)
I
R
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Reverse leakage current
(2)
Forward voltage drop
F
= 380 µs, δ < 2 %
p
= 25° C
j
= 125° C550
T
j
= 25° C
T
j
T
= 150° C1.251.9
j
V
R
I
= 8 A
F
= V
RRM
8
2.2
T
To evaluate the conduction losses use the following equation:
P = 1.5 x I
F(AV)
+ 0.05 I
F2(RMS)
µA
VTj = 125° C1.302.0
2/11
Page 3
STTH812Characteristics
Table 4.Dynamic characteristics
SymbolParameter
t
Reverse recovery time
rr
I
Reverse recovery current
RM
SSoftness factor
Forward recovery time
t
fr
V
Forward recovery voltage
FP
Figure 1.Conduction losses versus
average current
P(W)
20
18
16
14
12
10
8
6
4
2
0
012345678 910
δ = 0.05
δ = 0.1
I(A)
F(AV)
δ = 0.2
δ = 0.5
δ
=tp/T
Figure 3.Relative variation of thermal
impedance junction to case
versus pulse duration
Z/R
th(j-c) th(j-c)
1.0
Single pulse
TO-220AC
0.9
2
DPAK
TO-220Ins
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-031.E-021.E-011.E+00
t (s)
p
Test conditions
IF = 1 A, dIF/dt = -50 A/µs,
V
= 30 V, Tj = 25° C
R
= 1 A, dIF/dt = -100 A/µs,
I
F
= 30 V, Tj = 25° C
V
R
= 8 A, dIF/dt = -200 A/µs,
I
F
= 600 V, Tj = 125° C
V
R
= 8 A, dIF/dt = -200 A/µs,
I
F
V
= 600 V, Tj = 125° C
R
= 8 A dIF/dt = 50 A/µs
I
F
= 1.5 x V
V
FR
I
= 8 A, dIF/dt = 50 A/µs,
F
T
= 25° C
j
, Tj = 25° C
Fmax
Figure 2.Forward voltage drop versus
I (A)
FM
80
70
δ = 1
T
tp
60
50
40
30
20
10
0
0.00.51.01.52.02.53.03.54.04.55.0
Figure 4.Relative variation of thermal
Z/R
th(j-c) th(j-c)
1.0
Single pulse
TO-220FPAC
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-031.E-021.E-011.E+001.E+01
Min.TypMax.Unit
100
ns
5070
1421A
2
400ns
7V
forward current
T=150°C
j
(typical values)
T=25°C
j
T=150°C
j
(maximum values)
V (V)
FM
(maximum values)
impedance junction to case versus
pulse duration
t (s)
p
3/11
Page 4
CharacteristicsSTTH812
Figure 5.Peak reverse recovery current
versus dI
I (A)
RM
35
V =600V
R
T=125°C
j
30
25
I =0.5 x I
20
15
10
5
0
050100150200250300350400450500
FF(AV)
/dt (typical values)
F
I =2 x I
FF(AV)
I=I
FF(AV)
dI /dt(A/µs)
F
Figure 7.Reverse recovery charges versus
dI
/dt (typical values)
F
Q (µC)
rr
3.0
V =600V
R
T=125°C
j
2.5
2.0
1.5
1.0
0.5
0.0
050100150200250300350400450500
I =2 x I
FF(AV)
I=I
FF(AV)
I =0.5 x I
FF(AV)
dI /dt(A/µs)
F
Figure 9.Relative variations of dynamic
parameters versus junction
temperature
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
255075100125
S factor
t
I
RM
Q
rr
RR
T (°C)
j
I=I
FF(AV)
V =600V
R
Reference:T =125°C
j
Figure 6.Reverse recovery time versus dI
(typical values)
t (ns)
rr
500
450
400
350
300
250
200
150
100
50
0
050100150200250300350400450500
I =2 x I
FF(AV)
I=I
FF(AV)
dI /dt(A/µs)
F
I =0.5 x I
FF(AV)
Figure 8.Softness factor versus dI
F
V =600V
T=125°C
/dt
R
j
(typical values)
S factor
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
050100150200250300350400450500
dI /dt(A/µs)
F
I 2xI
≤
FF(AV)
V =600V
R
T=125°C
j
Figure 10. Transient peak forward voltage
versus dI
V (V)
FP
45
I=I
FF(AV)
T=125°C
j
40
35
30
25
20
15
10
5
0
0100200300400500
/dt (typical values)
F
dI /dt(A/µs)
F
F
/dt
4/11
Page 5
STTH812Characteristics
Figure 11. Forward recovery time versus dIF/dt
(typical values)
t (ns)
fr
700
600
500
400
300
dI /dt(A/µs)
200
0100200300400500
F
I=I
FF(AV)
V =1.5 x V max.
FRF
T=125°C
j
Figure 13. Thermal resistance junction to
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, e
R(°C/W)
th(j-a)
80
70
60
50
40
30
20
10
0
0510152025303540
cu
S (cm²)
CU
= 35 µm)
Figure 12. Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
1000
100
10
V (V)
1
1101001000
R
F=1MHz
V =30mV
OSCRMS
T=25°C
j
5/11
Page 6
Package mechanical dataSTTH812
2 Package mechanical data
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.55 Nm (TO-220AC)
Maximum torque value: 0.7 Nm (TO-220AC)
Table 5.T0-220AC dimensions
DIMENSIONS
L2
F1
REF.
MillimetersInches
Min.Max.Min.Max.
H2
Ø I
A
C
A4.404.600.1730.181
C1.231.320.0480.051
D2.402.720.0940.107
L5
L6
L7
E0.490.700.0190.027
F0.610.880.0240.034
F11.141.700.0440.066
G4.955.150.1940.202
L9
L4
F
G
D
H210.0010.400.3930.409
L216.40 typ.0.645 typ.
L413.0014.000.5110.551
M
E
L52.652.950.1040.116
L615.2515.750.6000.620
L76.206.600.2440.259
L93.503.930.1370.154
M2.6 typ.0.102 typ.
Diam. I3.753.850.1470.151
6/11
Page 7
STTH812Package mechanical data
Table 6.T0-220Ins dimensions
DIMENSIONS
REF
MillimetersInches
Min.Max.Min.Max.
A15.2015.90 0.5980.625
B
Ø I
L
A
I4
a1
l2
a2
C
b2
c2
a13.750.147
a213.0014.00 0.5110.551
B10.0010.40 0.3930.409
F
b10.610.880.0240.034
b21.231.320.0480.051
C4.404.60 0.1730.181
c10.490.70 0.0190.027
c22.402.72 0.0940.107
b1
e
M
e4.805.40 0.1890.212
c1
F6.206.600.2440.259
ØI3.753.85 0.1470.151
I415.80 16.40 16.80 0.622 0.646 0.661
L2.652.95 0.1040.116
l21.141.700.0440.066
M2.600.102
7/11
Page 8
Package mechanical dataSTTH812
Table 7.T0-220FPAC dimensions
DIMENSIONS
REF
MillimetersInches
Min.Max.Min.Max.
A
H
L6
L2
L3
L5
F1
L4
F
G1
G
B
Dia
L7
D
E
A4.44.60.1730.181
B2.52.70.0980.106
D2.52.750.0980.108
E0.450.700.0180.027
F0.7510.0300.039
F11.151.700.0450.067
G4.955.200.1950.205
G12.42.70.0940.106
H1010.40.3930.409
L216 Typ.0.63 Typ.
L328.630.61.1261.205
L49.810.60.3860.417
L52.93.60.1140.142
L615.916.40.6260.646
L79.009.300.3540.366
Dia.3.003.200.1180.126
8/11
Page 9
STTH812Package mechanical data
m
D
Table 8.D
L2
L
L3
2
PAK dimensions
E
A1
B2
B
G
* FLAT ZONE NO LESS THAN 2m
DIMENSIONS
REF.
MillimetersInches
Min.MaxMin.Max.
A
C2
C
M
R
A2
*
V2
A4.404.600.1730.181
A12.492.690.0980.106
A20.030.230.0010.009
B0.700.930.0270.037
B21.141.700.0450.067
C0.450.600.0170.024
C21.231.360.0480.054
D8.959.350.3520.368
E10.0010.400.3930.409
G4.885.280.1920.208
L15.0015.850.5900.624
L21.271.400.0500.055
L31.401.750.0550.069
M2.403.200.0940.126
R0.40 typ.0.016 typ.
V20°8°0°8°
Figure 14. D2PAK footprint (dimensions in mm)
16.90
10.30
8.90
3.70
5.08
1.30
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
9/11
Page 10
Ordering informationSTTH812
3 Ordering information
Part NumberMarkingPackageWeightBase qty Delivery mode
STTH812DSTTH812DTO-220AC1.86 g50Tube
STTH812DISTTH812DITO-220Ins1.86 g50Tube
STTH812FPSTTH812FPTO-220FPAC2.2 g50Tube
STTH812GSTTH812GD
STTH812G-TRSTTH812GD
2
PAK1.48 g50Tube
2
PAK1.48 g1000Tape & reel
4 Revision history
DateRevisionDescription of Changes
02-Mar-20061First issue.
10/11
Page 11
STTH812
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